公开(公告)号：US07123519B2

公开(公告)日：2006-10-17

申请号：US11085555

申请日：2005-03-22

申请人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

发明人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

IPC分类号： G11C11/34

CPC分类号： G11C29/765 ,  G06F3/0601 ,  G06F3/0616 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0659 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2003/0694 ,  G06F2212/2022 ,  G11C16/102 ,  G11C16/349

摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.

公开(公告)号：US07101591B2

公开(公告)日：2006-09-05

申请号：US10250329

申请日：2002-07-01

申请人： Yoshihiro Hayashi ,  Jun Kawahara

发明人： Yoshihiro Hayashi ,  Jun Kawahara

IPC分类号： B05D3/02 ,  C23C4/04

CPC分类号： H01L21/76835 ,  C08G61/12 ,  C09D4/00 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/312 ,  H01L21/3122 ,  H01L21/76829 ,  Y10S428/901 ,  Y10S428/938 ,  Y10T428/31663 ,  C08G77/00

摘要： This invention provides a process for producing an organic polymer film whereby when using it as an interlayer insulating film in a semiconductor device, the film exhibits higher adhesiveness at its interfaces where other semiconductor materials are in contact with the lower and the upper surface of the film while an effective dielectric constant in the whole organic polymer film can be further reduced. Specifically, a plurality of organic monomers vaporized is sprayed onto a heated substrate surface via plasma generated in a reaction chamber to form a copolymer film comprising frame composed of a plurality of organic monomer units. During the process, relative ratio between the feeding rate of the organic monomer molecules is varied along the progress of the film growth to continuously grow an interlayer insulating film in which films having good mechanical strength and adhesiveness with rich content of siloxane-structure are set near the interfaces (91a,c, 92a,c or 93a,c) and a film having a lower bulk density are arranged as an intermediate layer (91b, 92b or 93b) sandwiched therebetween.

摘要翻译： 本发明提供一种制造有机聚合物膜的方法，其中当在半导体器件中使用它作为层间绝缘膜时，该膜在其界面处表现出较高的粘附性，其中其它半导体材料与膜的下表面和上表面接触 同时可以进一步降低整个有机聚合物膜中的有效介电常数。 具体地说，蒸发的多个有机单体通过在反应室中产生的等离子体喷射到加热的基板表面上，形成由多个有机单体单元组成的框架的共聚物膜。 在该过程中，有机单体分子的进料速率之间的相对比例随着膜生长的进行而变化，以连续生长其中具有机械强度和密合性好的硅树脂结构的含量较高的膜的层间绝缘膜 界面（91a，c，92a，c或93a，c）和具有较低堆积密度的膜被布置为夹在其间的中间层（91b，92b或93b）。

公开(公告)号：US07082510B2

公开(公告)日：2006-07-25

申请号：US11085544

申请日：2005-03-22

申请人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

发明人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

IPC分类号： G06F12/02

CPC分类号： G11C29/765 ,  G06F3/0601 ,  G06F3/0616 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0659 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2003/0694 ,  G06F2212/2022 ,  G11C16/102 ,  G11C16/349

摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.

公开(公告)号：US20060074145A1

公开(公告)日：2006-04-06

申请号：US11242931

申请日：2005-10-05

申请人： Hiroshi Hayashi ,  Yoshihiro Hayashi ,  Yoshifumi Watanabe

发明人： Hiroshi Hayashi ,  Yoshihiro Hayashi ,  Yoshifumi Watanabe

IPC分类号： C03C17/00 ,  C09D11/00

CPC分类号： C09D11/0235

摘要： A water-based ink for stencil printing, wherein the slope (S) of a graph generated by plotting spread meter values measured at 25° C. [x axis: natural logarithm of the time elapsed T (seconds), y axis: spread diameter D (mm)] is within a range from 1.0 to 4.5; a water-based ink for stencil printing that includes a water-soluble polymer thickener with a cross-linked structure, and a water-soluble polymer thickener with a straight-chain structure; and stencil printing methods that use these inks.

摘要翻译： 用于模版印刷的水性油墨，其中通过绘制在25℃下测量的传播仪表值产生的曲线图的斜率（S）。[x轴：经过时间T（秒）的自然对数，y轴：展开直径 D（mm）]在1.0〜4.5的范围内; 包含具有交联结构的水溶性聚合物增稠剂的模版印刷水性油墨和具有直链结构的水溶性聚合物增稠剂; 和使用这些油墨的模版印刷方法。

公开(公告)号：US06956018B2

公开(公告)日：2005-10-18

申请号：US10888992

申请日：2004-07-13

申请人： Akinori Itoh ,  Susumu Honda ,  Tatsuya Matsui ,  Yoshihiro Hayashi

发明人： Akinori Itoh ,  Susumu Honda ,  Tatsuya Matsui ,  Yoshihiro Hayashi

IPC分类号： C08F283/06 ,  C08G65/26 ,  C08L71/02 ,  C11D1/72 ,  C07C43/15 ,  C08J3/02 ,  C11D3/37

CPC分类号： C08G65/2609 ,  C08F283/06 ,  C08F283/065 ,  C08L71/02 ,  C08L2666/04

摘要： A polymerizable polyoxyalkylene monoalkyl ether derivative prepared by using a polyoxyalklene monoalkyl ether which gives, in gel permeation chromatography, a chromatogram which satisfies a relation expressed by an equation: S1/S0≦0.15, wherein S1 represents the area under a portion of the chromatogram from the start of elution to the earliest elution time when the intensity of the refractive index has a value of L/3, L representing the shortest distance between the greatest maximum point of the intensity of the refractive index and the base line and S0 represents the area under a portion of the chromatogram from the start of elution to an elution time when the intensity of the refractive index has the greatest maximum value; a process for producing the above ether comprising adjusting the content of water in a reactor, which is used in addition polymerization of alkylene oxides with addition to a monohydric alcohol, so as to satisfy an equation: Wi×(Cf−Ci)/V≦10, wherein the content of water in the reactor is obtained by placing a solvent having a content of water Ci (ppm) in an amount Wi (g) in the reactor having an inner volume V (ml), stirring the solvent to clean the reactor, removing the solvent from the reactor and obtaining a content of water Cf (ppm) in the removed solvent.

摘要翻译： 通过使用聚氧化烯单烷基醚制备的可聚合的聚氧化烯单烷基醚衍生物，所述聚氧化烯单烷基醚在凝胶渗透色谱法中得到满足由下列公式表示的关系的色谱图：S＆lt; 1＆lt; > <= 0.15，其中S 1表示当折射率的强度为L / 3时的从洗脱开始到最早洗脱时间的色谱图的一部分的面积，L 代表折射率强度的最大最大点与基线之间的最短距离，S O表示从洗脱开始到洗脱时间的部分色谱图下的面积 折射率的强度具有最大的最大值; 一种制备上述醚的方法，包括调节反应器中的水含量，该反应器用于加成环氧烷与一元醇的加成聚合，以满足下式：Wix（Cf-Ci）/ V <= 10，其中反应器中的水含量是通过将具有内容积V（ml）的反应器中具有含量为Wi（g）的水分量（ppm）的溶剂置于内部体积V（ml）中，搅拌溶剂来清洗 反应器中，从反应器中除去溶剂，并在去除的溶剂中获得水含量Cf（ppm）。

公开(公告)号：US20050211115A1

公开(公告)日：2005-09-29

申请号：US11083318

申请日：2005-03-18

申请人： Akira Nakamura ,  Taku Naitou ,  Takuya Shibahara ,  Yoshihiro Hayashi

发明人： Akira Nakamura ,  Taku Naitou ,  Takuya Shibahara ,  Yoshihiro Hayashi

IPC分类号： B41L13/04 ,  B41L13/06 ,  B41L13/14 ,  B41L13/18 ,  B41M1/12 ,  B41N1/24 ,  C09D11/02 ,  C09D11/033 ,  C09D11/037

CPC分类号： B41M1/12 ,  B41L13/06 ,  B41L13/18 ,  B41N1/248 ,  C09D11/0235

摘要： There is disclosed a stencil printing method carried out by employing a stencil printing machine comprising: a drum which is rotatable and has a outer peripheral wall formed by an ink impermeable member and in which a stencil sheet is mounted on a surface of the outer peripheral wall; an ink supply device which has an ink supply unit provided on the outer peripheral wall of the drum and supplies ink on the surface of the outer peripheral wall from the ink supply unit; and a pressure roller which presses a fed print medium onto the outer peripheral wall; the method comprising: a step of mounting a stencil sheet on the drum; a step of plate-making the stencil sheet; and a step of transferring a water-based ink to a print medium by making the water-based ink pass through perforations of the stencil sheet.

摘要翻译： 公开了一种通过使用模版印刷机进行的模版印刷方法，该模版印刷机包括：滚筒，其可旋转并具有由不透油性部件形成的外周壁，并且其中将蜡纸安装在外周壁的表面上 ; 墨水供应装置，其具有设置在滚筒的外周壁上的供墨单元，并从墨供给单元向外周壁的表面供墨; 以及将进给的印刷介质压到外周壁上的加压辊; 该方法包括：将蜡纸安装在滚筒上的步骤; 制版蜡纸的一步; 以及通过使水性油墨通过蜡纸的穿孔将水性油墨转印到打印介质的步骤。

公开(公告)号：US20050166088A1

公开(公告)日：2005-07-28

申请号：US11085561

申请日：2005-03-22

申请人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

发明人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

IPC分类号： G06F3/06 ,  G06F12/02 ,  G11C16/10 ,  G11C29/00 ,  G06F12/16 ,  G06F12/08

CPC分类号： G11C29/765 ,  G06F3/0601 ,  G06F3/0616 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0659 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2003/0694 ,  G06F2212/2022 ,  G11C16/102 ,  G11C16/349

摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.

公开(公告)号：US20050162901A1

公开(公告)日：2005-07-28

申请号：US11085555

申请日：2005-03-22

申请人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

发明人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

IPC分类号： G06F3/06 ,  G06F12/02 ,  G11C16/10 ,  G11C29/00 ,  G11C11/00

CPC分类号： G11C29/765 ,  G06F3/0601 ,  G06F3/0616 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0659 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2003/0694 ,  G06F2212/2022 ,  G11C16/102 ,  G11C16/349

摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.

公开(公告)号：US20050162899A1

公开(公告)日：2005-07-28

申请号：US11085507

申请日：2005-03-22

申请人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

发明人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

IPC分类号： G06F3/06 ,  G06F12/02 ,  G11C16/10 ,  G11C29/00 ,  G11C11/00

CPC分类号： G11C29/765 ,  G06F3/0601 ,  G06F3/0616 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0659 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2003/0694 ,  G06F2212/2022 ,  G11C16/102 ,  G11C16/349

摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.

公开(公告)号：US06709991B1

公开(公告)日：2004-03-23

申请号：US09084578

申请日：1998-05-26

申请人： Jun Kawahara ,  Shinobu Saito ,  Yukihiko Maejima ,  Yoshihiro Hayashi

发明人： Jun Kawahara ,  Shinobu Saito ,  Yukihiko Maejima ,  Yoshihiro Hayashi

IPC分类号： H01L21469

CPC分类号： H01L28/57 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02216 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76802

摘要： A fabrication method of a semiconductor device with a capacitor is provided, which prevents leakage current from increasing and dielectric breakdown resistance from decreasing during a CVD or dry etching process for forming an insulating film to cover the capacitor. In this method, a lower electrode of a capacitor is formed on a first insulating film. The first insulating film is typically formed on or over a semiconductor substrate. A dielectric film of the capacitor is formed on the lower electrode to be overlapped therewith. An upper electrode of the capacitor is formed on the dielectric film to be overlapped therewith. A second insulating film is formed to cover the capacitor by a thermal CVD process in an atmosphere containing no plasma at a substrate temperature in which hydrogen is prevented from being activated due to heat. A source material of the second insulating film has a property that no hydrogen is generated in the atmosphere through decomposition of the source material during the thermal CVD process.

摘要翻译： 提供了具有电容器的半导体器件的制造方法，其防止了在用于形成绝缘膜以覆盖电容器的CVD或干蚀刻工艺期间泄漏电流增加和绝缘击穿电阻降低。 在该方法中，在第一绝缘膜上形成电容器的下电极。 第一绝缘膜通常形成在半导体衬底上或上方。 电容器的电介质膜形成在下电极上以与其重叠。 电容器的上电极形成在电介质膜上以与其重叠。 形成第二绝缘膜，通过热CVD法在不防止由于热而被活化的基板温度下的不含等离子体的气氛中覆盖电容器。 第二绝缘膜的源材料具有通过在热CVD工艺期间源材料分解而在大气中不产生氢的性质。