公开(公告)号：US07211805B2

公开(公告)日：2007-05-01

申请号：US11312367

申请日：2005-12-21

申请人： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

发明人： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

IPC分类号： H01J27/00 ,  G21G5/00 ,  G21K7/00

CPC分类号： H01J27/02 ,  H01J27/22 ,  H01J37/08 ,  H01J2237/0805

摘要： An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

摘要翻译： Ga液体金属离子源的发射极构成为包括基材的W12和覆盖表面的离子源元素的Ga9作为构造材料。 通过使反溅射的颗粒成为Ga液态金属离子源的元素（W和Ga），如果反溅射的颗粒附着到Ga液态金属离子源，则不会发生可能改变Ga9的物理特性的污染物。 使用W光圈作为光束限制（GUN）光圈来放置大约的Ga。 在束发射区域（Ga储存）中包含的部分的表面上25mg（熔点为30℃））。 当将离子发射到光束限制（GUN）孔径时，发射区域中的Ga在W光阑的束发射区域的表面上熔化并扩散。

公开(公告)号：US06794663B2

公开(公告)日：2004-09-21

申请号：US10699853

申请日：2003-11-04

申请人： Hiroyasu Shichi ,  Tohru Ishitani ,  Hidemi Koike ,  Kaoru Umemura ,  Eiichi Seya ,  Mitsuo Tokuda ,  Satoshi Tomimatsu ,  Hideo Kashima ,  Muneyuki Fukuda

发明人： Hiroyasu Shichi ,  Tohru Ishitani ,  Hidemi Koike ,  Kaoru Umemura ,  Eiichi Seya ,  Mitsuo Tokuda ,  Satoshi Tomimatsu ,  Hideo Kashima ,  Muneyuki Fukuda

IPC分类号： G21G500

CPC分类号： G01N23/20 ,  B23K15/0006 ,  B23K15/0013 ,  G01N1/286 ,  H01J2237/3114 ,  H01J2237/31745

摘要： A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.

公开(公告)号：US06734687B1

公开(公告)日：2004-05-11

申请号：US09936941

申请日：2001-12-04

申请人： Tohru Ishitani ,  Hidemi Koike ,  Aritoshi Sugimoto ,  Isamu Sekihara ,  Kaoru Umemura ,  Satoshi Tomimatsu ,  Junzo Azuma

发明人： Tohru Ishitani ,  Hidemi Koike ,  Aritoshi Sugimoto ,  Isamu Sekihara ,  Kaoru Umemura ,  Satoshi Tomimatsu ,  Junzo Azuma

IPC分类号： G01R31302

CPC分类号： G01R31/311 ,  G01R31/2851 ,  G01R31/303

摘要： Disconnection defects, short-circuit defects and the like in wiring patters of submicron sizes within TEGs (a square of 1 to 2.5 mm for each) numerously arranged in a large chip (a square of 20 to 25 mm) can be inspected with respect to all the TEGs, with good operability, high reliability and high efficiency. A conductor probe for applying voltage to the wiring patterns by mechanical contact is composed of synchronous type conductor probe that synchronizes with movement of a sample stage (16), and fixed type conductor probe means (21) that is relatively fixed to an FIB generator (10). Positions of probe tips are superimposed to an SIM image and displayed on a display unit (19).

摘要翻译： 可以检查大尺寸芯片（20〜25mm的正方形）内的TEG内的亚微米尺寸（每个为1〜2.5mm的正方形）的接线图案中的断路缺陷，短路缺陷等。 所有的TEG，具有良好的可操作性，高可靠性和高效率。 用于通过机械接触对布线图案施加电压的导体探针由与样品台（16）的移动同步的同步型导体探针和相对固定于FIB发生器的固定型导体探针装置（21）组成， 10）。 探针尖端的位置叠加到SIM图像上并显示在显示单元上（19）。

公开(公告)号：US4680507A

公开(公告)日：1987-07-14

申请号：US669796

申请日：1984-11-09

申请人： Kaoru Uemura ,  Tohru Ishitani ,  Hifumi Tamura

发明人： Kaoru Uemura ,  Tohru Ishitani ,  Hifumi Tamura

IPC分类号： H01J27/26 ,  H01J37/08 ,  H01J7/24

CPC分类号： H01J27/26 ,  H01J37/08

摘要： A liquid metal ion source has a reservoir which holds a source material to-be-ionized in a melted state; an emitter which emits from its tip, ions of the melted source material fed from the reservoir; and an extracting electrode which applies a high electric field to the tip of the emitter, thereby to extract the ions from the tip of the emitter. The liquid metal ion source further comprises tank means for storing the source material to be fed to the reservoir, transfer means for transferring the source material from the tank means to the reservoir, and a vacuum chamber for holding the constituents in a vacuum state.

摘要翻译： 液态金属离子源具有储存器，其将待熔化的源材料保持在原状态; 从其尖端发射的发射体，从储存器供给的熔融源材料的离子; 以及向发射极的顶端施加高电场的提取电极，从而从发射极的顶端取出离子。 液体金属离子源还包括储存装置，用于存储要供给到储存器的源材料，用于将源材料从罐装置传送到储存器的转印装置，以及用于将成分保持在真空状态的真空室。

公开(公告)号：US4479060A

公开(公告)日：1984-10-23

申请号：US454027

申请日：1982-12-28

申请人： Hifumi Tamura ,  Tohru Ishitani ,  Akira Shimase

发明人： Hifumi Tamura ,  Tohru Ishitani ,  Akira Shimase

IPC分类号： H01J37/073 ,  G01Q30/20 ,  H01J37/08 ,  H01J37/10 ,  H01J37/12 ,  H01J37/252 ,  H01J3/14 ,  G01N23/04 ,  G01N23/225

CPC分类号： H01J37/10 ,  H01J37/252

摘要： An apparatus according to the present invention for irradiating a specimen with charged particle beams comprises a single charged particle generating source from which the charged particle beams formed of electrons and negative ions, respectively, can be simultaneously derived; a specimen holder on which the specimen is placed; and charged particle irradiation means which is interposed between the charged particle generating source and the specimen holder in order to focus the charged particle beams and to irradiate the surface of the specimen with the focused beams, and which includes at least one magnetic lens and at least one electrostatic lens that are individually disposed.

摘要翻译： 根据本发明的用于用带电粒子束照射样本的装置包括单个带电粒子发生源，可以同时衍生由电子和负离子形成的带电粒子束; 放置样品的样品架; 以及带电粒子照射装置，其被插入在带电粒子发生源和样本保持器之间，以便聚焦带电粒子束并用聚焦束照射样本的表面，并且至少包括至少一个磁性透镜 一个静电透镜单独设置。

公开(公告)号：US4438371A

公开(公告)日：1984-03-20

申请号：US377417

申请日：1982-05-12

申请人： Shigeyuki Hosoki ,  Masaaki Futamoto ,  Ushio Kawabe ,  Tohru Ishitani ,  Hifumi Tamura

发明人： Shigeyuki Hosoki ,  Masaaki Futamoto ,  Ushio Kawabe ,  Tohru Ishitani ,  Hifumi Tamura

IPC分类号： H01J27/26 ,  H01J37/073 ,  H01J37/08 ,  H01J7/24

CPC分类号： H01J37/073 ,  H01J2237/0807

摘要： A source of charged particles beam which can be used either as an electron source or an ion source and has a tip formed of carbide, nitride or di-boride of at least one of elements Ti, Zr, Hf, V, Nb and Ta or formed of hexa-boride of at least one of rare earth metal elements of atomic number 57 to 70.

摘要翻译： 带电粒子束源，其可以用作电子源或离子源，并且具有由元素Ti，Zr，Hf，V，Nb和Ta中的至少一种的碳化物，氮化物或二硼化物形成的尖端，或 由至少一种原子数为57至70的稀土金属元素的六硼化物形成。

公开(公告)号：US08563944B2

公开(公告)日：2013-10-22

申请号：US13595588

申请日：2012-08-27

申请人： Hiroyasu Shichi ,  Shinichi Matsubara ,  Norihide Saho ,  Noriaki Arai ,  Tohru Ishitani

发明人： Hiroyasu Shichi ,  Shinichi Matsubara ,  Norihide Saho ,  Noriaki Arai ,  Tohru Ishitani

IPC分类号： H01J49/10 ,  H01J37/28

CPC分类号： H01J37/08 ,  H01J27/26 ,  H01J37/15 ,  H01J2237/0216 ,  H01J2237/0807 ,  H01J2237/28

摘要： Provided is an ion beam device provided with a gas electric field ionization ion source which can prevent an emitter tip from vibrating in a non-contact manner. The gas electric field ionization ion source is comprised of an emitter tip (21) for generating ions; an emitter base mount (64) for supporting the emitter tip; an ionizing chamber which has an extraction electrode (24) opposed to the emitter tip and which is configured so as to surround the emitter tip (21); and a gas supply tube (25) for supplying gas to the vicinity of the emitter tip. The emitter base mount and a vacuum container magnetically interact with each other.

摘要翻译： 提供了一种具有气体电离电离离子源的离子束装置，其能够防止发射极尖端以非接触的方式振动。 气体电场离子源由用于产生离子的发射极尖端（21）组成; 发射极底座（64），用于支撑发射器尖端; 电离室具有与发射极尖端相对的引出电极（24），其构造为围绕发射极尖端（21）; 以及用于将气体供给到发射极尖端附近的气体供给管（25）。 发射极基座和真空容器彼此磁性相互作用。

公开(公告)号：US20120199758A1

公开(公告)日：2012-08-09

申请号：US13501561

申请日：2010-10-12

申请人： Yoshimi Kawanami ,  Tohru Ishitani

发明人： Yoshimi Kawanami ,  Tohru Ishitani

IPC分类号： H01J3/14 ,  H01T23/00

CPC分类号： H01J37/08 ,  H01J27/26 ,  H01J37/3056 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/0807

摘要： Provided is a gas field ionization ion source capable of emitting heavy ions with high brightness which are suitable for processing a sample. The gas field ionization ion source according to the present invention includes a temperature controller individually controlling the temperature of the tip end of an emitter electrode (1) and the temperature of a gas injection port part (3) of a gas supply unit.

摘要翻译： 提供能够发出适合于处理样品的高亮度的重离子的气体电离离子源。 根据本发明的气体电离离子源包括温度控制器，其分别控制发射极电极（1）的末端的温度和气体供给单元的气体注入口部分（3）的温度。

公开(公告)号：US20120132802A1

公开(公告)日：2012-05-31

申请号：US13381638

申请日：2010-06-08

申请人： Noriaki Arai ,  Tohru Ishitani

发明人： Noriaki Arai ,  Tohru Ishitani

IPC分类号： H01J27/02 ,  H01J37/26

CPC分类号： H01J27/26 ,  H01J37/023 ,  H01J37/08 ,  H01J37/28 ,  H01J2237/006 ,  H01J2237/061 ,  H01J2237/0807

摘要： A gas field ionization ion source apparatus is provided which is small-sized, has high-performance, and is capable of performing a tilt adjustment in a state in which an emitter tip position is maintained approximately constant. An emitter (1) is surrounded by a chamber wall (4) of an emitter chamber and ions are emitted from the tip of the emitter (1). A gas that is an ion material is introduced into the emitter chamber, through an extraction electrode (3) to which a high voltage is applied and a tube (15). The emitter (1) is cooled by a freezing means (10) through a metallic net (11) and an emitter base (12). The emitter base (12) is fixed to a movable portion (13a) of a tilting means (13). The movable portion (13a) is connected to a non-movable portion (13b) through a sliding surface (14). The sliding surface (14) forms a part of a cylindrical surface whose central axis is an axis that passes through the tip of the emitter (1) and is orthogonal to an optical axis. If the surface forms such a shape, and the amount of sliding of the sliding surface (14) is controlled, control on the tilt of the emitter (1) can be performed without moving the tip of the emitter (1).

摘要翻译： 提供了一种小型化，高性能的气体电离离子源装置，并且能够在发射极尖端位置保持大致恒定的状态下进行倾斜调整。 发射器（1）被发射器室的室壁（4）包围，离子从发射器（1）的尖端发射。 作为离子材料的气体通过施加高电压的引出电极（3）和管（15）引入发射室。 发射器（1）由冷冻装置（10）通过金属网（11）和发射极基座（12）冷却。 发射极基座（12）固定在倾斜装置（13）的可动部分（13a）上。 可移动部分（13a）通过滑动表面（14）连接到不可移动部分（13b）。 滑动表面（14）形成圆柱形表面的一部分，其中心轴是穿过发射器（1）的尖端并与光轴正交的轴线。 如果表面形成这样的形状，并且控制滑动表面（14）的滑动量，则可以在不移动发射器（1）的尖端的情况下执行对发射器（1）的倾斜的控制。

公开(公告)号：US20110266465A1

公开(公告)日：2011-11-03

申请号：US13144620

申请日：2010-01-08

申请人： Hiroyasu Shichi ,  Shinichi Matsubara ,  Norihide Saho ,  Noriaki Arai ,  Tohru Ishitani

发明人： Hiroyasu Shichi ,  Shinichi Matsubara ,  Norihide Saho ,  Noriaki Arai ,  Tohru Ishitani

IPC分类号： G01N23/00

CPC分类号： H01J37/08 ,  H01J27/26 ,  H01J37/15 ,  H01J2237/0216 ,  H01J2237/0807 ,  H01J2237/28

摘要： Provided is an ion beam device provided with a gas electric field ionization ion source which can prevent an emitter tip from vibrating in a non-contact manner. The gas electric field ionization ion source is comprised of an emitter tip (21) for generating ions; an emitter base mount (64) for supporting the emitter tip; an ionizing chamber which has an extraction electrode (24) opposed to the emitter tip and which is configured so as to surround the emitter tip (21); and a gas supply tube (25) for supplying gas to the vicinity of the emitter tip. The emitter base mount and a vacuum container magnetically interact with each other.

摘要翻译： 提供了一种具有气体电离电离离子源的离子束装置，其能够防止发射极尖端以非接触的方式振动。 气体电场离子源由用于产生离子的发射极尖端（21）组成; 发射极底座（64），用于支撑发射器尖端; 电离室具有与发射极尖端相对的引出电极（24），其构造为围绕发射极尖端（21）; 以及用于将气体供给到发射极尖端附近的气体供给管（25）。 发射极基座和真空容器彼此磁性相互作用。