公开(公告)号：US20080286656A1

公开(公告)日：2008-11-20

申请号：US11937066

申请日：2007-11-08

申请人： Jaephil CHO ,  Youn-Han Chang ,  Jin-Young Kim

发明人： Jaephil CHO ,  Youn-Han Chang ,  Jin-Young Kim

IPC分类号： H01M4/58 ,  H01M10/00 ,  H01M4/62

CPC分类号： H01M4/485 ,  H01M10/052 ,  H01M2004/021 ,  H01M2004/027 ,  Y02T10/7011

摘要： A negative active material for a lithium secondary battery according to an embodiment of the present invention includes a core material including an inorganic particulate that is capable of forming a compound by a reversible reaction with lithium, and a surface-treatment layer disposed on the surface of the core material. The surface-treatment layer includes a metal having electronic conductivity of 103 S/cm or more. The negative active material can improve high-rate performance of a lithium secondary battery.

摘要翻译： 根据本发明的一个实施方案的用于锂二次电池的负极活性材料包括芯材，其包括能够通过与锂的可逆反应形成化合物的无机颗粒和设置在锂表面的表面处理层 核心材料。 表面处理层包括具有10 3 S / cm以上的电子导电性的金属。 负极活性物质可以提高锂二次电池的高速率性能。

公开(公告)号：US20080182352A1

公开(公告)日：2008-07-31

申请号：US12078048

申请日：2008-03-26

申请人： Won-Ho Cho ,  Gyoo-Chul Jo ,  Gue-Tai Lee ,  Jin-Gyu Kang ,  Beung-Hwa Jeong ,  Jin-Young Kim

发明人： Won-Ho Cho ,  Gyoo-Chul Jo ,  Gue-Tai Lee ,  Jin-Gyu Kang ,  Beung-Hwa Jeong ,  Jin-Young Kim

IPC分类号： H01L21/70

CPC分类号： G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295

摘要： The present invention is an array substrate for use in a liquid crystal display device, which includes a gate electrode, a gate line and a gate pad on a substrate, wherein the gate electrode, the gate line and the gate pad have a double-layered structure consisting of a first metal layer and a first barrier metal layer in series from the substrate, and wherein the first metal is one of aluminum and aluminum alloy; a gate insulation layer on the substrate covering the gate electrode, gate line and gate pad; an active layer and an ohmic contact layer sequentially formed on the gate insulation layer and over the gate electrode; a data line on the gate insulation layer perpendicularly crossing the gate line, source and drain electrodes contacting the ohmic contact layer, and a data pad on the gate insulation layer, wherein the data line, the source and drain electrode and the data pad have a double-layered structure consisting of a second barrier metal layer and a second metal layer of copper; a passivation layer formed on the gate insulation layer to cover the data line, source and drain electrodes, and data pad, wherein the passivation layer has a drain contact hole exposing a portion of the drain electrode, a gate pad contact hole exposing a portion of the gate pad, and a data pad contact hole exposing a portion of the data pad; and a pixel electrode, a gate pad terminal and a data pad terminal on the passivation layer, all of which are formed of a transparent conductive material on the passivation layer.

摘要翻译： 本发明是一种用于液晶显示装置的阵列基板，其包括在基板上的栅电极，栅极线和栅极焊盘，其中栅电极，栅极线和栅极焊盘具有双层 结构由第一金属层和与基板串联的第一阻挡金属层组成，其中第一金属是铝和铝合金之一; 覆盖栅电极，栅极线和栅极焊盘的基板上的栅极绝缘层; 依次形成在栅极绝缘层上和栅电极上的有源层和欧姆接触层; 垂直于栅极线的栅极绝缘层上的数据线，与欧姆接触层接触的源极和漏极以及栅极绝缘层上的数据焊盘，其中数据线，源极和漏极以及数据焊盘具有 由第二阻挡金属层和铜的第二金属层组成的双层结构; 形成在所述栅极绝缘层上以覆盖所述数据线，源极和漏极以及数据焊盘的钝化层，其中所述钝化层具有暴露所述漏电极的一部分的漏极接触孔， 栅极焊盘和暴露数据焊盘的一部分的数据焊盘接触孔; 以及钝化层上的像素电极，栅极焊盘端子和数据焊盘端子，所有这些都由钝化层上的透明导电材料形成。

公开(公告)号：US07352417B2

公开(公告)日：2008-04-01

申请号：US10875986

申请日：2004-06-25

申请人： Won-Ho Cho ,  Gyoo-Chul Jo ,  Gue-Tai Lee ,  Jin-Gyu Kang ,  Beung-Hwa Jeong ,  Jin-Young Kim

发明人： Won-Ho Cho ,  Gyoo-Chul Jo ,  Gue-Tai Lee ,  Jin-Gyu Kang ,  Beung-Hwa Jeong ,  Jin-Young Kim

IPC分类号： G02F1/136

CPC分类号： G02F1/1368 ,  G02F1/136286

摘要： The present invention is an array substrate for use in a liquid crystal display device, which includes a gate electrode, a gate line and a gate pad electrode on a substrate, wherein all of the gate electrode, the gate line and the gate pad electrode have a first barrier metal layer, a first copper layer, and a first out-diffusion film that covers and surrounds the first copper layer. In the liquid crystal display device, the pixel electrode, gate pad terminal and data pad terminal are formed of a transparent conductive material on a passivation layer.

公开(公告)号：US20060223700A1

公开(公告)日：2006-10-05

申请号：US11393440

申请日：2006-03-30

申请人： Hyun-Suk Jung ,  Kug-Sun Hong ,  Jeong-Ryeol Kim ,  Jin-Young Kim ,  Jong-Sung Park ,  Sang-Wook Lee ,  Dong-Wook Kim ,  Jun-Hong Noh

发明人： Hyun-Suk Jung ,  Kug-Sun Hong ,  Jeong-Ryeol Kim ,  Jin-Young Kim ,  Jong-Sung Park ,  Sang-Wook Lee ,  Dong-Wook Kim ,  Jun-Hong Noh

IPC分类号： C01G23/047 ,  B05D7/00 ,  B01J23/00

CPC分类号： C09C1/3661 ,  B01J21/063 ,  B01J21/10 ,  B01J35/004 ,  B01J35/10 ,  B01J35/1023 ,  B01J35/1061 ,  B01J37/0221 ,  C01G23/00 ,  C01P2002/82 ,  C01P2002/84 ,  C01P2004/04

摘要： Disclosed is a method for providing photochemical activity by coating a nano-layer of metallic oxide with nano-sized micropores on the particles or film of titanium dioxide (TiO2). The method for coating the nano-layer of porous oxides with hyperfine nano-sized pores on titanium dioxide (TiO2), comprising producing the solution containing metallic salts, providing the solution of metallic salts with TiO2 powder, hydrating the metallic salts and coating the hydrates on the TiO2 powder surface, and forming oxides from the hydrates coated on the TiO2 powder surface. The formed porous oxide coating layer increases the absorption capacity of water or dye molecules by increasing the specific surface area of titanium dioxide (TiO2) particles, thereby improving a photocatalyst characteristic or dye-sensitized fuel cell characteristic of TiO2.

摘要翻译： 公开了一种通过在二氧化钛（TiO 2）的颗粒或膜上涂覆纳米级的具有纳米级微孔的金属氧化物纳米层来提供光化学活性的方法。 在二氧化钛（TiO 2）上涂覆超细纳米孔的多孔氧化物纳米层的方法，包括制备含有金属盐的溶液，提供金属盐与TiO

公开(公告)号：US20050122443A1

公开(公告)日：2005-06-09

申请号：US10964922

申请日：2004-10-15

申请人： Jin-Young Kim ,  Gyoo-Chul Jo ,  Kyu-Tae Lee ,  Beung-Hwa Jeong ,  Jin-Gyu Kang

发明人： Jin-Young Kim ,  Gyoo-Chul Jo ,  Kyu-Tae Lee ,  Beung-Hwa Jeong ,  Jin-Gyu Kang

IPC分类号： G02F1/136 ,  G02F1/1362

CPC分类号： G02F1/136286 ,  G02F2001/13629

摘要： A semiconductor device includes a substrate having source and drain regions, a gate insulating layer on the substrate, a gate electrode on the gate insulating layer, an interlayer on the gate electrode, a source electrode connected to the source region, and a drain electrode connected to the drain region, wherein at least one of the gate electrode, the source electrode and the drain electrode includes a first metal layer of molybdenum (Mo)-titanium (Ti) alloy, a second metal layer of one of metallic metals including copper (Cu), aluminum (Al), silver (Ag) and gold (Au) on the first metal layer.

摘要翻译： 半导体器件包括具有源极和漏极区域的衬底，衬底上的栅极绝缘层，栅极绝缘层上的栅极电极，栅极电极上的中间层，连接到源极区域的源极和连接到漏极电极的漏电极 其中所述栅电极，所述源电极和所述漏电极中的至少一个包括钼（Mo） - 钛（Ti）合金的第一金属层，包括铜的金属金属之一的第二金属层 Cu），铝（Al），银（Ag）和金（Au）。

公开(公告)号：US5940018A

公开(公告)日：1999-08-17

申请号：US941214

申请日：1997-09-30

申请人： Jin-Young Kim ,  Bhum-Cheol Lee ,  Kwon-Chul Park

发明人： Jin-Young Kim ,  Bhum-Cheol Lee ,  Kwon-Chul Park

IPC分类号： H03M7/14 ,  H03M5/08 ,  H03M13/11 ,  H03M13/31 ,  H04B3/04 ,  H04L7/00 ,  H03M13/00

CPC分类号： H03M13/63 ,  H03M13/11 ,  H03M13/31 ,  H03M5/08

摘要： An nB2P coding/decoding device having a line code function facilitating data transmission and data recovery in the transmission line or link, and a function of a channel code for detecting errors in the recovered data, is provided, including: an nB2P coding device for dividing n bit width parallel data into two data units each having a predetermined bit width, and serial-transmitting the resulting n+2 bit coded data to which two odd parity bits are added, with predetermined n+2 bit with block synchronization data which is orthogonal to the coded data; and an nB2P decoding device for detecting the block synchronization data from the serially transmitted data, converts serial data to parallel form of n+2 bits, checking for errors in the coded data using the odd parity, and removing the odd parity to decode them into the original n bit width parallel data.

摘要翻译： 一种具有促进传输线或链路中的数据传输和数据恢复的线路代码功能的nB2P编码/解码装置，以及用于检测恢复数据中的错误的信道码的功能，包括：nB2P编码装置，用于分割 将n位宽的并行数据分割成具有预定位宽的两个数据单元，并且将具有两个奇校验位的所生成的n + 2位编码数据与预定的n + 2位串联发送，其中正交的块同步数据 到编码数据; 以及用于从串行发送数据检测块同步数据的nB2P解码装置，将串行数据转换成n + 2位的并行形式，使用奇校验检查编码数据中的错误，并且去除奇校验以将其解码为 原始n位宽的并行数据。

公开(公告)号：US20160104671A1

公开(公告)日：2016-04-14

申请号：US14970160

申请日：2015-12-15

申请人： Sung-Il Cho ,  Nam-Gun Kim ,  Jin-Young Kim ,  Hyun-Chul Yoon ,  Bong-Soo Kim ,  Kwan-Sik Cho

发明人： Sung-Il Cho ,  Nam-Gun Kim ,  Jin-Young Kim ,  Hyun-Chul Yoon ,  Bong-Soo Kim ,  Kwan-Sik Cho

IPC分类号： H01L23/528 ,  H01L23/535 ,  H01L29/06 ,  H01L27/108 ,  H01L29/78

CPC分类号： H01L23/528 ,  H01L23/535 ,  H01L27/1052 ,  H01L27/10873 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10888 ,  H01L27/10894 ,  H01L27/10897 ,  H01L29/0649 ,  H01L29/42324 ,  H01L29/45 ,  H01L29/78 ,  H01L29/7827 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having a cell area and a peripheral area includes a semiconductor substrate, a cell insulating isolation region delimiting a cell active region of the semiconductor substrate in the cell area, a word line disposed within the semiconductor substrate in the cell area, a bit line contact plug disposed on the cell active region, a bit line disposed on the bit line contact plug, a peripheral insulating isolation region delimiting a peripheral active region of the semiconductor substrate in the peripheral area, and a peripheral transistor including a peripheral transistor lower electrode and a peripheral transistor upper electrode. The bit line contact plug is formed at the same level in the semiconductor device as the peripheral transistor lower electrode, and the bit line electrode is formed at the same level in the semiconductor device as the peripheral transistor upper electrode.

公开(公告)号：US08529795B2

公开(公告)日：2013-09-10

申请号：US12674554

申请日：2008-08-22

申请人： Kwang-Hee Lee ,  Jin-Young Kim ,  Sung-Heum Park

发明人： Kwang-Hee Lee ,  Jin-Young Kim ,  Sung-Heum Park

IPC分类号： H01B1/00

CPC分类号： C01B13/32 ,  B82Y10/00 ,  C01G23/047 ,  C01G23/053 ,  C01P2002/72 ,  C01P2002/84 ,  C01P2004/04 ,  C01P2006/42 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0046 ,  H01L51/4253 ,  H01L51/448 ,  H01L51/5253 ,  H01L51/5259 ,  Y02E10/549

摘要： A method of preparing a wet-processible metal oxide solution and a method of fabricating a film using the same are provided. A metal oxide that has been widely used as a photocatalyst is improved and a metal oxide solution having new functionality is formed. The metal oxide solution is transparent, wet-processible, and facilitates electron transfer. The metal oxide solution can be applied in various ways to an electronic device and is well-suited for application to an electronic device using organic materials. Also, a titanium oxide solution functions to remove and block oxygen and moisture. Thus, when it is applied to an electronic device using organic materials that are vulnerable to oxygen and moisture, the lifetime of the device can be increased.

摘要翻译： 提供了制备可湿法加工的金属氧化物溶液的方法和使用其制备膜的方法。 广泛用作光催化剂的金属氧化物得到改善，形成具有新功能的金属氧化物溶液。 金属氧化物溶液是透明的，可湿法加工的，并且促进电子转移。 金属氧化物溶液可以以各种方式应用于电子器件，并且非常适用于使用有机材料的电子器件。 此外，氧化钛溶液起到除去和阻断氧气和水分的作用。 因此，当将其应用于使用易受氧气和湿气影响的有机材料的电子设备时，可以增加设备的使用寿命。

公开(公告)号：US08486739B2

公开(公告)日：2013-07-16

申请号：US13154865

申请日：2011-06-07

申请人： Won-Ho Cho ,  Gyoo-Chul Jo ,  Gue-Tai Lee ,  Jin-Gyu Kang ,  Beung-Hwa Jeong ,  Jin-Young Kim

发明人： Won-Ho Cho ,  Gyoo-Chul Jo ,  Gue-Tai Lee ,  Jin-Gyu Kang ,  Beung-Hwa Jeong ,  Jin-Young Kim

IPC分类号： H01L21/84

CPC分类号： C09K13/00 ,  C23F1/18 ,  C23F1/44 ,  G02F2001/13629 ,  H01L21/32134 ,  H01L27/124

摘要： An etchant for forming double-layered signal lines and electrodes of a liquid crystal display device includes hydrogen peroxide (H2O2), a phosphate, F-ions, an organic acid having a carboxyl group (—COOH), a copper (Cu) inhibitor, and a hydrogen peroxide (H2O2) stabilizer, wherein each of the double-layered signal lines and electrodes of the liquid crystal display device includes a first layer of one of aluminum (Al), aluminum alloy (Al-alloy), titanium (Ti), titanium alloy (Ti-alloy), tantalum (Ta), and a tantalum alloy (Ta-alloy) and a second layer of copper (Cu).

摘要翻译： 用于形成液晶显示装置的双层信号线和电极的蚀刻剂包括过氧化氢（H 2 O 2），磷酸盐，F-离子，具有羧基的有机酸（-COOH），铜（Cu）抑制剂， 和二氧化氢（H 2 O 2）稳定剂，其中液晶显示装置的双层信号线和电极中的每一个包括铝（Al），铝合金（Al合金），钛（Ti） ，钛合金（Ti合金），钽（Ta）和钽合金（Ta合金）和第二铜（Cu）层。

公开(公告)号：US08432503B2

公开(公告)日：2013-04-30

申请号：US13100883

申请日：2011-05-04

申请人： Won-Ho Cho ,  Gyoo-Chul Jo ,  Gue-Tai Lee ,  Jin-Gyu Kang ,  Beung-Hwa Jeong ,  Jin-Young Kim

发明人： Won-Ho Cho ,  Gyoo-Chul Jo ,  Gue-Tai Lee ,  Jin-Gyu Kang ,  Beung-Hwa Jeong ,  Jin-Young Kim

IPC分类号： G02F1/136

CPC分类号： G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295

摘要： A method of forming an array substrate for a LCD device includes patterning a first metal layer and a first barrier metal layer to form a gate electrode, a gate line and a gate pad; forming a gate insulation layer to cover the gate electrode, line and pad; forming an active layer, an ohmic contact layer, a second barrier metal layer and a second metal layer including a copper (Cu) layer on the gate insulation layer; patterning the second metal layer and the second barrier metal layer by a first etching process; patterning an exposed portion of the second metal layer and the second barrier metal layer and ohmic contact layer to form source and drain electrodes each having a double layered structure of the second barrier metal layer and the second metal layer; and forming a pixel electrode on a passivation layer formed on the source and drain electrodes.

摘要翻译： 形成LCD器件的阵列基板的方法包括：图案化第一金属层和第一势垒金属层以形成栅电极，栅极线和栅极焊盘; 形成栅极绝缘层以覆盖栅电极，线和焊盘; 在所述栅极绝缘层上形成有源层，欧姆接触层，第二阻挡金属层和包含铜（Cu）层的第二金属层; 通过第一蚀刻工艺图案化第二金属层和第二阻挡金属层; 图案化第二金属层和第二阻挡金属层和欧姆接触层的暴露部分，以形成各自具有第二阻挡金属层和第二金属层的双层结构的源极和漏极; 以及在形成在源极和漏极上的钝化层上形成像素电极。