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    Magnetoresistive element, magnetoresistive head, magnetic recording apparatus, and magnetic memory
    72.
    发明授权
    Magnetoresistive element, magnetoresistive head, magnetic recording apparatus, and magnetic memory 有权
    磁阻元件，磁阻磁头，磁记录装置和磁存储器

    公开(公告)号：US07525776B2

    公开(公告)日：2009-04-28

    申请号：US11269878

    申请日：2005-11-09

    申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Katsuhiko Koui ,  Hitoshi Iwasaki

    发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Katsuhiko Koui ,  Hitoshi Iwasaki

    IPC分类号： G11B5/39

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3929 ,  H01F10/3259 ,  H01L27/224 ,  H01L27/228

    摘要： A magnetoresistive element has a magnetization pinned layer a magnetization direction of which is substantially pinned in one direction, a magnetization free layer a magnetization direction of which varies depending on an external field, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating the insulating layer, the magnetization pinned layer or magnetization free layer located under the spacer layer comprising crystal grains separated by grain boundaries extending across a thickness thereof, in which, supposing that an in-plane position of one end of each of the crystal grains is set to 0 and an in-plane position of a grain boundary adjacent to the other end of the crystal grain is set to 100, the current path corresponding the crystal grain is formed on a region in a range between 20 and 80 of the in-plane position.

    摘要翻译： 磁阻元件具有磁化固定层，其磁化方向基本上被固定在一个方向上，磁化自由层的磁化方向根据外部磁场而变化，并且包括绝缘层的间隔层设置在磁化被钉扎层 以及穿过绝缘层的磁化自由层和电流路径，位于间隔层下方的磁化固定层或磁化自由层，其包含由跨过其厚度延伸的晶界分离的晶粒，其中，假设面内位置 将每个晶粒的一端设定为0，将与晶粒的另一端相邻的晶界的面内位置设定为100，在晶粒的区域形成与晶粒对应的电流路径 范围在平面内的20到80之间。

    Spin injection layer robustness for microwave assisted magnetic recording
    73.
    发明申请
    Spin injection layer robustness for microwave assisted magnetic recording 有权
    微波辅助磁记录的自旋注入层鲁棒性

    公开(公告)号：US20130082787A1

    公开(公告)日：2013-04-04

    申请号：US13200844

    申请日：2011-10-03

    申请人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou ,  Soichi Oikawa ,  Hitoshi Iwasaki ,  Kenichiro Yamada ,  Katsuhiko Koui

    发明人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou ,  Soichi Oikawa ,  Hitoshi Iwasaki ,  Kenichiro Yamada ,  Katsuhiko Koui

    IPC分类号： H03B7/00 ,  C23C14/14 ,  C23C14/35 ,  B05D5/00 ,  B05D3/02

    CPC分类号： H03B15/006 ,  C23C14/025 ,  C23C14/165 ,  G11C5/005 ,  G11C11/161 ,  Y10T428/1114

    摘要： A spin transfer (torque) oscillator (STO) with a non-magnetic spacer formed between a spin injection layer (SIL) and a field generation layer (FGL), and with an interfacial layer comprised of Fe(100-V)CoV where v is from 5 to 100 atomic % formed between the SIL and non-magnetic spacer is disclosed. A composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture is used to enhance perpendicular magnetic anisotropy (PMA) in the STO device. The interfacial layer quenches SIL oscillations and thereby stabilizes the SIL against FGL oscillations. The interfacial layer preferably has a thickness from 5 to 50 Angstroms and enhances amplitude (dR/R) in the STO device. The STO device may have a top SIL or bottom SIL configuration. The SIL is typically a laminated structure such as (Co/Ni)X where x is between 5 and 50.

    摘要翻译： 具有在自旋注入层（SIL）和场产生层（FGL）之间形成的非磁性间隔物的自旋转移（扭矩）振荡器（STO），以及由Fe（100-V）CoV组成的界面层，其中v 公开了在SIL和非磁性间隔物之间​​形成的5至100原子％。 使用由Ta制成的复合晶种层和具有fcc（111）或hcp（001）结构的金属层来增强STO器件中的垂直磁各向异性（PMA）。 界面层淬灭SIL振荡，从而使SIL稳定于FGL振荡。 界面层优选具有5至50埃的厚度，并且增强STO器件中的振幅（dR / R）。 STO设备可能具有顶部SIL或底部SIL配置。 SIL通常是诸如（Co / Ni）X的层压结构，其中x在5和50之间。

    Method and apparatus for manufacturing magnetoresistive element
    75.
    发明授权
    Method and apparatus for manufacturing magnetoresistive element 有权
    用于制造磁阻元件的方法和装置

    公开(公告)号：US08153188B2

    公开(公告)日：2012-04-10

    申请号：US12248578

    申请日：2008-10-09

    申请人： Hideaki Fukuzawa ,  Katsuhiko Koui ,  Hiromi Yuasa ,  Susumu Hashimoto ,  Hitoshi Iwasaki

    发明人： Hideaki Fukuzawa ,  Katsuhiko Koui ,  Hiromi Yuasa ,  Susumu Hashimoto ,  Hitoshi Iwasaki

    IPC分类号： G11B5/127 ,  G11B5/00 ,  G11B5/62 ,  H05H1/00

    CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3909 ,  G11B5/3929 ,  G11B2005/3996 ,  G11C11/161 ,  H01L27/224 ,  H01L27/228 ,  H01L43/08 ,  Y10T428/115

    摘要： The present invention relates to a method for manufacturing a magnetoresistive element having a magnetization pinned layer, a magnetization free layer, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating into the insulating layer. A process of forming the spacer layer in the method includes depositing a first metal layer forming the metal paths, depositing a second metal layer on the first metal layer, performing a pretreatment of irradiating the second metal layer with an ion beam or a RF plasma of a rare gas, and converting the second metal layer into the insulating layer by means of supplying an oxidation gas or a nitriding gas.

    摘要翻译： 本发明涉及一种用于制造具有磁化钉扎层，磁化自由层和间隔层的磁阻元件的方法，所述隔离层包括设置在磁化被钉扎层和磁化自由层之间的绝缘层，以及穿透绝缘层的电流路径 。 在该方法中形成间隔层的工艺包括沉积形成金属路径的第一金属层，在第一金属层上沉积第二金属层，执行用离子束或RF等离子体照射第二金属层的预处理 稀有气体，并且通过供给氧化气体或氮化气体将第二金属层转化为绝缘层。

    Method and apparatus for manufacturing magnetoresistive element
    76.
    发明授权
    Method and apparatus for manufacturing magnetoresistive element 有权
    用于制造磁阻元件的方法和装置

    公开(公告)号：US07514117B2

    公开(公告)日：2009-04-07

    申请号：US11199448

    申请日：2005-08-09

    申请人： Hideaki Fukuzawa ,  Katsuhiko Koui ,  Hiromi Yuasa ,  Susumu Hashimoto ,  Hitoshi Iwasaki

    发明人： Hideaki Fukuzawa ,  Katsuhiko Koui ,  Hiromi Yuasa ,  Susumu Hashimoto ,  Hitoshi Iwasaki

    IPC分类号： B05D5/12

    CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3909 ,  G11B5/3929 ,  G11B2005/3996 ,  G11C11/161 ,  H01L27/224 ,  H01L27/228 ,  H01L43/08 ,  Y10T428/115

    摘要： The present invention relates to a method for manufacturing a magnetoresistive element having a magnetization pinned layer, a magnetization free layer, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating into the insulating layer. A process of forming the spacer layer in the method includes depositing a first metal layer forming the metal paths, depositing a second metal layer on the first metal layer, performing a pretreatment of irradiating the second metal layer with an ion beam or a RF plasma of a rare gas, and converting the second metal layer into the insulating layer by means of supplying an oxidation gas or a nitriding gas.

    摘要翻译： 本发明涉及一种用于制造具有磁化钉扎层，磁化自由层和间隔层的磁阻元件的方法，所述隔离层包括设置在磁化被钉扎层和磁化自由层之间的绝缘层，以及穿透绝缘层的电流路径 。 在该方法中形成间隔层的工艺包括沉积形成金属路径的第一金属层，在第一金属层上沉积第二金属层，执行用离子束或RF等离子体照射第二金属层的预处理 稀有气体，并且通过供给氧化气体或氮化气体将第二金属层转化为绝缘层。

    METHOD AND APPARATUS FOR MANUFACTURING MAGNETORESISTIVE ELEMENT
    77.
    发明申请
    METHOD AND APPARATUS FOR MANUFACTURING MAGNETORESISTIVE ELEMENT 有权
    用于制造磁性元件的方法和装置

    公开(公告)号：US20090061105A1

    公开(公告)日：2009-03-05

    申请号：US12248578

    申请日：2008-10-09

    申请人： Hideaki FUKUZAWA ,  Katsuhiko Koui ,  Hiromi Yuasa ,  Susumu Hashimoto ,  Hitoshi Iwasaki

    发明人： Hideaki FUKUZAWA ,  Katsuhiko Koui ,  Hiromi Yuasa ,  Susumu Hashimoto ,  Hitoshi Iwasaki

    IPC分类号： B05D5/12

    CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3909 ,  G11B5/3929 ,  G11B2005/3996 ,  G11C11/161 ,  H01L27/224 ,  H01L27/228 ,  H01L43/08 ,  Y10T428/115

    摘要： The present invention relates to a method for manufacturing a magnetoresistive element having a magnetization pinned layer, a magnetization free layer, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating into the insulating layer. A process of forming the spacer layer in the method includes depositing a first metal layer forming the metal paths, depositing a second metal layer on the first metal layer, performing a pretreatment of irradiating the second metal layer with an ion beam or a RF plasma of a rare gas, and converting the second metal layer into the insulating layer by means of supplying an oxidation gas or a nitriding gas.

    摘要翻译： 本发明涉及一种用于制造具有磁化钉扎层，磁化自由层和间隔层的磁阻元件的方法，所述隔离层包括设置在磁化被钉扎层和磁化自由层之间的绝缘层，以及穿透绝缘层的电流路径 。 在该方法中形成间隔层的工艺包括沉积形成金属路径的第一金属层，在第一金属层上沉积第二金属层，执行用离子束或RF等离子体照射第二金属层的预处理 稀有气体，并且通过供给氧化气体或氮化气体将第二金属层转化为绝缘层。

    Laminated magnetorestrictive element of an exchange coupling film, an antiferromagnetic film and a ferromagnetic film and a magnetic disk drive using same
    79.
    发明授权
    Laminated magnetorestrictive element of an exchange coupling film, an antiferromagnetic film and a ferromagnetic film and a magnetic disk drive using same 失效
    交换耦合膜的叠层磁致伸缩元件，反铁磁膜和铁磁膜以及使用它的磁盘驱动器

    公开(公告)号：US06313973B1

    公开(公告)日：2001-11-06

    申请号：US09343270

    申请日：1999-06-30

    申请人： Hiromi Fuke ,  Kazuhiro Saito ,  Katsuhiko Koui ,  Hideaki Fukuzawa ,  Akiko Saito ,  Hitoshi Iwasaki

    发明人： Hiromi Fuke ,  Kazuhiro Saito ,  Katsuhiko Koui ,  Hideaki Fukuzawa ,  Akiko Saito ,  Hitoshi Iwasaki

    IPC分类号： G11B530

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3263 ,  H01F10/3268 ,  H01F10/3272

    摘要： A magnetoresistive element comprises an exchange coupling film having a under layer, an antiferromagnetic film and a ferromagnetic film, which are laminated in that order, the under layer including a metal having a face centered cubic crystal structure or hexagonal closest packing crystal structure which have a longer nearest neighbor atomic distance than that of the antiferromagnetic film. With this construction, it is possible to improve the exchange coupling field and to satisfy a stable output over a long period of time. A magnetoresistive element having a dual spin valve structure has a magnetization adjusting layer, which is antiferromagnetically connected to a pinned layer via an anti-parallel connection layer, to adjust the value of the product of the saturation magnetization of each of the magnetization adjusting layer and the pinned layer by the thickness thereof. Moreover, a magnetoresistance head use a giant magnetoresistance effect, and has at least one pair of pinned layer and free layer arranged via a non-magnetic spacer layer. The pinned layer has a pair of ferromagnetic layers which have different compositions and different coercive forces and which are antiferromagnetically connected to each other via a connection layer, so that the effective exchange coupling field of the pinned layer is 200 Oe or more.

    摘要翻译： 磁阻元件包括具有下层，反铁磁膜和铁磁膜的交换耦合膜，其按顺序层压，下层包括具有面心立方晶体结构的金属或具有六面体最密堆积晶体结构的金属，其具有 比反铁磁膜的最近邻原子距离更长。 利用这种结构，可以改善交换耦合场并且能够长时间地满足稳定的输出。 具有双自旋阀结构的磁阻元件具有磁化调节层，其通过反并联连接层反铁磁连接到被钉扎层，以调节每个磁化调节层的饱和磁化强度和 被钉扎层的厚度。 此外，磁阻头使用巨磁电阻效应，并且具有通过非磁性间隔层布置的至少一对被钉扎层和自由层。 钉扎层具有一对铁磁层，其具有不同的组成和不同的矫顽力，并且经由连接层彼此反铁磁连接，使得钉扎层的有效交换耦合场为200Oe以上。