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71.发明授权Photoacid generators, photoresist compositions containing the same and pattering method with the use of the compositions 失效光酸产生剂，含有其的光致抗蚀剂组合物和使用组合物的图案化方法公开(公告)号：US06849384B2
公开(公告)日：2005-02-01
申请号：US10333579
申请日：2001-07-23
IPC分类号： C07C381/12 , C07D333/46 , C07D335/02 , C08K5/36 , C08L101/00 , G03F7/004 , G03F7/038 , G03F7/039 , G03F7/20 , H01L21/027 , G03F7/031 , C07D319/00 , C07D321/00 , C07D409/00
CPC分类号： G03F7/0045 , C07C381/12 , C07D333/46 , G03F7/0397 , Y10S430/115 , Y10S430/122 , Y10S430/123
摘要： Photoacid generators comprising sulfonium salt compounds represented by the following general formula (2) wherein R1 and R2 represent each an alkyl group optionally having oxo, or R1 and R2 may be cyclized together to form an alkylene group optionally having oxo; R3, R4 and R5 represent each hydrogen or a linear, branched, monocyclic, polycyclic or crosslinked cyclic alkyl group; and Y− represents a counter ion.
摘要翻译： 包含下列通式（2）表示的锍盐化合物的光酸产生剂，其中R 1和R 2各自表示任选具有氧代的烷基，或R 1和R 2可以一起环化形成 任选具有氧代的亚烷基; R 3，R 4和R 5各自表示氢或直链，支链，单环，多环或交联的环状烷基; 而Y - 代表抗衡离子。
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72.发明授权Chemically amplified resist, polymer for the chemically amplified resist, monomer for the polymer and method for transferring pattern to chemically amplified resist layer 失效化学放大抗蚀剂，化学放大抗蚀剂聚合物，聚合物单体和将图案转移到化学增强抗蚀剂层的方法公开(公告)号：US06639084B2
公开(公告)日：2003-10-28
申请号：US10167499
申请日：2002-06-13
申请人： Katsumi Maeda , Kaichiro Nakano
发明人： Katsumi Maeda , Kaichiro Nakano
IPC分类号： C07D31316
CPC分类号： G03F7/0395 , C07D309/30 , C08F20/30 , C08F34/02 , G03F7/0397
摘要： Chemically amplified resist is produced on the basis of vinyl polymer having 3-oxo-4-oxabicyclo[3.2.1]otane-2-yl group expressed by general formula (1) where each of L1, L2, L3, L4, L5 and L6 is selected from the group consisting of hydrogen atom and alkyl groups having the carbon number from 1 to 8, and the hydrogen atom and/or the alkyl group at L5 and L6 are replaced with alkylene groups having the carbon number from 1 to 10 and bonded to each other for forming a ring so that the resist exhibits high transparency to light equal to or less than 220 nm wavelength, large resistance against dry etching and good adhesion to substrates.
摘要翻译： 基于由通式（1）表示的3-氧代-4-氧杂双环[3.2.1] ane烷-2-基的乙烯基聚合物生产化学扩增抗蚀剂，其中L 1，L 2， L 3，L 4，L 5和L 6选自氢原子和碳原子数1〜8的烷基，氢原子和/或烷基 在L 5和L 6被碳原子数为1〜10的亚烷基取代，并且彼此键合形成环，使得抗蚀剂对波长等于或小于220nm的光具有高透明度， 抗干蚀刻性能好，对基片粘合性好。
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73.发明授权Sulfonium salt compound and resist composition and pattern forming method using the same 失效锍盐化合物及其抗蚀剂组合物和图案形成方法公开(公告)号：US06602647B2
公开(公告)日：2003-08-05
申请号：US09734563
申请日：2000-12-13
IPC分类号： G03F7004
CPC分类号： C07D333/32 , C07D333/46 , C07D335/02 , G03F7/0045 , Y10S430/123
摘要： The present invention relates to a photo acid generator which has high transparency to exposure light and also has excellent heat stability in a photoresist composition for lithography using far ultraviolet light, especially light of ArF excimer laser. The photo acid generator contains a sulfonium salt compound represented by the following general formula (1): wherein R1 represents an alkylene group, or an alkylene group having an oxo group, R2 represents a straight-chain, branched-chain, monocyclic, polycyclic or bridged cyclic alkyl group having an oxo group, or a straight-chain, branched-chain, monocyclic, polycyclic or bridged cyclic alkyl group, provided that either of R1 and R2 has an oxo group, and Y− represents a counter ion.
摘要翻译： 本发明涉及对曝光光具有高透明度的光酸产生剂，并且在使用远紫外光，特别是ArF准分子激光的光的光致抗蚀剂组合物中也具有优异的热稳定性。 光酸产生剂含有下列通式（1）表示的锍盐化合物：其中R1表示亚烷基或具有氧代基的亚烷基，R2表示直链，支链，单环，多环或 具有氧代基的桥连环状烷基或直链，支链，单环，多环或桥连环状烷基，条件是R 1和R 2中的任一个具有氧代基，Y-表示抗衡离子。
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74.发明授权Chemically amplified resist large in transparency and sensitivity to exposure light less than 248 nanometer wavelength and process of forming mask 失效化学放大抗蚀剂的透明度和曝光光的敏感性大于248纳米波长和形成掩模的工艺公开(公告)号：US06287746B1
公开(公告)日：2001-09-11
申请号：US09036219
申请日：1998-03-06
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , G03F7/038 , Y10S430/111
摘要： Monomers expressed by the following general formula are polymerized so as to obtain polymer, and the polymer and photoacid generator is dissolved in solvent so as to form a chemically amplified resist layer large in both transparency and sensitivity to ArF excimer laser light and improved in resolution. wherein R1 represents a hydrogen atom or a methyl group, R2 represents a bridged hydrocarbon group having the carbon number between 7 and 22, m equals 0 or 1, n equals 0 or 1 and R3 represents a hydrogen atom, a methyl group or an acetyl group.
摘要翻译： 聚合由以下通式表示的单体以获得聚合物，并且将聚合物和光致酸产生剂溶解在溶剂中以形成对ArF准分子激光的透明度和灵敏度都大且分辨率提高的化学放大抗蚀剂层。 其中R 1表示氢原子或甲基，R 2表示碳原子数为7〜22的桥连烃基，m为0或1，n为0或1，R 3为氢原子，甲基或乙酰基 组。
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75.发明授权Negative photoresist composition using polymer having 1,2-diol structure and process for forming pattern using the same 失效使用具有1,2-二醇结构的聚合物的负光致抗蚀剂组合物和使用其形成图案的方法
公开(公告)号：US6146806A
公开(公告)日：2000-11-14
申请号：US285730
申请日：1999-04-05
CPC分类号： G03F7/038 , G03F7/0045 , Y10S430/111
摘要： It is an object of the present invention to provide a negative photoresist composition for lithography, using short-wavelength light such as ArF excimer laser beam as a light source.The negative photoresist composition of the present invention is a negative photoresist composition comprising at least a polymer having a unit represented by the general formula (1) ##STR1## , a crosslinking agent and a photo-acid generating agent, and the crosslinking agent is capable of crosslinking the polymer in the presence of an acid catalyst, whereby the polymer is insolubilized in a developer. Since the negative resist composition of the present invention is insolubilized in the developer by an action of an acid produced from the photo-acid generating agent at the exposed portion, a negative pattern can be obtained. Since the polymer has not a benzene ring, unlike a base polymer of a conventional negative resist, the polymer has high transparency to ArF excimer laser beam and also has high etching resistance because of its bridged alicyclic group.
摘要翻译： 本发明的目的是提供一种用于光刻的负性光致抗蚀剂组合物，其使用诸如ArF准分子激光束之类的短波长光作为光源。 本发明的负型光致抗蚀剂组合物是含有至少具有由通式（1）表示的单元的聚合物，交联剂和光酸产生剂的负性光致抗蚀剂组合物，交联剂能够交联 聚合物在酸催化剂的存在下，由此聚合物不溶于显影剂中。 由于本发明的负光刻胶组合物通过在曝光部分由光酸产生剂产生的酸的作用而在显影剂中不溶解，因此可以获得负图案。 由于聚合物不具有苯环，与常规的负性抗蚀剂的基础聚合物不同，聚合物对ArF准分子激光束具有高透明度，并且由于其桥连的脂环族基团也具有高耐蚀刻性。
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76.发明授权
公开(公告)号：US06074801A
公开(公告)日：2000-06-13
申请号：US140652
申请日：1998-08-26
IPC分类号： C08L33/14 , G03F7/004 , G03F7/038 , H01L21/027
CPC分类号： G03F7/038 , G03F7/0045 , Y10S430/109
摘要： A negative type photoresist composition is composed of a polymer which contains a repetition unit which is expressed by a general chemical formula (1), a crosslinker composed of a compound which contains a functional group which is expressed by a general chemical formula (2), and a photo-acid generator which generates acid in response to a light. The chemical formula (1) is as follows, ##STR1## In this case, R.sup.1 is a hydrogen atom or a methyl group, R.sup.2 is an alkylene group containing carbon atoms in a range of 7 to 18 and having a bridged cyclic hydrocarbon group, and a weight average molecule weight of the polymer is in a range of 1000 to 500000. Also, the chemical formula (2) is as follows, ##STR2## In this case, R.sup.8 is a hydrogen atom, an alkyl group containing carbon atoms in a range of 1 to 6 or an oxoalkyl group containing carbon atoms in a range of 3 to 6.
摘要翻译： 负型光致抗蚀剂组合物由含有由通式（1）表示的重复单元的聚合物构成，由含有由通式（2）表示的官能团的化合物构成的交联剂， 以及响应于光而产生酸的光酸发生剂。 化学式（1）如下，在这种情况下，R 1为氢原子或甲基，R 2为碳原子数为7〜18的亚烷基，具有桥连环状烃基， 聚合物的平均分子量在1000〜500000的范围内。此外，化学式（2）如下，在这种情况下，R 8为氢原子，碳原子数为1〜6的烷基 或含有3〜6个碳原子的氧代烷基。
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77.发明授权Polymer having silicon atoms and sulfonium salt units and photoresist compositions containing the same 失效具有硅原子和锍盐单元的聚合物和含有它们的光致抗蚀剂组合物
公开(公告)号：US5747622A
公开(公告)日：1998-05-05
申请号：US797939
申请日：1997-02-12
CPC分类号： C08G77/60 , C08G77/48 , C08G77/52 , G03F7/0045 , G03F7/0757
摘要： A polymer having silicon atoms and sulfonium salt units in its main chain is provided which is obtained from a reaction between a polymer having silicon atoms, which is obtained by polymerizing 4,4'-thiodiphenol or a mixture of 4,4'-thiodiphenol and a diol compound and a silane or siloxane derivative, and a diaryliodonium salt or an alkyl. halide. The polymer having both silicon atoms and sulfonium salt units in its main chain are useful as a photoacid generator for chemically amplified resist and a base resin and a dissolution inhibitor for the resist.
摘要翻译： 提供在其主链中具有硅原子和锍盐单元的聚合物，其由具有硅原子的聚合物之间的反应获得，其通过聚合4,4'-硫代二酚或4,4'-硫代二酚的混合物和 二醇化合物和硅烷或硅氧烷衍生物，以及二芳基碘鎓盐或烷基。 卤化物。 在其主链中具有硅原子和锍盐单元的聚合物可用作化学放大抗蚀剂的光酸产生剂和用于抗蚀剂的基础树脂和溶解抑制剂。
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78.发明授权
公开(公告)号：US5635332A
公开(公告)日：1997-06-03
申请号：US274436
申请日：1994-07-13
CPC分类号： G03F7/0045 , C07C381/12 , C07C2101/08 , C07C2101/14 , C07C2103/74 , Y10S430/111 , Y10S430/122
摘要： A photoresist composition containing an alkylsulfonium salt compound represented by the following general formula (I): ##STR1## wherein R.sup.1 and R.sup.2 may be the same or different, each being a linear, branched or cyclic C.sub.1 to C.sub.8 alkyl radical, R.sup.3 is a linear, branched or cyclic C.sub.1 to C.sub.8 alkyl radical, a C.sub.5 to C.sub.7 2-oxocycloalkyl radical, or a linear or branched C.sub.3 to C.sub.8 2-oxoalkyl radical, and Y.sup.- represents a counter ion. The photoresist composition has high transparency to deep U.V. light having wavelengths of 220 nm or less and is capable of forming good fine patterns with high sensitivity, thus being useful as chemically amplified type resist which is exposed to the deep U.V. light from an ArF excimer laser.
摘要翻译： 含有由以下通式（I）表示的烷基锍盐化合物的光致抗蚀剂组合物：其中R 1和R 2可以相同或不同，各自为直链，支链或环状的C 1至C 8烷基，R 3 是直链，支链或环状的C1至C8烷基，C5至C72-氧代环烷基，或直链或支链C3至C82-氧代烷基，Y-表示抗衡离子。 光致抗蚀剂组合物对深紫外线具有高透明度。 具有220nm或更小波长的光并能够形成具有高灵敏度的良好精细图案，因此可用作暴露于深紫外线的化学放大型抗蚀剂。 来自ArF准分子激光的光。
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公开(公告)号：US5439990A
公开(公告)日：1995-08-08
申请号：US113060
申请日：1993-08-30
申请人： Katsumi Maeda , Kaichiro Nakano , Etsuo Hasegawa
发明人： Katsumi Maeda , Kaichiro Nakano , Etsuo Hasegawa
IPC分类号： C08G75/02 , C08G75/06 , G03F7/004 , G03F7/029 , G03F7/038 , G03F7/039 , H01L21/027 , H01L21/30 , C08L81/04 , C08G75/04
CPC分类号： G03F7/039 , C08G75/0286
摘要： There is provided an highpolymer of the formula: ##STR1## where at least one of R.sup.1 and R.sup.2 is either an alkyl group having 1 and 3 carbons atoms or an alkoxy group having 1 to 3 carbon atoms and the other is hydrogen, R.sup.3 is either a phenyl group or an alkyl group having 1 to 3 carbon atoms, x satisfies the condition that 0
摘要翻译： 提供下式的高分子：其中R 1和R 2中的至少一个是具有1和3个碳原子的烷基或具有1至3个碳原子的烷氧基，另一个是氢，R 3是 苯基或碳原子数1〜3的烷基，x满足0
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公开(公告)号：US5186912A
公开(公告)日：1993-02-16
申请号：US637054
申请日：1991-01-03
IPC分类号： A47L15/44
CPC分类号： A47L15/4445 , Y10T137/4891
摘要： A dispenser (10) and method for washing dishes and utensils in a dishwashing machine are disclosed. The dispenser (10) is comprised of a container (11) and lid (12), the dispenser containing a solid detergent composition (13). A slot (23) in a side wall (17) and baffle (26) allow for controlled drainage of the detergent solution. The lid (12) has a plurality of openings (18) through which water from the dishwashing machine enters, so as to dissolve the solid detergent (13). The dispenser (10) is positioned within the washing chamber (20) of a dishwashing machine (19).
摘要翻译： 公开了一种分配器（10）以及洗碗机中的餐具清洗方法。 分配器（10）由容器（11）和盖（12）组成，分配器包含固体洗涤剂组合物（13）。 在侧壁（17）和挡板（26）中的槽（23）允许洗涤剂溶液的受控排水。 盖（12）具有多个开口（18），来自洗碗机的水进入其中，从而溶解固体洗涤剂（13）。 分配器（10）位于洗碗机（19）的洗涤室（20）内。
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