公开(公告)号：US07567018B2

公开(公告)日：2009-07-28

申请号：US11400407

申请日：2006-04-10

Applicant: Takashi Kawakubo ,  Toshihiko Nagano ,  Kazuhide Abe ,  Michihiko Nishigaki

Inventor： Takashi Kawakubo ,  Toshihiko Nagano ,  Kazuhide Abe ,  Michihiko Nishigaki

IPC: H01L41/08

CPC classification number: B81B3/0021 ,  B81B2201/014 ,  B81B2201/045 ,  G02B26/0858 ,  H01G5/18 ,  H01G5/40 ,  H01H2057/006

Abstract: A micro-mechanical device includes a first piezoelectric actuator including a piezoelectric film, and lower and upper electrodes interleaving the piezoelectric film, and extending from a first fixing part on a substrate to a first operating end, and a second piezoelectric actuator connected to the first piezoelectric actuator via a connecting part at the first operating end of the first piezoelectric actuator, and extending from the connecting part to a second operating end, the second piezoelectric actuator being shorter than the first piezoelectric actuator.

Abstract translation: 微机械装置包括：第一压电致动器，其包括压电膜，下电极和上电极交错压电膜，并从衬底上的第一固定部分延伸到第一操作端;以及第二压电致动器， 压电致动器经由第一压电致动器的第一操作端处的连接部分并且从连接部分延伸到第二操作端，第二压电致动器比第一压电致动器短。

公开(公告)号：US07490390B2

公开(公告)日：2009-02-17

申请号：US11741473

申请日：2007-04-27

Applicant: Takashi Kawakubo ,  Kazuhide Abe ,  Mayumi Morizuka

Inventor： Takashi Kawakubo ,  Kazuhide Abe ,  Mayumi Morizuka

IPC: H04R17/10

CPC classification number: H03H9/173 ,  H03B5/326 ,  H03B5/366 ,  H03H9/0542 ,  H03H2009/02204 ,  Y10T29/42 ,  Y10T29/43 ,  Y10T29/49005 ,  Y10T29/49155

Abstract: A manufacturing method is provided for a voltage controlled oscillator comprising an thin film BAW resonator and a variable capacitor element. The thin film BAW resonator includes an anchor section formed on a Si substrate, a lower electrode supported on the anchor section and positioned to face the Si substrate, a first piezoelectric film formed on the lower electrode, and an upper electrode formed on the first piezoelectric film. The variable capacitor element includes a stationary electrode formed on a Si substrate, an anchor section formed on the Si substrate, a first electrode supported on the anchor section and positioned to face the Si substrate, a second piezoelectric film formed on the first electrode, and a second electrode formed on the second piezoelectric film.

Abstract translation: 为包括薄膜BAW谐振器和可变电容器元件的压控振荡器提供制造方法。 薄膜BAW谐振器包括形成在Si衬底上的锚定部分，支撑在锚固部分上并定位成面对Si衬底的下电极，形成在下电极上的第一压电膜，以及形成在第一压电 电影。 所述可变电容器元件包括形成在Si衬底上的固定电极，形成在所述Si衬底上的锚定部分，支撑在所述锚固部分上并且定位成面对所述Si衬底的第一电极，形成在所述第一电极上的第二压电膜，以及 形成在第二压电膜上的第二电极。

公开(公告)号：US07465981B2

公开(公告)日：2008-12-16

申请号：US11116190

申请日：2005-04-28

Applicant: Kazuhide Abe

Inventor： Kazuhide Abe

IPC: H01L27/108

CPC classification number: H01L21/76877 ,  H01L21/76802 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/7687 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/40

Abstract: A semiconductor device includes a semiconductor substrate; a first electrode formed over the semiconductor substrate; a first insulation film covering the first electrode and having an aperture for exposing a part of the first electrode; a first conductive film formed on a part of the first insulation film and the first electrode inside the aperture; an isolation region placed inside the aperture; and a second conductive film formed on the first conductive film and the isolation region.

Abstract translation: 半导体器件包括半导体衬底; 形成在半导体衬底上的第一电极; 覆盖所述第一电极并具有用于暴露所述第一电极的一部分的孔的第一绝缘膜; 形成在第一绝缘膜的一部分上的第一导电膜和孔内的第一电极; 放置在孔内的隔离区; 以及形成在第一导电膜和隔离区上的第二导电膜。

公开(公告)号：US07459833B2

公开(公告)日：2008-12-02

申请号：US11054404

申请日：2005-02-10

Applicant: Takashi Kawakubo ,  Ryoichi Ohara ,  Tomio Ono ,  Toshihiko Nagano ,  Michihiko Nishigaki ,  Takaaki Yasumoto ,  Kazuhide Abe ,  Kenya Sano

Inventor： Takashi Kawakubo ,  Ryoichi Ohara ,  Tomio Ono ,  Toshihiko Nagano ,  Michihiko Nishigaki ,  Takaaki Yasumoto ,  Kazuhide Abe ,  Kenya Sano

IPC: H01L41/08

CPC classification number: H01G7/06 ,  H01H2057/006 ,  H01L41/0933 ,  H01L41/094

Abstract: A thin film piezoelectric actuator comprises a driving part at least one end of which is supported by an anchor portion. The driving part includes: a piezoelectric film, a first lower electrode provided under a first region of the piezoelectric film, a second lower electrode provided under a second region different from the first region of the piezoelectric film, a first upper electrode provided opposite to the first lower electrode on the piezoelectric film, a second upper electrode provided opposite to the second lower electrode on the piezoelectric film, a first connection part that electrically connects the first lower electrode and the second upper electrode via a first via hole formed in the piezoelectric film, and a second connection part that electrically connects the second lower electrode and the first upper electrode via a second via hole formed in the piezoelectric film.

Abstract translation: 薄膜压电致动器包括驱动部件，其至少一端由锚固部分支撑。 驱动部包括：压电膜，设置在压电膜的第一区域下方的第一下电极，设置在与压电膜的第一区不同的第二区域下方的第二下电极，与第一下电极相对设置的第一上电极 压电膜上的第一下电极，与压电膜上的第二下电极相对设置的第二上电极，经由形成在压电膜中的第一通孔电连接第一下电极和第二上电极的第一连接部 以及第二连接部，其经由形成在所述压电膜中的第二通路孔电连接所述第二下部电极和所述第一上部电极。

公开(公告)号：US07420320B2

公开(公告)日：2008-09-02

申请号：US11946913

申请日：2007-11-29

Applicant: Kenya Sano ,  Ryoichi Ohara ,  Naoko Yanase ,  Takaaki Yasumoto ,  Kazuhiko Itaya ,  Takashi Kawakubo ,  Hiroshi Toyoda ,  Masahiko Hasunuma ,  Toshihiko Nagano ,  Kazuhide Abe ,  Michihiko Nishigaki ,  Hironobu Shibata

Inventor： Kenya Sano ,  Ryoichi Ohara ,  Naoko Yanase ,  Takaaki Yasumoto ,  Kazuhiko Itaya ,  Takashi Kawakubo ,  Hiroshi Toyoda ,  Masahiko Hasunuma ,  Toshihiko Nagano ,  Kazuhide Abe ,  Michihiko Nishigaki ,  Hironobu Shibata

IPC: H01H47/00 ,  H01H51/22 ,  H01L41/04

CPC classification number: H03H9/02015 ,  H01H2057/006 ,  H01L41/0477 ,  H01L41/094 ,  H01L41/316 ,  H01L41/319 ,  H03H3/02 ,  H03H9/02094 ,  H03H9/173 ,  H03H9/174 ,  H03H9/175 ,  H03H9/542 ,  H03H9/582 ,  H03H9/605 ,  H03H2003/021 ,  H03H2003/023 ,  H03H2003/025 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49005 ,  Y10T29/49117 ,  Y10T29/49155

Abstract: A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.

Abstract translation: 压电薄膜器件包括设置在衬底上的非晶金属膜和设置在非晶态金属上的压电膜。 压电膜的晶轴之一在垂直于非晶态金属表面的方向上排列。

公开(公告)号：US20080061399A1

公开(公告)日：2008-03-13

申请号：US11826331

申请日：2007-07-13

Applicant: Kazuhide Abe

Inventor： Kazuhide Abe

IPC: H01L29/00

CPC classification number: H01L27/11502 ,  H01L27/11507

Abstract: A semiconductor device according to the present invention includes a semiconductor substrate; a capacitor having a lower electrode formed on said semiconductor substrate, a capacity insulating film formed on said lower electrode, and an upper electrode formed on said capacity insulating film; contact holes formed on said upper electrode and said lower electrode; a barrier layer containing oxygen, formed inside said contact holes; and a conductive layer which fills said contact holes in which said barrier layer is formed on the inside.

Abstract translation: 根据本发明的半导体器件包括半导体衬底; 形成在所述半导体衬底上的下电极的电容器，形成在所述下电极上的电容绝缘膜和形成在所述电容绝缘膜上的上电极; 形成在所述上电极和所述下电极上的接触孔; 在所述接触孔内形成含有氧的阻挡层; 以及填充在内部形成有阻挡层的所述接触孔的导电层。

公开(公告)号：US20070278900A1

公开(公告)日：2007-12-06

申请号：US11781667

申请日：2007-07-23

Applicant: Takashi KAWAKUBO ,  Ryoichi Ohara ,  Tomio Ono ,  Toshihiko Nagano ,  Michihiko Nishigaki ,  Takaaki Yasumoto ,  Kazuhide Abe ,  Kenya Sano

Inventor： Takashi KAWAKUBO ,  Ryoichi Ohara ,  Tomio Ono ,  Toshihiko Nagano ,  Michihiko Nishigaki ,  Takaaki Yasumoto ,  Kazuhide Abe ,  Kenya Sano

IPC: H01L41/08

CPC classification number: H01G7/06 ,  H01H2057/006 ,  H01L41/0933 ,  H01L41/094

Abstract: A thin film piezoelectric actuator comprises a driving part at least one end of which is supported by an anchor portion. The driving part includes: a piezoelectric film, a first lower electrode provided under a first region of the piezoelectric film, a second lower electrode provided under a second region different from the first region of the piezoelectric film, a first upper electrode provided opposite to the first lower electrode on the piezoelectric film, a second upper electrode provided opposite to the second lower electrode on the piezoelectric film, a first connection part that electrically connects the first lower electrode and the second upper electrode via a first via hole formed in the piezoelectric film, and a second connection part that electrically connects the second lower electrode and the first upper electrode via a second via hole formed in the piezoelectric film.

Abstract translation: 薄膜压电致动器包括驱动部件，其至少一端由锚固部分支撑。 驱动部包括：压电膜，设置在压电膜的第一区域下方的第一下电极，设置在与压电膜的第一区不同的第二区域下方的第二下电极，与第一下电极相对设置的第一上电极 压电膜上的第一下电极，与压电膜上的第二下电极相对设置的第二上电极，经由形成在压电膜中的第一通孔电连接第一下电极和第二上电极的第一连接部 以及第二连接部，其经由形成在所述压电膜中的第二通路孔电连接所述第二下部电极和所述第一上部电极。

公开(公告)号：US20050242687A1

公开(公告)日：2005-11-03

申请号：US11115107

申请日：2005-04-27

Applicant: Takashi Kawakubo ,  Toshihiko Nagano ,  Kazuhide Abe ,  Michihiko Nishigaki

Inventor： Takashi Kawakubo ,  Toshihiko Nagano ,  Kazuhide Abe ,  Michihiko Nishigaki

IPC: B81B3/00 ,  H01G5/18 ,  H01G7/06 ,  H01H57/00 ,  H01H59/00 ,  H01L41/08 ,  H01L41/09 ,  H01L41/18 ,  H01L41/187 ,  H01L41/22 ,  H01L41/29 ,  H02N1/00 ,  H03H9/24

CPC classification number: H01H57/00 ,  B81B3/0021 ,  H01G5/16 ,  H01G5/18 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/0933 ,  H01L41/094

Abstract: A piezoelectric-driven MEMS device can be fabricated reliably and consistently. The piezoelectric-driven MEMS device includes: a movable flat beam having a piezoelectric film disposed above a substrate with a recessed portion such that the piezoelectric film is bridged over the recessed portion, piezoelectric drive mechanisms disposed at both ends of the piezoelectric film and configured to drive the piezoelectric film, and a first electrode disposed at the center of the substrate-side of the piezoelectric film, and a second electrode disposed on a flat part of the recessed portion of the substrate and facing the first electrode of the movable flat beam.

Abstract translation: 可以可靠且一致地制造压电驱动的MEMS器件。 压电驱动MEMS器件包括：可移动平板光束，其具有设置在具有凹部的基板上方的压电膜，使得压电膜桥接在凹部上，压电驱动机构设置在压电膜的两端并被配置为 驱动所述压电膜，以及设置在所述压电膜的基板侧的中心的第一电极，以及设置在所述基板的所述凹部的平坦部分上并且面对所述可动平坦梁的所述第一电极的第二电极。

公开(公告)号：US20050099236A1

公开(公告)日：2005-05-12

申请号：US10935264

申请日：2004-09-08

Applicant: Takashi Kawakubo ,  Kazuhide Abe ,  Mayumi Morizuka

Inventor： Takashi Kawakubo ,  Kazuhide Abe ,  Mayumi Morizuka

IPC: H03B5/30 ,  H03B5/32 ,  H03B5/36 ,  H03H9/02 ,  H03H9/05 ,  H03H9/17 ,  H03H9/00

CPC classification number: H03H9/173 ,  H03B5/326 ,  H03B5/366 ,  H03H9/0542 ,  H03H2009/02204 ,  Y10T29/42 ,  Y10T29/43 ,  Y10T29/49005 ,  Y10T29/49155

Abstract: The present invention provides a voltage controlled oscillator comprising an thin film BAW resonator and a variable capacitor element. The thin film BAW resonator includes an anchor section formed on a Si substrate, a lower electrode supported on the anchor section and positioned to face the Si substrate, a first piezoelectric film formed on the lower electrode, and an upper electrode formed on the first piezoelectric film. On the other hand, the variable capacitor element includes a stationary electrode formed on a Si substrate, an anchor section formed on the Si substrate, a first electrode supported on the anchor section and positioned to face the Si substrate, a second piezoelectric film formed on the first electrode, and a second electrode formed on the second piezoelectric film.

Abstract translation: 本发明提供一种包括薄膜BAW谐振器和可变电容器元件的压控振荡器。 薄膜BAW谐振器包括形成在Si衬底上的锚定部分，支撑在锚固部分上并定位成面对Si衬底的下电极，形成在下电极上的第一压电膜，以及形成在第一压电 电影。 另一方面，可变电容器元件包括形成在Si衬底上的固定电极，形成在Si衬底上的锚定部分，支撑在锚定部分上并且定位成面对Si衬底的第一电极，形成在第二压电膜上的第二压电膜 第一电极和形成在第二压电膜上的第二电极。

公开(公告)号：US06770560B2

公开(公告)日：2004-08-03

申请号：US10444986

申请日：2003-05-27

Applicant: Kazuhide Abe

Inventor： Kazuhide Abe

IPC: H01L2144

CPC classification number: H01L21/76843 ,  H01L21/76844 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a method of manufacturing a semiconductor device, a semiconductor substrate including an insulating layer is provided. A groove is formed on the insulating layer. An additive-containing barrier layer is formed on the insulating layer. A metal seed layer and a metal layer are formed on the barrier layer. Then, the metal layer is subjected to a first heat treatment at a first temperature that is capable of promoting grain growth of the metal seed layer and the metal layer. The barrier layer, the metal seed layer and the metal layer are partially removed so that a conductive layer including the metal seed layer and the metal layer is formed in the groove. Finally, the conductive layer is subjected to a second heat treatment at a second temperature that is higher than the first temperature and allows an additive element in the barrier layer to diffuse into the metal layer.

Abstract translation: 在制造半导体器件的方法中，提供了包括绝缘层的半导体衬底。 在绝缘层上形成凹槽。 在绝缘层上形成含添加剂的阻挡层。 在阻挡层上形成金属种子层和金属层。 然后，在能够促进金属种子层和金属层的晶粒生长的第一温度下对金属层进行第一次热处理。 部分去除阻挡层，金属种子层和金属层，使得在沟槽中形成包括金属籽晶层和金属层的导电层。 最后，在高于第一温度的第二温度下对导电层进行第二次热处理，并允许阻挡层中的添加元素扩散到金属层中。