公开(公告)号：US06663943B2

公开(公告)日：2003-12-16

申请号：US09884276

申请日：2001-06-19

申请人： Michio Kadota

发明人： Michio Kadota

IPC分类号： B32B300

CPC分类号： H03H9/1078 ,  B32B3/30 ,  H01L21/561 ,  H01L23/3135 ,  H01L24/97 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01051 ,  H01L2924/01055 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H03H9/0542 ,  H03H9/0585 ,  H03H9/059 ,  H03H9/1085 ,  Y10T428/1307 ,  Y10T428/24479 ,  Y10T428/24537 ,  Y10T428/24612 ,  Y10T428/24942 ,  Y10T428/24983 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A surface acoustic wave device includes a SAW element that is mounted on a substrate. Grooves are provided in the substrate at the outer periphery of the SAW element, and a flexible resin layer is provided at the inner portion of the grooves so as to cover the SAW element. An outer resin layer that is harder than the flexible resin layer is provided at the exterior of the flexible resin layer. This configuration facilitates reduction in size and profile of the surface acoustic wave device, contributes to reduction in cost, and exhibits high environmental resistance.

摘要翻译： 表面声波装置包括安装在基板上的SAW元件。 沟槽在SAW元件的外周设置在基板中，并且在凹槽的内部设置柔性树脂层以覆盖SAW元件。 在柔性树脂层的外部设置有比柔性树脂层更硬的外侧树脂层。 该构造有助于降低声表面波装置的尺寸和轮廓，有助于降低成本，并且表现出高的耐环境性。

公开(公告)号：US06587016B2

公开(公告)日：2003-07-01

申请号：US09836072

申请日：2001-04-17

申请人： Michio Kadota

发明人： Michio Kadota

IPC分类号： H03H964

CPC分类号： H03H9/64

摘要： A surface acoustic wave filter includes a piezoelectric substrate and first and second IDT provided thereon. The first IDT is formed on the surface of the piezoelectric substrate. The second IDT is formed on the surface of the piezoelectric substrate and positioned not in a straight line with the first IDT in the surface acoustic wave propagation direction. A first reflection edge is formed on the piezoelectric substrate, and positioned in a straight line with the first IDT in the surface acoustic wave propagation direction so that an SH type surface acoustic wave excited by the first IDT is input to the first reflection edge and is reflected therefrom at an angle to the input direction. A second reflection edge is formed on the piezoelectric substrate and positioned in a straight line with the second IDT in the surface acoustic wave propagation direction, so that the SH type surface acoustic wave reflected from the first reflection edge is input to the second reflection edge and is reflected therefrom at an angle to the input direction, toward the second IDT.

摘要翻译： 表面声波滤波器包括压电基片和设置在其上的第一和第二IDT。 第一IDT形成在压电基板的表面上。 第二IDT形成在压电基板的表面上，并且不位于具有第一IDT的声表面波传播方向上的直线上。 第一反射边缘形成在压电基板上，并且位于与第一IDT在声表面波传播方向上的直线上，使得由第一IDT激发的SH型表面声波被输入到第一反射边缘，并且是 以与输入方向成一定角度从其反射。 第二反射边缘形成在压电基板上，并且与第二IDT位于与弹性表面波传播方向成直线的一条直线上，从而将从第一反射边缘反射的SH型声表面波输入到第二反射边缘， 朝向第二IDT以与输入方向成一角度反射。

公开(公告)号：US06534895B2

公开(公告)日：2003-03-18

申请号：US09842330

申请日：2001-04-24

申请人： Michio Kadota ,  Toshinori Miura

发明人： Michio Kadota ,  Toshinori Miura

IPC分类号： H03H925

CPC分类号： H03H9/02574 ,  H03H9/176

摘要： A surface acoustic wave device includes a substrate and electrode disposed on the substrate. The electrode has a specific resistance &rgr; of up to about 1 &OHgr;·cm and is made of a ZnO film with a low resistance having an impurity doping. A piezoelectric film having a specific resistance &rgr; of at least about 106 &OHgr;·cm and a lattice constant within approximately ±20% of that of ZnO is disposed on the electrode. An interdigital electrode is disposed on the piezoelectric film.

摘要翻译： 表面声波装置包括基板和设置在基板上的电极。 该电极的电阻rho高达约1欧米法，由具有杂质掺杂的低电阻的ZnO膜制成。 在电极上设置具有至少约为106欧姆·厘米汞厘米的电阻率rho和在约±20％范围内的晶格常数的压电薄膜。 交叉电极设置在压电膜上。

公开(公告)号：US06448585B1

公开(公告)日：2002-09-10

申请号：US09499840

申请日：2000-02-07

申请人： Michio Kadota

发明人： Michio Kadota

IPC分类号： H01L3300

CPC分类号： H01L33/28 ,  C09K11/605 ,  H01L33/0087

摘要： A semiconductor luminescent element includes: a base substrate; a ZnO luminescent layer formed on the base substrate; and a ZnO buffer layer doped with an impurity and formed between the base substrate and the ZnO luminescent layer.

摘要翻译： 半导体发光元件包括：基底基板; 形成在所述基底基板上的ZnO发光层; 以及掺杂有杂质并形成在基底基板和ZnO发光层之间的ZnO缓冲层。

公开(公告)号：US06366002B1

公开(公告)日：2002-04-02

申请号：US09654113

申请日：2000-08-31

申请人： Michio Kadota

发明人： Michio Kadota

IPC分类号： H03H915

CPC分类号： H03H9/02559 ,  H03H9/14538

摘要： A surface acoustic wave device including a LiTaO3 substrate, and an interdigital transducer is provided on the LiTaO3 substrate. The interdigital transducer includes as a major component at least one of Au, Ag, Ta, Mo, Cu, Ni, Cr, Zn, and W, and the interdigital transducer has a normalized film thickness H/&lgr; of approximately 0.05 or less so as to excite a shear horizontal wave.

摘要翻译： 在LiTaO 3基板上设置包括LiTaO 3基板和叉指换能器的声表面波装置。 叉指换能器包括Au，Ag，Ta，Mo，Cu，Ni，Cr，Zn和W中的至少一种的主要成分，并且叉指换能器具有约0.05或更小的标准化膜厚度H / 激发剪切水平波。

公开(公告)号：US06326645B1

公开(公告)日：2001-12-04

申请号：US09385808

申请日：1999-08-30

申请人： Michio Kadota

发明人： Michio Kadota

IPC分类号： H01L2912

CPC分类号： H01L33/007 ,  H01S5/3201 ,  H01S5/32341 ,  H01S2301/173

摘要： A semiconductor photonic device has a Si substrate; a SiO2 film formed on the Si substrate; a ZnO film formed on the SiO2 film; and a semiconductor compound layer represented by InxGayAlzN (x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z≦1) formed on the ZnO film.

摘要翻译： 半导体光子器件具有Si衬底; 形成在Si衬底上的SiO 2膜; 形成在SiO 2膜上的ZnO膜; 以及在ZnO膜上形成的由In x Ga y Al z N（x + y + z = 1，0 <= x <= 1,0 <= y <= 1,0

公开(公告)号：US06291923B1

公开(公告)日：2001-09-18

申请号：US09221892

申请日：1998-12-28

申请人： Michio Kadota

发明人： Michio Kadota

IPC分类号： H01L4108

CPC分类号： H03H9/02551

摘要： A surface acoustic wave device includes a quartz substrate, a reflector disposed on the quartz substrate, a piezoelectric thin film disposed on a portion of the quartz substrate which excludes at least a portion of the quartz substrate on which the reflector is disposed, and an interdigital transducer disposed to contact the piezoelectric thin film.

摘要翻译： 表面声波装置包括石英基板，布置在石英基板上的反射器，设置在石英基板的一部分上的压电薄膜，排除了布置有反射器的石英基板的至少一部分和叉指 设置成与压电薄膜接触的传感器。

公开(公告)号：US5914554A

公开(公告)日：1999-06-22

申请号：US706303

申请日：1996-08-30

申请人： Michio Kadota ,  Junya Ago

发明人： Michio Kadota ,  Junya Ago

IPC分类号： H03H9/02 ,  H03H9/25 ,  H03H9/64 ,  H01L41/08

CPC分类号： H03H9/02669 ,  H03H9/6413

摘要： An end-face reflecting-type surface wave resonator using the SH-type surface wave achieves two types of resonance characteristics by use of only a single device. An interdigital transducer having a pair of comb-like electrodes are formed on a piezoelectric substrate having two oppositely-facing end faces. The interdigital transducer has two peaks of main lobes and are assigned with weights so that the two peaks of main lobes substantially coincide with frequency positions of attenuation poles disposed across a main lobe of a virtual normal-type interdigital transducer having the same number of pairs of electrodes as the weighted interdigital transducer. Thus, two types of resonance characteristics can be obtained.

摘要翻译： 使用SH型表面波的端面反射型表面波谐振器仅通过单个器件实现两种谐振特性。 具有一对梳状电极的叉指换能器形成在具有两个相对端面的压电基片上。 叉指式换能器具有主瓣的两个峰值并且被赋予权重，使得主瓣的两个峰值与设置在具有相同数量的对的虚拟正交型叉指式换能器的主瓣之间的衰减极的频率位置基本一致 电极作为加权叉指换能器。 因此，可以获得两种类型的谐振特性。

公开(公告)号：US5802685A

公开(公告)日：1998-09-08

申请号：US674248

申请日：1996-07-01

申请人： Michio Kadota ,  Naoki Mizoguchi

发明人： Michio Kadota ,  Naoki Mizoguchi

IPC分类号： H03H3/08 ,  H03H9/02 ,  H03H9/145 ,  H03H9/25 ,  H01L41/22

CPC分类号： H03H9/02984 ,  H03H3/08 ,  Y10T29/42

摘要： A method of manufacturing a surface wave device of an end-face reflection type comprising forming an IDT 12 on a piezoelectric plate 11, and cutting the piezoelectric plate 11 in a direction which is parallel to the outermost electrode fingers of the IDT within a target area which extends from the out edges of the outermost electrodes to a position .lambda./8 outwardly therefrom, .lambda. being the wavelength of the surface wave generated by the IDT, so as to form opposite end faces of the surface wave device.

摘要翻译： 一种制造端面反射型表面波器件的方法，包括在压电板11上形成IDT 12，并且在目标区域内沿与IDT的最外电极指的平行方向切割压电板11 其从最外面的电极的外边缘延伸到从其向外的位置λ/ 8，λ是由IDT产生的表面波的波长，从而形成表面波器件的相对的端面。

公开(公告)号：US5657152A

公开(公告)日：1997-08-12

申请号：US616528

申请日：1996-03-19

申请人： Michio Kadota

发明人： Michio Kadota

IPC分类号： G02F1/11 ,  G02F1/125 ,  G02F1/313 ,  G02F1/335 ,  G02F1/33 ,  G02F1/035

CPC分类号： G02F1/335 ,  G02F1/125

摘要： An acoustooptic device includes a Y-cut and Z-propagation LiNbO.sub.3 substrate or 128.degree.-rotating Y-plane LiNbO.sub.3 substrate, an optical waveguide layer which is formed on at least a part of the LiNbO.sub.3 substrate and has a higher light refractive index than the LiNbO.sub.3 substrate, an interdigital electrode which is formed on the LiNbO.sub.3 substrate and generates Rayleigh waves, and a dielectric thin film layer formed on the interdigital electrode.

摘要翻译： 声光装置包括Y切割和Z传播的LiNbO 3衬底或128°旋转的Y平面LiNbO 3衬底，光波导层形成在LiNbO 3衬底的至少一部分上并且具有比 LiNbO 3基板，形成在LiNbO 3基板上并产生瑞利波的交指电极，以及形成在叉指电极上的电介质薄膜层。