Process to open connection vias on a planarized surface
    71.
    发明申请
    Process to open connection vias on a planarized surface 有权
    在平坦化表面上打开连接通孔的过程

    公开(公告)号:US20070245557A1

    公开(公告)日:2007-10-25

    申请号:US11411555

    申请日:2006-04-25

    IPC分类号: H01K3/10

    摘要: A method for forming a via in an alumina protective layer on a structure such as a magnetic write head for use in perpendicular magnetic recording. A substrate such as an alumina fill layer, magnetic shaping layer, etc. is formed with region having a contact pad formed therein. A structure such as a magnetic pole, and or magnetic trailing shield, is formed over the substrate and is covered with a thick layer of alumina. The alumina can be applied by a high deposition rate process that does not form voids or seams in the alumina layer. The alumina layer can then be planarized by a chemical mechanical polishing process (CMP) and then a mask structure, such as a photoresist mask, is formed over the alumina layer. The mask structure is formed with an opening disposed over the contact pad. A reactive ion mill is then performed to remove portions of the alumina layer that are exposed at the opening in the mask, thereby forming a via in the alumina layer. The mask can then be lifted off and an electrically conductive material can be deposited into the via. Forming the via by a subtractive method rather than by a liftoff process allows the alumina to be deposited in a manner that does not result in voids. The use of reactive ion milling allows the via to be well defined and formed with substantially vertical side walls rather than in a conical or outward spreading fashion as would be formed by other material removal processes such as wet etching.

    摘要翻译: 在用于垂直磁记录的诸如磁写头的结构上的氧化铝保护层中形成通孔的方法。 在其中形成有形成有接触垫的区域形成诸如氧化铝填充层,磁性成形层等的基板。 诸如磁极和/或磁性后屏蔽的结构形成在衬底之上,并被厚层氧化铝覆盖。 可以通过在氧化铝层中不形成空隙或接缝的高沉积速率工艺来施加氧化铝。 然后可以通过化学机械抛光工艺(CMP)将氧化铝层平坦化,然后在氧化铝层上形成诸如光致抗蚀剂掩模的掩模结构。 掩模结构形成有设置在接触垫上方的开口。 然后执行反应离子研磨机以除去在掩模中的开口处暴露的部分氧化铝层,从而在氧化铝层中形成通孔。 然后可以将掩模剥离,并且可以将导电材料沉积到通孔中。 通过减法法而不是通过剥离工艺形成通孔允许以不会导致空隙的方式沉积氧化铝。 使用反应离子研磨允许通孔被良好地限定并且形成有基本垂直的侧壁,而不是以其它材料去除工艺(例如湿蚀刻)形成的锥形或向外扩展方式。

    Computational optical biopsy
    73.
    发明申请
    Computational optical biopsy 审中-公开
    计算光学活检

    公开(公告)号:US20070093700A1

    公开(公告)日:2007-04-26

    申请号:US11444282

    申请日:2006-05-31

    IPC分类号: A61B5/00

    CPC分类号: A61B5/0059

    摘要: Methods, systems and apparatuses for reconstructing a light source distribution or estimating a light source feature within a subject include an optical data receiving mechanism that is positionable at least at one location within the subject and is configured to acquire signal data from a light source located within a subject. A computational device is configured to receive signal data acquired by the optical data receiving mechanism and to reconstruct the light source distribution or to estimate a light source feature from at least a portion of the received data.

    摘要翻译: 用于重建光源分布或估计对象内的光源特征的方法,系统和装置包括光学数据接收机构,该光学数据接收机构至少可位于对象内的一个位置,并被配置为从位于所述对象内的光源获取信号数据 课程。 计算设备被配置为接收由光学数据接收机构获取的信号数据,并重建光源分布或者从至少一部分接收到的数据估计光源特征。

    Perpendicular head with self-aligned notching trailing shield process
    74.
    发明申请
    Perpendicular head with self-aligned notching trailing shield process 审中-公开
    垂直头具有自对准开槽后挡板工艺

    公开(公告)号:US20070035878A1

    公开(公告)日:2007-02-15

    申请号:US11201466

    申请日:2005-08-10

    IPC分类号: G11B5/127

    摘要: A perpendicular write head and a method of manufacturing the same is disclosed, the perpendicular write head for writing data onto tracks, the perpendicular write head having a main pole having notched trailing shield being self-aligned on the main pole for improved overwriting and adjacent track interference.

    摘要翻译: 公开了一种垂直写头及其制造方法,用于将数据写入轨道的垂直写头,垂直写头具有带切口的后屏蔽的主极在主极上自对准以改善重写和相邻轨迹 干扰。

    CMP for corrosion-free CoFe elements for magnetic heads
    75.
    发明授权
    CMP for corrosion-free CoFe elements for magnetic heads 有权
    CMP用于磁头的无腐蚀CoFe元件

    公开(公告)号:US07144518B2

    公开(公告)日:2006-12-05

    申请号:US10734361

    申请日:2003-12-11

    IPC分类号: B44C1/22

    摘要: A method of manufacture of magnetic heads which include CoFe elements using CMP is presented. The method includes providing a slurry of Al2O3, adjusting the concentration of H2O2 in said slurry to within a range of 6–12% by volume and balancing mechanical polishing action. The balancing is done by adjusting the table speed of a mechanical polisher to within a range of 55–90 rpm, and adjusting polishing pressure to within a range of 5–7 psi. Also a magnetic head having elements made of CoFe material made by this method is disclosed.

    摘要翻译: 提出了使用CMP制造包括CoFe元素的磁头的制造方法。 该方法包括提供Al 2 N 3 O 3的浆料,调节所述的二氧化钛的浓度 浆料在6-12体积%的范围内,并平衡机械抛光作用。 通过将机械抛光机的工作台速度调节到55-90rpm的范围内并且将抛光压力调节到5-7psi的范围内来进行平衡。 还公开了一种具有由该方法制成的由CoFe材料制成的元件的磁头。

    Manufacturing method for forming a write head top pole using chemical mechanical polishing with a DLC stop layer
    76.
    发明授权
    Manufacturing method for forming a write head top pole using chemical mechanical polishing with a DLC stop layer 失效
    使用具有DLC停止层的化学机械抛光形成写头顶极的制造方法

    公开(公告)号:US07081041B1

    公开(公告)日:2006-07-25

    申请号:US11067913

    申请日:2005-02-28

    IPC分类号: G11B5/127

    摘要: A method for forming a write head top pole using chemical mechanical polishing with a diamond-like-carbon (DLC) polishing stop layer is disclosed. The method for providing a top pole of a write head includes forming a P2 pole tip, depositing a P2 filling layer to a P2 target thickness, wherein the P2 filling layer around the P2 pole tip is filled to a P2 target thickness while the P2 filling layer creates a topography above the P2 pole tip, depositing a DLC polishing stop layer over the P2 target thickness filling layer, and chemically mechanically polishing (CMP) any topography above the stop layer-covered P2 target thickness filling layer to the stop layer using a selective slurry.

    摘要翻译: 公开了一种使用具有类金刚石(DLC)抛光停止层的化学机械抛光形成写头顶极的方法。 提供写头的顶极的方法包括形成P 2极端,将P 2填充层沉积到P 2靶的厚度,其中P 2极端周围的P 2填充层被填充到P 2 目标厚度,而P 2填充层在P 2极尖端上方形成一个形貌,在P 2目标厚度填充层上沉积DLC抛光停止层,并化学机械抛光(CMP)停留层覆盖的P 2上方的任何地形 使用选择性浆料将目标厚度填充层施加到停止层。

    METHODOLOGY OF CHEMICAL MECHANICAL NANOGRINDING FOR ULTRA PRECISION FINISHING OF WORKPIECES
    77.
    发明申请
    METHODOLOGY OF CHEMICAL MECHANICAL NANOGRINDING FOR ULTRA PRECISION FINISHING OF WORKPIECES 失效
    化学机械纳米技术超声波精密加工工艺的方法

    公开(公告)号:US20060151436A2

    公开(公告)日:2006-07-13

    申请号:US10903833

    申请日:2004-07-30

    IPC分类号: C03C15/00

    摘要: Abstract of the DisclosureA chemical-mechanical nanogrinding process achieves near-zero pole tip recession (PTR) to minimize magnetic space loss of the head transducer to media spacing loss, alumina recession trailing edge profile variation, and smooth surface finish with minimal smearing across multi-layers of thin films and the hard substrate to meet the requirements of high areal density head. With a fine chemical mechanical nanogrinding process, PTR can be improved to a mean of about less than 1.0 nm.

    摘要翻译: 公开的摘要化学机械纳米研磨工艺实现接近零极尖端退缩(PTR),以最小化头部换能器的磁空间损失,使介质间隔损耗,氧化铝凹陷后缘轮廓变化和光滑表面光洁度,同时具有最小的多重拖尾 - 薄膜层和硬质基材,以满足高密度面的要求。 通过精细的化学机械纳米研磨工艺,PTR可以提高到大约小于1.0nm的平均值。

    Process of fabricating write pole in magnetic recording head using rhodium CMP stop layer
    78.
    发明授权
    Process of fabricating write pole in magnetic recording head using rhodium CMP stop layer 失效
    使用铑CMP停止层在磁记录头中制造写柱的过程

    公开(公告)号:US07029376B1

    公开(公告)日:2006-04-18

    申请号:US11225907

    申请日:2005-09-14

    IPC分类号: G11B5/127

    摘要: In the formation of the top magnetic write pole in a thin film magnetic recording head, a CMP stop layer comprising rhodium is deposited over the Al2O3 layer that overlies the top magnetic pole. A mixture of silicon dioxide, ammonium persulfate and benzotriazole is employed as a slurry in the CMP process that removes the portion of the Al2O3 layer covering the top magnetic pole. This eliminates the need for an extra thick layer of Al2O3 to be first deposited over the top pole and then removed to expose the top pole. The magnetic layer that forms the top pole can be plated to the target thickness of the top pole. As a result, the thickness of the photoresist layer that is used to define the size and shape of the top pole can be decreased to a desirable thickness, facilitating the use of DUV radiation to expose the photoresist layer.

    摘要翻译: 在薄膜磁记录头中形成顶磁写磁极时,包含铑的CMP停止层沉积在覆盖顶部的Al 2 O 3层上 磁极。 在CMP工艺中使用二氧化硅,过硫酸铵和苯并三唑的混合物作为浆料,其除去覆盖顶部磁极的部分Al 2 O 3 N 3层。 这样就不需要首先沉积在顶极上的另外一层较厚的Al 2 O 3 3 3层,然后去除以暴露顶极。 可以将形成顶极的磁性层电镀到顶极的目标厚度。 结果,用于限定顶极的尺寸和形状的光致抗蚀剂层的厚度可以减小到期望的厚度,便于使用DUV辐射来曝光光致抗蚀剂层。

    Chemical mechanical polishing process for 2.45T CoFeNi structures of thin film magnetic heads
    79.
    发明申请
    Chemical mechanical polishing process for 2.45T CoFeNi structures of thin film magnetic heads 失效
    2.45T CoFeNi薄膜磁头结构的化学机械抛光工艺

    公开(公告)号:US20060042173A1

    公开(公告)日:2006-03-02

    申请号:US10931846

    申请日:2004-08-31

    IPC分类号: B24D3/02 B24B7/30 C09C1/68

    CPC分类号: C09K3/1463 C09G1/02

    摘要: The present invention is directed to methods for polishing and cleaning a wafer having CoFeNi structures within alumina fill to achieve corrosion-free, smooth, and planar surface. A preferred chemical mechanical polishing (CMP) method includes a CMP polishing compound including alumina abrasive particulates, 1H-Benzotriazole (BTA), and hydrogen peroxide (H2O2) in a concentration working range of 4% to 12%. In a preferred embodiment the H2O2 concentration is approximately 6% and the pH is approximately 4.0 at polishing pressure 6 psi. A cleaning solution for CoFeNi structures in alumina fill of the present invention preferably includes 4-Methyl-1H-Benzotriazole, 5-Methyl-1H-Benzotriazole, hydrogenated 4-Methyl-1H-Benzotriazole, hydrogenated 5-Methyl-1H-Benzotriazole, sodium octanoate, and water.

    摘要翻译: 本发明涉及在氧化铝填充物内抛光和清洗具有CoFeNi结构的晶片以实现无腐蚀,平滑和平坦的表面的方法。 优选的化学机械抛光(CMP)方法包括CMP抛光化合物,其包括氧化铝磨料颗粒,1H-苯并三唑(BTA)和过氧化氢(H 2 O 2 O 2) 浓度范围为4%〜12%。 在优选的实施方案中,在抛光压力6psi下,H 2 O 2 O 2浓度为约6%,pH为约4.0。 本发明的氧化铝填充物中的CoFeNi结构的清洗液优选包括4-甲基-1H-苯并三唑,5-甲基-1H-苯并三唑,氢化的4-甲基-1H-苯并三唑,氢化的5-甲基-1H-苯并三唑,钠 辛酸盐和水。