公开(公告)号：US20200266795A1

公开(公告)日：2020-08-20

申请号：US16449561

申请日：2019-06-24

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung LEE ,  Je Hong KYOUNG ,  Sung Sun KIM ,  Jin Suk SON ,  Ran Hee SHIN ,  Hwa Sun LEE

IPC: H03H9/02 ,  H03H9/17

Abstract: A bulk-acoustic wave resonator comprises a substrate, a resonant portion comprising a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on the substrate, and further comprising a center portion and an extension portion that is disposed along a periphery of the center portion, and an insertion layer that is disposed in the extension portion between the first electrode and the piezoelectric layer, and the insertion layer is formed of an aluminum alloy containing scandium (Sc).

公开(公告)号：US20200186125A1

公开(公告)日：2020-06-11

申请号：US16411273

申请日：2019-05-14

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung LEE ,  Yoon Sok PARK ,  Dae Hun JEONG

IPC: H03H9/54 ,  H03H9/02 ,  H03H9/205

Abstract: A bulk-acoustic wave resonator includes: a first substrate formed of a first material; an insulating layer or a piezoelectric layer disposed on a first side of the first substrate; and a second substrate formed of a second material and disposed on a second side of the first substrate, wherein the second material has thermal conductivity that is higher than a thermal conductivity of the first material.

公开(公告)号：US20190386641A1

公开(公告)日：2019-12-19

申请号：US16190573

申请日：2018-11-14

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung LEE ,  Tae Yoon KIM ,  Jong Woon KIM ,  Moon Chul LEE ,  Yong Jin KANG ,  Nam Jung LEE

IPC: H03H9/17 ,  H03H9/58 ,  H03H9/13 ,  H03H3/02

Abstract: An acoustic resonator includes a substrate, and a resonant portion comprising a center portion in which a first electrode, a piezoelectric layer and a second electrode are sequentially laminated on the substrate, and an extending portion disposed along a periphery of the center portion, wherein the resonant portion is configured to have an asymmetrical polygonal plane, an insertion layer is disposed below the piezoelectric layer in the extending portion, and the piezoelectric layer is configured to have a top surface which is raised to conform to a shape of the insertion layer, and the insertion layer is configured to have an asymmetrical polygonal shape corresponding to a shape of the extending portion.

公开(公告)号：US20190356301A1

公开(公告)日：2019-11-21

申请号：US16196453

申请日：2018-11-20

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Sang Kee YOON ,  Nam Soo PARK ,  Hyung Jae PARK ,  Tae Kyung LEE ,  Moon Chul LEE

IPC: H03H9/17 ,  H01L21/3213

Abstract: A method of manufacturing a bulk acoustic wave resonator includes: forming a sacrificial layer on a substrate protection layer; forming a membrane layer on the substrate protection layer to cover the sacrificial layer; and forming a cavity by removing the sacrificial layer using a gas mixture comprising a halide-based gas and an oxygen-containing gas, wherein a mixture ratio of the halide-based gas to the oxygen-containing gas in the gas mixture is in a range from 1.5 to 2.4.

公开(公告)号：US20190013792A1

公开(公告)日：2019-01-10

申请号：US15972694

申请日：2018-05-07

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung LEE ,  Sung Sun KIM ,  Sang Kee YOON ,  Chang Hyun LIM ,  Jin Suk SON ,  Ran Hee SHIN ,  Je Hong KYOUNG

IPC: H03H9/17 ,  H03H9/13 ,  H03H3/02 ,  H01L41/047 ,  H01L41/314 ,  H01L41/29

Abstract: An acoustic resonator includes a substrate, a center portion, an extending portion, and a barrier layer. A first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate in the central portion. The extending portion is configured to extend from the center portion, and includes an insertion layer disposed below the piezoelectric layer. The barrier layer is disposed between the first electrode and the piezoelectric layer.

公开(公告)号：US20180278232A1

公开(公告)日：2018-09-27

申请号：US15992606

申请日：2018-05-30

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung LEE ,  Sung HAN ,  Hwa Sun LEE ,  Seung Joo SHIN ,  Ran Hee SHIN

IPC: H03H9/13 ,  H03H9/02 ,  H03H9/17 ,  H03H9/54

CPC classification number: H03H9/13 ,  H03H9/02149 ,  H03H9/173 ,  H03H9/54

Abstract: A bulk acoustic wave resonator includes a substrate, a first electrode and a second electrode disposed on the substrate, and a piezoelectric layer disposed between the first electrode and the second electrode. At least one of the first electrode and the second electrode includes an alloy of molybdenum and tantalum.

公开(公告)号：US20180262180A1

公开(公告)日：2018-09-13

申请号：US15808662

申请日：2017-11-09

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung LEE ,  Jin Suk SON ,  Sung Sun KIM ,  Je Hong KYOUNG ,  Hwa Sun LEE ,  Ran Hee SHIN

IPC: H03H9/17 ,  H01L41/16 ,  H01L41/18 ,  H01L41/29 ,  H01L41/39

CPC classification number: H03H9/17 ,  H01L41/16 ,  H01L41/183 ,  H01L41/187 ,  H01L41/29 ,  H01L41/39 ,  H03H3/02 ,  H03H9/02015 ,  H03H9/173 ,  H03H2003/021

Abstract: A film bulk acoustic resonator includes: a first electrode disposed on a substrate; a piezoelectric body disposed on the first electrode and including AlN to which a dopant is added; and a second electrode disposed on the piezoelectric body and facing the first electrode such that the piezoelectric body is interposed between the second electrode and the first electrode, wherein the dopant includes either one of 0.1 to 24 at % of Ta and 0.1 to 23 at % of Nb.

公开(公告)号：US20180183407A1

公开(公告)日：2018-06-28

申请号：US15795337

申请日：2017-10-27

Applicant: Samsung Electro-Mechanics Co., LTD.

Inventor： Tae Kyung LEE ,  Je Hong KYOUNG ,  Jin Suk SON ,  Hwa Sun LEE ,  Ran Hee SHIN

IPC: H03H9/54 ,  H03H9/17

CPC classification number: H03H9/54 ,  H03H3/02 ,  H03H9/02086 ,  H03H9/13 ,  H03H9/171 ,  H03H9/173 ,  H03H2003/021

Abstract: A bulk acoustic wave resonator includes a substrate; and a resonator including a first electrode, a piezoelectric layer, and a second electrode sequentially disposed on the substrate. Either one or both of the first electrode and the second electrode includes an alloy of molybdenum (Mo) and tantalum (Ta).

公开(公告)号：US20180083597A1

公开(公告)日：2018-03-22

申请号：US15459756

申请日：2017-03-15

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Sung HAN ,  Tae Kyung LEE ,  Sung Sun KIM ,  Won HAN ,  Hwa Sun LEE ,  Seung Joo SHIN

IPC: H03H9/17 ,  H03H9/54

CPC classification number: H03H9/17 ,  H03H9/02118 ,  H03H9/02157 ,  H03H9/173 ,  H03H9/547

Abstract: An acoustic wave resonator includes: a first piezoelectric portion of a piezoelectric layer, disposed on a cavity and having a first average thickness; and a second piezoelectric portion of the piezoelectric layer, disposed adjacent to an edge of the first piezoelectric portion and having a second average thickness that is different from the first average thickness.

公开(公告)号：US20180041189A1

公开(公告)日：2018-02-08

申请号：US15392068

申请日：2016-12-28

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung LEE ,  In Young KANG ,  Ran Hee SHIN ,  Jin Suk SON

IPC: H03H9/17 ,  H03H3/02 ,  H03H9/54

CPC classification number: H03H9/171 ,  H03H3/02 ,  H03H9/02015 ,  H03H9/173 ,  H03H9/54

Abstract: A bulk acoustic resonator includes a substrate, a first electrode disposed above the substrate, a piezoelectric body disposed on the first electrode and including a plurality of piezoelectric layers each including aluminum nitride with a doping material, and a second electrode disposed on the piezoelectric body, where at least one of the piezoelectric layers is a compressive piezoelectric layer formed under compressive stress.