Devices including a gas barrier layer
    75.
    发明授权
    Devices including a gas barrier layer 有权
    装置包括阻气层

    公开(公告)号:US09412402B2

    公开(公告)日:2016-08-09

    申请号:US14879107

    申请日:2015-10-09

    Abstract: Devices that include a near field transducer (NFT); a gas barrier layer positioned on at least a portion of the NFT; and a wear resistance layer positioned on at least a portion of the gas barrier layer wherein the gas barrier layer includes tantalum oxide (TaO), titanium oxide (TiO), chromium oxide (CrO), silicon oxide (SiO), aluminum oxide (AlO), titanium oxide (TiO), zirconium oxide (ZrO), yttrium oxide (YO), magnesium oxide (MgO), beryllium oxide (BeO), niobium oxide (NbO), hafnium oxide (HfO), vanadium oxide (VO), strontium oxide (SrO), or combinations thereof; silicon nitride (SiN), aluminum nitride (Al), boron nitride (BN), titanium nitride (TiN), zirconium nitride (ZrN), niobioum nitride (NbN), hafnium nitride (HfN), chromium nitride (CrN), or combinations thereof; silicon carbide (SiC), titanium carbide (TiC), zirconium carbide (ZrC), niobioum carbide (NbC), chromium carbide (CrC), vanadium carbide (VC), boron carbide (BC), or combinations thereof; or combinations thereof.

    Abstract translation: 包括近场传感器(NFT)的设备; 位于所述NFT的至少一部分上的阻气层; 以及位于所述阻气层的至少一部分上的耐磨层,其中所述阻气层包括氧化钽(TaO),氧化钛(TiO),氧化铬(CrO),氧化硅(SiO),氧化铝(AlO ),氧化钛(TiO),氧化锆(ZrO),氧化钇(YO),氧化镁(MgO),氧化铍(BeO),氧化铌(NbO),氧化铪(HfO),氧化钒(VO) 氧化锶(SrO)或其组合; 氮化硅(SiN),氮化铝(Al),氮化硼(BN),氮化钛(TiN),氮化锆(ZrN),氮化硼(NbN),氮化铪(HfN),氮化铬(CrN) 的; 碳化硅(SiC),碳化钛(TiC),碳化锆(ZrC),碳化铌(NbC),碳化铬(CrC),碳化钒(VC),碳化硼(BC) 或其组合。

    DEVICES INCLUDING AT LEAST ONE INTERMIXING LAYER
    77.
    发明申请
    DEVICES INCLUDING AT LEAST ONE INTERMIXING LAYER 审中-公开
    设备包括至少一个内嵌层

    公开(公告)号:US20150179194A1

    公开(公告)日:2015-06-25

    申请号:US14632054

    申请日:2015-02-26

    Abstract: Devices that include a near field transducer (NFT), the NFT including a peg having five surfaces, the peg including a first material, the first material including gold (Au), silver (Ag), aluminum (Al), copper (Cu), ruthenium (Ru), rhodium (Rh), iridium (Ir), or combinations thereof; an overlying structure; and at least one intermixing layer, positioned between the peg and the overlying structure, the at least one intermixing layer positioned on at least one of the five surfaces of the peg, the intermixing layer including at least the first material and a second material.

    Abstract translation: 包括近场换能器(NFT)的装置,所述NFT包括具有五个表面的钉,所述钉包括第一材料,所述第一材料包括金(Au),银(Ag),铝(Al),铜(Cu) ,钌(Ru),铑(Rh),铱(Ir)或其组合; 上层结构; 以及位于所述栓钉和所述上覆结构之间的至少一个混合层,所述至少一个混合层定位在所述栓钉的五个表面中的至少一个上,所述混合层至少包括所述第一材料和第二材料。

    Devices including a gas barrier layer
    78.
    发明授权
    Devices including a gas barrier layer 有权
    装置包括阻气层

    公开(公告)号:US09058824B2

    公开(公告)日:2015-06-16

    申请号:US14313611

    申请日:2014-06-24

    Abstract: Devices that include a near field transducer (NFT); a gas barrier layer positioned on at least a portion of the NFT; and a wear resistance layer positioned on at least a portion of the gas barrier layer wherein the gas barrier layer includes tantalum oxide (TaO), titanium oxide (TiO), chromium oxide (CrO), silicon oxide (SiO), aluminum oxide (AlO), titanium oxide (TiO), zirconium oxide (ZrO), yttrium oxide (YO), magnesium oxide (MgO), beryllium oxide (BeO), niobium oxide (NbO), hafnium oxide (HfO), vanadium oxide (VO), strontium oxide (SrO), or combinations thereof; silicon nitride (SiN), aluminum nitride (Al), boron nitride (BN), titanium nitride (TiN), zirconium nitride (ZrN), niobioum nitride (NbN), hafnium nitride (HfN), chromium nitride (CrN), or combinations thereof silicon carbide (SiC), titanium carbide (TiC), zirconium carbide (ZrC), niobioum carbide (NbC), chromium carbide (CrC), vanadium carbide (VC), boron carbide (BC), or combinations thereof or combinations thereof.

    Abstract translation: 包括近场传感器(NFT)的设备; 位于所述NFT的至少一部分上的阻气层; 以及位于所述阻气层的至少一部分上的耐磨层,其中所述阻气层包括氧化钽(TaO),氧化钛(TiO),氧化铬(CrO),氧化硅(SiO),氧化铝(AlO ),氧化钛(TiO),氧化锆(ZrO),氧化钇(YO),氧化镁(MgO),氧化铍(BeO),氧化铌(NbO),氧化铪(HfO),氧化钒(VO) 氧化锶(SrO)或其组合; 氮化硅(SiN),氮化铝(Al),氮化硼(BN),氮化钛(TiN),氮化锆(ZrN),氮化硼(NbN),氮化铪(HfN),氮化铬(CrN) 碳化硅(SiC),碳化钛(TiC),碳化锆(ZrC),碳化铌(NbC),碳化铬(CrC),碳化钒(VC),碳化硼(BC)或其组合或其组合。

    SUBMOUNT LAYERS CONFIGURED TO ENHANCE ABSORPTION OF LIGHT PROXIMATE A BONDING FEATURE
    80.
    发明申请
    SUBMOUNT LAYERS CONFIGURED TO ENHANCE ABSORPTION OF LIGHT PROXIMATE A BONDING FEATURE 有权
    配置的增强层可以吸收轻微的接合特征

    公开(公告)号:US20150003220A1

    公开(公告)日:2015-01-01

    申请号:US13930350

    申请日:2013-06-28

    CPC classification number: G11B5/6088 G11B5/314 G11B2005/0021

    Abstract: An apparatus includes a submount having a mounting surface and a top surface opposite the mounting surface. A slider has a bonding feature that interfaces with the mounting surface of the submount, and two or more layers are disposed between the mounting surface of the submount and the bonding feature. The two or more layers are configured to enhance light absorption of light in proximity to the bonding feature. The light originates from a source of electromagnetic energy that illuminates the top surface of the submount.

    Abstract translation: 一种装置包括具有安装表面和与安装表面相对的顶表面的基座。 滑块具有与基座的安装表面相接合的接合特征,并且两个或多个层设置在基座的安装表面和接合特征之间。 两层或更多层被配置为增强靠近粘合特征的光的光吸收。 光源源自照明底座顶表面的电磁能。

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