摘要:
A diamond film formation method includes forming, in a composite of a metal material and a semiconductor material, diamond nuclei on a surface of the metal material at a temperature below 650° C. in a first mixed gas containing at least carbon and hydrogen, and growing the diamond nuclei formed in the composite at a temperature below 750° C. in a second mixed gas containing at least carbon and hydrogen to form a diamond film.
摘要:
In the growth of carbon nanotubes, the aggregation of catalytic fine particles therefor is a problem. In order to realize the growth of carbon nanotubes into a high density, the carbon nanotube growing process includes a first plasma treatment step of treating a surface having catalytic fine particles with a plasma species generated from a gas which contains at least hydrogen or a rare gas without carbon element, a second plasma treatment step of forming a carbon layer on the surface of the catalytic fine particles by a plasma generated from a gas which contains at least a hydrocarbon after the first plasma treatment step, and a carbon nanotube growing step of growing carbon nanotubes by use of a plasma generated from a gas which contains at least a hydrocarbon after the second plasma treatment step.
摘要:
A discharge lamp encompassing a sealed-off tube filled with a discharge gas and a discharge electrode provided in the sealed-off tube. The discharge electrode embraces a supporting base and an electron-emitting layer formed of a wide bandgap semiconductor and provided on the supporting base, implemented by a plurality of protrusions, at least part of surfaces of the protrusions are unseen from a perpendicular direction to thereof above a top surface of the electron-emitting layer, dangling bonds of the wide bandgap semiconductor at the surfaces are terminated with hydrogen atoms.
摘要:
A thermal-electron source includes a substrate; and a thermionic cathode having conductivity, and being provided on the substrate, and including a plurality of microscopic pores on a surface of the thermionic cathode.
摘要:
A discharge electrode emitting electrons into a discharge gas, encompasses an emitter and current supply terminals configured to supply electric current to the emitter. The emitter embraces a wide bandgap semiconductor having at 300 K a bandgap of 2.2 eV or wider. Acceptor impurity atoms and donor impurity atoms being doped in the wide bandgap semiconductor, the activation energy of the donor impurity atoms being larger than the activation energy of the acceptor impurity atoms.
摘要:
A semiconductor light-emitting device includes: a first semiconductor layer; a light-emitting layer being disposed on the first semiconductor layer; a second semiconductor layer being disposed on the light-emitting layer, and metal electrodes connected to the first semiconductor layer and the second semiconductor layer. The light-emitting layer is lower in refractive index than the first semiconductor layer. The second semiconductor layer is lower in refractive index than the light-emitting layer. The metal electrodes supply a current to the light-emitting layer.
摘要:
A discharge light emitting device includes a container formed from insulating diamond and accommodating a discharge space therein, a material for discharge sealed in the discharge vessel, and an electrode pair formed from a conductive diamond and provided to apply voltage to the material for discharge.
摘要:
The present invention provides a nitride semiconductor laser by which stable high power room-temperature continuous-wave oscillation in fundamental mode is possible. A semiconductor laser diode comprising: a GaN layer; a first conductive type nitride semiconductor layer formed on said GaN layer and made of AlxGa1-xN(0.04≦x≦0.08); a first conductive type clad layer formed on said first conductive type nitride semiconductor layer and made of nitride semiconductor; a core area formed on said first conductive type clad layer and made of nitride semiconductor, said core area including an active layer to emit light by electric current injection; and a second conductive type clad layer formed on said core area and made of nitride semiconductor.
摘要翻译:本发明提供一种氮化物半导体激光器,通过该氮化物半导体激光器可以实现基模的稳定的高功率室温连续波振荡。 一种半导体激光二极管,包括:GaN层; 形成在所述GaN层上并由Al x Ga 1-x N(0.04 <= x <= 0.08)制成的第一导电型氮化物半导体层; 形成在所述第一导电型氮化物半导体层上并由氮化物半导体制成的第一导电型覆盖层; 形成在所述第一导电型覆盖层上并由氮化物半导体构成的芯区,所述芯区包括通过电流注入发光的有源层; 以及形成在所述芯区域上并由氮化物半导体制成的第二导电型覆盖层。
摘要:
A discharge lamp, in which diamond high in secondary electron emission efficiency and low in sputtering ratio is used as a cold cathode, includes an outer envelope filled with a discharge gas, a fluorescent film provided on an inner surface of the outer envelope, and a pair of electrodes which cause discharge to occur within the outer envelope. A diamond member is provided on a surface of each electrode, and oxygen is contained in the discharge gas at a ratio not less than 0.002% and not more than 12.5%.
摘要:
The present invention facilitates a supply of ink with a structural components at relatively low costs. It is performed by shifting a printing head having ink ejecting portion and sub tank portion into a state of reduced pressure. That is, draining ink from the sub tank portion to the outside and supplying ink from an ink storage container to the sub ink portion are performed by a reduced pressure in the printing head. Also, a carriage on which the printing head can be mounted shifts its position, and a plurality of ink receiving portions communicated with a plurality of their relative sub ink tank and a plurality of ink supplying portions communicated with a plurality of their relative main ink tanks are arranged in a predetermined manner. That is, the plurality of sub ink tanks and a plurality of main ink tanks are communicated together on a pair basis.