CARBON NANOTUBE GROWING PROCESS, AND CARBON NANOTUBE BUNDLE FORMED SUBSTRATE
    72.
    发明申请
    CARBON NANOTUBE GROWING PROCESS, AND CARBON NANOTUBE BUNDLE FORMED SUBSTRATE 有权
    碳纳米管生长工艺和碳纳米管组成基材

    公开(公告)号:US20100209704A1

    公开(公告)日:2010-08-19

    申请号:US12689515

    申请日:2010-01-19

    IPC分类号: B32B27/02 C23C4/04

    摘要: In the growth of carbon nanotubes, the aggregation of catalytic fine particles therefor is a problem. In order to realize the growth of carbon nanotubes into a high density, the carbon nanotube growing process includes a first plasma treatment step of treating a surface having catalytic fine particles with a plasma species generated from a gas which contains at least hydrogen or a rare gas without carbon element, a second plasma treatment step of forming a carbon layer on the surface of the catalytic fine particles by a plasma generated from a gas which contains at least a hydrocarbon after the first plasma treatment step, and a carbon nanotube growing step of growing carbon nanotubes by use of a plasma generated from a gas which contains at least a hydrocarbon after the second plasma treatment step.

    摘要翻译: 在碳纳米管的生长中,催化微粒的聚集是一个问题。 为了实现高密度碳纳米管的生长,碳纳米管生长工艺包括:第一等离子体处理步骤,用从至少包含氢气或稀有气体的气体产生的等离子体物质处理具有催化微粒子的表面 没有碳元素的第二等离子体处理步骤,通过在第一等离子体处理步骤之后由至少含有烃的气体产生的等离子体在催化微粒表面上形成碳层的第二等离子体处理步骤和生长 使用在第二等离子体处理步骤之后由至少含有烃的气体产生的等离子体生成碳纳米管。

    THERMAL-ELECTRON SOURCE
    74.
    发明申请
    THERMAL-ELECTRON SOURCE 审中-公开
    热电源

    公开(公告)号:US20080203885A1

    公开(公告)日:2008-08-28

    申请号:US11851095

    申请日:2007-09-06

    IPC分类号: H01J1/16

    CPC分类号: H01J1/16

    摘要: A thermal-electron source includes a substrate; and a thermionic cathode having conductivity, and being provided on the substrate, and including a plurality of microscopic pores on a surface of the thermionic cathode.

    摘要翻译: 热电子源包括基板; 和具有导电性的热离子阴极,并且设置在基板上,并且在热离子阴极的表面上包括多个微孔。

    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCING METHOD FOR THE SAME
    76.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCING METHOD FOR THE SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号:US20070114539A1

    公开(公告)日:2007-05-24

    申请号:US11531577

    申请日:2006-09-13

    IPC分类号: H01L33/00

    摘要: A semiconductor light-emitting device includes: a first semiconductor layer; a light-emitting layer being disposed on the first semiconductor layer; a second semiconductor layer being disposed on the light-emitting layer, and metal electrodes connected to the first semiconductor layer and the second semiconductor layer. The light-emitting layer is lower in refractive index than the first semiconductor layer. The second semiconductor layer is lower in refractive index than the light-emitting layer. The metal electrodes supply a current to the light-emitting layer.

    摘要翻译: 一种半导体发光器件包括:第一半导体层; 发光层设置在所述第一半导体层上; 设置在发光层上的第二半导体层和连接到第一半导体层和第二半导体层的金属电极。 发光层的折射率低于第一半导体层。 第二半导体层的折射率低于发光层。 金属电极向发光层提供电流。

    Semiconductor laser diode
    78.
    发明授权
    Semiconductor laser diode 有权
    半导体激光二极管

    公开(公告)号:US06873634B2

    公开(公告)日:2005-03-29

    申请号:US09964463

    申请日:2001-09-28

    摘要: The present invention provides a nitride semiconductor laser by which stable high power room-temperature continuous-wave oscillation in fundamental mode is possible. A semiconductor laser diode comprising: a GaN layer; a first conductive type nitride semiconductor layer formed on said GaN layer and made of AlxGa1-xN(0.04≦x≦0.08); a first conductive type clad layer formed on said first conductive type nitride semiconductor layer and made of nitride semiconductor; a core area formed on said first conductive type clad layer and made of nitride semiconductor, said core area including an active layer to emit light by electric current injection; and a second conductive type clad layer formed on said core area and made of nitride semiconductor.

    摘要翻译: 本发明提供一种氮化物半导体激光器,通过该氮化物半导体激光器可以实现基模的稳定的高功率室温连续波振荡。 一种半导体激光二极管,包括:GaN层; 形成在所述GaN层上并由Al x Ga 1-x N(0.04 <= x <= 0.08)制成的第一导电型氮化物半导体层; 形成在所述第一导电型氮化物半导体层上并由氮化物半导体制成的第一导电型覆盖层; 形成在所述第一导电型覆盖层上并由氮化物半导体构成的芯区,所述芯区包括通过电流注入发光的有源层; 以及形成在所述芯区域上并由氮化物半导体制成的第二导电型覆盖层。

    Ink-transport system, ink-replacement method, ink-jet printing apparatus, and ink-supply system
    80.
    发明授权
    Ink-transport system, ink-replacement method, ink-jet printing apparatus, and ink-supply system 失效
    墨水输送系统,墨水更换方法,喷墨打印装置和供墨系统

    公开(公告)号:US06536885B2

    公开(公告)日:2003-03-25

    申请号:US09774695

    申请日:2001-02-01

    IPC分类号: B41J2175

    摘要: The present invention facilitates a supply of ink with a structural components at relatively low costs. It is performed by shifting a printing head having ink ejecting portion and sub tank portion into a state of reduced pressure. That is, draining ink from the sub tank portion to the outside and supplying ink from an ink storage container to the sub ink portion are performed by a reduced pressure in the printing head. Also, a carriage on which the printing head can be mounted shifts its position, and a plurality of ink receiving portions communicated with a plurality of their relative sub ink tank and a plurality of ink supplying portions communicated with a plurality of their relative main ink tanks are arranged in a predetermined manner. That is, the plurality of sub ink tanks and a plurality of main ink tanks are communicated together on a pair basis.

    摘要翻译: 本发明有助于以相对低的成本提供具有结构部件的油墨。 通过将具有喷墨部分和副墨盒部分的打印头移动到减压状态来进行。 也就是说,将油墨从副罐部分排出到外部,并且通过减少打印头中的压力来执行从墨水储存容器向副墨水部分供墨。 此外,可以安装打印头的托架移动其位置,并且多个墨接收部分与多个相对副墨槽连通,并且多个供墨部分与多个相对主墨罐连通 以预定的方式排列。 也就是说,多个副墨水盒和多个主墨水盒成对地连通在一起。