公开(公告)号：US07033949B2

公开(公告)日：2006-04-25

申请号：US10748558

申请日：2003-12-29

申请人： Wen-How Lan ,  Kuang-Neng Yang ,  Lung-Chien Chen ,  Fen-Ren Chien

发明人： Wen-How Lan ,  Kuang-Neng Yang ,  Lung-Chien Chen ,  Fen-Ren Chien

IPC分类号： H01L21/302

CPC分类号： H01L33/007 ,  H01L33/20

摘要： A method for manufacturing a GaN-based light-emitting diode (LED) is provided with the following steps of: providing a substrate; forming a GaN semiconductor epitaxy layer on the substrate, the GaN semiconductor epitaxy layer further including an n-type GaN contact layer, a light-emitting layer and a p-type GaN contact layer; forming a digital penetration layer on the p-type GaN contact layer; using a multi-step dry etching method to etch the digital penetration layer, the p-type GaN contact layer, the light-emitting layer to form an n-metal forming area, etching terminating at the light-emitting layer; forming a first ohmic contact electrode on the digital penetration layer for a p-type ohmic contact layer and a second ohmic contact electrode on the n-metal forming area for an n-type ohmic contact layer; and finally, forming pads on both first and second ohmic contact electrodes.

摘要翻译： 提供一种制造GaN基发光二极管（LED）的方法，其具有以下步骤：提供基板; 在所述衬底上形成GaN半导体外延层，所述GaN半导体外延层还包括n型GaN接触层，发光层和p型GaN接触层; 在p型GaN接触层上形成数字穿透层; 使用多步干蚀刻方法来蚀刻数字穿透层，p​​型GaN接触层，发光层以形成n型金属形成区域，终止于发光层的蚀刻; 在用于n型欧姆接触层的n型金属形成区上的p型欧姆接触层和第二欧姆接触电极的数字穿透层上形成第一欧姆接触电极; 最后，在第一和第二欧姆接触电极上形成焊盘。

公开(公告)号：US20060081861A1

公开(公告)日：2006-04-20

申请号：US10964351

申请日：2004-10-12

申请人： Liang-Wen Wu ,  Ru-Chin Tu ,  Cheng-Tsang Yu ,  Tzu-Chi Wen ,  Fen-Ren Chien

发明人： Liang-Wen Wu ,  Ru-Chin Tu ,  Cheng-Tsang Yu ,  Tzu-Chi Wen ,  Fen-Ren Chien

IPC分类号： H01L29/225

CPC分类号： H01L33/04 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02573 ,  H01L33/06 ,  H01L33/14 ,  H01L33/32

摘要： A structure for the n-type contact layer in the GaN-based MQW LEDs is provided. Instead of using Si-doped GaN as commonly found in conventional GaN-based MQW LEDs, the n-type contact layer provided by the present invention achieves high doping density (>1×1019 cm−3) and low resistivity through a superlattice structure combining two types of materials, AlmInnGa1-m-nN and AlpInqGa1-p-qN (0≦m, n

摘要翻译： 提供了一种用于GaN基MQW LED中的n型接触层的结构。 本发明提供的n型接触层代替使用常规GaN基MQW LED中通常所发现的Si掺杂GaN，而实现了高掺杂密度（> 1×10 9Ω-3 ），并且通过结合两种类型的材料的超晶格结构，具有低电阻率的Al N和N 1 Ga （0 <= m，n <1,0

公开(公告)号：US20060076574A1

公开(公告)日：2006-04-13

申请号：US11266415

申请日：2005-11-03

申请人： Liang-Wen Wu ,  Fen-Ren Chien

发明人： Liang-Wen Wu ,  Fen-Ren Chien

IPC分类号： H01L33/00

CPC分类号： H01L33/02 ,  H01L27/15 ,  H01L33/04 ,  H01L33/32

摘要： An epitaxial structure for GaN-based LEDs to achieve better reverse withstanding voltage and anti-ESD capability is provided herein. The epitaxial structure has an additional anti-ESD thin layer as the topmost layer, which is made of undoped indium-gallium-nitrides (InGaN) or low-band-gap (Eg

摘要翻译： 本文提供了一种用于GaN基LED的外延结构，以实现更好的反向耐压和抗ESD能力。 该外延结构具有作为最顶层的另外的抗ESD薄层，其由未掺杂的铟 - 镓 - 氮化物（InGaN）或低带隙（Eg <3.4eV），未掺杂的铝 - 铟 - 镓 - 氮化物 （AlInGaN）。 抗ESD薄层还可以具有通过交织至少未掺杂的InGaN薄层和至少一个低带隙的未掺杂的AlInGaN薄层而形成的超晶格结构。 这种抗ESD薄层大大改善了GaN基LED的反向耐受电压和ESD的电阻率，这又显着地延长了GaN基LED的工作寿命。

公开(公告)号：US20060060873A1

公开(公告)日：2006-03-23

申请号：US10948401

申请日：2004-09-22

申请人： Ru-Chin Tu ,  Liang-Wen Wu ,  Cheng-Tsang Yu ,  Tzu-Chi Wen ,  Fen-Ren Chien

发明人： Ru-Chin Tu ,  Liang-Wen Wu ,  Cheng-Tsang Yu ,  Tzu-Chi Wen ,  Fen-Ren Chien

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L33/007 ,  H01L33/04 ,  H01L33/14 ,  H01L33/32

摘要： A GaN LED structure with a short period superlattice contacting layer is provided. The LED structure comprises, from the bottom to top, a substrate, a double buffer layer, an n-type GaN layer, a short period superlattice contacting layer, an active layer, a p-type shielding layer, and a contacting layer. The feature is to avoid the cracks or pin holes in the thick n-type GaN layer caused during the fabrication of heavily doped (n>1×1019 cm−3) thick n-type GaN contacting layer, so that the quality of the GaN contacting layer is assured. In addition, by using short period heavily silicon doped Al1-x-yGaxInyN (n++-Al1-x-yGaxInyN) to grow a superlattice structure to become a short period superlattice contacting layer structure, which is used as a low resistive n-type contacting layer in a GaInN/GaN MQW LED. In the following steps, it is easier to form an n-type ohmic contacting layer, and the overall electrical characteristics are improved. It also lowers the operating voltage of the entire element so that the energy consumption during operation is reduced and the yield rate is increased.

摘要翻译： 提供具有短周期超晶格接触层的GaN LED结构。 LED结构从底部到顶部包括衬底，双缓冲层，n型GaN层，短周期超晶格接触层，有源层，p型屏蔽层和接触层。 该特征是避免在重掺杂（n> 1×10 9 cm -3 -3）厚n的制造期间引起的厚n型GaN层中的裂纹或针孔 型GaN接触层，从而确保了GaN接触层的质量。 另外，通过使用短周期大量掺硅的Al 1-x N y N（n + 2）+ 以形成超晶格结构，成为短周期的超晶格接触层结构，即，其中，n为0〜 用作GaInN / GaN MQW LED中的低电阻n型接触层。 在以下步骤中，形成n型欧姆接触层更容易，并且整体电特性得到改善。 它还降低了整个元件的工作电压，从而降低了操作期间的能耗并提高了产量。

公开(公告)号：US20060054897A1

公开(公告)日：2006-03-16

申请号：US10939689

申请日：2004-09-11

申请人： Cheng-Tsang Yu ,  Ru-Chin Tu ,  Liang-Wen Wu ,  Tzu-Chi Wen ,  Fen-Ren Chien

发明人： Cheng-Tsang Yu ,  Ru-Chin Tu ,  Liang-Wen Wu ,  Tzu-Chi Wen ,  Fen-Ren Chien

IPC分类号： H01L33/00 ,  H01L31/12 ,  H01L27/15 ,  H01L29/26

CPC分类号： H01L33/32 ,  B82Y10/00 ,  B82Y20/00 ,  H01L33/06

摘要： A number of light-emitting layer structures for the GaN-based LEDs that can increase the lighting efficiency of the GaN-based LEDs on one hand and facilitate the growth of epitaxial layer with better quality on the other hand are provided. The light-emitting layer structure provided is located between the n-type GaN contact layer and the p-type GaN contact layer. Sequentially stacked on top of the n-type GaN contact layer in the following order, the light-emitting layer contains a lower barrier layer, at least one intermediate layer, and an upper barrier layer. That is, the light-emitting layer contains at least one intermediate layer interposed between the upper and lower barrier layers. When there are multiple intermediate layers inside the light-emitting layer, there is an intermediate barrier layer interposed between every two immediately adjacent intermediate layers.

摘要翻译： 提供了一些用于GaN基LED的发光层结构，其一方面可以增加GaN基LED的照明效率，另一方面促进外延层的生长，而另一方面具有更好的质量。 所提供的发光层结构位于n型GaN接触层和p型GaN接触层之间。 依次层叠在n型GaN接触层的顶部上，发光层包含下阻挡层，至少一个中间层和上阻挡层。 也就是说，发光层包含插入在上下阻挡层之间的至少一个中间层。 当在发光层内存在多个中间层时，在每两个紧邻的中间层之间插入中间阻挡层。

公开(公告)号：US20060049424A1

公开(公告)日：2006-03-09

申请号：US10964350

申请日：2004-10-12

申请人： Liang-Wen Wu ,  Ru-Chin Tu ,  Cheng-Tsang Yu ,  Tzu-Chi Wen ,  Fen-Ren Chien

发明人： Liang-Wen Wu ,  Ru-Chin Tu ,  Cheng-Tsang Yu ,  Tzu-Chi Wen ,  Fen-Ren Chien

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L27/15 ,  H01L33/02 ,  H01L33/04 ,  H01L33/42

摘要： An epitaxial structure for GaN-based LEDs to achieve better reverse withstanding voltage and anti-ESD capability is provided. The epitaxial structure has an additional anti-ESD thin layer on top of the p-type contact layer within traditional GaN-based LEDs, which is made of undoped indium-gallium-nitrides (InGaN) or low-band-gap (Eg

摘要翻译： 提供了用于GaN基LED的外延结构，以实现更好的反向耐受电压和抗ESD能力。 外延结构在传统的GaN基LED中的p型接触层的顶部具有另外的抗ESD薄层，其由未掺杂的铟镓氮化物（InGaN）或低带隙（Eg <3.4）制成 eV），未掺杂的铝 - 铟 - 镓 - 氮化物（AlInGaN）。 这种抗ESD薄层大大改善了GaN基LED的反向耐受电压和ESD的电阻率，这又显着地延长了GaN基LED的工作寿命。

公开(公告)号：US20050145872A1

公开(公告)日：2005-07-07

申请号：US10747934

申请日：2003-12-29

申请人： Chao-Yi Fang ,  Kuang-Neng Yang ,  Fen-Ren Chien ,  Lung-Chien Chen

发明人： Chao-Yi Fang ,  Kuang-Neng Yang ,  Fen-Ren Chien ,  Lung-Chien Chen

IPC分类号： H01L33/32 ,  H01L33/00

CPC分类号： H01L33/32 ,  H01L33/22

摘要： A nitride-based light-emitting diode is provided, including a substrate having a light extraction layer grown on the substrate, and a nitride semiconductor epitaxy layer grown on the light extraction layer. The external quantum efficiency is improved by changing the traveling path of the emitted light and by matching the refraction index between the light extraction layer and the substrate. Also, a high power nitride-based light-emitting diode having a sacrificial layer is disclosed. A sacrificial layer is used for growing a light-emitting structure, and a binding layer made of two or more metals or alloys is used to bind the grown light-emitting structure and a substrate with high thermoconductivity. The sacrificial layer is later entirely etched away with a chemical solution used in a chemical etching process, and the nitrogen epitaxy structure is placed on the substrate with high thermoconductivity so that the diode can operate at high electrical current to improve external quantum efficiency.

摘要翻译： 提供一种氮化物系发光二极管，其包括在基板上生长的光提取层的基板和在该光提取层上生长的氮化物半导体外延层。 通过改变发射光的行进路径和通过匹配光提取层和衬底之间的折射率来提高外部量子效率。 另外，公开了具有牺牲层的高功率氮化物系发光二极管。 牺牲层用于生长发光结构，并且使用由两种或更多种金属或合金制成的粘合层来结合生长的发光结构和具有高导热性的基板。 牺牲层随后用化学蚀刻工艺中使用的化学溶液完全蚀刻掉，并且氮外延结构被放置在具有高导热性的衬底上，使得二极管可以在高电流下工作以改善外部量子效率。

公开(公告)号：US06492661B1

公开(公告)日：2002-12-10

申请号：US09434316

申请日：1999-11-04

申请人： Fen-Ren Chien ,  Schang-Jing Hon ,  Mu-Jen Lai

发明人： Fen-Ren Chien ,  Schang-Jing Hon ,  Mu-Jen Lai

IPC分类号： H01L3300

CPC分类号： H01L33/405 ,  H01L33/0079 ,  H01L33/145

摘要： A light-emitting device with a reflection layer is disclosed. The reflection layer is formed on a light emitting stack structure. A second substrate is subsequently combined with the reflection layer, and then the original substrate of the stack structure is removed, such that the second substrate becomes the substrate of the device. The reflection layer can effectively reflect the light emitted from the light emitting stack structure and directed to the substrate, and thus can increase the light-emitting efficiency of a surface-emitting type light-emitting device. The invention can also convert a light-emnitting device using an insulated substrate to be the one having vertical type electrode structure so as to effectively reduce the wafer area used for a die and facilitate subsequent wiring and packaging processes using traditional mechanisms.

摘要翻译： 公开了一种具有反射层的发光器件。 反射层形成在发光堆叠结构上。 随后将第二衬底与反射层组合，然后去除堆叠结构的原始衬底，使得第二衬底变成器件的衬底。 反射层可以有效地反射从发光堆叠结构发出的光并被引导到衬底，从而可以提高表面发射型发光器件的发光效率。 本发明还可以将使用绝缘基板的发光装置转换为具有垂直型电极结构的发光装置，以便有效地减少用于晶片的晶片面积，并利用传统的机制促进后续的布线和封装工艺。

公开(公告)号：US06248608B1

公开(公告)日：2001-06-19

申请号：US09653496

申请日：2000-08-31

申请人： Fen-Ren Chien ,  Lung-Chien Chen ,  Yi-Tsung Chang

发明人： Fen-Ren Chien ,  Lung-Chien Chen ,  Yi-Tsung Chang

IPC分类号： H01L2100

CPC分类号： H01L33/42 ,  H01L21/28575 ,  H01L33/0095 ,  H01L33/32

摘要： A manufacturing method and its structure of a gallium nitride-based blue light emitting diode (LED) ohmic electrodes and a transparent conductive layer (TCL), which forms a thin composite layer upon P type gallium nitride and a composite thin film ohmic electrodes upon P type gallium nitride epitaxial layer and N type gallium nitride epitaxial layer, respectively. Heat treatment is applied to said composite thin film layer and composite thin film ohmic electrodes to obtain the optimized ohmic properties and transparency so as to uniformly disperse the injected current throughout the N type electrode.

摘要翻译： 一种氮化镓基蓝色发光二极管（LED）欧姆电极和透明导电层（TCL）的制造方法及其结构，其在P型氮化镓上形成薄复合层，并且在P上形成复合薄膜欧姆电极 型氮化镓外延层和N型氮化镓外延层。 对所述复合薄膜层和复合薄膜欧姆电极进行热处理，以获得优化的欧姆性能和透明度，以便均匀地分散注入的电流遍及N型电极。