摘要:
A method for operating a memory apparatus which comprises at least two memory devices, each memory device containing at least one bank, comprising: activation of at least one word line in at least one bank on the basis of a row activation command; storage of bank information, the bank information indicating which banks per memory device contain a word line activated by the row activation command; reading/writing of memory contents from/to banks with activated word lines on the basis of the bank information.
摘要:
A memory apparatus includes at least two memory devices, each memory device including at least one memory bank. A method of operating the memory apparatus includes receiving a row activation command generated by a memory controller, wherein the row activation command includes a bank address. The method also includes activating a word line in a bank of one of the memory devices based on the row activation command, wherein the bank address is used to select the memory device.
摘要:
Embodiments of the invention relate to an integrated circuit comprising at least one functional unit configured to operate at a first clock frequency. The integrated circuit also comprises at least one first interconnect originating from a contact pad and leading to at least one frequency divider configured to receive a clock signal having a second frequency and generate one or more clock signals to operate the functional unit at the first frequency. The integrated circuit further comprises at least one second interconnect coupling an output of the frequency divider and an input of the functional unit, wherein a total length of the second wired interconnect is less than a total length of the first wired interconnects.
摘要:
A semiconductor device having a stacked arrangement of a substrate and a first chip and a second chip is disclosed. In one embodiment, the first chip is arranged with a lower face on an upper face of the substrate; the second chip with a lower face on an upper face of the first chip, whereby a partial area of the upper face of the first chip that is adjacent to an edge of the first chip is uncovered by the second chip; a fifth wire contact pad is arranged on the uncovered area of the upper face of the first chip; a first bonding wire is arranged that is connected with a first wire contact pad of the substrate and the fifth wire contact pad of the first chip.
摘要:
A chip includes a memory array and a refresh counter. The refresh counter is configured to receive refresh trigger signals. The refresh counter is configured or configurable to initiate a refresh of the memory array only once per i of the received refresh trigger signals where i is a number greater than 1.
摘要:
A semiconductor memory module includes a plurality of semiconductor memory chips and bus signal lines that supply an incoming clock signal and incoming command and address signals to the semiconductor memory chips. A clock signal regeneration circuit and a register circuit are arranged on the semiconductor memory module in a common chip packing connected to the bus signal lines. The clock signal regeneration circuit and the register circuit respectively condition the incoming clock signal and temporarily store the incoming command and address signals, respectively multiply the conditioned clock signal and the temporarily stored command and address signals by a factor of 1:X, and respectively supply to the semiconductor memory chips the conditioned clock signal and the temporarily stored command and address signals.
摘要:
A memory system is functionally designed so that, despite operation without an error correction device, memory chips of a memory module that are actually provided for error correction are concomitantly used for the data transfer. A control device is configured to receive, store and transfer data packets to and from a first and second set of memory chips. Transfer of an internal packet data from the control device to memory takes place such that a first record is stored in a second set of memory chips and additional records are stored in the first set of memory chips. In preferred embodiments, data is allocated in the second set of memory chips such that at least one additional transfer step takes place to the second set of memory chips compared with transfers to the first set of memory chips. In the additional transfer step(s), the first set of memory chips is masked from receiving data.
摘要:
An arrangement of semiconductor memory devices includes a first semiconductor memory device and a second semiconductor memory device. The arrangement of semiconductor memory devices also has a flexible substrate. A first electrically conductive conductor track is arranged in the flexible substrate. At least one first contact of the flexible substrate is coupled to the at least one second contact of the second semiconductor memory device through the first electrically conductive conductor track. A second electrically conductive conductor track is arranged in the flexible substrate.
摘要:
A multi-chip package and method is disclosed. In one embodiment, the multi-chip package includes at least four of spaced semiconductor integrated circuit chips mounted on a printed circuit board, consisting of the first pair of the semiconductor integrated circuit chips and the second pair of the semiconductor integrated circuit chips. The chips of the first pair of the semiconductor integrated circuit chips are arranged substantially parallel and the chips of the semiconductor integrated circuit chips of the second pair are arranged substantially stacked over the chips of the first pair of the semiconductor integrated circuit chips.
摘要:
A semiconductor memory system is disclosed. In one embodiment, the semiconductor memory system and memory module of the present invention provides a buffer, wherein at least one write buffer chip on the memory module is only buffering and registering write data, command and address signals written from a memory controller to the memory chips. As read data are written back from each memory chip directly to the memory controller through unidirectional point-to-point read data lines the present semiconductor memory system achieves a low latency as compared with a fully buffered DIMM concept. As read data are only unidirectional a high transmission bandwidth can be achieved.