Programmable oscillator with power down feature and frequency adjustment
    71.
    发明授权
    Programmable oscillator with power down feature and frequency adjustment 失效
    具有断电功能和频率调节的可编程振荡器

    公开(公告)号:US4536720A

    公开(公告)日:1985-08-20

    申请号:US551451

    申请日:1983-11-14

    CPC分类号: H03K3/354 H03K3/0315 H03K3/70

    摘要: A programmable oscillator is provided for use on an integrated circuit chip. The oscillator includes a plurality of inverter delay stages connected in tandem between an input and an output node. A single FET device couples a node common to all of the inverter delay stages to a ground potential. Another FET device controls the input node. When a logic enabling signal is appropriately applied to the FET devices, the oscillator is controlled so that internal nodes of the oscillator float high when it is off and no energy is dissipated. In addition, the amount of delays between the delay stages and the input stage of the load is such that the load supplies the greater ratio of delays. This ensures that the oscillator's frequency of oscillation tracks the switching speed of the load.

    摘要翻译: 提供了一种用于集成电路芯片的可编程振荡器。 该振荡器包括串联连接在输入和输出节点之间的多个反相器延迟级。 单个FET器件将所有反相器延迟级公共的节点耦合到地电位。 另一个FET器件控制输入节点。 当逻辑使能信号被适当地施加到FET器件时,振荡器被控制,使得振荡器的内部节点在关闭时浮起,并且没有能量消耗。 此外,延迟级与负载的输入级之间的延迟量使得负载提供较大的延迟比。 这确保振荡器的振荡频率跟踪负载的切换速度。

    High voltage on chip FET driver
    72.
    发明授权
    High voltage on chip FET driver 失效
    高压片上FET驱动器

    公开(公告)号:US4429237A

    公开(公告)日:1984-01-31

    申请号:US245802

    申请日:1981-03-20

    摘要: High voltage tolerant FET circuits are characterized by the use of shield structures surrounding source/drain diffusion pockets, with the shields tied to apropriate potentials, which in some cases is the associated gate potential. Some embodiments use enhancement mode devices which however have implanted channels underlying the shield structures. Operation of several embodiments is achieved near the snap-back limits by the use of a clamp to maintain potential drop below this limit. High voltage switching at heavy loads is achieved by a voltage divider providing appropriate gate potentials to the load carrying FETs.

    摘要翻译: 高耐压FET电路的特征在于使用围绕源极/漏极扩散穴的屏蔽结构,其中屏蔽层被绑定到合适的电势,这在某些情况下是相关联的栅极电位。 一些实施例使用增强模式设备,然而其具有在屏蔽结构下方的植入通道。 几个实施例的操作通过使用夹具保持潜在的下降到该极限以下而在快速恢复极限附近实现。 重负载下的高电压开关是通过分压器为负载负载FET提供适当的栅极电压来实现的。

    Static noise margin monitoring circuit and method
    73.
    发明授权
    Static noise margin monitoring circuit and method 有权
    静态噪声容限监控电路及方法

    公开(公告)号:US08729908B2

    公开(公告)日:2014-05-20

    申请号:US13407822

    申请日:2012-02-29

    IPC分类号: G01R29/26

    摘要: A monitoring circuit and method, wherein a voltage waveform having a linear falling edge is applied to a first node of at least one test memory cell (e.g., a plurality of test memory cells connected in parallel). The input voltage at the first node is captured when the output voltage at a second node of the test memory cell(s) rises above a high reference voltage during the falling edge. Then, a difference is determined between the input voltage as captured and either (1) the output voltage at the second node, as captured when the input voltage at the first node falls below the first reference voltage during the falling edge, or (2) a low reference voltage. This difference is proportional to the static noise margin (SNM) of the test memory cell(s) such that any changes in the difference noted with repeated monitoring are indicative of corresponding changes in the SNM.

    摘要翻译: 一种监视电路和方法,其中具有线性下降沿的电压波形被施加到至少一个测试存储器单元(例如,并联连接的多个测试存储单元)的第一节点。 当在下降沿期间,当测试存储单元的第二个节点处的输出电压上升到高于参考电压时,捕获第一节点处的输入电压。 然后,在捕获的输入电压和(1)第二节点处的输出电压之间确定差异,如在第一节点处的输入电压在下降沿期间低于第一参考电压时捕获的,或者(2) 低参考电压。 该差异与测试存储器单元的静态噪声容限(SNM)成比例,使得通过重复监测指出的差异中的任何变化表示SNM的相应变化。

    Solutions for controlling bulk bias voltage in an extremely thin silicon-on-insulator (ETSOI) integrated circuit chip
    74.
    发明授权
    Solutions for controlling bulk bias voltage in an extremely thin silicon-on-insulator (ETSOI) integrated circuit chip 有权
    用于在非常薄的绝缘体上(ETSOI)集成电路芯片上控制体偏置的解决方案

    公开(公告)号:US08416009B2

    公开(公告)日:2013-04-09

    申请号:US13181754

    申请日:2011-07-13

    IPC分类号: H01L27/12

    摘要: Solutions for optimizing a bulk bias across a substrate of an ETSOI device are disclosed. In one embodiment, an apparatus for optimizing a bulk bias across a substrate of an ETSOI device is disclosed, including: a sensing circuit for sensing at least one predetermined circuit parameter; a charging circuit for applying a bias voltage to the substrate of the ETSOI device; and a processing circuit connected to the sensing circuit and the charging circuit, the processing circuit configured to receive an output of the sensing circuit, and adjust the bias voltage applied to substrate of the ETSOI device in response to determining whether the bias voltage deviates from a target amount.

    摘要翻译: 公开了用于优化跨越ETSOI设备的衬底的体偏压的解决方案。 在一个实施例中,公开了一种用于优化跨越ETSOI设备的衬底的体偏压的装置,包括:用于感测至少一个预定电路参数的感测电路; 用于向ETSOI装置的基板施加偏置电压的充电电路; 以及连接到所述感测电路和所述充电电路的处理电路,所述处理电路被配置为接收所述感测电路的输出,并且响应于确定所述偏置电压是否偏离所述偏置电压而调整施加到所述ETSOI器件的衬底的偏置电压 目标金额。

    Design structure for transmitter bandwidth optimization circuit
    75.
    发明授权
    Design structure for transmitter bandwidth optimization circuit 有权
    发射机带宽优化电路的设计结构

    公开(公告)号:US08219041B2

    公开(公告)日:2012-07-10

    申请号:US11985963

    申请日:2007-11-19

    IPC分类号: H04B1/02

    CPC分类号: H04L25/0286 H04L25/03343

    摘要: A design structure embodied in a machine-readable medium used in a design process provides a transmitter having a frequency response controllable in accordance with an operational parameter, and may include a storage operable to store operational parameters for controlling a frequency response of the transmitter under each of a plurality of corresponding operating conditions. A sensor can be used to detect an operating condition. In response to a change in the detected operating condition, a stored operational parameter corresponding to the detected operating condition can be used to control the frequency response of the transmitter.

    摘要翻译: 体现在设计过程中使用的机器可读介质中的设计结构提供具有根据操作参数可控的频率响应的发射机,并且可以包括可操作地存储用于控制每个发射机的频率响应的操作参数的存储器 的多个相应的操作条件。 可以使用传感器来检测操作状态。 响应于检测到的操作条件的变化,可以使用与检测到的操作条件对应的存储的操作参数来控制发送器的频率响应。

    System and method for balancing delay of signal communication paths through well voltage adjustment
    76.
    发明授权
    System and method for balancing delay of signal communication paths through well voltage adjustment 有权
    通过井电压调整来平衡信号通信路径的延迟的系统和方法

    公开(公告)号:US08051340B2

    公开(公告)日:2011-11-01

    申请号:US12136359

    申请日:2008-06-10

    IPC分类号: G01R31/28

    CPC分类号: H03K5/133 H03K2005/00032

    摘要: A method of balancing signal interconnect path delays between an analog domain and a digital domain of an integrated circuit includes applying a test signal to a selected one of a plurality of communication paths between the analog domain and the digital domain. A rising edge delay and a falling edge delay of the test signal is equalized by adjusting a body bias voltage of a delay element configured within the selected communication path. A rising edge delay and a falling edge delay for each of the remaining communication paths is compared with the equalized rising edge delay and falling edge delay of the selected communication path, and a body bias voltage for one or more of a plurality of delay elements configured within each of the remaining communication paths is adjusted until corresponding rising and falling edge delays thereof match the equalized rising edge delay and falling edge delay of the selected communication path.

    摘要翻译: 在集成电路的模拟域和数字域之间平衡信号互连路径延迟的方法包括将测试信号应用于模拟域和数字域之间的多个通信路径中的所选择的一个。 通过调整配置在所选择的通信路径内的延迟元件的体偏置电压来平衡测试信号的上升沿延迟和下降沿延迟。 将每个剩余通信路径的上升沿延迟和下降沿延迟与所选择的通信路径的均衡的上升沿延迟和下降沿延迟进行比较,并且配置多个延迟元件中的一个或多个的体偏置电压 在每个剩余的通信路径内进行调整,直到相应的上升沿和下降沿延迟与所选通信路径的均衡上升沿延迟和下降沿延迟相匹配。

    Receiver termination circuit for a high speed direct current (DC) serial link
    77.
    发明授权
    Receiver termination circuit for a high speed direct current (DC) serial link 有权
    用于高速直流(DC)串行链路的接收器终端电路

    公开(公告)号:US07995660B2

    公开(公告)日:2011-08-09

    申请号:US11930975

    申请日:2007-10-31

    IPC分类号: H04B1/10 H04B3/00

    CPC分类号: H04L25/0294 H04L25/0276

    摘要: A method for matching receiver and transmitter common-mode voltages for a high-speed direct current (DC) serial connection between the receiver and the transmitter includes measuring, at the receiver, a common-mode voltage of the transmitter. The common-mode voltage of the transmitter is an average of a voltage signal transmitted by the transmitter and received by the receiver. The method further includes comparing the common-mode voltage of the transmitter with a common-mode voltage of the receiver. The method further includes maintaining the common-mode voltage of the receiver at a first level at which the common-mode voltage of the receiver substantially matches the common-mode voltage of the transmitter.

    摘要翻译: 用于匹配接收机和发射机之间的高速直流(DC)串行连接的接收机和发射机共模电压的方法包括在接收机处测量发射机的共模电压。 发射机的共模电压是发射机发射并由接收机接收的电压信号的平均值。 该方法还包括将发射器的共模电压与接收器的共模电压进行比较。 该方法还包括将接收器的共模电压维持在接收器的共模电压基本上与发射机的共模电压相匹配的第一电平。

    Power network reconfiguration using MEM switches
    79.
    发明授权
    Power network reconfiguration using MEM switches 有权
    使用MEM开关进行电力网重新配置

    公开(公告)号:US07624289B2

    公开(公告)日:2009-11-24

    申请号:US11949129

    申请日:2007-12-03

    IPC分类号: G06F1/00 G06F1/26 H02M3/335

    摘要: A structure and method for power distribution to a network for an integrated circuit chip complex are provided. The chip complex has at least two sectors, each having at least one power providing connection with at least one of said connections beings individually addressable by, and isolatable from, a given power source. At least one MEMS is positioned to selectively connect and disconnect said at least one connection to and from said given power source.

    摘要翻译: 提供了一种用于集成电路芯片复合体的网络配电的结构和方法。 芯片复合体具有至少两个扇区,每个扇区具有至少一个功率提供与至少一个所述连接体的连接,所述至少一个所述连接体可以由给定的电源单独寻址并且可与其隔离。 至少一个MEMS被定位成选择性地将所述至少一个连接与所述给定电源连接和断开。