公开(公告)号：US07763967B2

公开(公告)日：2010-07-27

申请号：US12155375

申请日：2008-06-03

申请人： Toshiyuki Hata ,  Takeshi Otani ,  Ichio Shimizu

发明人： Toshiyuki Hata ,  Takeshi Otani ,  Ichio Shimizu

IPC分类号： H01L21/461

CPC分类号： H01L24/33 ,  H01L23/49562 ,  H01L2224/1134 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/181 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device has a sealing body formed of an insulating resin and a semiconductor chip positioned within the sealing body. A gate electrode and a source electrode are on a first main surface of the semiconductor chip and a back electrode (drain electrode) is on a second main surface thereof. An upper surface of a portion of a drain electrode plate that projects in a gull wing shape is exposed from the sealing body and a lower surface thereof is connected to the back electrode through an adhesive. A gate electrode plate projects in a gull wing shape on an opposite end side of the sealing body and is connected to the gate electrode within the sealing body. A source electrode plate projects in a gull wing shape on the opposite end side of the sealing body and is connected to the source electrode within the sealing body.

摘要翻译： 半导体器件具有由绝缘树脂和位于密封体内的半导体芯片形成的密封体。 栅电极和源电极位于半导体芯片的第一主表面上，背电极（漏电极）在其第二主表面上。 漏极电极板的以鸥翼形突出的部分的上表面从密封体露出，并且其下表面通过粘合剂连接到背电极。 栅电极板在密封体的相对端侧突出为鸥翼形，并且与密封体内的栅电极连接。 源电极板在密封体的相对端侧突出为鸥翼形，并且在密封体内与源电极连接。

公开(公告)号：US20100030556A1

公开(公告)日：2010-02-04

申请号：US12428216

申请日：2009-04-22

申请人： Masakiyo Tanaka ,  Takeshi Otani ,  Shusaku Ito

发明人： Masakiyo Tanaka ,  Takeshi Otani ,  Shusaku Ito

IPC分类号： G10L21/02

CPC分类号： G11B20/24 ,  G10L21/0208 ,  G11B20/10009 ,  G11B20/10527 ,  G11B2020/10564

摘要： A difference signal calculating unit of a noise detecting device calculates a difference between the amplitudes of a residual signal at each sample timing and a residual signal at the preceding sample timing. A difference signal comparing unit determines whether or not an impulsive noise is present on the basis of the difference signal at the current sample timing, and the difference signal at each sample timing within a predetermined duration from the current sample timing.

摘要翻译： 噪声检测装置的差分信号计算单元计算每个采样定时的残差信号的振幅与前一采样定时的残差信号之间的差值。 差分信号比较单元基于当前采样定时的差分信号和来自当前采样定时的预定持续时间内的每个采样定时的差信号来确定脉冲噪声是否存在。

公开(公告)号：US20090001559A1

公开(公告)日：2009-01-01

申请号：US12155479

申请日：2008-06-05

申请人： Yukihiro Satou ,  Takeshi Otani ,  Hiroyuki Takahashi ,  Toshiyuki Hata ,  Ichio Shimizu

发明人： Yukihiro Satou ,  Takeshi Otani ,  Hiroyuki Takahashi ,  Toshiyuki Hata ,  Ichio Shimizu

IPC分类号： H01L23/34

CPC分类号： H01L24/97 ,  H01L23/3107 ,  H01L23/49548 ,  H01L23/49562 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/40137 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73207 ,  H01L2224/73221 ,  H01L2224/73253 ,  H01L2224/73255 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A novel semiconductor device high in both heat dissipating property and connection reliability in mounting is to be provided. The semiconductor device comprises a semiconductor chip, a resin sealing member for sealing the semiconductor chip, a first conductive member connected to a first electrode formed on a first main surface of the semiconductor chip, and a second conductive member connected to a second electrode formed on a second main surface opposite to the first main surface of the semiconductor chip, the first conductive member being exposed from a first main surface of the resin sealing member, and the second conductive member being exposed from a second main surface opposite to the first main surface of the resin sealing member and also from side faces of the resin sealing member.

摘要翻译： 提供一种具有高散热性和安装连接可靠性的新型半导体器件。 半导体器件包括半导体芯片，用于密封半导体芯片的树脂密封构件，连接到形成在半导体芯片的第一主表面上的第一电极的第一导电构件和连接到形成在半导体芯片上的第二电极的第二导电构件 与半导体芯片的第一主表面相对的第二主表面，第一导电构件从树脂密封构件的第一主表面露出，并且第二导电构件从与第一主表面相对的第二主表面露出 树脂密封构件的侧面和树脂密封构件的侧面。

公开(公告)号：US07342307B2

公开(公告)日：2008-03-11

申请号：US11649253

申请日：2007-01-04

申请人： Toshiyuki Hata ,  Takamitsu Kanazawa ,  Takeshi Otani

发明人： Toshiyuki Hata ,  Takamitsu Kanazawa ,  Takeshi Otani

IPC分类号： H01L23/34 ,  H01L23/495 ,  H01L29/80 ,  H01L31/0328

CPC分类号： H01L24/06 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05647 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/48647 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device includes: a package; two semiconductor chip fixing parts located adjacently to each other in the package; and first and the second semiconductor chips, each of which is fixed on the semiconductor chip fixing part and has a field effect transistor formed therein. A gate lead G1, a source lead S1, and a drain lead D2 are arranged from left to right on the first surface of the package and a drain lead D1, a source lead S2, and a gate lead G2 are arranged from left to right on the second surface. A gap between the source lead S1 and the drain lead D2 is two times a gap between the gate lead G1 and the source lead S1, and a gap between the drain lead D1 and the source lead S2 is two times a gap between the source lead S2 and the gate lead G2.

摘要翻译： 半导体器件包括：封装; 在封装中彼此相邻的两个半导体芯片固定部件; 以及第一和第二半导体芯片，每个半导体芯片固定在半导体芯片固定部分上，并且其中形成有场效应晶体管。 栅极引线G 1，源极引线S1和漏极引线D 2从封装的第一表面上从左到右布置，漏极引线D1，源极引线S2和栅极引线G2 在第二表面上从左到右排列。 源极引线S1和漏极引线D2之间的间隙是栅极引线G 1和源极引线S 1之间的间隙的两倍，并且漏极引线D 1与源极引线S 2之间的间隙是两倍 源极引线S2和栅极引线G 2之间的间隙。

公开(公告)号：US06992385B2

公开(公告)日：2006-01-31

申请号：US10755375

申请日：2004-01-13

申请人： Yukihiro Satou ,  Takeshi Otani ,  Hiroyuki Takahashi ,  Toshiyuki Hata ,  Ichio Shimizu

发明人： Yukihiro Satou ,  Takeshi Otani ,  Hiroyuki Takahashi ,  Toshiyuki Hata ,  Ichio Shimizu

IPC分类号： H01L23/48

CPC分类号： H01L24/97 ,  H01L23/3107 ,  H01L23/49548 ,  H01L23/49562 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/40137 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73207 ,  H01L2224/73221 ,  H01L2224/73253 ,  H01L2224/73255 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A novel semiconductor device high in both heat dissipating property and connection reliability in mounting is to be provided. The semiconductor device comprises a semiconductor chip, a resin sealing member for sealing the semiconductor chip, a first conductive member connected to a first electrode formed on a first main surface of the semiconductor chip, and a second conductive member connected to a second electrode formed on a second main surface opposite to the first main surface of the semiconductor chip, the first conductive member being exposed from a first main surface of the resin sealing member, and the second conductive member being exposed from a second main surface opposite to the first main surface of the resin sealing member and also from side faces of the resin sealing member.

公开(公告)号：US08892430B2

公开(公告)日：2014-11-18

申请号：US12428216

申请日：2009-04-22

申请人： Masakiyo Tanaka ,  Takeshi Otani ,  Shusaku Ito

发明人： Masakiyo Tanaka ,  Takeshi Otani ,  Shusaku Ito

IPC分类号： G10L21/00 ,  G11B20/24 ,  G10L21/0208 ,  G10L15/00 ,  G06F11/00 ,  H03M13/00 ,  H04R29/00 ,  H04R3/00 ,  H04B3/46 ,  H04B1/38 ,  H04L5/12 ,  G11B20/10

CPC分类号： G11B20/24 ,  G10L21/0208 ,  G11B20/10009 ,  G11B20/10527 ,  G11B2020/10564

摘要： A difference signal calculating unit of a noise detecting device calculates a difference between the amplitudes of a residual signal at each sample timing and a residual signal at the preceding sample timing. A difference signal comparing unit determines whether or not an impulsive noise is present on the basis of the difference signal at the current sample timing, and the difference signal at each sample timing within a predetermined duration from the current sample timing.

摘要翻译： 噪声检测装置的差分信号计算单元计算每个采样定时的残差信号的振幅与前一采样定时的残差信号之间的差值。 差分信号比较单元基于当前采样定时的差分信号和来自当前采样定时的预定持续时间内的每个采样定时的差信号来确定脉冲噪声是否存在。

公开(公告)号：US08463607B2

公开(公告)日：2013-06-11

申请号：US12625639

申请日：2009-11-25

申请人： Masakiyo Tanaka ,  Takeshi Otani ,  Shusaku Ito

发明人： Masakiyo Tanaka ,  Takeshi Otani ,  Shusaku Ito

IPC分类号： G10L21/02

CPC分类号： G10K11/178 ,  G10K2210/108 ,  G10K2210/3025 ,  G10L21/0208 ,  G10L2021/02085

摘要： A noise detection apparatus includes a time-frequency transform unit configured to transform an input signal from a time domain to a frequency domain to produce a spectrum, a power spectrum calculating unit configured to obtain powers of frequencies from the spectrum, a peak stationarity detecting unit configured to use peaks of the powers of frequencies in each frame to detect frequencies at which a stationary peak of the powers exists, a power stationarity detecting unit configured to use magnitudes of the powers of frequencies in each frame to detect frequencies at which the magnitudes of the powers are stationary, and a check unit configured to use the frequencies detected by the peak stationarity detecting unit and the frequencies detected by the power stationarity detecting unit to check whether there is a noise that has at least one of peak stationarity and power stationarity in the frequency domain.

摘要翻译： 噪声检测装置包括：时间 - 频率变换单元，被配置为将来自时域的输入信号变换为频域以产生频谱;功率谱计算单元，被配置为从频谱获得频率的功率;峰值平稳性检测单元 被配置为使用每个帧中的频率功率的峰值来检测存在功率的稳定峰值的频率;配置为使用每帧中的频率功率的大小来检测频率的频率的功率平稳检测单元， 功率是稳定的，并且检查单元被配置为使用由峰值平稳性检测单元检测的频率和由平均电平检测单元检测的频率来检查是否存在具有峰均衡和功率平稳性中的至少一个的噪声 频域。

公开(公告)号：US20120016669A1

公开(公告)日：2012-01-19

申请号：US13072992

申请日：2011-03-28

申请人： Kaori Endo ,  Takeshi Otani ,  Hitoshi Sasaki ,  Mitsuyoshi Matsubara ,  Rika Nishiike ,  Kaoru Chujo

发明人： Kaori Endo ,  Takeshi Otani ,  Hitoshi Sasaki ,  Mitsuyoshi Matsubara ,  Rika Nishiike ,  Kaoru Chujo

IPC分类号： G10L19/14

CPC分类号： G10L21/038 ,  G10L21/02 ,  G10L21/0208 ,  G10L21/0232

摘要： A voice processing apparatus includes a voice signal acquiring unit that acquires a voice signal converted to plural frequency bands from an input signal having a narrowed band; an expanding unit that generates based on a narrowband component of the voice signal acquired by the voice signal acquiring unit, an expansion band component expanding the band of the voice signal; a correcting unit that corrects the power of the expansion band component by a correction amount determined based on a noise component included in the voice signal acquired by the voice signal acquiring unit; and an output unit that outputs the voice signal of which the band has been expanded based on the expansion band component corrected by the correcting unit and based on the narrowband component of the voice signal acquired by the voice signal acquiring unit.

摘要翻译： 语音处理装置包括语音信号获取单元，其从具有变窄频带的输入信号中获取被转换成多个频带的语音信号; 扩展单元，其基于由语音信号获取单元获取的语音信号的窄带分量生成扩展频带分量，扩展语音信号的频带; 校正单元，其通过基于由语音信号获取单元获取的语音信号中包括的噪声分量确定的校正量校正扩展频带分量的功率; 以及输出单元，其基于由所述校正单元校正的所述扩展频带分量，并且基于由所述语音信号获取单元获取的所述语音信号的窄带分量来输出已经扩展了所述频带的语音信号。

公开(公告)号：US08022518B2

公开(公告)日：2011-09-20

申请号：US12759008

申请日：2010-04-13

申请人： Yukihiro Satou ,  Takeshi Otani ,  Hiroyuki Takahashi ,  Toshiyuki Hata ,  Ichio Shimizu

发明人： Yukihiro Satou ,  Takeshi Otani ,  Hiroyuki Takahashi ,  Toshiyuki Hata ,  Ichio Shimizu

IPC分类号： H01L23/495

CPC分类号： H01L24/97 ,  H01L23/3107 ,  H01L23/49548 ,  H01L23/49562 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/40137 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73207 ,  H01L2224/73221 ,  H01L2224/73253 ,  H01L2224/73255 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A novel semiconductor device high in both heat dissipating property and connection reliability in mounting is to be provided. The semiconductor device comprises a semiconductor chip, a resin sealing member for sealing the semiconductor chip, a first conductive member connected to a first electrode formed on a first main surface of the semiconductor chip, and a second conductive member connected to a second electrode formed on a second main surface opposite to the first main surface of the semiconductor chip, the first conductive member being exposed from a first main surface of the resin sealing member, and the second conductive member being exposed from a second main surface opposite to the first main surface of the resin sealing member and also from side faces of the resin sealing member.

摘要翻译： 提供一种具有高散热性和安装连接可靠性的新型半导体器件。 半导体器件包括半导体芯片，用于密封半导体芯片的树脂密封构件，连接到形成在半导体芯片的第一主表面上的第一电极的第一导电构件和连接到形成在半导体芯片上的第二电极的第二导电构件 与半导体芯片的第一主表面相对的第二主表面，第一导电构件从树脂密封构件的第一主表面露出，并且第二导电构件从与第一主表面相对的第二主表面露出 树脂密封构件的侧面和树脂密封构件的侧面。

公开(公告)号：US20100193934A1

公开(公告)日：2010-08-05

申请号：US12759008

申请日：2010-04-13

申请人： Yukihiro Satou ,  Takeshi Otani ,  Hiroyuki Takahashi ,  Toshiyuki Hata ,  Ichio Shimizu

发明人： Yukihiro Satou ,  Takeshi Otani ,  Hiroyuki Takahashi ,  Toshiyuki Hata ,  Ichio Shimizu

IPC分类号： H01L23/488 ,  H01L23/36

CPC分类号： H01L24/97 ,  H01L23/3107 ,  H01L23/49548 ,  H01L23/49562 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/40137 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73207 ,  H01L2224/73221 ,  H01L2224/73253 ,  H01L2224/73255 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A novel semiconductor device high in both heat dissipating property and connection reliability in mounting is to be provided. The semiconductor device comprises a semiconductor chip, a resin sealing member for sealing the semiconductor chip, a first conductive member connected to a first electrode formed on a first main surface of the semiconductor chip, and a second conductive member connected to a second electrode formed on a second main surface opposite to the first main surface of the semiconductor chip, the first conductive member being exposed from a first main surface of the resin sealing member, and the second conductive member being exposed from a second main surface opposite to the first main surface of the resin sealing member and also from side faces of the resin sealing member.

摘要翻译： 提供一种具有高散热性和安装连接可靠性的新型半导体器件。 半导体器件包括半导体芯片，用于密封半导体芯片的树脂密封构件，连接到形成在半导体芯片的第一主表面上的第一电极的第一导电构件和连接到形成在半导体芯片上的第二电极的第二导电构件 与半导体芯片的第一主表面相对的第二主表面，第一导电构件从树脂密封构件的第一主表面露出，并且第二导电构件从与第一主表面相对的第二主表面露出 树脂密封构件的侧面和树脂密封构件的侧面。