公开(公告)号：US20050051098A1

公开(公告)日：2005-03-10

申请号：US10655046

申请日：2003-09-05

申请人： Tooru Aramaki ,  Tsunehiko Tsubone ,  Ryujiro Udo ,  Motohiko Yoshigai ,  Takashi Fujii

发明人： Tooru Aramaki ,  Tsunehiko Tsubone ,  Ryujiro Udo ,  Motohiko Yoshigai ,  Takashi Fujii

IPC分类号： C23C16/00 ,  C23C16/458 ,  C23C16/46 ,  C23F1/00 ,  H01L21/00

CPC分类号： C23C16/4581 ,  C23C16/4586 ,  C23C16/46 ,  H01J2237/2001 ,  H01L21/67109 ,  H01L21/6719

摘要： A plasma processing apparatus capable of processing a sample with high precision by adjusting the temperature of a wafer in a wide range is provided. The plasma processing apparatus for processing a sample with a plasma generated by using a gas has: a processing chamber having an inner space reduced in pressure; a sample holder on which the sample is placed, the sample holder being disposed in the processing chamber; and a plurality of openings through which the gas is introduced into the processing chamber, the plural openings being located above the sample holder, wherein the sample holder on which the sample is placed has: ring-shaped projecting portions disposed concentrically on a surface of the sample holder to have respective surfaces thereof in contact with a surface of the sample and partition a space between the surface of the sample and the surface of the sample holder into a plurality of regions; a first opening located in a first region, which is the circumferentially outermost one of the plural regions, to introduce a gas for heat transfer therethrough; and a second opening located in a second region, which is internal of the circumferentially outermost region, to allow the gas in the region to flow out therethrough.

摘要翻译： 提供了能够通过在宽范围内调整晶片的温度来高精度地处理样品的等离子体处理装置。 用于通过使用气体产生的等离子体处理样品的等离子体处理装置具有：具有减小的内部空间的处理室; 其上放置样品的样品架，所述样品架设置在所述处理室中; 以及多个开口，通过该开口将气体引入到处理室中，多个开口位于样品保持器上方，其中放置样品的样品保持器具有：同心地设置在样品保持器的表面上的环形突出部分 样品保持器，其各自的表面与样品的表面接触，并将样品表面和样品保持器的表面之间的空间分隔成多个区域; 第一开口，位于第一区域中，该第一区域是多个区域中的周向最外面的一个，以引入用于热传递的气体; 以及位于周向最外侧区域内部的第二区域中的第二开口，以允许该区域中的气体流出。

公开(公告)号：US06838833B2

公开(公告)日：2005-01-04

申请号：US10670288

申请日：2003-09-26

申请人： Masatsugu Arai ,  Ryujiro Udo ,  Naoyuki Tamura ,  Masanori Kadotani ,  Motohiko Yoshigai

发明人： Masatsugu Arai ,  Ryujiro Udo ,  Naoyuki Tamura ,  Masanori Kadotani ,  Motohiko Yoshigai

IPC分类号： H01J37/32 ,  H01L21/00 ,  H01L21/683 ,  H01J7/24

CPC分类号： H01L21/67109 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/6833

摘要： A plasma processing apparatus provided with a holding stage of a system in which a temperature of an electrode block is controlled so as to control the temperature of a semiconductor wafer. The electrode block is provided with at least first and second independent temperature controllers on inner and outer sides thereof, and a slit for suppressing heat transfer is provided in the electrode block between the first and second temperature controllers.

摘要翻译： 一种等离子体处理装置，其具有控制电极块的温度以控制半导体晶片的温度的系统的保持台。 电极块在其内侧和外侧设置有至少第一和第二独立温度控制器，并且在第一和第二温度控制器之间的电极块中设置用于抑制热传递的狭缝。

公开(公告)号：US06815228B2

公开(公告)日：2004-11-09

申请号：US09797601

申请日：2001-03-05

申请人： Tatehito Usui ,  Takashi Fujii ,  Motohiko Yoshigai ,  Tetsunori Kaji

发明人： Tatehito Usui ,  Takashi Fujii ,  Motohiko Yoshigai ,  Tetsunori Kaji

IPC分类号： H01L2166

CPC分类号： G01B11/0675 ,  G01B11/0625 ,  H01L21/67069 ,  H01L22/26 ,  Y10T436/106664

摘要： A standard pattern of a differential value of an interference light is set with respect to a predetermined film thickness of a first member to be processed. The standard pattern uses a wavelength as a parameter. Then, an intensity of an interference light of a second member to be processed, composed just like the first member, is measured with respect to each of a plurality of wavelengths so as to obtain a real pattern of an differential value of the measured interference light intensity. The real pattern also uses a wavelength as a parameter. Then, the film thickness of the second member is obtained according to the standard pattern and the real pattern of the differential value.

公开(公告)号：US06620737B2

公开(公告)日：2003-09-16

申请号：US09946509

申请日：2001-09-06

申请人： Go Saito ,  Masamichi Sakaguchi ,  Hitoshi Kobayashi ,  Motohiko Yoshigai ,  Satoshi Tani

发明人： Go Saito ,  Masamichi Sakaguchi ,  Hitoshi Kobayashi ,  Motohiko Yoshigai ,  Satoshi Tani

IPC分类号： H01L21302

CPC分类号： H01J37/32431 ,  H01J2237/3347 ,  H01L21/3065

摘要： The temperature of the specimen holder 6 in the vacuum container 1 is lowered with the thermal control unit 11 to adjust the temperature of the specimen 7 composed of a silicon substrate to a low temperature of 0° C. or lower. Then, trenches are formed in the specimen 7 by plasma etching using an etching gas comprising SF6 as the main constituent and optionally O2 as an additive. Thus, the etching rate and the yield can be increased in the trench formation in the silicon semiconductor substrate.

摘要翻译： 真空容器1中的试样保持器6的温度随着热控制单元11而降低，将由硅基板构成的试样7的温度调节至0℃以下的低温。 然后，通过使用包含SF 6作为主要成分和任选的O 2作为添加剂的蚀刻气体的等离子体蚀刻在样品7中形成沟槽。 因此，可以在硅半导体衬底中的沟槽形成中提高蚀刻速率和产率。

公开(公告)号：US06617255B2

公开(公告)日：2003-09-09

申请号：US09799485

申请日：2001-03-07

申请人： Takao Arase ,  Motohiko Yoshigai ,  Go Saito ,  Masamichi Sakaguchi ,  Hiroaki Ishimura ,  Takahiro Shimomura

发明人： Takao Arase ,  Motohiko Yoshigai ,  Go Saito ,  Masamichi Sakaguchi ,  Hiroaki Ishimura ,  Takahiro Shimomura

IPC分类号： H01L21302

CPC分类号： H01J37/32082 ,  H01J37/32477 ,  H01J37/32697 ,  H01J2237/022 ,  H01J2237/3341 ,  H01L21/31116 ,  H01L21/67069 ,  H01L29/6656

摘要： A plasma processing method is provided of processing a sample having a silicon nitride layer with high accuracy of size in anisotropy and excellent selectivity to a silicon oxide layer as underlayer. A mixed atmosphere of chlorine gas containing no fluorine with aluminum is converted into plasma in a plasma etching processing chamber and the sample having the silicon nitride layer is etched by using the plasma.

摘要翻译： 提供了一种等离子体处理方法，其处理具有氮化硅层的样品，其具有各向异性的高精度尺寸和对作为底层的氧化硅层的优异选择性。 在等离子体蚀刻处理室中将不含氟的氯气与铝的混合气氛转化为等离子体，并且通过使用等离子体蚀刻具有氮化硅层的样品。

公开(公告)号：US6046425A

公开(公告)日：2000-04-04

申请号：US474136

申请日：1995-06-07

申请人： Tetsunori Kaji ,  Takashi Fujii ,  Motohiko Yoshigai ,  Yoshinao Kawasaki ,  Masaharu Nishiumi

发明人： Tetsunori Kaji ,  Takashi Fujii ,  Motohiko Yoshigai ,  Yoshinao Kawasaki ,  Masaharu Nishiumi

IPC分类号： B23K10/00

CPC分类号： H01J37/3244 ,  H01J37/32559 ,  H01J37/32706

摘要： A plasma processing apparatus includes a plasma processing chamber defining a plasma region. The plasma processing chamber has an inner metallic portion defining at least a portion of the plasma region. The plasma processing apparatus also includes a sample table disposed in the plasma region for holding a sample to be subjected to plasma processing, elements for applying an AC voltage to the sample table, elements for generating a plasma, including a region of intense plasma, in the plasma region independently of the AC voltage applied to the sample table such that the AC voltage applied to the sample table has no effect on the generation of the plasma, and an insulator having a thickness of several tens to several hundreds of micrometers (.mu.m) disposed on the inner metallic portion of the plasma processing chamber in a neighborhood of the region of intense plasma.

摘要翻译： 等离子体处理装置包括限定等离子体区域的等离子体处理室。 该等离子体处理室具有限定等离子体区域的至少一部分的内部金属部分。 等离子体处理装置还包括设置在等离子体区域中的用于保持待进行等离子体处理的样品的样品台，用于向样品台施加AC电压的元件，用于产生包括强烈等离子体区域的等离子体的元件， 等离子体区域与施加到样品台的AC电压无关，使得施加到样品台的AC电压对等离子体的产生没有影响，并且具有几十至几百微米厚度的绝缘体（μm） ）设置在等离子体处理室的内部金属部分的强烈等离子体区域附近。

公开(公告)号：US5681424A

公开(公告)日：1997-10-28

申请号：US553435

申请日：1996-02-20

申请人： Go Saito ,  Motohiko Yoshigai ,  Kenji Fujimoto

发明人： Go Saito ,  Motohiko Yoshigai ,  Kenji Fujimoto

IPC分类号： H01J37/32 ,  H01L21/02 ,  H01L21/3213 ,  B08B7/00 ,  H01L21/00

CPC分类号： H01L21/02071 ,  H01J37/32862 ,  H01L21/32136 ,  Y10S438/905

摘要： A method of cleaning an etching chamber, with a high throughput, of a plasma processing apparatus for etching by use of hydrogen bromide (HBr) as an etching gas while holding a wafer on an electrode by electrostatic chuck. When the static charge on the wafer electrostatically chucked on the electrode is eliminated after the completion of the etching, O.sub.2 gas is introduced into the etching chamber from a gas flow-rate controller. A plasma of O.sub.2 gas is generated to cause the electric charge on the wafer to flow to the earth through the plasma, and at the same time, the interior of the etching chamber is cleaned.

摘要翻译： PCT No.PCT / JP94 / 00812 Sec。 371日期1996年2月20日 102（e）日期1996年2月20日PCT 1994年5月20日PCT PCT。 出版物WO94 / 28578 日期1994年12月8日利用静电卡盘将晶片保持在电极上的方法，通过使用溴化氢（HBr）作为蚀刻气体来清洗用于蚀刻的等离子体处理装置的高通量的蚀刻室。 当在蚀刻完成之后静电吸附在电极上的晶片上的静电电荷被消除，从气体流量控制器将氧气引入蚀刻室。 产生O 2气体的等离子体，使晶片上的电荷通过等离子体流到地球，同时，清洁蚀刻室的内部。