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公开(公告)号：US5290993A
公开(公告)日：1994-03-01
申请号：US890184
申请日：1992-05-29
IPC分类号： C23C14/34 , C23C16/50 , C23C16/511 , C23F4/00 , C30B25/02 , C30B25/08 , H01J37/32 , H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/31 , H05H1/46 , B23K9/00
CPC分类号： H01J37/3244 , H01J37/32192 , H01J37/32559 , H01J37/32706 , H05H1/46
摘要： A microwave plasma processing device is composed of a vacuum chamber which is evacuated to a predetermined pressure and into which processing gas is introduced; a sample table disposed in the vacuum chamber to which an AC voltage is applied; a microwave generating apparatus which generates microwaves and introduces the microwaves towards a surface to be processed of a sample located on the sample table; a magnetic field generating apparatus for generating a magnetic field in the vacuum chamber; an insulator disposed on a part exposed to plasma produced in the vacuum chamber; and a ground electrode disposed at a place which is on a microwave introduction side with respect to the surface of the sample table on which the sample is placed. The ground electrode arranged in an insulator exposed to the plasma is protected by covering the surface of the ground electrode by an insulating film which is so thin that application of an AC voltage is not prevented. In this way the AC voltage is applied at a place where efficiency is high, and stable plasma processing can be effected.
摘要翻译： 微波等离子体处理装置由抽真空至预定压力的真空室构成，并将加工气体引入该真空室; 设置在施加有交流电压的真空室中的样品台; 微波产生装置，其产生微波并将微波引导到位于样品台上的样品待处理表面; 用于在真空室中产生磁场的磁场产生装置; 设置在暴露于在真空室中产生的等离子体的部分上的绝缘体; 以及设置在相对于其上放置有样品的样品台的表面的微波引入侧的位置处的接地电极。 布置在暴露于等离子体的绝缘体中的接地电极通过用非常薄的绝缘膜覆盖接地电极的表面来保护，从而不会阻止施加AC电压。 以这种方式，在效率高的地方施加AC电压，并且可以实现稳定的等离子体处理。
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2.发明授权Plasma processing apparatus having insulator disposed on inner surface of plasma generating chamber 失效具有设置在等离子体发生室的内表面上的绝缘体的等离子体处理装置
公开(公告)号：US6046425A
公开(公告)日：2000-04-04
申请号：US474136
申请日：1995-06-07
IPC分类号： B23K10/00
CPC分类号： H01J37/3244 , H01J37/32559 , H01J37/32706
摘要： A plasma processing apparatus includes a plasma processing chamber defining a plasma region. The plasma processing chamber has an inner metallic portion defining at least a portion of the plasma region. The plasma processing apparatus also includes a sample table disposed in the plasma region for holding a sample to be subjected to plasma processing, elements for applying an AC voltage to the sample table, elements for generating a plasma, including a region of intense plasma, in the plasma region independently of the AC voltage applied to the sample table such that the AC voltage applied to the sample table has no effect on the generation of the plasma, and an insulator having a thickness of several tens to several hundreds of micrometers (.mu.m) disposed on the inner metallic portion of the plasma processing chamber in a neighborhood of the region of intense plasma.
摘要翻译： 等离子体处理装置包括限定等离子体区域的等离子体处理室。 该等离子体处理室具有限定等离子体区域的至少一部分的内部金属部分。 等离子体处理装置还包括设置在等离子体区域中的用于保持待进行等离子体处理的样品的样品台，用于向样品台施加AC电压的元件，用于产生包括强烈等离子体区域的等离子体的元件， 等离子体区域与施加到样品台的AC电压无关，使得施加到样品台的AC电压对等离子体的产生没有影响，并且具有几十至几百微米厚度的绝缘体（μm） ）设置在等离子体处理室的内部金属部分的强烈等离子体区域附近。
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3.发明授权
公开(公告)号：US5432315A
公开(公告)日：1995-07-11
申请号：US203035
申请日：1994-02-28
CPC分类号： H01J37/3244 , H01J37/32192 , H01J37/32559 , H01J37/32706 , H05H1/46
摘要： A microwave plasma processing apparatus includes a vacuum chamber which is evacuated to a predetermined pressure and into which processing gas is introduced, a sample table, disposed in the vacuum chamber, to which an AC voltage is applied, a microwave generating device for generating microwaves and introducing the microwaves towards a surface to be processed of a sample located on the sample table, a magnetic field generating device for generating a magnetic field in the vacuum chamber, an insulator disposed on a part of the vacuum chamber exposed to a plasma produced in the vacuum chamber by interaction of the processing gas, the microwaves, and the magnetic field, and a ground electrode disposed in the vacuum chamber at a place which is on a microwave introduction side of the vacuum chamber with respect to the surface of the sample table on which the sample is placed, a surface of the ground electrode being covered by a semiconducting thin film.
摘要翻译： 微波等离子体处理装置包括真空室，其被抽真空至预定压力并被加入到处理气体中，设置在施加有交流电压的真空室中的样品台，用于产生微波的微波产生装置， 将微波引导到位于样品台上的样品的待处理表面，用于在真空室中产生磁场的磁场产生装置，设置在暴露于等离子体中产生的等离子体的真空室的一部分上的绝缘体 通过处理气体，微波和磁场的相互作用的真空室和设置在真空室中相对于样品台的表面在微波引入侧的位置处的真空室中的接地电极 样品被放置，接地电极的表面被半导体薄膜覆盖。
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4.发明授权Film thickness measuring method of member to be processed using emission spectroscopy and processing method of the member using the measuring method 有权使用发射光谱处理的部件的膜厚测量方法和使用该测量方法的部件的处理方法公开(公告)号：US07230720B2
公开(公告)日：2007-06-12
申请号：US11256967
申请日：2005-10-25
CPC分类号： G01B11/0675 , G01B11/0625 , H01L21/67069 , H01L22/26 , Y10T436/106664
摘要： A standard pattern of a differential value of an interference light is set with respect to a predetermined film thickness of a first member to be processed. The standard pattern uses a wavelength as a parameter. Then, an intensity of an interference light of a second member to be processed, composed just like the first member, is measured with respect to each of a plurality of wavelengths so as to obtain a real pattern of an differential value of the measured interference light intensity. The real pattern also uses a wavelength as a parameter. Then, the film thickness of the second member is obtained according to the standard pattern and the real pattern of the differential value.
摘要翻译： 干涉光的微分值的标准图案相对于待处理的第一部件的预定膜厚设定。 标准图案使用波长作为参数。 然后，对于多个波长中的每一个测量与第一构件正好相同的待处理的第二构件的干涉光的强度，以获得所测量的干涉光的差分值的实际图案 强度。 实际图案也使用波长作为参数。 然后，根据标准图案和差分值的实际图案获得第二构件的膜厚度。
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5.发明授权Method and apparatus for determining endpoint of semiconductor element fabricating process 有权用于确定半导体元件制造工艺的端点的方法和装置公开(公告)号：US06903826B2
公开(公告)日：2005-06-07
申请号：US09946504
申请日：2001-09-06
CPC分类号： H01J37/32963 , G01B11/0675 , H01L22/26
摘要： Standard patterns of differential values of interference light that correspond to a predetermined step height of the first material being processed and standard patterns of differential values of interference light that correspond to a predetermined remaining mask layer thickness of the material are set. These standard patterns use wavelengths as parameters. Then, the intensities of interference light of multiple wavelengths are measured for a second material that has the same structure as the first material. Actual patterns with wavelength as parameter are determined from differential values of the measured interference light intensities. Based on the standard patterns and the actual patterns of the differential values, the step height and the remaining mask layer thickness of the second material are determined.
摘要翻译： 对应于正在处理的第一材料的预定台阶高度的干涉光的差分值的标准图案和对应于材料的预定剩余掩模层厚度的干涉光的差分值的标准图案被设置。 这些标准模式使用波长作为参数。 然后，测量具有与第一材料相同结构的第二材料的多个波长的干涉光的强度。 具有波长作为参数的实际图案由所测量的干涉光强度的差分值确定。 基于标准图案和差分值的实际图案，确定第二材料的台阶高度和剩余掩模层厚度。
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6.发明申请Film thickness measuring method of member to be processed using emission spectroscopy and processing method of the member using the measuring method 有权使用发射光谱处理的部件的膜厚测量方法和使用该测量方法的部件的处理方法公开(公告)号：US20050018207A1
公开(公告)日：2005-01-27
申请号：US10918367
申请日：2004-08-16
CPC分类号： G01B11/0675 , G01B11/0625 , H01L21/67069 , H01L22/26 , Y10T436/106664
摘要： A standard pattern of a differential value of an interference light is set with respect to a predetermined film thickness of a first member to be processed. The standard pattern uses a wavelength as a parameter. Then, an intensity of an interference light of a second member to be processed, composed just like the first member, is measured with respect to each of a plurality of wavelengths so as to obtain a real pattern of an differential value of the measured interference light intensity. The real pattern also uses a wavelength as a parameter. Then, the film thickness of the second member is obtained according to the standard pattern and the real pattern of the differential value.
摘要翻译： 干涉光的微分值的标准图案相对于待处理的第一部件的预定膜厚设定。 标准图案使用波长作为参数。 然后，对于多个波长中的每一个测量与第一构件正好相同的待处理的第二构件的干涉光的强度，以获得所测量的干涉光的差分值的实际图案 强度。 实际图案也使用波长作为参数。 然后，根据标准图案和差分值的实际图案获得第二构件的膜厚度。
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7.发明申请Method and apparatus for determining endpoint of semiconductor element fabricating process 有权用于确定半导体元件制造工艺的端点的方法和装置公开(公告)号：US20060132798A1
公开(公告)日：2006-06-22
申请号：US11340559
申请日：2006-01-27
IPC分类号： G01B11/02
CPC分类号： H01J37/32963 , G01B11/0675 , H01L22/26
摘要： Standard patterns of differential values of interference light that correspond to a predetermined step height of the first material being processed and standard patterns of differential values of interference light that correspond to a predetermined remaining mask layer thickness of the material are set. These standard patterns use wavelengths as parameters. Then, the intensities of interference light of multiple wavelengths are measured for a second material that has the same structure as the first material. Actual patterns with wavelength as parameter are determined from differential values of the measured interference light intensities. Based on the standard patterns and the actual patterns of the differential values, the step height and the remaining mask layer thickness of the second material are determined.
摘要翻译： 对应于正在处理的第一材料的预定台阶高度的干涉光的差分值的标准图案和对应于材料的预定剩余掩模层厚度的干涉光的差分值的标准图案被设置。 这些标准模式使用波长作为参数。 然后，测量具有与第一材料相同结构的第二材料的多个波长的干涉光的强度。 具有波长作为参数的实际图案由所测量的干涉光强度的差分值确定。 基于标准图案和差分值的实际图案，确定第二材料的台阶高度和剩余掩模层厚度。
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公开(公告)号：US07009715B2
公开(公告)日：2006-03-07
申请号：US10978412
申请日：2004-11-02
IPC分类号： G01B9/02
CPC分类号： H01J37/32963 , G01B11/0675 , H01L22/26
摘要： Standard patterns of differential values of interference light that correspond to a predetermined step height of the first material being processed and standard patterns of differential values of interference light that correspond to a predetermined remaining mask layer thickness of the material are set. These standard patterns use wavelengths as parameters. Then, the intensities of interference light of multiple wavelengths are measured for a second material that has the same structure as the first material. Actual patterns with wavelength as parameter are determined from differential values of the measured interference light intensities. Based on the standard patterns and the actual patterns of the differential values, the step height and the remaining mask layer thickness of the second material are determined.
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9.发明申请Method and apparatus for determining endpoint of semiconductor element fabricating process and method and apparatus for processing member to be processed 有权用于确定半导体元件制造工艺的端点的方法和装置以及用于处理待处理部件的方法和装置公开(公告)号：US20050062982A1
公开(公告)日：2005-03-24
申请号：US10978412
申请日：2004-11-02
CPC分类号： H01J37/32963 , G01B11/0675 , H01L22/26
摘要： Standard patterns of differential values of interference light that correspond to a predetermined step height of the first material being processed and standard patterns of differential values of interference light that correspond to a predetermined remaining mask layer thickness of the material are set. These standard patterns use wavelengths as parameters. Then, the intensities of interference light of multiple wavelengths are measured for a second material that has the same structure as the first material. Actual patterns with wavelength as parameter are determined from differential values of the measured interference light intensities. Based on the standard patterns and the actual patterns of the differential values, the step height and the remaining mask layer thickness of the second material are determined.
摘要翻译： 对应于正在处理的第一材料的预定台阶高度的干涉光的差分值的标准图案和对应于材料的预定剩余掩模层厚度的干涉光的差分值的标准图案被设置。 这些标准模式使用波长作为参数。 然后，测量具有与第一材料相同结构的第二材料的多个波长的干涉光的强度。 具有波长作为参数的实际图案由所测量的干涉光强度的差分值确定。 基于标准图案和差分值的实际图案，确定第二材料的台阶高度和剩余掩模层厚度。
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10.发明授权公开(公告)号：US07126697B2
公开(公告)日：2006-10-24
申请号：US11340559
申请日：2006-01-27
IPC分类号： G01B11/02
CPC分类号： H01J37/32963 , G01B11/0675 , H01L22/26
摘要： Standard patterns of differential values of interference light that correspond to a predetermined step height of the first material being processed and standard patterns of differential values of interference light that correspond to a predetermined remaining mask layer thickness of the material are set. These standard patterns use wavelengths as parameters. Then, the intensities of interference light of multiple wavelengths are measured for a second material that has the same structure as the first material. Actual patterns with wavelength as parameter are determined from differential values of the measured interference light intensities. Based on the standard patterns and the actual patterns of the differential values, the step height and the remaining mask layer thickness of the second material are determined.
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