公开(公告)号：US20060024940A1

公开(公告)日：2006-02-02

申请号：US10710675

申请日：2004-07-28

申请人： Toshiharu Furukawa ,  David Horak ,  Charles Koburger

发明人： Toshiharu Furukawa ,  David Horak ,  Charles Koburger

IPC分类号： H01L21/44

CPC分类号： H01L21/28518 ,  H01L21/76895 ,  H01L21/76897 ,  H01L27/11 ,  H01L27/1104

摘要： A borderless contact structure and method of fabricating the structure, the method including: (a) providing a substrate; (b) forming a polysilicon line on the substrate, the polysilicon line having sidewalls; (c) forming an insulating sidewall layer on the sidewalls of the polysilicon line; (d) removing a portion of the polysilicon line and a corresponding portion of the insulating sidewall layer in a contact region of the polysilicon line; and (e) forming a silicide layer on the sidewall of the polysilicon line in the contact region. Also an SRAM cell using the borderless contact structure and a method of fabricating the SRAM cell.

公开(公告)号：US20050145838A1

公开(公告)日：2005-07-07

申请号：US10707726

申请日：2004-01-07

申请人： Toshiharu Furukawa ,  Steven Holmes ,  Mark Hakey ,  David Horak ,  Charles Koburger ,  Peter Mitchell ,  Larry Nesbit

发明人： Toshiharu Furukawa ,  Steven Holmes ,  Mark Hakey ,  David Horak ,  Charles Koburger ,  Peter Mitchell ,  Larry Nesbit

IPC分类号： H01L29/06 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786 ,  H01L51/30

CPC分类号： H01L51/057 ,  B82Y10/00 ,  H01L51/0048

摘要： A field effect transistor employs a vertically oriented carbon nanotube as the transistor body, the nanotube being formed by deposition within a vertical aperture, with an optional combination of several nanotubes in parallel to produced quantized current drive and an optional change in the chemical composition of the carbon material at the top or at the bottom to suppress short channel effects.

摘要翻译： 场效应晶体管采用垂直取向的碳纳米管作为晶体管本体，纳米管通过在垂直孔内沉积而形成，并且可以并联多个纳米管的任意组合以产生量子化电流驱动，并且可选择地改变 碳材料在顶部或底部以抑制短渠道效应。

公开(公告)号：US20080117671A1

公开(公告)日：2008-05-22

申请号：US12018915

申请日：2008-01-24

申请人： Toshiharu Furukawa ,  Mark Hakey ,  Steven Holmes ,  David Horak ,  Charles Koburger

发明人： Toshiharu Furukawa ,  Mark Hakey ,  Steven Holmes ,  David Horak ,  Charles Koburger

IPC分类号： G11C11/34 ,  G11C7/00

CPC分类号： G11C13/025 ,  B82Y10/00 ,  H01L51/0048 ,  H01L51/0512

摘要： Structures for memory devices. The structure includes (a) a substrate; (b) a first and second electrode regions on the substrate; and (c) a third electrode region disposed between the first and second electrode regions. In response to a first write voltage potential applied between the first and third electrode regions, the third electrode region changes its own shape, such that in response to a pre-specified read voltage potential subsequently applied between the first and third electrode regions, a sensing current flows between the first and third electrode regions. In addition, in response to a second write voltage potential being applied between the second and third electrode regions, the third electrode region changes its own shape such that in response to the pre-specified read voltage potential applied between the first and third electrode regions, said sensing current does not flow between the first and third electrode regions.

摘要翻译： 存储器件结构。 该结构包括（a）基底; （b）基板上的第一和第二电极区域; 和（c）设置在第一和第二电极区之间的第三电极区。 响应于施加在第一和第三电极区域之间的第一写入电压电位，第三电极区域改变其自身形状，使得响应于随后施加在第一和第三电极区域之间的预先指定的读取电压电势，感测 电流在第一和第三电极区域之间流动。 此外，响应于施加在第二和第三电极区域之间的第二写入电压电位，第三电极区域改变其自身形状，使得响应于施加在第一和第三电极区域之间的预先设定的读取电压电位， 所述感测电流不在第一和第三电极区域之间流动。

公开(公告)号：US20080057671A1

公开(公告)日：2008-03-06

申请号：US11927135

申请日：2007-10-29

申请人： Toshiharu Furukawa ,  Robert Gauthier ,  David Horak ,  Charles Koburger ,  Jack Mandelman ,  William Tonti

发明人： Toshiharu Furukawa ,  Robert Gauthier ,  David Horak ,  Charles Koburger ,  Jack Mandelman ,  William Tonti

IPC分类号： H01L21/762

CPC分类号： H01L21/76237 ,  H01L21/26533 ,  H01L21/76213 ,  H01L21/76229 ,  H01L21/76232 ,  H01L21/823878 ,  H01L27/0921 ,  H01L29/1087 ,  H01L29/78

摘要： Semiconductor structures and methods for suppressing latch-up in bulk CMOS devices. The semiconductor structure comprises a shaped-modified isolation region that is formed in a trench generally between two doped wells of the substrate in which the bulk CMOS devices are fabricated. The shaped-modified isolation region may comprise a widened dielectric-filled portion of the trench, which may optionally include a nearby damage region, or a narrowed dielectric-filled portion of the trench that partitions a damage region between the two doped wells. Latch-up may also be suppressed by providing a lattice-mismatched layer between the trench base and the dielectric filler in the trench.

摘要翻译： 用于抑制大量CMOS器件中的闩锁的半导体结构和方法。 该半导体结构包括成形修饰的隔离区，其形成在通常在制造本体CMOS器件的衬底的两个掺杂阱之间的沟槽中。 成形改进的隔离区域可以包括沟槽的加宽的电介质填充部分，其可以可选地包括分隔两个掺杂阱之间的损伤区域的沟槽的附近损伤区域或狭窄的电介质填充部分。 也可以通过在沟槽中的沟槽基底和介电填料之间提供晶格不匹配的层来抑制闩锁。

公开(公告)号：US20080042287A1

公开(公告)日：2008-02-21

申请号：US11924894

申请日：2007-10-26

申请人： Toshiharu Furukawa ,  Mark Hakey ,  Steven Holmes ,  David Horak ,  Charles Koburger ,  Peter Mitchell

发明人： Toshiharu Furukawa ,  Mark Hakey ,  Steven Holmes ,  David Horak ,  Charles Koburger ,  Peter Mitchell

IPC分类号： H01L23/52

CPC分类号： H01L21/7685 ,  B82Y10/00 ,  H01L21/32051 ,  H01L21/76838 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/53276 ,  H01L51/0048 ,  H01L51/0052 ,  H01L2221/1094 ,  H01L2924/0002 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/778 ,  Y10S977/842 ,  H01L2924/00

摘要： A conductive layer in an integrated circuit is formed as a sandwich having multiple sublayers, including at least one sublayer of oriented carbon nanotubes. The conductive layer sandwich preferably contains two sublayers of carbon nanotubes, in which the carbon nanotube orientation in one sublayer is substantially perpendicular to that of the other layer. The conductive layer sandwich preferably contains one or more additional sublayers of a conductive material, such as a metal. In one embodiment, oriented carbon nanotubes are created by forming a series of parallel surface ridges, covering the top and one side of the ridges with a catalyst inhibitor, and growing carbon nanotubes horizontally from the uncovered vertical sides of the ridges. In another embodiment, oriented carbon nanotubes are grown on the surface of a conductive material in the presence of a directional flow of reactant gases and a catalyst.

摘要翻译： 集成电路中的导电层形成为具有多个子层的夹层，包括至少一个定向碳纳米管子层。 导电层夹层优选含有碳纳米管的两个子层，其中一个子层中的碳纳米管取向基本上垂直于另一层的碳纳米管取向。 导电层夹层优选地包含一种或多种另外的导电材料的子层，例如金属。 在一个实施方案中，通过形成一系列平行的表面脊，通过用催化剂抑制剂覆盖脊的顶部和一侧并从脊的未被覆盖的垂直侧水平生长碳纳米管来产生定向碳纳米管。 在另一个实施方案中，在反应物气体和催化剂的定向流的存在下，在导电材料的表面上生长取向的碳纳米管。

公开(公告)号：US20070296947A1

公开(公告)日：2007-12-27

申请号：US11899085

申请日：2007-09-04

申请人： Steven Holmes ,  Toshiharu Furukawa ,  Charles Koburger ,  Naim Moumen

发明人： Steven Holmes ,  Toshiharu Furukawa ,  Charles Koburger ,  Naim Moumen

IPC分类号： G03B27/42

CPC分类号： G03F7/2041 ,  G03F7/11 ,  G03F7/70341 ,  G03F7/70958

摘要： An immersion lithography system is provided which includes an optical source operable to produce light having a nominal wavelength and an optical imaging system. The optical imaging system has an optical element in an optical path from the optical source to an article to be patterned thereby. The optical element has a face which is adapted to contact a liquid occupying a space between the face and the article. The optical element includes a material which is degradable by the liquid and a protective coating which covers the degradable material at the face for protecting the face from the liquid, the protective coating being transparent to the light, stable when exposed to the light and stable when exposed to the liquid.

摘要翻译： 提供了一种浸没光刻系统，其包括可操作以产生具有标称波长的光和光学成像系统的光源。 光学成像系统具有从光源到待图案化的制品的光路中的光学元件。 光学元件具有适于接触占据面部和制品之间的空间的液体的面。 光学元件包括可被液体降解的材料和覆盖面上的可降解材料以保护面部免受液体的保护涂层，保护涂层对于光是透明的，当暴露于光时稳定，并且当稳定时 暴露于液体。

公开(公告)号：US20070228429A1

公开(公告)日：2007-10-04

申请号：US11757660

申请日：2007-06-04

申请人： Toshiharu Furukawa ,  Mark Hakey ,  Steven Holmes ,  David Horak ,  Charles Koburger

发明人： Toshiharu Furukawa ,  Mark Hakey ,  Steven Holmes ,  David Horak ,  Charles Koburger

IPC分类号： H01L29/78

CPC分类号： H01L29/4983 ,  H01L29/4908 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66772 ,  H01L29/7833 ,  H01L29/78621 ,  Y10S977/742 ,  Y10S977/847

摘要： A method of fabricating a structure and fabricating related semiconductor transistors and novel semiconductor transistor structures. The method of fabricating the structure includes: providing a substrate having a top surface; forming an island on the top surface of the substrate, a top surface of the island parallel to the top surface of the substrate, a sidewall of the island extending between the top surface of the island and the top surface of the substrate; forming a plurality of carbon nanotubes on the sidewall of the island; and performing an ion implantation, the ion implantation penetrating into the island and blocked from penetrating into the substrate in regions of the substrate masked by the island and the carbon nanotubes.

摘要翻译： 一种制造结构并制造相关半导体晶体管和新型半导体晶体管结构的方法。 制造该结构的方法包括：提供具有顶表面的基底; 在所述基板的顶表面上形成岛，所述岛的顶表面平行于所述基底的顶表面，所述岛的侧壁在所述岛的顶表面和所述基底的顶表面之间延伸; 在岛的侧壁上形成多个碳纳米管; 并且进行离子注入，所述离子注入在所述岛状体和所述碳纳米管所掩盖的基板的区域中贯穿所述岛并阻止其侵入所述基板。

公开(公告)号：US20070215224A1

公开(公告)日：2007-09-20

申请号：US11276772

申请日：2006-03-14

申请人： Toshiharu Furukawa ,  Mark Hakey ,  Steven Holmes ,  David Horak ,  Charles Koburger

发明人： Toshiharu Furukawa ,  Mark Hakey ,  Steven Holmes ,  David Horak ,  Charles Koburger

IPC分类号： F15C1/06

CPC分类号： F15C1/06 ,  F04B43/043 ,  F15C5/00 ,  F16K99/0001 ,  F16K99/0015 ,  F16K99/0051 ,  F16K2099/0074 ,  F16K2099/0094 ,  Y10T29/49236 ,  Y10T29/49412 ,  Y10T137/2224

摘要： Micro-valves and micro-pumps and methods of fabricating micro-valves and micro-pumps. The micro-valves and micro-pumps include electrically conductive diaphragms fabricated from electrically conductive nano-fibers. Fluid flow through the micro-valves and pumping action of the micro-pumps is accomplished by applying electrostatic forces to the electrically conductive diaphragms.

摘要翻译： 微型阀门和微型泵以及制造微型阀门和微型泵的方法。 微型阀和微型泵包括由导电纳米纤维制成的导电隔膜。 通过微型阀的流体流动和微型泵的泵送作用是通过将静电力施加到导电隔膜来实现的。

公开(公告)号：US20070207604A1

公开(公告)日：2007-09-06

申请号：US11745610

申请日：2007-05-08

申请人： Toshiharu Furukawa ,  Mark Hakey ,  Steven Holmes ,  David Horak ,  Charles Koburger

发明人： Toshiharu Furukawa ,  Mark Hakey ,  Steven Holmes ,  David Horak ,  Charles Koburger

IPC分类号： H01L21/3205

CPC分类号： H01L21/76885 ,  H01L21/76816 ,  H01L21/7682 ,  H01L21/76837 ,  H01L21/76852 ,  H01L21/76862 ,  H01L21/76871 ,  H01L21/76874 ,  H01L23/5283 ,  H01L23/53209 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： Conductive sidewall spacer structures are formed using a method that patterns structures (mandrels) and activates the sidewalls of the structures. Metal ions are attached to the sidewalls of the structures and these metal ions are reduced to form seed material. The structures are then trimmed and the seed material is plated to form wiring on the sidewalls of the structures.

摘要翻译： 使用图案结构（心轴）并激活结构的侧壁的方法形成导电侧壁间隔结构。 金属离子附着在结构的侧壁上，这些金属离子被还原成晶种。 然后对结构进行修整，并且种子材料被电镀以在结构的侧壁上形成布线。

公开(公告)号：US20070170517A1

公开(公告)日：2007-07-26

申请号：US11340342

申请日：2006-01-26

申请人： Toshiharu Furukawa ,  Charles Koburger ,  Jack Mandelman

发明人： Toshiharu Furukawa ,  Charles Koburger ,  Jack Mandelman

IPC分类号： H01L29/76

CPC分类号： H01L21/76237 ,  H01L21/823878 ,  H01L27/0921 ,  H01L29/1087 ,  H01L29/78

摘要： In a first aspect, a first apparatus is provided. The first apparatus is semiconductor device that includes (1) a shallow trench isolation (STI) oxide region; (2) a first metal-oxide-semiconductor field-effect transistor (MOSFET) coupled to a first side of the STI oxide region; (3) a second MOSFET coupled to a second side of the STI oxide region, wherein portions of the first and second MOSFETs form first and second bipolar junction transistors (BJTs) which are coupled into a loop; and (4) a dopant-implanted region below the STI oxide region, wherein the dopant-implanted region forms a portion of the BJT loop and is adapted to reduce a gain of the loop. Numerous other aspects are provided.

摘要翻译： 在第一方面中，提供了一种第一装置。 第一装置是包括（1）浅沟槽隔离（STI）氧化物区域的半导体器件; （2）耦合到所述STI氧化物区域的第一侧的第一金属氧化物半导体场效应晶体管（MOSFET）; （3）耦合到所述STI氧化物区域的第二侧的第二MOSFET，其中所述第一和第二MOSFET的部分形成耦合到环路中的第一和第二双极结型晶体管（BJT）; 和（4）STI氧化物区域下面的掺杂剂注入区域，其中掺杂剂注入区域形成BJT环路的一部分并且适于减小环路的增益。 提供了许多其他方面。