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    Resist polymer, resist composition and patterning process
    71.
    发明授权
    Resist polymer, resist composition and patterning process 有权
    抗蚀聚合物，抗蚀剂组成和图案化工艺

    公开(公告)号：US07135270B2

    公开(公告)日：2006-11-14

    申请号：US10911676

    申请日：2004-08-05

    申请人： Takeru Watanabe ,  Tsunehiro Nishi ,  Junji Tsuchiya ,  Kenji Funatsu ,  Koji Hasegawa

    发明人： Takeru Watanabe ,  Tsunehiro Nishi ,  Junji Tsuchiya ,  Kenji Funatsu ,  Koji Hasegawa

    IPC分类号： G03C1/73 ,  G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  C08F124/00

    CPC分类号： C08F220/18 ,  C08F220/26 ,  G03F7/0397 ,  Y10S430/111

    摘要： A polymer comprising recurring units of formulae (1), (2), (3) and (4) increases a dissolution rate in an alkali developer under the action of an acid. R1, R2, R3 and R6 are H or CH3, R4 and R5 are H or OH, X is a tertiary exo-alkyl group having a bicyclo[2.2.1]heptane framework, represented by any of formulae (X-1) to (X-4): wherein R7 is C1–C10 alkyl, and Y is a tertiary alkyl group having an adamantane structure. A resist composition comprising the inventive polymer has a sensitivity to high-energy radiation, improved resolution and minimized proximity bias and lends itself to micropatterning with electron beams or deep UV for VLSI fabrication.

    摘要翻译： 包含式（1），（2），（3）和（4）的重复单元的聚合物在酸的作用下增加碱显影剂中的溶解速率。 R 1，R 2，R 3和R 6是H或CH 3 N >，R 4和R 5是H或OH，X是具有双环[2.2.1]庚烷骨架的叔外烷基，由式 （X-1）至（X-4）：其中R 7为C 1 -C 10烷基，Y为叔烷基 具有金刚烷结构的组。 包含本发明聚合物的抗蚀剂组合物对高能量辐射具有敏感性，改进的分辨率和最小化的接近偏压，并且借助于用于VLSI制造的电子束或深UV的微图案化。

    PATTERNING PROCESS
    73.
    发明申请
    PATTERNING PROCESS 审中-公开
    绘图过程

    公开(公告)号：US20100086878A1

    公开(公告)日：2010-04-08

    申请号：US12575097

    申请日：2009-10-07

    申请人： Jun Hatakeyama ,  Masashi Iio ,  Takeru Watanabe ,  Takeshi Kinsho ,  Toshinobu Ishihara

    发明人： Jun Hatakeyama ,  Masashi Iio ,  Takeru Watanabe ,  Takeshi Kinsho ,  Toshinobu Ishihara

    IPC分类号： G03F7/20

    CPC分类号： G03F7/405 ,  G03F7/0035 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/0338

    摘要： A pattern is formed by applying a first positive resist material onto a substrate, heat treating, exposing to high-energy radiation, heat treating, then developing with a developer to form a first resist pattern; applying a protective coating solution comprising a hydrolyzable silicon compound having an amino group onto the first resist pattern and the substrate, heating to form a protective coating; and applying a second positive resist material thereon, heat treating, exposing to high-energy radiation, heat treating, and then developing with a developer to form a second resist pattern. By forming the second pattern in a space portion of the first pattern, this double patterning reduces the pattern pitch to one half.

    摘要翻译： 通过将第一正性抗蚀剂材料施加到基底上，热处理，暴露于高能量辐射，热处理，然后用显影剂显影以形成第一抗蚀剂图案，形成图案; 将包含具有氨基的可水解硅化合物的保护涂层溶液施加到第一抗蚀剂图案和基底上，加热形成保护涂层; 并在其上施加第二正性抗蚀剂材料，热处理，暴露于高能量辐射，热处理，然后用显影剂显影以形成第二抗蚀剂图案。 通过在第一图案的空间部分中形成第二图案，该双重图案将图案间距减小到一半。

    Alicyclic methacrylate having oxygen substituent group on α-methyl
    74.
    发明授权
    Alicyclic methacrylate having oxygen substituent group on α-methyl 有权
    在α-甲基上具有氧取代基的脂环族甲基丙烯酸酯

    公开(公告)号：US07041846B2

    公开(公告)日：2006-05-09

    申请号：US10791843

    申请日：2004-03-04

    申请人： Takeru Watanabe ,  Jun Hatakeyama ,  Takeshi Kinsho

    发明人： Takeru Watanabe ,  Jun Hatakeyama ,  Takeshi Kinsho

    IPC分类号： C07C69/74 ,  C07C69/75 ,  C07C69/753

    CPC分类号： C07D307/93 ,  C07C69/732 ,  C07C69/734 ,  C07C2601/08 ,  C07C2603/68 ,  C07C2603/74 ,  G03F7/0397

    摘要： Alicyclic methacrylate compounds having an oxygen substituent group on their α-methyl group, represented by formula (1), are novel wherein R1 is H or C1–C10 alkyl which may contain a halogen atom, hydroxyl group, ether bond, carbonyl group, carboxyl group or cyano group, and R2 is a monovalent C3–C20 organic group having an alicyclic structure. Polymers prepared from these alicyclic methacrylate compounds have improved transparency, especially at the exposure wavelength of an excimer laser, and improved dry etching resistance. Resist compositions comprising the polymers are sensitive to high-energy radiation, show a high resolution, allow smooth development, lend themselves to micropatterning, and are thus suitable as micropatterning material for VLSI fabrication

    摘要翻译： 由式（1）表示的在其α-甲基上具有氧取代基的脂环族甲基丙烯酸酯化合物是新的，其中R 1是H或C 1 -C 3 可以含有卤素原子，羟基，醚键，羰基，羧基或氰基的烷基，R 2是一价C 3〜 具有脂环结构的-C 20官能团。 由这些脂环族甲基丙烯酸酯化合物制备的聚合物具有改善的透明度，特别是在准分子激光的曝光波长下，以及改进的耐干蚀刻性。 包含聚合物的抗蚀剂组合物对高能辐射敏感，显示高分辨率，允许平滑显影，适合于微图案化，因此适用于VLSI制造的微图案材料

    Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process
    77.
    发明申请
    Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process 有权
    阻止含有热酸发生剂的下层组合物，抗下层薄膜形成基材和图案化工艺

    公开(公告)号：US20100119970A1

    公开(公告)日：2010-05-13

    申请号：US12588590

    申请日：2009-10-20

    申请人： Youichi Ohsawa ,  Jun Hatakeyama ,  Takeru Watanabe ,  Takeshi Kinsho

    发明人： Youichi Ohsawa ,  Jun Hatakeyama ,  Takeru Watanabe ,  Takeshi Kinsho

    IPC分类号： G03F7/20 ,  C07C309/19 ,  C07C309/04 ,  G03F7/004

    CPC分类号： C07C381/12 ,  C07C309/12 ,  C07C2603/74 ,  C07D307/93 ,  G03F7/0045 ,  G03F7/091

    摘要： There is disclosed a resist lower-layer composition configured to be used by a multi-layer resist method used in lithography to form a layer lower than a photoresist layer acting as a resist upper layer film, wherein the resist lower-layer composition becomes insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and wherein the resist lower-layer composition comprises, at least, a thermal acid generator for generating an acid represented by the general formula (1) by heating at a temperature of 100° C. or higher. RCOO—CH2CF2SO3−H+  (1) There can be provided a resist lower-layer composition in a multi-layer resist method (particularly, a two-layer resist method and a three-layer resist method), which composition is used to form a layer lower than a photoresist layer acting as a resist upper layer film, which composition becomes insoluble or poorly-soluble in an alkaline developer after formation of the lower layer, and which composition is capable of forming a resist lower layer film, intermediate-layered film, and the like having a higher anti-poisoning effect and exhibiting a lower load to the environment.

    摘要翻译： 公开了一种抗蚀剂下层组合物，其被配置为通过在光刻中使用的多层抗蚀剂方法使用以形成低于作为抗蚀剂上层膜的光致抗蚀剂层的层，其中抗蚀剂下层组合物变得不溶或 形成下层后在碱性显影剂中难以溶解，并且其中抗蚀剂下层组合物至少包含通过在100℃的温度下加热产生由通式（1）表示的酸的热酸发生剂 ℃以上。 RCOO-CH 2 CF 2 SO 3 -H +（1）可以提供多层抗蚀剂法（特别是双层抗蚀剂法和三层抗蚀剂法）中的抗蚀剂下层组合物，该组合物用于形成 层低于作为抗蚀剂上层膜的光致抗蚀剂层，该组合物在形成下层之后在碱性显影剂中变得不溶或难溶，并且该组合物能够形成抗蚀剂下层膜，中间层膜 等具有较高的抗中毒作用并且对环境具有较低的负荷。

    Novel epoxy compounds having an alicyclic structure, polymer compounds, resist materials, and patterning methods
    79.
    发明申请
    Novel epoxy compounds having an alicyclic structure, polymer compounds, resist materials, and patterning methods 审中-公开
    具有脂环结构的新型环氧化合物，高分子化合物，抗蚀剂材料和图案化方法

    公开(公告)号：US20050142491A1

    公开(公告)日：2005-06-30

    申请号：US11057008

    申请日：2005-02-11

    申请人： Koji Hasegawa ,  Takeshi Kinsho ,  Takeru Watanabe

    发明人： Koji Hasegawa ,  Takeshi Kinsho ,  Takeru Watanabe

    IPC分类号： C08F34/00 ,  C08G61/12 ,  G03F7/039 ,  G03C1/76

    CPC分类号： G03F7/0397 ,  G03F7/0395

    摘要： Provided is a novel epoxy compound useful, in photolithography, as a monomer for preparing a photoresist material excellent in transparency and affinity to a substrate. More specifically, provided are an epoxy compound represented by the following formula (1): wherein, R1 and R2 each independently represents a hydrogen atom or a linear, branched or cyclic C1-10 alkyl group in which hydrogen atoms on one or more constituent carbon atoms thereof may be partially or entirely substituted by one or more halogen atoms, or the constituent —CH2— may be substituted by an oxygen atom, or R1 and R2 may be coupled together to form an aliphatic hydrocarbon ring; R3 represents a linear, branched or cyclic C1-10 alkyl group or a C1-15 acyl or alkoxycarbonyl group in which hydrogen atoms on one or more constituent carbon atoms thereof may be partially or entirely substituted by one or more halogen atoms; X represents CH2, oxygen or sulfur; k stands for 0 or 1; and m stands for an integer of 0 to 5; and a polymer compound having recurring units available therefrom.

    摘要翻译： 提供了一种新颖的环氧化合物，在光刻中可用作制备对基材透明性和亲和性优异的光致抗蚀剂材料的单体。 更具体地，提供由下式（1）表示的环氧化合物：其中R 1和R 2各自独立地表示氢原子或直链，支链或 其中一个或多个构成碳原子上的氢原子可以被一个或多个卤素原子部分或全部取代的环状C 1-10烷基，或者构成-CH 2 可以被氧原子取代，或者R 1和R 2可以连接在一起形成脂族烃环; R 3表示直链，支链或环状C 1-10烷基或C 1-15酰基或烷氧基羰基，其中氢原子 其一个或多个构成碳原子可以部分或全部被一个或多个卤素原子取代; X表示CH 2，氧或硫; k代表0或1; m表示0〜5的整数。 和具有可从其获得的重复单元的高分子化合物。

    Tertiary alcohol compounds having alicyclic structure
    80.
    发明授权
    Tertiary alcohol compounds having alicyclic structure 有权
    具有脂环结构的叔醇化合物

    公开(公告)号：US06774258B2

    公开(公告)日：2004-08-10

    申请号：US10012419

    申请日：2001-12-12

    申请人： Koji Hasegawa ,  Takeru Watanabe ,  Takeshi Kinsho

    发明人： Koji Hasegawa ,  Takeru Watanabe ,  Takeshi Kinsho

    IPC分类号： C07C6974

    CPC分类号： C07C69/753 ,  C07C69/608 ,  C07C2602/42 ,  C07C2603/86

    摘要： Tertiary alcohol compounds of formula (1) are novel wherein R1 and R2 are C1-10 alkyl groups which may have halogen substituents, or R1 and R2 may form an aliphatic hydrocarbon ring, Y and Z are a single bond or a divalent C1-10 organic group, and k=0 or 1. Using the tertiary alcohol compounds as a monomer, polymers are obtained. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation and has excellent sensitivity, resolution, etching resistance and substrate adhesion.

    摘要翻译： 式（1）的叔醇化合物是新的，其中R 1和R 2是可具有卤素取代基的C 1-10烷基，或R 1和R 2可以形成脂族烃环，Y Z为单键或二价C 1-10有机基团，k = 0或1.使用叔醇化合物作为单体，得到聚合物。 包含作为基础树脂的聚合物的抗蚀剂组合物对高能辐射敏感，具有优异的灵敏度，分辨率，耐蚀刻性和基材粘合性。