摘要:
A refrigeration cycle that controls the deposit of foreign matter at inlet or outlet of a capillary tube, which forms an expansion device in the refrigeration, regardless of changeover from a cooling operation to a heating operation. In particular, in a refrigeration cycle using an alternative refrigerant, a junction is provided for joining an end of a capillary tube forming an expansion device to the piping through which the refrigerant flows. The junction has a slope defined by the inside diameter thereof, which gradually decreases from the side of the junction that joins the piping to the side of the junction that joined the capillary tube. An end portion of the capillary tube projects into the junction at the piping side. The projecting end of the capillary tube is opened obliquely to the axial line of the capillary tube. A hole is formed in the peripheral wall of the projecting end of the capillary tube. According to such an arrangement, foreign matter in the refrigerant is forced to be deposited in portions of the refrigerant cycle other than the capillary tube and prevented from clogging the capillary tube.
摘要:
A refrigeration cycle that controls the deposit of foreign matter at inlet or outlet of a capillary tube, which forms an expansion device in the refrigeration, regardless of changeover from a cooling operation to a heating operation. In particular, in a refrigeration cycle using an alternative refrigerant, a junction is provided for joining an end of a capillary tube forming an expansion device to the piping through which the refrigerant flows. The junction has a slope defined by the inside diameter thereof, which gradually decreases from the side of the junction that joins the piping to the side of the junction that joined the capillary tube. An end portion of the capillary tube projects into the junction at the piping side. The projecting end of the capillary tube is opened obliquely to the axial line of the capillary tube. A hole is formed in the peripheral wall of the projecting end of the capillary tube. According to such an arrangement, foreign matter in the refrigerant is forced to be deposited in portions of the refrigerant cycle other than the capillary tube and prevented from clogging the capillary tube.
摘要:
An apparatus is provided to manufacture a circular and edible sheet-like dough topping to be deposited on bread dough. In this apparatus the pressure for discharging the dough decreases from the center of the dough topping toward either of its ends, and at the same time the dough topping is initially discharged from its center followed by a delayed flow toward both ends of the dough topping.
摘要:
By merely using one reproducing head, an overwriting operation and an ATF operation can be performed, thereby reducing a crosstalk obstruction and modulation noises. Recording heads 7 and 8 having different azimuth angles and a reproducing head 9 having the same azimuth angle as that of the recording head 7 are provided for a drum 3. An (A) track constructed by a data region and an ATF pilot region is recorded to a magnetic tape 1 by the recording head 7. A (B) track constructed by a data region in which a single signal of a short wavelength is recorded and an ATF pilot region is recorded to the magnetic tape 1 by the recording head 8. Upon reproduction, the (A) track is reproduced by the reproducing head 9. Although the (B) track is not reproduced, the single signal is recorded as a (B) track, so that the overwriting operation and the ATF operation of an area method can be performed and, further, an excellent signal can be reproduced from the (A) track.
摘要:
An extruding apparatus for intermittently supplying a predetermined quantity of highly viscoelastic fluid material, e.g. food material. The apparatus has a supply pump, one end of which is connected to a hopper containing the food material and the other end connected to an extrusion valve covered with a housing via a supply pipe and a pressure sensing means mounted in the housing or in the supply pipe, thereby always sensing the pressure of the food material in the valve to keep the pressure to a predetermined value by operating or stopping the supply pump.
摘要:
To improve the coupling adjustment workability and precision of a rotor, irrespective of change in bearing characteristics due to an increase of rotational speed, the apparatus detects angular frequencies (.omega.) and reference mark positions (.theta.) of the rotor; detects vibration displacements (r) of the rotor; analyzes vibration vector components (.omega.), (r) and (.theta.) of rotation synchronizing vibrations; extracts a specific angular frequency (.omega..sub.1) at which a higher harmonic vibration frequency (.omega..sub.R) matches a natural frequency of the rotor, and various rotation synchronizing vibration vector components at (.omega..sub.1), at (.omega..sub.R) and (.omega..sub.2 to .omega..sub.i), respectively; estimates static vibration vector components (r.sub.0, .theta..sub.0) at zero angular frequency (.omega..sub.0) on the basis of rotation synchronizing vibration vector components (r.sub.T, .theta..sub.T) at (.omega..sub.1 to .omega..sub.i) and in accordance with a polynomial; obtains dynamic vibration vector components (r.sub.n, .theta..sub.n) by subtracting the static vibration vector components (r.sub.0, .theta..sub.0) from the rotation synchronizing vibration vector components (r.sub.Tn, .theta..sub.Tn), respectively; identifies a vibration response function; and estimates an eccentric direction (.theta.) and an eccentric quantity (.delta.) to be adjusted on the basis of (r.sub.n, .theta..sub.n) at (.omega..sub.R) and at (.omega..sub.1 to .omega..sub.i) and in accordance with the identified vibration response function. Further, the real time vibration status of the rotor and the estimated eccentric direction and quantity are all displayed.
摘要:
An InGaAlP NAM structure laser is formed with a double-heterostructure section disposed on an n-type GaAs substrate. The double-heterostructure section includes a first cladding layer of n-type InGaAlP, a non-doped InGaP active layer, and a second cladding layer of p-type InGaAlP. An n-type GaAs current-blocking layer having a stripe opening and a p-type GaAs contact layer are sequentially formed on the second cladding layer by MOCVD crystal growth. A low-energy band gap region is defined in a central region of the active layer located immediately below the stripe opening. A high-energy band gap region is defined in a peripheral region of the active layer corresponding to a light output end portion of the laser and located immediately below the current-blocking layer. Therefore, self absorption of an oscillated laser beam at the output end portion can be reduced or prevented.
摘要:
A double-heterostructure semiconductor laser is disclosed which has a semiconductive substrate of a first conductivity type made of III-V compound semiconductor material, a first semiconductive cladding layer of the first conductivity type disposed above the substrate, an active layer made of a semiconductor film provided on said cladding layer to serve as a light emission layer, and a second semiconductive cladding layer of a second conductivity type provided on the active layer to define a light waveguide channel of the laser. The second cladding layer is made of a compound semiconductor containing indium, phosphorus, and aluminum. A contact layer section is provided on the second cladding layer to cover the light waveguide channel. The contact layer is made of a compound semiconductor material containing gallium and arsenic, and has a band gap discontinuity at a boundary region of the light waveguide channel to form a barrier which serves to effectively seal current carriers in the waveguide channel, while the laser is emitting a laser light. This contact layer may also serve as a current-blocking layer.
摘要:
In a semiconductor laser device, for emitting a laser beam having a wavelength .lambda., an n-type In.sub.0.5 (Ga.sub.1-x Al.sub.x)P first cladding layer is formed on an n-type GaAs substrate. An undoped InGaP active layer is formed on the first cladding layer and a p-type In.sub.0.5 (Ga.sub.1-x Al.sub.x).sub.0.5 P cladding layer is formed on the active layer. A p-type InGaP cap layer is formed on the second cladding layer and an n-type GaAs current restricting layer is formed on the second cladding layer. The aluminum composition ratio x of the cladding layer is 0.7. The active layer has a thickness of 0.06 .mu.m and the cladding layers have the same thickness H of 0.85 .mu.m. The active layer and the cladding layers have refractive indices n.sub.a and n.sub.c which satisfies the following inequalities:0.015.DELTA..sup.1/2
摘要:
A device for supplying specified time-dependent DC current to a reactive load. The device comprises: a DC current source; a DC voltage source connected in series to the DC current source; a detector of the current in the load; a current source controller for causing the detected current to be approximately equal to a stipulated variable current; a detector of the output voltage of the current source; and a voltage source controller to cause the detected output voltage of the current source to achieve a predetermined constant voltage.