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108 条记录 (耗时 0.034 秒)

    Manufacturing method of semiconductor laser with non-absorbing mirror structure
    3.
    发明授权
    Manufacturing method of semiconductor laser with non-absorbing mirror structure 失效
    具有非吸收镜结构的半导体激光器的制造方法

    公开(公告)号：US5181218A

    公开(公告)日：1993-01-19

    申请号：US619606

    申请日：1990-11-29

    申请人： Masayuki Ishikawa ,  Hajime Okuda ,  Hideo Shiozawa ,  Kazuhiko Itaya ,  Yukio Watanabe ,  Mariko Suzuki ,  Genichi Hatakoshi

    发明人： Masayuki Ishikawa ,  Hajime Okuda ,  Hideo Shiozawa ,  Kazuhiko Itaya ,  Yukio Watanabe ,  Mariko Suzuki ,  Genichi Hatakoshi

    IPC分类号： H01S5/16 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323

    CPC分类号： H01S5/162 ,  H01S5/168 ,  H01S5/2231 ,  H01S5/3206 ,  H01S5/32325

    摘要： An InGaAlP NAM structure laser is formed with a double-heterostructure section disposed on an n-type GaAs substrate. The double-heterostructure section includes a first cladding layer of n-type InGaAlP, a non-doped InGaP active layer, and a second cladding layer of p-type InGaAlP. An n-type GaAs current-blocking layer having a stripe opening and a p-type GaAs contact layer are sequentially formed on the second cladding layer by MOCVD crystal growth. A low-energy band gap region is defined in a central region of the active layer located immediately below the stripe opening. A high-energy band gap region is defined in a peripheral region of the active layer corresponding to a light output end portion of the laser and located immediately below the current-blocking layer. Therefore, self absorption of an oscillated laser beam at the output end portion can be reduced or prevented.

    摘要翻译： InGaAlP NAM结构激光器形成有设置在n型GaAs衬底上的双异质结构部分。 双异质结构部分包括n型InGaAlP的第一包层，未掺杂的InGaP有源层和p型InGaAlP的第二包层。 通过MOCVD晶体生长，在第二覆层上依次形成具有条形开口和p型GaAs接触层的n型GaAs电流阻挡层。 在位于条形开口正下方的活性层的中心区域中限定低能带隙区域。 在活性层的与激光的光输出端部对应的周边区域中限定高能带隙区域，位于电流阻挡层的正下方。 因此，可以减少或防止在输出端部处的振荡的激光束的自吸收。

    Semiconductor device for passing current between a GaAs layer and an InGaAlP layer
    8.
    发明授权
    Semiconductor device for passing current between a GaAs layer and an InGaAlP layer 失效
    用于在GaAs层和InGaAlP层之间传导电流的半导体器件

    公开(公告)号：US5138404A

    公开(公告)日：1992-08-11

    申请号：US708806

    申请日：1991-05-31

    申请人： Masayuki Ishikawa ,  Kazuhiko Itaya ,  Genichi Hatakoshi

    发明人： Masayuki Ishikawa ,  Kazuhiko Itaya ,  Genichi Hatakoshi

    IPC分类号： H01S5/00 ,  H01L29/45 ,  H01S5/042 ,  H01S5/223 ,  H01S5/323

    CPC分类号： H01L33/30 ,  H01L29/452 ,  H01L33/0062 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/2231 ,  H01S5/32325

    摘要： A semiconductor device for passing electric current between a GaAs semiconductor layer (103) and an InGaAlP semiconductor layer (101) both having the same conductivity type. The device includes a higher carrier density region (102) with the carrier density equal to or more than 5.times.10.sup.17 cm.sup.-3 and thickness in a rannge from 400 .ANG. to 800 .ANG. in at least a part of the InGaAlP layer (101) adjoining the GaAs layer (103). As a result, good ohmic contact is achieved and the semiconductor device has a lower operating voltage and a satisfactory thermal characteristic.

    摘要翻译： 一种用于在GaAs半导体层（103）和具有相同导电类型的InGaAlP半导体层（101）之间传导电流的半导体器件。 该器件包括载流子密度等于或大于5×10 17 cm -3的较高载流子密度区域（102），并且在邻接GaAs的至少一部分InGaAlP层（101）中，从400到800的范围内的厚度 层（103）。 结果，实现良好的欧姆接触，并且半导体器件具有较低的工作电压和令人满意的热特性。

    Compound semiconductor light-emitting device of gallium nitride series
    10.
    发明授权
    Compound semiconductor light-emitting device of gallium nitride series 失效
    氮化镓系复合半导体发光元件

    公开(公告)号：US6067309A

    公开(公告)日：2000-05-23

    申请号：US921693

    申请日：1997-09-02

    申请人： Masaaki Onomura ,  Kazuhiko Itaya ,  Genichi Hatakoshi

    发明人： Masaaki Onomura ,  Kazuhiko Itaya ,  Genichi Hatakoshi

    IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/30 ,  H01S5/323 ,  H01S5/343 ,  H01S3/19

    CPC分类号： H01S5/0421 ,  H01S2301/173 ,  H01S5/0425 ,  H01S5/3063 ,  H01S5/32341

    摘要： There is disclosed a compound semiconductor light-emitting device of gallium nitride series having high reliability, which can be operated by a low threshold current and a low operation voltage without deterioration. The device comprises a p-type semiconductor structure having high carrier concentration, which can easily form a low resistance p-side electrode, and which can uniformly implant carriers to an active layer highly efficiently. A p electrode contact layer having Mg added thereto is used as a p-type semiconductor layer. At least a Ga.sub.x2 In.sub.y2 Al.sub.z2 N (x2+y2+z2=1, 0.ltoreq.x2, z2.ltoreq.1, 0

    摘要翻译： 公开了一种具有高可靠性的氮化镓系化合物半导体发光元件，可以通过低阈值电流和低工作电压进行操作而不劣化。 该装置包括具有高载流子浓度的p型半导体结构，其可以容易地形成低电阻p侧电极，并且可以高效地均匀地将载流子注入活性层。 使用具有Mg的p电极接触层作为p型半导体层。 在有源层上形成至少一个Gax2Iny2Alz2N（x2 + y2 + z2 = 1,0，x2，z2，...，0