摘要:
In a semiconductor laser device, for emitting a laser beam having a wavelength .lambda., an n-type In.sub.0.5 (Ga.sub.1-x Al.sub.x)P first cladding layer is formed on an n-type GaAs substrate. An undoped InGaP active layer is formed on the first cladding layer and a p-type In.sub.0.5 (Ga.sub.1-x Al.sub.x).sub.0.5 P cladding layer is formed on the active layer. A p-type InGaP cap layer is formed on the second cladding layer and an n-type GaAs current restricting layer is formed on the second cladding layer. The aluminum composition ratio x of the cladding layer is 0.7. The active layer has a thickness of 0.06 .mu.m and the cladding layers have the same thickness H of 0.85 .mu.m. The active layer and the cladding layers have refractive indices n.sub.a and n.sub.c which satisfies the following inequalities:0.015.DELTA..sup.1/2
摘要:
In a semiconductor laser device, for emitting a laser beam having a wavelength .lambda., an n-type In.sub.0.5 (Ga.sub.1-x Al.sub.x)P first cladding layer is formed on an n-type GaAs substrate. An undoped InGaP active layer is formed on the first cladding layer and a p-type In.sub.0.5 (Ga.sub.1-x Al.sub.x).sub.0.5 P cladding layer is formed on the active layer. A p-type InGaP cap layer is formed on the second cladding layer and an n-type GaAs current restricting layer is formed on the second cladding layer. The aluminum composition ratio x of the cladding layer is 0.7. The active layer has a thickness of 0.06 .mu.m and the cladding layers have the same thickness H of 0.85 .mu.m. The active layer and the cladding layers have refractive indices n.sub.a and n.sub.c which satisfies the following inequalities:0.015.DELTA..sup.1/2
摘要:
A visible-light wavelength continuous oscillation laser is disclosed which has an N type GaAs substrate, an N type GaAlAs cladding layer formed on the substrate, and a non-doped GaAlAs active layer formed on the cladding layer. The laser further includes two N type GaAlAs layers, a P type GaAlAs optical guide layer, a P type cladding layer consisting of upper and lower portions, and a ridge section. The N type GaAlAs layers contact both sides of the ridge section. The optical guide layer is sandwiched between the upper and lower portions of the P type cladding layer, is located within the ridge section, and has a refractive index greater than that of the P type cladding layer. The distance between the active layer and the optical guide layer does not depend on the condition in which etching is performed to form the ridge section, but depends basically on the time required to grow crystal.
摘要:
An optical wavelength-converting device for generating the second-harmonic wave through Cerenkov radiation has a substrate made from nonlinear optical crystal which acts as a cladding layer. Formed on the top surface of the substrate is a long, narrow optical waveguide layer, whose refractive index is larger than that of the substrate. In the substrate, multi-layered domain-inverted sections are formed. With this arrangement, the nonlinear coefficient is locally changed, thereby compensating for phase mismatching between the fundamental wave and the second-harmonic wave in the direction perpendicular to the substrate's surface. This compensation helps improve the efficiency in converting the laser input light of the fundamental wave into the second-harmonic wave.
摘要:
A wavelength converting optical device includes an optical waveguide which has a waveguide portion and a cladding portion, at least one of which is formed of a nonlinear optical material. A fundamental wave, incident on the waveguide portion from an input end face of the waveguide, is converted into an optical second harmonic wave by Cerenkov radiation and is radiated into the cladding portion. The radiated second harmonic wave is output from an output end face of the waveguide. A reflecting film is provided on the emerging end face of the waveguide. The reflecting film includes a high reflectivity with respect to the fundamental wave of a guide mode and a low reflectivity with respect to the optical second harmonic wave. A wave front converting element is arranged to oppose the reflecting film. The converting element has a diffraction grating for converting the second harmonic wave, emerging from the output end face of the waveguide, into a plane wave.
摘要:
To suppress power consumption and enhance signal quality as compared with the case where first and second semiconductor elements are terminated only by on-chip input termination resistor circuits. A first semiconductor element with a switching function and a second semiconductor element with a switching function are connected to each other with a substrate interconnection, and a resistor element is connected in parallel with the substrate interconnection. The resistor element is placed at an arbitrary position or a branch point on the signal interconnection.
摘要:
A vehicle heating and air conditioning system basically includes an interior/exterior air introducing structure, a heating device, a driving end time acquiring section and an interior/exterior air switching control section. The interior/exterior air introducing structure switches the flow of cabin intake air between an interior air recirculation mode and an exterior air introducing mode. The heating device heats the cabin intake air being introduced by the interior/exterior air introducing structure. The driving end time acquiring section estimates a driving end time corresponding to a point in time at which driving of a vehicle is predicted to end. The interior/exterior air switching control section switches the interior/exterior air introducing structure from the exterior air introducing mode to the interior air recirculation mode during a period of time from a prescribed point in time until the driving end time to restrict windshield fogging while in the interior air recirculation mode.
摘要:
Provided is a signal transfer circuit which uses a low cost circuit board with a high packing density but is capable of reducing a crosstalk noise between signal lines and also reducing a reflection noise due to a stub. A signal transfer circuit of the present invention is configured such that lead terminals of electronic components and through-hole vias are connected to each other by surface wirings, respectively, to allow no branching from the middle of the through-hole vias. Further, first wirings connecting a first electronic component are each arranged between a corresponding pair of second wirings connecting a second electronic component, and signals are transmitted through the first wirings and the second wirings by interleaved transmission.
摘要:
In a prior art, there has been a method in which a power supply line of an output buffer and that of a control circuit are independently provided so that the power supply noise occurring in the control circuit will not affect the output buffer. However, this method has had the problems that it increases both the number of power supply/grounding pins and power feed line inductance.The present invention provides a technique which, without causing the above two problems, i.e., (1) increased number of power supply/grounding pins and (2) increased power feed line inductance, prevents the noise causing a problem in a control circuit, from becoming routed around and induced into an output buffer. More specifically, the above can be realized by using either of two methods: (A) providing an on-chip bypass capacitor for the control circuit and isolating a power feed route of the control circuit from that of the output buffer in an AC-like manner, or (B) designing electrical parameters (inserting resistors) such that the oscillation mode of any electrical parameter noise induced into the power feed routes will change to overdamping.
摘要:
This is a method for regenerating the NOx catalyst in a NOx purifying system provided in the exhaust passage with a direct reduction type NOx catalyst which directly decomposes the NOx during lean-condition operation and is regenerated at rich-condition operation, and the method prohibiting the rich-condition control when the temperature detected by a catalyst temperature detecting means is within the predetermined temperature range.Thus, when the exhaust gas are temporarily made rich-condition for catalyst regeneration which means recovering the NOx purifying ability of the direct reduction type NOx catalyst arranged in the exhaust passage of the engine, the NOx is prohibited from being discharged into the atmospheric air, and also the purifying ability can surely be recovered.