公开(公告)号：US06940090B2

公开(公告)日：2005-09-06

申请号：US10634917

申请日：2003-08-06

申请人： Wataru Saito ,  Ichiro Omura ,  Hiromichi Ohashi

发明人： Wataru Saito ,  Ichiro Omura ,  Hiromichi Ohashi

IPC分类号： H01L29/812 ,  H01L21/338 ,  H01L27/06 ,  H01L29/778 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L27/0605 ,  H01L29/0619 ,  H01L29/0657 ,  H01L29/1602 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/7787 ,  H01L29/872

摘要： A power semiconductor device includes a first semiconductor layer, a second semiconductor layer of a first conductivity type, first and second main electrodes, a control electrode and a third semiconductor layer. The second semiconductor layer is formed on the first semiconductor layer. The first and second main electrodes are formed on the second semiconductor layer separately from each other. The control electrode is formed on the second semiconductor layer between the first and second main electrodes. The third semiconductor layer is formed on the second semiconductor layer between the control electrode and the second main electrode.

摘要翻译： 功率半导体器件包括第一半导体层，第一导电类型的第二半导体层，第一和第二主电极，控制电极和第三半导体层。 第二半导体层形成在第一半导体层上。 第一和第二主电极彼此分开地形成在第二半导体层上。 控制电极形成在第一和第二主电极之间的第二半导体层上。 在控制电极和第二主电极之间的第二半导体层上形成第三半导体层。

公开(公告)号：US06888195B2

公开(公告)日：2005-05-03

申请号：US10342364

申请日：2003-01-15

申请人： Wataru Saito ,  Ichiro Omura ,  Kozo Kinoshita

发明人： Wataru Saito ,  Ichiro Omura ,  Kozo Kinoshita

IPC分类号： H01L21/336 ,  H01L29/06 ,  H01L29/12 ,  H01L29/739 ,  H01L29/78 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119 ,  H01L27/12 ,  H01L31/062 ,  H01L27/01 ,  H01L31/113 ,  H01L31/0392

CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696

摘要： A power semiconductor device is disclosed, which comprises a semiconductor layer including a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type, which are periodically formed in the lateral direction, and a power semiconductor element including the semiconductor layers that are formed periodically, wherein a distribution of an amount of an impurity in a vertical direction of the first semiconductor layer differs from a distribution of an amount of an impurity in the vertical direction of the second semiconductor layer.

摘要翻译： 公开了一种功率半导体器件，其包括半导体层，其包括沿横向周期性地形成的第一导电类型的第一半导体层和第二导电类型的第二半导体层，以及包括半导体的功率半导体元件 周期性地形成的层，其中第一半导体层的垂直方向上的杂质量的分布与第二半导体层的垂直方向上的杂质量的分布不同。

公开(公告)号：US06493660B2

公开(公告)日：2002-12-10

申请号：US09828778

申请日：2001-04-10

申请人： Wataru Saito

发明人： Wataru Saito

IPC分类号： G06F1750

CPC分类号： G06F17/5031

摘要： There is provided a delay time calculating method for use in a hierarchical design, capable of accurately calculating the delay amount at a boundary between different level layers in a hierarchical structure. A whole chain (T$01 to T$13) is divided into a first partial chain (T$04 to T$10) and a second partial chain (T$01 to T$03, T$11 to T$13). A first delay amount (TD(4-10)) of the first partial chain (T$04 to T$10) is calculated. A third partial chain (T$01 to T$05, T$09 to T$13) consisting of the second partial chain (T$01 to T$03, T$11 to T$13) and a plurality of chain elements (T$04 to T$05, T$09 to T$10) included in an end region of the first partial chain (T$04 to T$10), is generated, and a second delay amount (TD(1-5), TD(9-13)) of the third partial chain (T$01 to T$05, T$09 to T$13) is calculated. An end chain element (T$05, T$09) of the above mentioned plurality of chain elements (T$04 to T$05, T$09 to T$10) is separated from the third partial chain (T$01 to T$05, T$09 to T$13), and a third delay amount (D(5), D(9)) of the end chain element (T$05, T$09) is calculated. The third delay amount (D(5), D(9)) is subtracted from the second delay amount (TD(1-5), TD(9-13)) to obtain a fourth delay amount (TD(1-4), TD(10-13)). The fourth delay amount (TD(1-4), TD(10-13)) is overwritten to the first delay amount (TD(4-10)) in units of chain elements to calculate the delay amount (TD(1-13)) of the whole chain. Thus, an inaccurate value is canceled, so that an accurate relation between the delay amount of a partial chain and the delay amount of the whole chain can be obtained.

摘要翻译： 提供了一种用于分级设计的延迟时间计算方法，能够以分层结构精确地计算不同层次之间的边界处的延迟量。 整个链（T $ 01至T $ 13）分为第一部分链（T $ 04至T $ 10）和第二部分链（T $ 01至T $ 03，T $ 11至T $ 13）。 计算第一部分链的第一延迟量（TD（4-10））（T $ 04至T $ 10）。 第二部分链（T $ 01至T $ 05，T $ 09至T $ 13）由第二部分链（T $ 01至T $ 03，T $ 11至T $ 13）和多个链元素（T $ 04至T $ 05，T 产生包含在第一部分链的结束区域（T $ 04至T $ 10）中的$ 09至T $ 10），并且产生第三部分链的第二延迟量（TD（1-5），TD（9-13）） （T $ 01至T $ 05，T $ 09至T $ 13）。 上述多个连锁元素（T $ 04至T $ 05，T $ 09至T $ 10）的终端链元素（T $ 05，T $ 09）与第三部分链（T $ 01至T $ 05，T $ 09至T $ 13），并且计算端链元素（T $ 05，T $ 09）的第三延迟量（D（5），D（9））。 从第二延迟量（TD（1-5），TD（9-13））中减去第三延迟量（D（5），D（9）），以获得第四延迟量（TD（1-4） ，TD（10-13））。 将第四延迟量（TD（1-4），TD（10-13））以链元素为单位重写为第一延迟量（TD（4-10）），以计算

公开(公告)号：US5851422A

公开(公告)日：1998-12-22

申请号：US797138

申请日：1997-02-10

申请人： Wataru Saito ,  Atsushi Baba ,  Tadafumi Shindo ,  Naoki Shimada ,  Hidetoshi Ozawa ,  Yoshinori Kinase ,  Tisato Kajiyama ,  Yasuhiro Imamura ,  Norihiro Kaiya ,  Yoshitaka Goto

发明人： Wataru Saito ,  Atsushi Baba ,  Tadafumi Shindo ,  Naoki Shimada ,  Hidetoshi Ozawa ,  Yoshinori Kinase ,  Tisato Kajiyama ,  Yasuhiro Imamura ,  Norihiro Kaiya ,  Yoshitaka Goto

IPC分类号： G02F1/1333 ,  C08F20/10 ,  C08F20/12 ,  C08F22/10 ,  C08L33/04 ,  C08L33/06 ,  C08L35/02 ,  C09K19/12 ,  C09K19/20 ,  C09K19/54 ,  C09K19/60 ,  G02F1/13 ,  C09K19/52

CPC分类号： C09K19/544

摘要： A record display medium is provided which can offer a high display contrast and is less likely to cause a lowering of contrast or disappearance of display even in low temperature and high temperature regions. A polymeric material for a liquid crystal/polymer composite film comprising a liquid crystal present in a polymer matrix, a liquid crystal/polymer composite film using the material, and use of the record display medium are also provided. The polymeric material for a liquid crystal/polymer composite film comprising a liquid crystal present in a polymer matrix has a glass transition temperature of 150.degree. C. or above and is insoluble in water.

摘要翻译： 提供了可以提供高显示对比度的记录显示介质，并且即使在低温和高温区域中也不太可能引起对比度降低或显示消失。 还提供了一种用于液晶/聚合物复合膜的聚合物材料，其包含存在于聚合物基质中的液晶，使用该材料的液晶/聚合物复合膜以及记录显示介质的使用。 含有存在于聚合物基质中的液晶的液晶/聚合物复合膜用聚合物材料的玻璃化转变温度为150℃以上，不溶于水。

公开(公告)号：US5810456A

公开(公告)日：1998-09-22

申请号：US620206

申请日：1996-03-22

申请人： Hiromi Inagaki ,  Yoshimichi Kawamoto ,  Kazuya Sakurai ,  Wataru Saito ,  Masaaki Kitazawa

发明人： Hiromi Inagaki ,  Yoshimichi Kawamoto ,  Kazuya Sakurai ,  Wataru Saito ,  Masaaki Kitazawa

IPC分类号： B60T13/66 ,  B60T8/26 ,  B60T8/32 ,  B60T8/36 ,  B60T8/40 ,  B60T8/48

CPC分类号： B60T8/4827 ,  B60T8/267 ,  B60T8/3665 ,  B60T8/4072

摘要： A brake system for a vehicle includes a liquid pressure generating device for generating a liquid pressure dependent upon a manual operation, actuators having output ports for outputting a liquid pressure dependent upon an electrical command signal from a controller, and which are adapted to be connected to a reservoir when the actuators are non-operative, and switchover valves switchable between a state in which wheel brakes are connected to the liquid pressure generating device, and a state in which the wheel brakes are connected to the actuators. In the brake system, on-off valves are connected between the output ports of the actuators and the switchover valves, and are opened when the liquid pressures output from the actuators is equal to or higher than a predetermined value.

摘要翻译： 一种用于车辆的制动系统包括用于产生取决于手动操作的液体压力的液压产生装置，具有输出端口的致动器，所述输出端口用于输出取决于来自控制器的电命令信号的液体压力，并且适于连接到 当致动器不操作时的储存器，以及在轮式制动器连接到液体压力产生装置的状态之间切换的切换阀以及车轮制动器连接到致动器的状态。 在制动系统中，开关阀连接在致动器的输出端口和切换阀之间，并且当从致动器输出的液体压力等于或高于预定值时打开。

公开(公告)号：US5564796A

公开(公告)日：1996-10-15

申请号：US402240

申请日：1995-03-10

申请人： Wataru Saito ,  Kenji Akuzawa ,  Hiromi Inagaki

发明人： Wataru Saito ,  Kenji Akuzawa ,  Hiromi Inagaki

IPC分类号： B60W10/04 ,  B60T8/172 ,  B60T8/175 ,  B60T8/1764 ,  B60T8/36 ,  B60T8/48 ,  B60W10/06 ,  B60W10/12 ,  B60W10/18 ,  B60W10/188 ,  B60T8/00

CPC分类号： B60T8/326 ,  B60T8/175 ,  B60T8/3665 ,  B60T8/48

摘要： A traction control device for a vehicle includes a control unit for operating wheel brakes for left and right driven wheels connected to a power source through a differential, when an excessively slipping tendency is produced in one or both of the driven wheels. In the traction control, an input torque supplied from the power source to the differential is detected by an input torque detecting device. A limit driving torque is determined based on a detection value detected by the input torque detecting device at the time when it is detected by a slip detecting device that only one of the driven wheels is fallen into the excessively slipping tendency. A braking torque to be applied to the one driven wheel is determined based on a value resulting from the subtraction of the limit driving torque from a current detection value detected by the input torque detecting device. Consequently, it is possible to reduce the control system into a relatively small size and to improve the control responsiveness and the hysteresis characteristic.

摘要翻译： 一种用于车辆的牵引力控制装置包括控制单元，当在一个或两个从动轮中产生过度滑动的倾向时，用于通过差速器连接到电源的左右驱动轮的轮式制动器。 在牵引力控制中，通过输入转矩检测装置检测从电源向差速器供给的输入转矩。 基于由滑动检测装置检测到的输入转矩检测装置检测到的检测值，仅有一个从动轮落入过度倾向的倾向，确定极限驱动转矩。 基于从由输入转矩检测装置检测出的电流检测值减去极限驱动转矩而得到的值来确定施加到一个从动轮的制动转矩。 因此，可以将控制系统减小到相对较小的尺寸并提高控制响应性和滞后特性。

公开(公告)号：US5375917A

公开(公告)日：1994-12-27

申请号：US179722

申请日：1994-01-11

申请人： Hiromi Inagaki ,  Wataru Saito ,  Kazuya Sakurai ,  Yoshimichi Kawamoto

发明人： Hiromi Inagaki ,  Wataru Saito ,  Kazuya Sakurai ,  Yoshimichi Kawamoto

IPC分类号： B60T8/32 ,  B60T8/00 ,  B60T8/174 ,  B60T8/1755 ,  B60T8/36 ,  B60T15/36

CPC分类号： B60T8/326 ,  B60T8/00 ,  B60T8/1755 ,  B60T8/3665

摘要： A braking force control system of a vehicle includes a deviation reference control quantity determining device for determining an operation control quantity for the actuator on the basis of a deviation between a target deceleration determined on the basis of a quantity of operation of a brake operating member and a detected deceleration of the vehicle. In this control system, the level of operation speed is judged in accordance with whether or not the variation per unit time in quantity of operation of the brake operating member exceeds a preset value. Following two states are switched over from one to another by a switch device: a state 1) in which the operation of the actuator is controlled with an operation control quantity determined in the deviation reference control quantity determining device, when it is decided that the operation speed is slow or low, and a state 2) in which the operation of the actuator is controlled with an operation control quantity determined in an operation quantity reference quantity determining device for determining the operation control quantity on the basis of the quantity of operation of the brake operating member, when the operation speed is fast or high. Thus, the generation of an overshooting can be avoided to improve the responsiveness.

摘要翻译： 车辆的制动力控制系统包括：偏差基准控制量决定装置，其根据基于制动操作部件的动作量确定的目标减速度和 检测到车辆的减速度。 在该控制系统中，根据制动操作部件的运转量的每单位时间的变化量是否超过预设值来判断运转速度的水平。 以下两种状态通过开关装置从一个状态切换到另一状态：状态1），其中致动器的操作由在偏差基准控制量确定装置中确定的操作控制量进行控制，当确定操作 速度为慢或低，以及状态2），其中通过在操作量参考量确定装置中确定的操作控制量来控制致动器的操作，用于基于操作量的操作量来确定操作控制量 制动操作部件，运转速度快或高时。 因此，可以避免产生过冲以提高响应性。

公开(公告)号：US08809942B2

公开(公告)日：2014-08-19

申请号：US13419400

申请日：2012-03-13

申请人： Shizue Matsuda ,  Shingo Sato ,  Wataru Saito

发明人： Shizue Matsuda ,  Shingo Sato ,  Wataru Saito

IPC分类号： H01L29/772

CPC分类号： H01L29/7811 ,  H01L29/0653 ,  H01L29/0661 ,  H01L29/66734 ,  H01L29/7813

摘要： According to an embodiment, a trench structure and a second semiconductor layer are provided in a semiconductor device. In the trench structure, a trench is provided in a surface of a device termination portion with a first semiconductor layer of a first conductive type including a device portion and the device termination portion, and an insulator is buried in the trench in such a manner to cover the trench. The second semiconductor layer, which is of a second conductive type, is provided on the surface of the first semiconductor layer, is in contact with at least a side on the device portion of the trench, and has a smaller depth than the trench. The insulator and a top passivation film for the semiconductor device are made of the same material.

摘要翻译： 根据实施例，在半导体器件中设置沟槽结构和第二半导体层。 在沟槽结构中，在器件端子部分的表面中设置沟槽，其中第一半导体层具有包括器件部分和器件端接部分的第一导电类型，并且绝缘体以这样的方式被掩埋在沟槽中： 覆盖沟槽。 具有第二导电类型的第二半导体层设置在第一半导体层的表面上，与沟槽的器件部分的至少一侧接触，并且具有比沟槽更小的深度。 用于半导体器件的绝缘体和顶部钝化膜由相同的材料制成。

公开(公告)号：US08643091B2

公开(公告)日：2014-02-04

申请号：US13052028

申请日：2011-03-18

申请人： Wataru Saito ,  Syotaro Ono ,  Shunji Taniuchi ,  Miho Watanabe ,  Hiroaki Yamashita

发明人： Wataru Saito ,  Syotaro Ono ,  Shunji Taniuchi ,  Miho Watanabe ,  Hiroaki Yamashita

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7839 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0878 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813

摘要： A semiconductor device includes first, second, third, and fourth semiconductor layers of alternating first and second conductivity types, an embedded electrode in a first trench that penetrates through the second semiconductor layer, a control electrode above the embedded electrode in the first trench, and first and second main electrodes. The fourth semiconductor layer is selectively provided in the first semiconductor layer and is connected to a lower end of a second trench, which penetrates through the second semiconductor layer. The first main electrode is electrically connected to the first semiconductor layer, and the second main electrode is in the second trench and electrically connected to the second, third, and fourth semiconductor layers. The embedded electrode is electrically connected to the second main electrode or the control electrode. A Shottky junction formed of the second main electrode and the first semiconductor layer is formed at a sidewall of the second trench.

摘要翻译： 半导体器件包括交替的第一和第二导电类型的第一，第二，第三和第四半导体层，穿透第二半导体层的第一沟槽中的嵌入电极，在第一沟槽中的嵌入电极上方的控制电极，以及 第一和第二主电极。 第四半导体层选择性地设置在第一半导体层中，并且连接到穿过第二半导体层的第二沟槽的下端。 第一主电极与第一半导体层电连接，第二主电极位于第二沟槽中，并与第二，第三和第四半导体层电连接。 嵌入电极与第二主电极或控制电极电连接。 在第二沟槽的侧壁处形成由第二主电极和第一半导体层形成的肖特基结。

公开(公告)号：US08592917B2

公开(公告)日：2013-11-26

申请号：US13235302

申请日：2011-09-16

申请人： Syotaro Ono ,  Wataru Saito ,  Shunji Taniuchi ,  Miho Watanabe ,  Hiroaki Yamashita ,  Toshiyuki Naka

发明人： Syotaro Ono ,  Wataru Saito ,  Shunji Taniuchi ,  Miho Watanabe ,  Hiroaki Yamashita ,  Toshiyuki Naka

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/42376 ,  H01L29/4238

摘要： According to an embodiment, a semiconductor device includes a second semiconductor layer provided on a first semiconductor layer and including first pillars and second pillars. A first control electrode is provided in a trench of the second semiconductor layer and a second control electrode is provided on the second semiconductor layer and connected to the first control electrode. A first semiconductor region is provided on a surface of the second semiconductor layer except for a portion under the second control electrode. A second semiconductor region is provided on a surface of the first semiconductor region, the second semiconductor region being apart from the portion under the second control electrode and a third semiconductor region is provided on the first semiconductor region. A first major electrode is connected electrically to the first semiconductor layer and a second major electrode is connected electrically to the second and the third semiconductor region.