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110 条记录 (耗时 0.032 秒)

    Electrically floating shield in a plasma reactor
    71.
    发明授权
    Electrically floating shield in a plasma reactor 失效
    等离子体反应器中的电浮动屏蔽

    公开(公告)号：US5736021A

    公开(公告)日：1998-04-07

    申请号：US677760

    申请日：1996-07-10

    申请人： Peijun Ding ,  Zheng Xu ,  Jianming Fu

    发明人： Peijun Ding ,  Zheng Xu ,  Jianming Fu

    IPC分类号： C23C14/34 ,  H01J37/32 ,  H01L21/203 ,  H01L21/205 ,  H01L21/285 ,  H01L21/302 ,  H01L21/3065

    CPC分类号： H01J37/32504 ,  H01J37/32633

    摘要： In a plasma reactor, especially one intended for physical vapor deposition (PVD) onto semiconductor substrates, a shield disposed in front of the chamber walls between the PVD target and the substrates to protect the chamber walls. According to the invention, the shield is left electrically floating so that electrically charged ions and electrons emanating from the plasma or target and impinging upon the shield charge it to the point that the electrical flux is repelled.

    摘要翻译： 在等离子体反应器中，特别是用于物理气相沉积（PVD）到半导体衬底上的等离子体反应器，设置在PVD靶和衬底之间的室壁前面的屏蔽件，以保护室壁。 根据本发明，屏蔽电子悬空，使得从等离子体或目标物发射并与屏蔽电荷碰撞的带电荷的离子和电子充电到电流被排斥的点。

    Solar cells fabricated by using CVD epitaxial Si films on metallurgical-grade Si wafers
    75.
    发明授权
    Solar cells fabricated by using CVD epitaxial Si films on metallurgical-grade Si wafers 有权
    通过在冶金级Si晶片上使用CVD外延Si膜制造的太阳能电池

    公开(公告)号：US08637761B2

    公开(公告)日：2014-01-28

    申请号：US12343116

    申请日：2008-12-23

    申请人： Jianming Fu ,  Zheng Xu ,  Peijun Ding ,  Chentao Yu ,  Guanghua Song ,  Jianjun Liang

    发明人： Jianming Fu ,  Zheng Xu ,  Peijun Ding ,  Chentao Yu ,  Guanghua Song ,  Jianjun Liang

    IPC分类号： H01L31/00 ,  C30B15/00

    CPC分类号： H01L31/1804 ,  H01L21/3221 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

    摘要： One embodiment of the present invention provides a method for fabricating a solar cell. The method includes: melting a metallurgical-grade (MG) Si feedstock, lowering a single-crystalline Si seed to touch the surface of the molten MG-Si, slowly pulling out a single-crystal Si ingot of the molten MG-Si, processing the Si ingot into single crystal Si wafers to form MG-Si substrates for subsequent epitaxial growth, leaching out residual metal impurities in the MG-Si substrate, epitaxially growing a layer of single-crystal Si thin film doped with boron on the MG-Si substrate, doping phosphor to the single-crystal Si thin film to form an emitter layer, depositing an anti-reflection layer on top of the single-crystal Si thin film, and forming the front and the back electrical contacts.

    摘要翻译： 本发明的一个实施例提供一种制造太阳能电池的方法。 该方法包括：熔化冶金级（MG）Si原料，降低单晶Si种子以接触熔融的MG-Si的表面，缓慢拉出熔融的MG-Si的单晶Si锭，加工 Si晶锭形成单晶Si晶片以形成用于随后的外延生长的MG-Si衬底，浸出MG-Si衬底中的残余金属杂质，在MG-Si上外延生长掺杂有硼的单晶Si薄膜层 衬底，掺杂磷光体到单晶Si薄膜以形成发射极层，在单晶Si薄膜的顶部沉积抗反射层，并形成前后电接触。

    HIGH EFFICIENCY LOW COST CRYSTALLINE-SI THIN FILM SOLAR MODULE
    79.
    发明申请
    HIGH EFFICIENCY LOW COST CRYSTALLINE-SI THIN FILM SOLAR MODULE 审中-公开
    高效低成本晶体薄膜太阳能模块

    公开(公告)号：US20100300507A1

    公开(公告)日：2010-12-02

    申请号：US12566459

    申请日：2009-09-24

    申请人： Jiunn Benjamin Heng ,  Chentao Yu ,  Zheng Xu ,  Jianming Fu ,  Peijun Ding

    发明人： Jiunn Benjamin Heng ,  Chentao Yu ,  Zheng Xu ,  Jianming Fu ,  Peijun Ding

    IPC分类号： H01L31/042 ,  H01L31/00 ,  H01L21/20 ,  H01L31/18

    CPC分类号： H01L31/1804 ,  B32B17/10036 ,  H01L31/02363 ,  H01L31/048 ,  H01L31/0516 ,  H01L31/0684 ,  H01L31/0747 ,  H01L31/1892 ,  Y02E10/547 ,  Y02P70/521

    摘要： One embodiment of the present invention provides a double-sided heterojunction solar cell module. The solar cell includes a frontside glass cover, a backside cover situated below the frontside glass cover, and a number of solar cells situated between the frontside glass cover and the backside glass cover. Each solar cell includes a semiconductor multilayer structure situated below the frontside glass cover, including: a frontside electrode grid, a first layer of heavily doped amorphous Si (a-Si) situated below the frontside electrode, a layer of lightly doped crystalline-Si (c-Si) situated below the first layer of heavily doped a-Si, and a layer of heavily doped c-Si situated below the lightly doped c-Si layer. The solar cell also includes a second layer of heavily doped a-Si situated below the multilayer structure; and a backside electrode situated below the second layer of heavily doped a-Si.

    摘要翻译： 本发明的一个实施例提供了一种双面异质结太阳能电池模块。 太阳能电池包括前侧玻璃盖，位于前侧玻璃盖下方的背面盖以及位于前侧玻璃罩和后侧玻璃罩之间的若干太阳能电池。 每个太阳能电池包括位于前侧玻璃盖下方的半导体多层结构，包括：前侧电极栅格，位于前侧电极下方的重掺杂非晶Si（a-Si）第一层，轻掺杂晶体Si层 c-Si），以及位于轻掺杂的c-Si层下方的重掺杂c-Si层。 太阳能电池还包括位于多层结构下方的第二层重掺杂a-Si层; 以及位于重掺杂a-Si的第二层下方的背面电极。

    HETEROJUNCTION SOLAR CELL BASED ON EPITAXIAL CRYSTALLINE-SILICON THIN FILM ON METALLURGICAL SILICON SUBSTRATE DESIGN
    80.
    发明申请
    HETEROJUNCTION SOLAR CELL BASED ON EPITAXIAL CRYSTALLINE-SILICON THIN FILM ON METALLURGICAL SILICON SUBSTRATE DESIGN 有权
    基于金属硅基底板上的外延晶体硅薄膜的异相太阳能电池

    公开(公告)号：US20100229927A1

    公开(公告)日：2010-09-16

    申请号：US12401314

    申请日：2009-03-10

    申请人： Chentao Yu ,  Jiunn Benjamin Heng ,  Zheng Xu ,  Jianming Fu ,  Jianjun Liang

    发明人： Chentao Yu ,  Jiunn Benjamin Heng ,  Zheng Xu ,  Jianming Fu ,  Jianjun Liang

    IPC分类号： H01L31/00 ,  H01L31/0216

    CPC分类号： H01L31/0747 ,  H01L31/02363 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/202 ,  Y02E10/547 ,  Y02P70/521

    摘要： One embodiment of the present invention provides a heterojunction solar cell. The solar cell includes a metallurgical-grade Si (MG-Si) substrate, a layer of heavily doped crystalline-Si situated above the MG-Si substrate, a layer of lightly doped crystalline-Si situated above the heavily doped crystalline-Si layer, a backside ohmic-contact layer situated on the backside of the MG-Si substrate, a passivation layer situated above the heavily doped crystalline-Si layer, a layer of heavily doped amorphous Si (a-Si) situated above the passivation layer, a layer of transparent-conducting-oxide (TCO) situated above the heavily doped a-Si layer, and a front ohmic-contact electrode situated above the TCO layer.

    摘要翻译： 本发明的一个实施例提供了异质结太阳能电池。 太阳能电池包括冶金级Si（MG-Si）衬底，位于MG-Si衬底上方的重掺杂晶体层Si，位于重掺杂晶体Si层上方的轻掺杂晶体层Si， 位于MG-Si衬底背面的背面欧姆接触层，位于重掺杂晶体Si层上方的钝化层，位于钝化层上方的重掺杂非晶Si层（a-Si）层， 位于重掺杂的a-Si层上方的透明导电氧化物（TCO）和位于TCO层上方的前欧姆接触电极。