公开(公告)号：US20120187292A1

公开(公告)日：2012-07-26

申请号：US13498994

申请日：2010-10-12

申请人： Satoshi Tomimatsu ,  Tsuyoshi Onishi ,  Toshihide Agemura ,  Terutaka Nanri

发明人： Satoshi Tomimatsu ,  Tsuyoshi Onishi ,  Toshihide Agemura ,  Terutaka Nanri

IPC分类号： H01J37/26

CPC分类号： H01J37/3005 ,  H01J37/244 ,  H01J37/28 ,  H01J37/3056 ,  H01J2237/24475 ,  H01J2237/24578 ,  H01J2237/3174

摘要： A charged particle beam apparatus of the present invention comprises a transmission electron detector (113; 206) having a detection portion divided into multiple regions (201 to 205; 301 to 305), wherein a film thickness of a sample is calculated by detecting a transmission electron beam (112) generated from the sample when the sample is irradiated with an electron beam (109), as a signal of each of the regions in accordance with scattering angles of the transmission electron beam, and thereafter calculating the intensities of the individual signals. According to the above, there is provided a charged particle beam apparatus capable of performing accurate film thickness monitoring while suppressing an error due to an external condition and also capable of processing a thin film sample into a sample having an accurate film thickness, which makes it possible to improve the accuracy in structure observations, element analyses and the like.

摘要翻译： 本发明的带电粒子束装置包括具有分成多个区域（201〜205; 301〜305）的检测部的透射电子检测器（113; 206），其中通过检测透射率来计算样品的膜厚度 当用电子束（109）照射样品时从样品产生的电子束（112）作为根据透射电子束的散射角的每个区域的信号，然后计算各个信号的强度 。 根据上述，提供了一种能够在抑制由于外部条件引起的误差的同时进行精确的膜厚度监测并且还能够将薄膜样品加工成具有精确膜厚度的样品的带电粒子束装置，这使得它 可能提高结构观察，元素分析等方面的准确性。

公开(公告)号：US20090121158A1

公开(公告)日：2009-05-14

申请号：US12354153

申请日：2009-01-15

申请人： Satoshi Tomimatsu ,  Miyuki Takahashi ,  Hiroyasu Shichi ,  Muneyuki Fukuda

发明人： Satoshi Tomimatsu ,  Miyuki Takahashi ,  Hiroyasu Shichi ,  Muneyuki Fukuda

IPC分类号： G21G5/00

CPC分类号： H01J37/3056 ,  H01J2237/006 ,  H01J2237/31744 ,  H01J2237/31745

摘要： A specimen fabricating apparatus comprises: a specimen stage, on which a specimen is placed; a charged particle beam optical system to irradiate a charged particle beam on the specimen; an etchant material supplying source to supply an etchant material, which contains fluorine and carbon in molecules thereof, does not contain oxygen in molecules thereof, and is solid or liquid in a standard state; and a vacuum chamber to house therein the specimen stage. A specimen fabricating method comprises the steps of: processing a hole in the vicinity of a requested region of a specimen by means of irradiation of a charged particle beam; exposing the requested region by means of irradiation of the charged particle beam; supplying an etchant material, which contains fluorine and carbon in molecules thereof, does not contain oxygen in molecules thereof, and is solid or liquid in a standard state, to the requested region as exposed; and irradiating the charged particle beam on the requested region as exposed.

摘要翻译： 试样制造装置包括：样品台，放置试样; 带电粒子束光学系统，用于将带电粒子束照射在样本上; 供给来源的蚀刻剂材料在其分子中含有氟和碳的蚀刻剂材料，其分子中不含氧，在标准状态下为固体或液体; 以及在其中容纳样品台的真空室。 试样制造方法包括以下步骤：通过照射带电粒子束来处理试样的要求区域附近的孔; 通过照射带电粒子束使被请求区域曝光; 在其分子中供给含有氟和碳的蚀刻剂材料在其分子中不含氧，并且在标准状态下为固体或液体，暴露于所要求的区域; 以及将所述带电粒子束照射在被请求区域上。

公开(公告)号：US08791413B2

公开(公告)日：2014-07-29

申请号：US13817644

申请日：2011-08-02

申请人： Shinya Kitayama ,  Wataru Suzuki ,  Satoshi Tomimatsu

发明人： Shinya Kitayama ,  Wataru Suzuki ,  Satoshi Tomimatsu

IPC分类号： G01N23/00

CPC分类号： H01J37/261 ,  H01J37/244 ,  H01J37/28 ,  H01J37/3056 ,  H01J2237/024 ,  H01J2237/184 ,  H01J2237/31745 ,  H01J2237/31749

摘要： Provided is a charged particle beam device that outputs both an ion beam and an electron beam at a sample, has a common detector for both the ion beam and the electron beam in the charged particle beam device that processes and observes the sample, and is able to provide a detection unit to an appropriate position corresponding to the process details and observation technique of the sample. Provided are an electron beam optical column in which an electron beam for observing the observation surface of a sample is generated, an ion beam optical column in which an ion beam that processes the sample is generated, a detection device that detects a secondary signal generated from the sample or transmitted electrons, and a sample stage that is capable of mounting the detection device thereon; is rotatable in a horizontal plane that includes the optical axis of the electron beam and the optical axis of the ion beam about a cross point where both optical axes intersect; and is able to change the distance between the observation surface of the sample and the cross point.

摘要翻译： 提供了一种在样品输出离子束和电子束的带电粒子束装置，在处理和观察样品的带电粒子束装置中具有用于离子束和电子束两者的公共检测器，并且能够 以将检测单元提供到对应于样品的处理细节和观察技术的适当位置。 提供了一种电子束光学柱，其中产生用于观察样品观察表面的电子束，产生处理样品的离子束的离子束光学柱，检测装置，其检测从 样品或透射电子，以及能够在其上安装检测装置的样品台; 可以在包括电子束的光轴和离子束的光轴的水平面中绕两个光轴相交的交叉点旋转; 并且能够改变样品的观察表面与交叉点之间的距离。

公开(公告)号：US20110240855A1

公开(公告)日：2011-10-06

申请号：US13133947

申请日：2009-12-04

申请人： Takashi Ohshima ,  Satoshi Tomimatsu

发明人： Takashi Ohshima ,  Satoshi Tomimatsu

IPC分类号： H01J9/02 ,  H01J19/02 ,  H01J37/073

CPC分类号： H01J37/28 ,  H01J37/065 ,  H01J37/075 ,  H01J37/256 ,  H01J2237/06316

摘要： To obtain a SEM capable of both providing high resolution at low acceleration voltage and allowing high-speed elemental distribution measurement, a SE electron source including Zr—O as a diffusion source is shaped so that the radius r of curvature of the tip is more than 0.5 μm and less than 1 μm, and the cone angle α of a conical portion at a portion in the vicinity of the tip at a distance of 3r to 8r from the tip, is more than 5° and less than (8/r)°. Another SE electron source uses Ba—O and includes a barium diffusion supply means composed of a sintered metal and a barium diffusion source containing barium oxide.

摘要翻译： 为了获得能够在低加速电压下提供高分辨率并允许高速元素分布测量的SEM，包括Zr-O作为扩散源的SE电子源被成形为使得尖端的曲率半径r大于 0.5μm以上且小于1μm，顶端附近的3r〜8r的尖部附近的圆锥部的锥角α大于5°且小于（8 / r） °。 另一个SE电子源使用Ba-O，并且包括由烧结金属和含有氧化钡的钡扩散源组成的钡扩散供给装置。

公开(公告)号：US06774363B2

公开(公告)日：2004-08-10

申请号：US10180536

申请日：2002-06-27

申请人： Muneyuki Fukuda ,  Hiroyasu Shichi ,  Satoshi Tomimatsu

发明人： Muneyuki Fukuda ,  Hiroyasu Shichi ,  Satoshi Tomimatsu

IPC分类号： G01N2300

CPC分类号： H01J37/28 ,  G01N23/225 ,  H01J37/026 ,  H01J37/3056

摘要： An apparatus for a charged particle beam has a charged particle source; a charged particle optical system for focusing and deflecting a charged particle beam emitted from the charged particle source; a detector for detecting secondary particles emitted from a sample irradiated with the charged particle beam; and a sample holder on which the sample is mounted. The apparatus has an electrode for preventing charging which is provided so as to be movable with respect to the surface of the sample holder, and a controller for the electrode for preventing charging, which controls a voltage to be applied to the electrode for preventing charging and the movement. Preventing the charging is performed by generating an induced current or a current between an area irradiated with the charged particle beam in the sample and the electrode for preventing charging.

摘要翻译： 带电粒子束的装置具有带电粒子源; 用于聚焦和偏转从带电粒子源发射的带电粒子束的带电粒子光学系统; 用于检测从被照射的带电粒子束的样品发射的二次粒子的检测器; 和其上安装有样品的样品架。 该装置具有用于防止充电的电极，其被设置为能够相对于样品保持器的表面移动，以及用于防止充电的电极的控制器，其控制施加到用于防止充电的电极的电压，以及 运动。 通过在样品中用带电粒子束照射的区域和用于防止充电的电极之间产生感应电流或电流来进行充电。

公开(公告)号：US20130277552A1

公开(公告)日：2013-10-24

申请号：US13976183

申请日：2011-12-08

申请人： Terutaka Nanri ,  Satoshi Tomimatsu ,  Toshihide Agemura

发明人： Terutaka Nanri ,  Satoshi Tomimatsu ,  Toshihide Agemura

IPC分类号： H01J37/304

CPC分类号： H01J37/304 ,  H01J37/3056 ,  H01J2237/2804 ,  H01J2237/30466 ,  H01J2237/31749

摘要： A precision of removal of a damaged layer of a sample created by machining with an FIB machining device depends on a skill of an operator. During removal machining of the damaged layer generated by an ion beam, transmitted electrons which are generated by irradiating an electron beam formed in an electron beam optics system onto a sample are detected by a two-dimensional detector, and a moment for finishing the removal machining of the damaged layer is determined based on the amount of blur of a diffraction pattern acquired with the two-dimensional detector.

摘要翻译： 通过FIB加工装置加工产生的样品的损坏层的去除精度取决于操作者的技能。 在由离子束产生的损伤层的去除加工期间，通过二维检测器检测通过将形成在电子束光学系统中的电子束照射到样品上而产生的透射电子，并且用于完成去除加工的力矩 基于用二维检测器获取的衍射图案的模糊量来确定损坏层。

公开(公告)号：US08115184B2

公开(公告)日：2012-02-14

申请号：US12318583

申请日：2008-12-31

申请人： Hiroyasu Shichi ,  Shinichi Matsubara ,  Takashi Ohshima ,  Satoshi Tomimatsu ,  Tomihiro Hashizume ,  Tohru Ishitani

发明人： Hiroyasu Shichi ,  Shinichi Matsubara ,  Takashi Ohshima ,  Satoshi Tomimatsu ,  Tomihiro Hashizume ,  Tohru Ishitani

IPC分类号： H01J49/00

CPC分类号： H01J27/26 ,  H01J37/08 ,  H01J2237/0805 ,  H01J2237/0807 ,  H01J2237/182

摘要： A gas field ion source that can simultaneously increase a conductance during rough vacuuming and reduce an extraction electrode aperture diameter from the viewpoint of the increase of ion current. The gas field ion source has a mechanism to change a conductance in vacuuming a gas molecule ionization chamber. That is, the conductance in vacuuming a gas molecule ionization chamber is changed in accordance with whether or not an ion beam is extracted from the gas molecule ionization chamber. By forming lids as parts of the members constituting the mechanism to change the conductance with a bimetal alloy, the conductance can be changed in accordance with the temperature of the gas molecule ionization chamber, for example the conductance is changed to a relatively small conductance at a relatively low temperature and to a relatively large conductance at a relatively high temperature.

摘要翻译： 一种气体离子源，其可以在粗吸真空中同时增加电导，并且从离子电流的增加的角度降低提取电极的孔直径。 气体离子源具有改变真空气体分子离子化室中的电导的机理。 也就是说，根据是否从气体分子离子化室抽出离子束，改变对气体分子离子化室进行抽真空的电导。 通过将盖子形成为构成用双金属合金改变电导的机构的部件的部分，可以根据气体分子离子化室的温度来改变电导率，例如，电导率变为相对较小的电导率 相对较低的温度和相对高的温度下的相对较大的电导率。

公开(公告)号：US07989782B2

公开(公告)日：2011-08-02

申请号：US12354153

申请日：2009-01-15

申请人： Satoshi Tomimatsu ,  Miyuki Takahashi ,  Hiroyasu Shichi ,  Muneyuki Fukuda

发明人： Satoshi Tomimatsu ,  Miyuki Takahashi ,  Hiroyasu Shichi ,  Muneyuki Fukuda

IPC分类号： G21G5/00

CPC分类号： H01J37/3056 ,  H01J2237/006 ,  H01J2237/31744 ,  H01J2237/31745

摘要： A specimen fabricating apparatus comprises: a specimen stage, on which a specimen is placed; a charged particle beam optical system to irradiate a charged particle beam on the specimen; an etchant material supplying source to supply an etchant material, which contains fluorine and carbon in molecules thereof, does not contain oxygen in molecules thereof, and is solid or liquid in a standard state; and a vacuum chamber to house therein the specimen stage. A specimen fabricating method comprises the steps of: processing a hole in the vicinity of a requested region of a specimen by means of irradiation of a charged particle beam; exposing the requested region by means of irradiation of the charged particle beam; supplying an etchant material, which contains fluorine and carbon in molecules thereof, does not contain oxygen in molecules thereof, and is solid or liquid in a standard state, to the requested region as exposed; and irradiating the charged particle beam on the requested region as exposed.

摘要翻译： 试样制造装置包括：样品台，放置试样; 带电粒子束光学系统，用于将带电粒子束照射在样本上; 供给来源的蚀刻剂材料在其分子中含有氟和碳的蚀刻剂材料，其分子中不含氧，在标准状态下为固体或液体; 以及在其中容纳样品台的真空室。 试样制造方法包括以下步骤：通过照射带电粒子束来处理试样的要求区域附近的孔; 通过照射带电粒子束使被请求区域曝光; 在其分子中供给含有氟和碳的蚀刻剂材料在其分子中不含氧，并且在标准状态下为固体或液体，暴露于所要求的区域; 以及将所述带电粒子束照射在被请求区域上。

公开(公告)号：US07952083B2

公开(公告)日：2011-05-31

申请号：US12020150

申请日：2008-01-25

申请人： Hiroyasu Shichi ,  Muneyuki Fukuda ,  Yoshinori Nakayama ,  Masaki Hasegawa ,  Satoshi Tomimatsu

发明人： Hiroyasu Shichi ,  Muneyuki Fukuda ,  Yoshinori Nakayama ,  Masaki Hasegawa ,  Satoshi Tomimatsu

IPC分类号： G21K5/08

CPC分类号： H01J37/3056 ,  G01N1/32 ,  H01J27/10 ,  H01J37/09 ,  H01J2237/0458 ,  H01J2237/0835 ,  H01J2237/31745 ,  H01J2237/31749

摘要： An ion beam system includes a sample stage which holds a sample, an ion source which generates an ion beam so that the ion beam is extracted from the ion source along an extraction axis, an irradiation optical system having an irradiation axis along which the ion beam is irradiated toward the sample held on the sample stage, and a charged particle beam observation system for observing a surface of the sample which is machined by the irradiated ion beam. The extraction axis along which the ion beam is extracted from the ion source and the irradiation axis along which the sample is irradiated are inclined with respect to one another.

摘要翻译： 离子束系统包括保持样品的样品台，产生离子束的离子源，使得离子束沿着提取轴从离子源提取;照射光学系统，具有照射轴，沿着该离子束的离子束 照射到保持在样品台上的样品，以及带电粒子束观察系统，用于观察被照射的离子束加工的样品的表面。 离子束从离子源提取的提取轴和样品照射的照射轴相对于彼此倾斜。

公开(公告)号：US07326942B2

公开(公告)日：2008-02-05

申请号：US11210732

申请日：2005-08-25

申请人： Hiroyasu Shichi ,  Muneyuki Fukuda ,  Yoshinori Nakayama ,  Masaki Hasegawa ,  Satoshi Tomimatsu

发明人： Hiroyasu Shichi ,  Muneyuki Fukuda ,  Yoshinori Nakayama ,  Masaki Hasegawa ,  Satoshi Tomimatsu

IPC分类号： H01J37/30 ,  H01J37/305 ,  H01J37/08

CPC分类号： H01J37/3056 ,  G01N1/32 ,  H01J27/10 ,  H01J37/09 ,  H01J2237/0458 ,  H01J2237/0835 ,  H01J2237/31745 ,  H01J2237/31749

摘要： There is a machining method which shortens a cross-section forming time by an ion beam, a machining method which shortens a machining time for separating a micro sample from a wafer, and an ion beam machining system. The ion beam machining system has a vacuum container containing a duoplasmatron, non-axially symmetric ion beam lens and stencil mask, wherein a micro sample is removed from a sample by an argon ion beam having a steep beam profile in a direction perpendicular to the cross-section. The cross-section observations for wafer inspection/defect analysis used in device manufacture can be obtained in a short time. Further, there is a inspection/analysis method which does not cause defects even if a sample is removed and a wafer is returned to the process.

摘要翻译： 存在通过离子束缩短截面形成时间的加工方法，缩短用于从晶片分离微型样品的加工时间的加工方法以及离子束加工系统。 离子束加工系统具有含有双质子，非轴对称的离子束透镜和模板掩模的真空容器，其中通过具有垂直于十字的方向的陡峭波束轮廓的氩离子束从样品中除去微量样品 -部分。 用于器件制造的晶圆检查/缺陷分析的横截面观察可以在短时间内获得。 此外，存在即使去除样品并且晶片返回到该过程也不会引起缺陷的检查/分析方法。