摘要:
A nitride semiconductor device comprises: a substrate body including a conductive substrate portion and a high resistance portion; a first semiconductor layer of a nitride semiconductor provided on the substrate body; a second semiconductor layer provided on the first semiconductor layer; a first main electrode provided on the second semiconductor layer; a second main electrode provided on the second semiconductor layer; and a control electrode provided on the second semiconductor layer between the first main electrode and the second main electrode. The second semiconductor layer is made of a nondoped or n-type nitride semiconductor having a wider bandgap than the first semiconductor layer. The first main electrode is provided above the conductive portion and the second main electrode is provided above the high resistance portion.
摘要:
In an RFID tag mounting package mounted with an RFID tag and a manufacturing method thereof, in order to have sufficient communication performance without spoiling the design property of the package to which a conductive film is applied, a package is obtained by assembling a structural material in which a metallic film is formed on a base material made of paper or the like. In the package, a slot is provided in the metallic film of a folded portion, in a spot where portions (the folded portion and an external packaging portion) of the structural material overlap each other. An inlet operates as an RFID tag, includes an antenna and an IC chip connected to the antenna, and is mounted on the inner surface of the folded portion in conformity with the position of the slot.
摘要:
Imidazole derivatives of the formula (1) or salts thereof, pharmaceuticals containing the derivatives or the salts, and intermediates for the synthesis of the derivatives or the salts (wherein R1 is lower alkyl; R2 is alkyl or aralkyl; and X1 is halogeno). These compounds exhibit G-CSF-like activities and can be substituted for G-CSF preparations.
摘要翻译:式(1)的咪唑衍生物或其盐,含有衍生物或盐的药物,以及用于合成衍生物或盐的中间体(其中R 1为低级烷基; R 2为烷基或芳烷基; X 1为卤素)。 这些化合物表现出G-CSF样活性,可代替G-CSF制剂。
摘要:
Disclosed herein are substituted benzylurea derivatives represented by the following general formula (1): ##STR1## wherein R.sup.1 and R.sup.2 are independently H, a halogen atom, or an alkyl or alkoxyl group, R.sup.3 is a phenyl or heterocyclic group which may be substituted, n is an integer of 1-6, and R.sup.4 is a phenyl group which may be substituted, or salts thereof, and medicines comprising such a derivative as an active ingredient. The derivatives or salts thereof strongly inhibit only ACAT in macrophages and are hence useful as prophylactic and therapeutic agents for arteriosclerosis.
摘要:
In an RFID tag mounting package mounted with an RFID tag and a manufacturing method thereof, in order to have sufficient communication performance without spoiling the design property of the package to which a conductive film is applied, a package is obtained by assembling a structural material in which a metallic film is formed on a base material made of paper or the like. In the package, a slot is provided in the metallic film of a folded portion, in a spot where portions (the folded portion and an external packaging portion) of the structural material overlap each other. An inlet operates as an RFID tag, includes an antenna and an IC chip connected to the antenna, and is mounted on the inner surface of the folded portion in conformity with the position of the slot.
摘要:
A light emitting device includes a light emitting element emitting an excitation light and a fluorescent element. The fluorescent element includes a semi-translucent film facing the light emitting element, and transmits the excitation light; a first luminescent film including phosphors to absorb the excitation light transmitted through the semi-translucent film and to emit a visible light having a different wavelength than the excitation light; and a reflection film disposed on an opposite side of the first luminescent film on which the semi-translucent film is disposed, reflecting the excitation light transmitted through the first luminescent film towards the first luminescent film.
摘要:
Described is a pyridine derivative represented by the following formula (1): ##STR1## wherein R.sup.1 and R.sup.2 individually represent H, an alkyl group, a cycloalkyl group, a hydroxyalkyl group, an alkoxyalkyl group which may have a substituent, a carboxyalkyl group, an alkoxycarbonylalkyl group, an aralkyl group which may have a substituent, a phenacyl group or an acyl group, R.sup.3 represents an alkyl group, a phenyl group which may have a substituent, a heteroaryl group or a cyclic amino group, X represents O or combination of OH and H, or a salt thereof; and a medicament, such as cytokine production suppressant, comprising the derivative or salt thereof as an effective ingredient. The invention compound has potential, highly specific and highly safe immunoregulating capacity so that it can suppress the excessive production of a specific cytokine in various diseases related to the immune system.
摘要:
Disclosed herein are substituted vinylurea derivatives represented by the following general formula (1): ##STR1## wherein R.sup.1 and R.sup.3 are independently a phenyl group which may be substituted, R.sup.2 is a phenyl group which may be substituted, or a cycloalkyl group, and wave lines mean that the bonding state may be either E or Z, with the proviso that the cases where R.sup.1, R.sup.2 and R.sup.3 are unsubstituted phenyl groups, and where R.sup.1 and R.sup.2 are unsubstituted phenyl groups and R.sup.3 is a 4-ethoxyphenyl group are excluded, or salt thereof, and medicines comprising such a derivative as an active ingredient as well as a method of preventing and treating arteriosclerosis with such a medicine. The derivatives or salts thereof selectively and strongly inhibit ACAT in macrophages and are hence useful as prophylactic and therapeutic agents for arteriosclerosis.
摘要:
A nitride semiconductor device comprises: a substrate body including a conductive substrate portion and a high resistance portion; a first semiconductor layer of a nitride semiconductor provided on the substrate body; a second semiconductor layer provided on the first semiconductor layer; a first main electrode provided on the second semiconductor layer; a second main electrode provided on the second semiconductor layer; and a control electrode provided on the second semiconductor layer between the first main electrode and the second main electrode. The second semiconductor layer is made of a nondoped or n-type nitride semiconductor having a wider bandgap than the first semiconductor layer. The first main electrode is provided above the conductive portion and the second main electrode is provided above the high resistance portion.