Nitride semiconductor device
    71.
    发明授权
    Nitride semiconductor device 失效
    氮化物半导体器件

    公开(公告)号:US07498618B2

    公开(公告)日:2009-03-03

    申请号:US11507493

    申请日:2006-08-22

    IPC分类号: H01L29/778

    摘要: A nitride semiconductor device comprises: a substrate body including a conductive substrate portion and a high resistance portion; a first semiconductor layer of a nitride semiconductor provided on the substrate body; a second semiconductor layer provided on the first semiconductor layer; a first main electrode provided on the second semiconductor layer; a second main electrode provided on the second semiconductor layer; and a control electrode provided on the second semiconductor layer between the first main electrode and the second main electrode. The second semiconductor layer is made of a nondoped or n-type nitride semiconductor having a wider bandgap than the first semiconductor layer. The first main electrode is provided above the conductive portion and the second main electrode is provided above the high resistance portion.

    摘要翻译: 一种氮化物半导体器件包括:衬底本体,包括导电衬底部分和高电阻部分; 设置在基板主体上的氮化物半导体的第一半导体层; 设置在所述第一半导体层上的第二半导体层; 设置在所述第二半导体层上的第一主电极; 设置在所述第二半导体层上的第二主电极; 以及设置在第一主电极和第二主电极之间的第二半导体层上的控制电极。 第二半导体层由具有比第一半导体层宽的带隙的非掺杂或n型氮化物半导体制成。 第一主电极设置在导电部分的上方,第二主电极设置在高电阻部分的上方。

    RFID TAG MOUNTING PACKAGE AND MANUFACTURING METHOD THEREOF
    72.
    发明申请
    RFID TAG MOUNTING PACKAGE AND MANUFACTURING METHOD THEREOF 失效
    RFID标签安装包及其制造方法

    公开(公告)号:US20090027210A1

    公开(公告)日:2009-01-29

    申请号:US12039453

    申请日:2008-02-28

    IPC分类号: G08B13/22

    摘要: In an RFID tag mounting package mounted with an RFID tag and a manufacturing method thereof, in order to have sufficient communication performance without spoiling the design property of the package to which a conductive film is applied, a package is obtained by assembling a structural material in which a metallic film is formed on a base material made of paper or the like. In the package, a slot is provided in the metallic film of a folded portion, in a spot where portions (the folded portion and an external packaging portion) of the structural material overlap each other. An inlet operates as an RFID tag, includes an antenna and an IC chip connected to the antenna, and is mounted on the inner surface of the folded portion in conformity with the position of the slot.

    摘要翻译: 在安装有RFID标签的RFID标签安装封装及其制造方法中,为了具有足够的通信性能而不破坏施加导电膜的封装的设计特性,通过将结构材料组装在 在由纸等制成的基材上形成金属膜。 在封装中,在折叠部分的金属膜中,在结构材料的部分(折叠部分和外部包装部分)彼此重叠的位置处设置有槽。 入口作为RFID标签进行操作,包括天线和连接到天线的IC芯片,并且根据槽的位置安装在折叠部分的内表面上。

    RFID tag mounting package and manufacturing method thereof
    75.
    发明授权
    RFID tag mounting package and manufacturing method thereof 失效
    RFID标签安装封装及其制造方法

    公开(公告)号:US08035524B2

    公开(公告)日:2011-10-11

    申请号:US12039453

    申请日:2008-02-28

    IPC分类号: G08B13/14

    摘要: In an RFID tag mounting package mounted with an RFID tag and a manufacturing method thereof, in order to have sufficient communication performance without spoiling the design property of the package to which a conductive film is applied, a package is obtained by assembling a structural material in which a metallic film is formed on a base material made of paper or the like. In the package, a slot is provided in the metallic film of a folded portion, in a spot where portions (the folded portion and an external packaging portion) of the structural material overlap each other. An inlet operates as an RFID tag, includes an antenna and an IC chip connected to the antenna, and is mounted on the inner surface of the folded portion in conformity with the position of the slot.

    摘要翻译: 在安装有RFID标签的RFID标签安装封装及其制造方法中,为了具有足够的通信性能而不破坏施加导电膜的封装的设计特性,通过将结构材料组装在 在由纸等制成的基材上形成金属膜。 在封装中,在折叠部分的金属膜中,在结构材料的部分(折叠部分和外部包装部分)彼此重叠的位置处设置有槽。 入口作为RFID标签进行操作,包括天线和连接到天线的IC芯片,并且根据槽的位置安装在折叠部分的内表面上。

    Nitride semiconductor device
    80.
    发明申请
    Nitride semiconductor device 失效
    氮化物半导体器件

    公开(公告)号:US20070051977A1

    公开(公告)日:2007-03-08

    申请号:US11507493

    申请日:2006-08-22

    IPC分类号: H01L31/00 H01L21/336

    摘要: A nitride semiconductor device comprises: a substrate body including a conductive substrate portion and a high resistance portion; a first semiconductor layer of a nitride semiconductor provided on the substrate body; a second semiconductor layer provided on the first semiconductor layer; a first main electrode provided on the second semiconductor layer; a second main electrode provided on the second semiconductor layer; and a control electrode provided on the second semiconductor layer between the first main electrode and the second main electrode. The second semiconductor layer is made of a nondoped or n-type nitride semiconductor having a wider bandgap than the first semiconductor layer. The first main electrode is provided above the conductive portion and the second main electrode is provided above the high resistance portion.

    摘要翻译: 一种氮化物半导体器件包括:衬底本体,包括导电衬底部分和高电阻部分; 设置在基板主体上的氮化物半导体的第一半导体层; 设置在所述第一半导体层上的第二半导体层; 设置在所述第二半导体层上的第一主电极; 设置在所述第二半导体层上的第二主电极; 以及设置在第一主电极和第二主电极之间的第二半导体层上的控制电极。 第二半导体层由具有比第一半导体层宽的带隙的非掺杂或n型氮化物半导体制成。 第一主电极设置在导电部分的上方,第二主电极设置在高电阻部分的上方。