公开(公告)号：US6159286A

公开(公告)日：2000-12-12

申请号：US185930

申请日：1998-11-04

Applicant: Chien-Min Sung

Inventor： Chien-Min Sung

IPC: B24D3/00 ,  B01J3/06 ,  B23P15/28 ,  B24D7/06 ,  B24D11/06 ,  B24D99/00 ,  C22C1/05 ,  C22C26/00 ,  E21B10/56 ,  E21B10/567 ,  C30B19/02 ,  C30B29/04

CPC classification number: E21B10/5676 ,  B01J3/062 ,  B23P15/28 ,  B24D7/066 ,  B24D99/005 ,  C22C1/051 ,  C22C26/00 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0645 ,  B01J2203/0655 ,  B01J2203/066 ,  B01J2203/068 ,  B01J2203/0685 ,  B22F2005/001 ,  B22F2999/00 ,  C22C2204/00

Abstract: The present invention describes a novel abrasive tool that contains abrasive particles distributed in a predetermined pattern. Such a pattern is produced by fabricating two-dimensional slices and subsequently assembling and consolidating them into a three-dimensional tool. Abrasive particles 20 may be incorporated during the process of making these two-dimensional slices, or they may be planted afterwards into these slices 100 that contains matrix powder. In the latter case, the planting may be guided by a template 110 with apertures 114 laid in a specific pattern.

Abstract translation: 本发明描述了一种新颖的研磨工具，其包含以预定图案分布的磨料颗粒。 这种图案通过制造二维切片并随后将它们组装和整合成三维工具来产生。 研磨颗粒20可以在制造这些二维切片的过程中引入，或者它们可以后来种植到含有基质粉​​末的这些切片100中。 在后一种情况下，种植可以由具有以特定图案布置的孔114的模板110引导。

公开(公告)号：US5980982A

公开(公告)日：1999-11-09

申请号：US629516

申请日：1996-04-09

Applicant: Junji Degawa ,  Kazuwo Tsuji ,  Akifumi Fujioka ,  Yasushi Goda

Inventor： Junji Degawa ,  Kazuwo Tsuji ,  Akifumi Fujioka ,  Yasushi Goda

IPC: B01J2/00 ,  B01J3/06 ,  C30B29/04

CPC classification number: B01J3/062 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/068

Abstract: A coated particle for synthesizing diamond includes: a single crystal of a fine diamond particle coated with at least one layer which contains at least one kind of solvent metal powder for synthesizing diamond and/or at least one kind of solvent metal powder with organic bonding material. Diamond abrasive particles for sawing are produced by a process which includes the steps of: coating fine diamond particles with at least one layer which contains at least one kind of solvent metal powder for synthesizing diamond and/or at least one kind of solvent metal powder with organic bonding material, filling a molding with the coated fine diamond particles, compacting, arranging a compact in a synthesizing vessel, heating the compact to a temperature above a solvent metal-graphite melting point under a pressure condition in which diamond is thermodynamically stable, and recovering the diamond abrasive particles.

Abstract translation: 用于合成金刚石的涂覆颗粒包括：涂覆有至少一层的细金刚石颗粒的单晶，其包含至少一种用于合成金刚石的溶剂金属粉末和/或至少一种溶剂金属粉末与有机粘合材料 。 用于锯切的金刚石磨料颗粒通过包括以下步骤的方法生产：包括至少一层的精细金刚石颗粒，所述至少一层包含至少一种用于合成金刚石和/或至少一种溶剂金属粉末的溶剂金属粉末， 有机粘合材料，用涂覆的金刚石颗粒填充模塑件，压实，在合成容器中设置压块，在金刚石热力学稳定的压力条件下将压块加热至高于溶剂金属 - 石墨熔点的温度，以及 回收金刚石磨料颗粒。

公开(公告)号：US5908503A

公开(公告)日：1999-06-01

申请号：US567428

申请日：1995-12-05

Applicant: Hitoshi Sumiya ,  Naohiro Toda ,  Shuichi Satoh

Inventor： Hitoshi Sumiya ,  Naohiro Toda ,  Shuichi Satoh

IPC: B01J3/06 ,  C30B11/00 ,  C30B29/04

CPC classification number: B01J3/062 ,  B01J2203/061 ,  B01J2203/0655 ,  B01J2203/068

Abstract: A colorless, transparent low defect density, synthetic type IIa diamond single crystal, in which the etch pits due to needle-shaped defects are at most 3.times.10.sup.5 pieces/cm.sup.2, and which can be applied to uses needing high crystallinity of diamond, for example, monochromators, semiconductor substrates, spectroscopic crystals in X-ray range, electronic materials, etc., is provided by a process for the production of the colorless, transparent low defect density, synthetic diamond single crystal by growing new diamond crystal on a seed crystal of diamond by the temperature gradient method which comprises using a crystal defect-free diamond single crystal, as a seed crystal of diamond, and optionally subjecting to a heat treatment in a non-oxidizing atmosphere at a low pressure and a temperature of 1100 to 1600.degree. C.

Abstract translation: 无色，透明的低缺陷密度的合成IIa型金刚石单晶，其中由于针状缺陷引起的蚀刻坑最多为3×10 5个/ cm 2，并且其可以应用于需要高结晶度的金刚石，例如， 单色仪，半导体衬底，X射线范围内的分光晶体，电子材料等，通过生产无色透明低缺陷密度合成金刚石单晶的方法提供，通过在晶种上生长新的金刚石晶体 金刚石，其包括使用无晶体缺陷金刚石单晶作为金刚石的晶种，并且可选地在低压和1100至1600℃的非氧化性气氛中进行热处理。 C。

公开(公告)号：US5756061A

公开(公告)日：1998-05-26

申请号：US796932

申请日：1991-11-25

Applicant: John L. White

Inventor： John L. White

IPC: B01J3/06 ,  C01B31/06

CPC classification number: C01B31/06 ,  B01J3/062 ,  B01J2203/0605 ,  B01J2203/0635 ,  B01J2203/0655 ,  B01J2203/068

Abstract: Diamonds are synthesized from SiC at temperatures and/or pressures lower than those required to convert amorphous carbon or graphite to diamond, by heating the SiC in the absence of another non-diamondaceous source of elemental carbon and in the presence of a reactant which selectively reacts with the Si at the temperature to which the SiC is heated, and in a matrix which is frangible when cooled, while the Sic is within the diamond stable region of the diamond-graphite phase diagram, thereby permitting the diamond to be separated therefrom by physical means.

Abstract translation: 在不存在另外非金刚石元素碳的情况下加热SiC并且在有选择地反应的反应物的存在下，通过在不存在另外的非金刚石的元素碳的情况下加热SiC，在低于通过将无定形碳或石墨转化为金刚石所需要的温度和/或压力下， 其中Si在加热SiC的温度下，以及当被冷却时易碎的基体，而Sic位于金刚石 - 石墨相图的金刚石稳定区域内，从而允许金刚石与物理层分离 手段。

公开(公告)号：US5360477A

公开(公告)日：1994-11-01

申请号：US24948

申请日：1993-03-02

Applicant: Tohru Inoue ,  Masaya Kadono ,  Akiharu Miyanaga

Inventor： Tohru Inoue ,  Masaya Kadono ,  Akiharu Miyanaga

IPC: B01J3/06 ,  B01J19/12 ,  C01B31/06 ,  C30B1/12 ,  C30B29/00

CPC classification number: C01B31/06 ,  B01J19/123 ,  B01J3/062 ,  B01J3/065 ,  C30B1/12 ,  C30B29/02 ,  B01J2203/0615 ,  B01J2203/0625 ,  B01J2203/0655 ,  B01J2203/068 ,  Y10S117/904

Abstract: A process for fabricating diamond from a starting powder material containing carbon as the principal component, and said process comprising bringing said powder material under high pressure, wherein, said powder material containing carbon as the principal component is a powder material containing C.sub.60 and/or carbon microtubules as the principal component, andsaid powder material is brought under high pressure by applying a gradient pressure to the material, while the portion of the powder material to which maximum pressure is applied is irradiated by a laser beam optionally through a diamond window material. An apparatus for fabricating diamond is also described.

Abstract translation: 一种从含有碳作为主要成分的起始粉末材料制造金刚石的方法，所述方法包括使所述粉末材料在高压下进行，其中所述含有碳为主要成分的粉末材料是含有C 60和/或碳的粉末材料 微管作为主要成分，并且通过对材料施加梯度压力使所述粉末材料处于高压下，同时施加最大压力的粉末材料部分可以通过激光束任选地通过金刚石窗材料照射。 还描述了一种用于制造金刚石的装置。

公开(公告)号：US5273730A

公开(公告)日：1993-12-28

申请号：US854757

申请日：1992-03-20

Applicant: Katsuhito Yoshida ,  Kazuo Tsuji

Inventor： Katsuhito Yoshida ,  Kazuo Tsuji

IPC: B01J3/06 ,  C01B31/06

CPC classification number: B01J3/062 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/068

Abstract: Synthesis of diamond by the so-called thin solvent film method is improved to obtain diamond crystals with a large grain size and good quality in an economical manner. To this end, using a reaction system comprising diamond seed crystal, a carbon source and a solvent metal, one or more masses of the solvent metal are arranged independently of each other and the diamond seed crystals are arranged in such a manner that one surface of the diamond seed crystal is contacted with each solvent metal mass.

Abstract translation: 通过所谓的薄溶剂膜方法合成金刚石得到改善，以经济的方式获得具有大晶粒尺寸和良好质量的金刚石晶体。 为此，使用包含金刚石晶种，碳源和溶剂金属的反应体系，一个或多个溶剂金属块彼此独立地排列，并且金刚石晶种以这样的方式排列： 金刚石晶种与每种溶剂金属块接触。

公开(公告)号：US5043219A

公开(公告)日：1991-08-27

申请号：US467542

申请日：1990-01-19

Applicant: Katsuhito Yoshida ,  Kazuwo Tsuji

Inventor： Katsuhito Yoshida ,  Kazuwo Tsuji

IPC: B01J3/06 ,  C01B21/064 ,  C01B31/06 ,  C30B9/00 ,  C30B29/04 ,  C30B29/38 ,  H01L21/20 ,  H01L29/20 ,  H01L29/207 ,  H01L29/267 ,  H01S5/00 ,  H01S5/02 ,  H01S5/32

CPC classification number: H01L33/32 ,  B01J3/062 ,  C30B29/04 ,  C30B29/38 ,  C30B9/00 ,  H01L21/02376 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02658 ,  H01L29/20 ,  H01L29/207 ,  H01L29/267 ,  H01L33/007 ,  B01J2203/062 ,  B01J2203/0645 ,  B01J2203/0655 ,  B01J2203/066 ,  B01J2203/068 ,  Y10S148/113 ,  Y10T428/30

Abstract: A composite material useful as a diode capable of operating at a high temperature, i.e., 500.degree. to 600.degree. C. or a semiconductor optical device capable of emitting ultraviolet rays is provided which comprises an electrically insulating single crystal diamond substrate and single crystal cubic boron nitride directly formed on one surface of the single crystal diamond in such a manner that the single crystal cubic boron nitride has the same plane index as the substrate.

公开(公告)号：US4547257A

公开(公告)日：1985-10-15

申请号：US654295

申请日：1984-09-25

Applicant: Eiichi Iizuka ,  Tomoji Sando ,  Shinji Kashima

Inventor： Eiichi Iizuka ,  Tomoji Sando ,  Shinji Kashima

IPC: B01J3/06 ,  C30B29/04

CPC classification number: B01J3/062 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/068

Abstract: Diamond crystals are grown by subjecting reaction materials of nondiamond carbon, a solvent metal, and diamond seeds to pressure and temperature conditions in the diamond-stable region. The reaction materials are in the form of a pair of a superimposed solvent metal plate and a nondiamond carbon plate or a pile made of a plurality of the pairs of the superimposed solvent metal plate and nondiamond carbon plate, and a plurality of the seeds are disposed on either one or each of the confronting surfaces of the pair of the superimposed solvent metal plate and nondiamond carbon plate. Alternatively, the reaction materials are in the form of a plate made of a mixture of the solvent metal and the nondiamond carbon or a pile made of a plurality of the mixture plates, and a plurality of the seeds are disposed on a surface of each plate. The seeds have a particle size of not larger than 50 .mu.m and are regularly disposed in such a manner that the seeds are located at a substantially equal distance and the distance between the peripheries of every two adjacent growth diamond crystal particles is from 50 to 300 .mu.m. The diamond crystals are allowed to grow until their sizes reach at least five times the size of the seeds.

Abstract translation: 金刚石晶体通过使非金刚石碳，溶剂金属和金刚石晶种的反应材料经受金刚石稳定区域中的压力和温度条件而生长。 反应材料是一对叠加的溶剂金属板和非金刚石碳板或由多对叠加的溶剂金属板和非金刚石碳板制成的桩的形式，并且设置多个种子 在一对叠加的溶剂金属板和非金刚石碳板的一个或每个相对表面上。 或者，反应材料为由溶剂金属和非金刚石碳的混合物制成的板或由多个混合物板制成的堆的形式，并且多个种子设置在每个板的表面上 。 种子具有不大于50μm的粒度，并且以这样的方式规则地设置种子，其距离基本相等，并且每两相邻的生长金刚石晶体颗粒的周边之间的距离为50至300 亩 允许金刚石晶体生长直到其尺寸达到种子大小的至少五倍。

公开(公告)号：US4544540A

公开(公告)日：1985-10-01

申请号：US506935

申请日：1983-06-22

Applicant: Kazuo Tsuji

Inventor： Kazuo Tsuji

IPC: B01J3/06 ,  C30B9/00 ,  C30B13/02 ,  C01B31/06

CPC classification number: C30B13/02 ,  B01J3/062 ,  C30B29/04 ,  C30B9/00 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0625 ,  B01J2203/0655 ,  B01J2203/068

Abstract: An artificial diamond single crystal, a process for producing it, and tools for utilizing it are disclosed. The artificial diamond crystal has at least one surface which has a rough surface formed by suppressed crystal growth at that surface. The single crystal is produced by providing a diamond synthesis reaction system comprised of a reaction chamber, a carbon source and a solvent metal arranged in contact with the carbon source. A seed crystal is provided in the reaction chamber under elevated pressures and temperatures which permit diamond to be maintained thermodynamically stable. The reaction system is heated to provide a temperature gradient in such a way that a portion of the solvent metal in contact with the carbon source is higher in temperature than a portion of the solvent metal in contact with the seed crystal. This temperature gradient causes a migration of the carbon from the higher temperature portion to the lower temperature portion using the solvent metal as a medium. This allows the carbon to precipitate and grow as diamond on the seed crystal due to the difference in solubility caused by the temperature gradient. The conditions in the reaction chamber housing are maintained so as to suppress crystal growth in at least one direction perpendicular to the direction of the temperature gradient, at the end of the solvent metal. The suppressed crystal growth provides the rough surface of the single crystal which can be connected to a tool and thus provides good adherence between the crystal and the tool.

Abstract translation: 公开了一种人造金刚石单晶，其制造方法及其利用工具。 人造金刚石晶体具有至少一个表面，其具有通过在该表面处抑制晶体生长而形成的粗糙表面。 通过提供由反应室，碳源和布置成与碳源接触的溶剂金属组成的金刚石合成反应系统来生产单晶。 在升高的压力和温度下在反应室中提供晶种，这允许金刚石在热力学上保持稳定。 将反应体系加热以提供温度梯度，使得与碳源接触的溶剂金属的一部分温度高于与晶种接触的溶剂金属的一部分。 该温度梯度使用溶剂金属作为介质使碳从较高温度部分迁移到较低温度部分。 这允许碳由于温度梯度引起的溶解度的差异而在晶种上沉淀和生长为金刚石。 保持反应室壳体中的条件，以便在溶剂金属末端的至少一个垂直于温度梯度方向的方向上抑制晶体生长。 抑制的晶体生长提供可以连接到工具的单晶的粗糙表面，从而在晶体和工具之间提供良好的粘附。

公开(公告)号：US4340576A

公开(公告)日：1982-07-20

申请号：US148214

申请日：1980-05-09

Applicant: Herbert M. Strong

Inventor： Herbert M. Strong

IPC: B01J3/06 ,  C01B31/06

CPC classification number: B01J3/062 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/068

Abstract: Means are described for suppressing spontaneous diamond nucleation in the vicinity of diamond seed material located in reaction vessel construction used in the growth of diamond by the process disclosed in U.S. Pat. No. 3,297,407--Wentorf, Jr.In assembly of the reaction vessel a portion of the lower surface of the plug of catalyst-solvent metal is disposed in contact with the diamond seed material. Preferably all of the balance of the lower surface area of the catalyst-solvent plug adjacent the seed material is covered with a disc or layer of a material different from the catalyst-solvent metal employed and selected from a list of specific materials that suppress diamond nucleation.

Abstract translation: 描述了用于通过美国专利公开的方法在位于用于生长金刚石的反应容器结构中的金刚石种子材料附近抑制自发金刚石成核的方法。 在反应容器的组装中，催化剂 - 溶剂金属的塞的下表面的一部分与金刚石种子材料接触。 优选地，邻近种子材料的催化剂 - 溶剂塞的下表面积的所有平衡被不同于所使用的催化剂 - 溶剂金属的材料的盘或层覆盖，并且选自抑制金刚石成核的具体材料的列表 。