Abstract:
A nonlinear optical device, operating in an optical bistability mode, capable of carrying out amplification, commutation, switching and computing of optical signals, comprises, a pair of directional couplers formed by optically coupling a pair of waveguides and a pair of nonlinear circular resonators and an optical transistor incorporating an optical mixer of bifurcation optical active type capable of functioning also as a phase modulator.
Abstract:
Operation results for all combinations of input optical signal values to be operated are previously determined and substantially parallel light beams reflecting the operation results for all combinations are generated. Selectors for selecting transmission area of the input light beams in accordance with digital information born by optical signals are arranged for the respective optical signals along the direction of propagation of the light beams. Through the logically cascade-connected selectors, an optical signal corresponding to a combination of current input optical signals is selected from the operation results for all combinations.
Abstract:
An optical switching device comprises a material which exhibits third order optical nonlinearity (X.sup.(3)) at frequencies just below the band gap of the material, a room temperature and at a wavelength of approximately 1.55.mu.. The switching device is particularly useful for optical communication applications. The preferred material is n-Al.sub.x Ga.sub.1-x Sb, where x is approximately 0.1. Additional preferred materials are those which have a band gap (at .GAMMA.) just above the photon energy of the system and have a subsidiary conduction band (at X or L) approximately 0.1 ev above the E.sub.o level at .GAMMA. at a predetermined wavelength. Such alloy systems include (AlGaIn)As with 0.635.mu..ltoreq..lambda..ltoreq.0.672.mu., and (AlGaIn)P with 0.56.mu..ltoreq..lambda..ltoreq.0.65.mu..
Abstract translation:光学开关装置包括在低于材料带隙的频率,室温和约1.55μm的波长处呈现三阶光学非线性(X(3))的材料。 开关装置对光通信应用特别有用。 优选的材料是n-Al x Ga 1-x Sb,其中x为约0.1。 另外优选的材料是具有刚好高于系统的光子能量的带隙(GAMMA)的那些,并且具有在预定波长的GAMMA处的Eo电平以上约0.1ev的辅助导带(在X或L处)。 这种合金体系包括(AlGaIn)As,0.635μm,0.672μm,(AlGaIn)P为0.56μm,λ=0.65μm。
Abstract:
An optical operational memory device comprises a light-emitting device, a first and second phototransistors, and a load resistor. The light-emitting device and the first phototransistor are connected electrically in series to form an optical bistable switch based on optical positive feedback. The second phototransistor is connected in parallel to the optical bistable switch, and the load resistor is connected in series to the optical bistable switch. The time constant given by the product of the current gain of the second phototransistor, the base-collector capacitance of the second phototransistor, and the resistance of the load resistor is larger than the period required for recombination of the excess majority carriers in the base of the first phototransistor. A single optical beam modulated with pulse signals is input to the first and the second phototransistors simultaneously. The optical pulse with a peak power in a predetermined range turns the optical bistable switch on, and the pulse with higher peak power turns the optical bistable switch off.
Abstract:
Enhanced optical information processing capability is achieved by providing a self-electrooptic effect device (SEED) which modulates one or more power supply beams to provide integer gain in an input optical signal. This "integer gain" SEED includes a predetermined number of quantum well diodes electrically connected in series with a current supply so that, at steady state, each quantum well diode conducts the same current and thus absorbs the same amount of optical power. An optical input signal is replicated by configuring the quantum well diodes such that each quantum well diode receives its own power supply beam. The optical input signal is amplified by configuring the quantum well diodes such that a single power supply beam passes through all of the quantum well diodes.
Abstract:
A photodiode (26) receives an optical input signal (P1) and an internal optical signal (P2) and supplies in response thereto an internal electrical signal (I2), which in turn controls a laser (4) which effects amplification and supplies the internal optical signal and an output signal (P3). The feedback loop formed by this photodiode and laser leads to a strong non-linearity in the variation of the output signal as a function of the input signal. The invention is useful especially in optical fiber telecommunications systems.
Abstract:
An optical binary data processor which utilizes a plurality of light beams (or other waves, such as sound waves) which diffract at two or more apertures and which interfere such that the resulting pattern of illumination may be read to yield a particular logic operation. The optical data processor is capable of performing conventional binary logic operations on anywhere from two to N optical inputs, and multiple processors may be cascaded to perform any level of combinational logic.
Abstract:
A wide band distributed Bragg reflector having a reflectivity extremely greater than that of a narrow band distributed Bragg reflector mirror portion on the output side of a bistable type wavelength conversion device is arranged on the incident side. The input light in TM polarization mode is used as an input signal light and the wavelength conversion is performed by tuning the narrow band distributed Bragg reflection mirror portion on the output side from which an output light in TE polarization mode outgoes perpendicularly to the input light. The input signal light and the output signal light are polarized in such a manner that they are perpendicular to one another and, therefore, the device can be realized as a one-directional device. The use of any isolator is not required.
Abstract:
An optical system includes a first light emitting device for emitting a first polarized light beam other than a linearly polarized light beam, and a second light emitting device for emitting a second polarized light beam other than the linearly polarized light beam. The second polarized light beam has a pulse waveform. The optical system also includes a semiconductor device receiving the first and second polarized light beams. The semiconductor device has heavy holes and light holes. Each of the first and second polarized light beams has a wavelength which excites either heavy holes or light holes so that electrons are generated. The second polarized light beam is projected onto the semiconductor device in a state where the first polarized light beam is being projected onto the semiconductor device. The optical system further includes a light receiving device for receiving the first polarized light beam which has an intensity peak caused by the second polarized light beam and which decreases due to a spin relaxation of the electrons.
Abstract:
For use, e.g., as a fast acting microminiature optical switch, modulator, or oscillator in integrated optics, a device is provided with a light-sensitive element (12-20) whose electrical state can be influenced optically. The element (12-20) includes electrically biased semiconductor layers (15-17) which form a resonant-tunneling structure, and the electrical state is switched by radiation (23, 25) having quantum-well bandgap energy. The change in electrical state is accompanied by a change in opacity or refractive index, permitting optical read-out (24, 26).