Near field metrology
    83.
    发明授权

    公开(公告)号:US10261014B2

    公开(公告)日:2019-04-16

    申请号:US14583447

    申请日:2014-12-26

    摘要: Metrology systems and methods are provided herein, which comprise an optical element that is positioned between an objective lens of the system and a target. The optical element is arranged to enhance evanescent modes of radiation reflected by the target. Various configurations are disclosed: the optical element may comprise a solid immersion lens, a combination of Moiré-elements and solid immersion optics, dielectric-metal-dielectric stacks of different designs, and resonating elements to amplify the evanescent modes of illuminating radiation. The metrology systems and methods are configurable to various metrology types, including imaging and scatterometry methods.

    Based device risk assessment
    84.
    发明授权

    公开(公告)号:US10223492B1

    公开(公告)日:2019-03-05

    申请号:US14178866

    申请日:2014-02-12

    IPC分类号: G06F17/50 G06F11/00 H01J37/26

    摘要: The process for design based assessment includes the following steps. First, the process defines multiple patterns of interest (POIs) utilizing design data of a device and then generates a design based classification database. Further, the process receives one or more inspection results. Then, the process compares the inspection results to each of the plurality of POIs in order to identify occurrences of the POIs in the inspection results. In turn, the process determines yield impact of each POI utilizing process yield data and monitors a frequency of occurrence of each of the POIs and the criticality of the POIs in order to identify process excursions of the device. Finally, the process determines a device risk level by calculating a normalized polygon frequency for the device utilizing a frequency of occurrence for each of the critical polygons and a criticality for each of the critical polygons.

    Method and apparatus for inspection of scattered hot spot areas on a manufactured substrate

    公开(公告)号:US10217605B2

    公开(公告)日:2019-02-26

    申请号:US15061372

    申请日:2016-03-04

    摘要: One embodiment relates to a method of automated inspection of scattered hot spot areas on a manufactured substrate using an electron beam apparatus. A stage holding the substrate is moved along a swath path so as to move a field of view of the electron beam apparatus such that the moving field of view covers a target area on the substrate. Off-axis imaging of the hot spot areas within the moving field of view is performed. A number of hot spot areas within the moving field of view may be determined, and the speed of the stage movement may be adjusted based on the number of hot spot areas within the moving field of view. Another embodiment relates to an electron beam apparatus for inspecting scattered areas on a manufactured substrate. Other embodiments, aspects and features are also disclosed.

    Optical metrology tool equipped with modulated illumination sources

    公开(公告)号:US10215688B2

    公开(公告)日:2019-02-26

    申请号:US15217549

    申请日:2016-07-22

    摘要: The system includes a modulatable illumination source configured to illuminate a surface of a sample disposed on a sample stage, a detector configured to detect illumination emanating from a surface of the sample, illumination optics configured to direct illumination from the modulatable illumination source to the surface of the sample, collection optics configured to direct illumination from the surface of the sample to the detector, and a modulation control system communicatively coupled to the modulatable illumination source, wherein the modulation control system is configured to modulate a drive current of the modulatable illumination source at a selected modulation frequency suitable for generating illumination having a selected coherence feature length. In addition, the present invention includes the time-sequential interleaving of outputs of multiple light sources to generate periodic pulse trains for use in multi-wavelength time-sequential optical metrology.

    Metrology of multiple patterning processes

    公开(公告)号:US10215559B2

    公开(公告)日:2019-02-26

    申请号:US14879534

    申请日:2015-10-09

    摘要: Methods and systems for evaluating the performance of multiple patterning processes are presented. Patterned structures are measured and one or more parameter values characterizing geometric errors induced by the multiple patterning process are determined. In some examples, a primary, multiple patterned target is measured and a value of a parameter of interest is directly determined from the measured data by a Signal Response Metrology (SRM) measurement model. In some other examples, a primary, multiple patterned target and an assist target are measured and a value of a parameter of interest is directly determined from the measured data by a Signal Response Metrology (SRM) measurement model. In some other examples, a primary, multiple patterned target is measured at different process steps and a value of a parameter of interest is directly determined from the measured data by a Signal Response Metrology (SRM) measurement model.

    Signal response metrology for image based and scatterometry overlay measurements

    公开(公告)号:US10210606B2

    公开(公告)日:2019-02-19

    申请号:US14880077

    申请日:2015-10-09

    摘要: Methods and systems for measuring overlay error between structures formed on a substrate by successive lithographic processes are presented herein. Two overlay targets, each having programmed offsets in opposite directions are employed to perform an overlay measurement. Overlay error is measured based on zero order scatterometry signals and scatterometry data is collected from each target at two different azimuth angles. In addition, methods and systems for creating an image-based measurement model based on measured, image-based training data are presented. The trained, image-based measurement model is then used to calculate values of one or more parameters of interest directly from measured image data collected from other wafers. The methods and systems for image based measurement described herein are applicable to both metrology and inspection applications.

    Sensor with electrically controllable aperture for inspection and metrology systems

    公开(公告)号:US10194108B2

    公开(公告)日:2019-01-29

    申请号:US15806913

    申请日:2017-11-08

    摘要: Pixel aperture size adjustment in a linear sensor is achieved by applying more negative control voltages to central regions of the pixel's resistive control gate, and applying more positive control voltages to the gate's end portions. These control voltages cause the resistive control gate to generate an electric field that drives photoelectrons generated in a selected portion of the pixel's light sensitive region into a charge accumulation region for subsequent measurement, and drives photoelectrons generated in other portions of the pixel's light sensitive region away from the charge accumulation region for subsequent discard or simultaneous readout. A system utilizes optics to direct light received at different angles or locations from a sample into corresponding different portions of each pixel's light sensitive region. Multiple aperture control electrodes are selectively actuated to collect/measure light received from either narrow or wide ranges of angles or locations, thereby enabling rapid image data adjustment.