公开(公告)号：US12249484B2

公开(公告)日：2025-03-11

申请号：US17554645

申请日：2021-12-17

Applicant: Applied Materials, Inc.

Inventor： Jian Janson Chen ,  Yi Yang ,  Chong Ma ,  Yuan Xue

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/505

Abstract: Methods and apparatus for controlling plasma in a process chamber leverage an RF termination filter which provides an RF path to ground. In some embodiments, an apparatus may include a DC filter configured to be electrically connected between a DC power supply and electrodes embedded in an electrostatic chuck where the DC filter is configured to block DC current from the DC power supply from flowing through the DC filter and an RF termination filter configured to be electrically connected between the DC filter and an RF ground of the process chamber where the RF termination filter is configured to adjust an impedance of the electrodes relative to the RF ground.

公开(公告)号：US20250081583A1

公开(公告)日：2025-03-06

申请号：US18950957

申请日：2024-11-18

Applicant: Applied Materials, Inc.

Inventor： Qintao Zhang ,  Samphy Hong

IPC: H01L29/423 ,  H01L29/16 ,  H01L29/40

Abstract: Devices and methods may include providing a device structure having a shielding layer formed beneath each trench in a MOSFET to protect trench corner breakdown. The method may include providing a device structure comprising an epitaxial layer, a well over the epitaxial layer, and a source layer over the well, and providing a plurality of trenches through the device structure. The method may further include forming a shielding layer in the device structure by directing ions into the plurality of trenches.

公开(公告)号：US20250079356A1

公开(公告)日：2025-03-06

申请号：US18460174

申请日：2023-09-01

Applicant: Applied Materials, Inc.

Inventor： Tyler Sherwood ,  Raghav Sreenivasan

IPC: H01L23/00 ,  H01L21/02 ,  H01L21/67

Abstract: A structure for semiconductor devices having a high-dielectric constant dielectric film on the top surface can be used to form devices that are composed of hybrid bonded structures with reduced dielectric surface area and reduced pitch for metal studs. The dielectric constant of the dielectric film can be about or greater than 8. A device can be formed by hybrid bonding the dielectric film of the structure to a dielectric film of a similar structure. A technique for forming the structure can include selectively depositing the dielectric film via atomic layer deposition after features filled with metal in a top layer of oxide in an oxide-metal-substrate stack. In order to selectively deposit the dielectric film, the metal may be covered with a polymer which can be burned off. A chemical-mechanical polishing technique can be used to precisely form the surface of the structure in preparation for hybrid bonding.

公开(公告)号：US20250079342A1

公开(公告)日：2025-03-06

申请号：US18239676

申请日：2023-08-29

Applicant: Applied Materials, Inc.

Inventor： Shailesh Mishra ,  Meghna Maheshkumar Patel

IPC: H01L23/00 ,  G06F21/60 ,  G06F21/72 ,  G06F21/73 ,  H01L25/065

Abstract: A chiplet-based system may include a first chiplet mounted to an interposer that is designated as being from one or more trusted sources, a second chiplet mounted to the interposer that is designated as not being from the one or more trusted sources, and an artificial intelligence (AI) accelerator. The AI accelerator may be programmed to monitor a state of the first chiplet, where the state may indicate an anomaly associated with the second chiplet. The AI accelerator may then select an action from a plurality of actions based at least in part on the state of the first chiplet, cause the action to be performed by the chiplet-based system, and execute a reinforcement learning algorithm update the plurality of actions based on a result of the action being performed.

公开(公告)号：US20250079239A1

公开(公告)日：2025-03-06

申请号：US18459524

申请日：2023-09-01

Applicant: Applied Materials, Inc.

Inventor： Jiang LU ,  Shumao ZHANG ,  Liqi WU ,  Yiyang WAN ,  Weifeng YE ,  Jianqiu GUO ,  Dong WANG ,  Qihao ZHU

IPC: H01L21/768 ,  H01L21/3205

Abstract: Embodiments of the disclosure include a method of forming a gate-all-around (GAA) contact structure on a semiconductor substrate. The method will include removing material from surfaces of a feature formed in a surface of a substrate that includes a plurality of features that each include a plurality of source/drain contact surfaces, selectively forming a reaction product material over a surface of each of the plurality of source/drain contact surfaces, heating the substrate to a first temperature to remove the reaction product material from the surface of each of the plurality of contacts, selectively forming a first metal layer on the surface of each of the plurality of contacts, selectively forming a second metal layer on the first metal layer, and filling the feature with a conductor material, wherein the conductor material comprises tungsten (W) or molybdenum (Mo).

公开(公告)号：US20250079186A1

公开(公告)日：2025-03-06

申请号：US18239414

申请日：2023-08-29

Applicant: Applied Materials, Inc.

Inventor： Yi ZHENG

IPC: H01L21/324 ,  H01L21/02 ,  H01L29/16

Abstract: A method for thermally processing an optically nonopaque substrate using radiant energy. In some embodiments, the method includes flipping the optically nonopaque substrate to expose a non-structure side, depositing an opaque thermal layer on the non-structure side of the optically nonopaque substrate where the opaque thermal layer has a uniform thickness, flipping the optically nonopaque substrate to expose the structure side, and thermally processing the optically nonopaque substrate in excess of approximately 900 degrees Celsius. In some embodiments, the opaque thermal layer is comprised of amorphous carbon, multiple layers of amorphous carbon with adjacent layers of the multiple layers having different optical properties, or alternating layers of different materials where a first layer of the alternating layers is comprised of amorphous carbon material and where a second layer of the alternating layers is comprised of amorphous silicon (Si)-based material.

公开(公告)号：US20250079124A1

公开(公告)日：2025-03-06

申请号：US18954202

申请日：2024-11-20

Applicant: Applied Materials, Inc.

Inventor： DAVID COUMOU

IPC: H01J37/32 ,  G01R19/00 ,  H03H7/40

Abstract: Embodiments disclosed herein include a processing tool. In an embodiment, the processing tool comprises a power supply, an impedance matching network coupled to the power supply, a cathode, wherein the power supply is configured to supply power through the impedance matching network to the cathode, and a processing module, wherein the processing module is communicatively coupled to the power supply and the impedance matching network.

公开(公告)号：US20250076767A1

公开(公告)日：2025-03-06

申请号：US18486726

申请日：2023-10-13

Applicant: Applied Materials, Inc.

Inventor： Ulrich Mueller ,  Thomas L. Laidig ,  Rudolf C. Brunner

IPC: G03F7/20

Abstract: A digital lithography system includes a stage configured to support a substrate, a bridge disposed above the stage, and a first lithographic processing unit coupled to the bridge. The first lithographic processing unit coupled to the bridge can include a scanning unit, a lithographic exposure unit, and an optical system shared by the scanning unit and the lithographic exposure unit. The scanning unit is to use the optical system to generate measurements of the substrate during a measurement operation, and the lithographic exposure unit is to use the optical system to perform digital lithographic exposure of the substrate using the optical system during an exposure operation.

公开(公告)号：US20250076216A1

公开(公告)日：2025-03-06

申请号：US18799653

申请日：2024-08-09

Applicant: Applied Materials, Inc.

Inventor： Venkatakaushik VOLETI ,  Yun-Ching CHANG ,  Dan XIE ,  Gregory KIRK ,  Mehdi VAEZ-IRAVANI

IPC: G01N21/95 ,  G01N21/47 ,  H01L21/66 ,  H01L23/00

Abstract: An optical inspection system for pre-bonding inspection includes a stage having a surface on which a sample to be inspected is placed, the surface of the sample having at least parts with a two dimensional (2D) periodic pattern which may include defects, an optical head including optics, a dark-field illuminator configured to illuminate the surface of the sample at an first angle, wherein the first angle is an oblique angle, a bright-field illuminator configured to illuminate the surface at a second angle, a dark-field collection path, a bright-field collection path, and a sensor configured to detect light transmitted from the dark-field illuminator, scattered at the surface of the sample, collected by the optical head, and relayed through the dark-field collection path, and light transmitted from the bright-field illuminator, reflected at the surface of the sample, and relayed through the bright-field collection path.

公开(公告)号：US20250075315A1

公开(公告)日：2025-03-06

申请号：US18243042

申请日：2023-09-06

Applicant: Applied Materials, Inc.

Inventor： Charith NANAYAKKARA ,  John HAUTALA

IPC: C23C16/04 ,  C23C16/26

Abstract: A method of modifying an opening in a mask to achieve desired critical dimensions, the method including performing a pre-implant on the mask to implant the mask with a dopant material, wherein a material of the mask is densified and the opening is enlarged, directing a first radical beam at a first lateral side of the opening to deposit a layer of material on the first lateral side, and directing a second radical beam at a second lateral side of the opening opposite the first lateral side to deposit a layer of material on the second lateral side.