Freeform distortion correction
    2.
    发明授权

    公开(公告)号:US10935892B2

    公开(公告)日:2021-03-02

    申请号:US15595497

    申请日:2017-05-15

    Abstract: Methods and systems are provided that, in some embodiments, print and process a layer. The layer can be on a wafer or on an application panel. Thereafter, locations of the features that were actually printed and processed are measured. Based upon differences between the measured differences and designed locations for those features at least one distortion model is created. Each distortion model is inverted to create a corresponding correction model. When there are multiple sections, a distortion model and a correction model can be created for each section. Multiple correction models can be combined to create a global correction model.

    Resolution enhanced digital lithography with anti-blazed DMD

    公开(公告)号:US10372042B2

    公开(公告)日:2019-08-06

    申请号:US15871302

    申请日:2018-01-15

    Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for processing one or more substrates, and more specifically to improved spatial light modulators for digital lithography systems and digital lithography methods using improved spatial light modulators. The spatial light modulator is configured such that there is a 180-degree phase shift between adjacent spatial light modulator pixels. The spatial light modulator is useful for pixel blending by forming a plurality of partially overlapping images, at least one of the plurality of partially overlapping images having at least two pixels formed by a first pair of adjacent spatial light modulator pixels having a 180-degree phase shift therebetween. The spatial light modulator results in improved resolution, depth of focus, and pixel blending.

    Apparatus and methods for on-the-fly digital exposure image data modification

    公开(公告)号:US09927723B2

    公开(公告)日:2018-03-27

    申请号:US15080473

    申请日:2016-03-24

    CPC classification number: G03F7/70775 G01B11/14 G03F7/70275 G03F7/70733

    Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for performing photolithography processes. In one embodiment, a system including multiple interferometers for accurately measuring the location of a substrate during operation is provided. The system may include two chucks, and the two chucks are aligned in a first direction. The interferometers are placed along the first direction to measure the location of the substrate with respect to the first direction. The reduced distance between the interferometers and the chuck improves the accuracy of the measurement of the location of the substrate. In another embodiment, mask pattern data is provided to the system, and the mask pattern data is modified based on location and position information of the substrate. By controlling the mask pattern data with the location and position information of the substrate, less positional errors of the pattern formed on the substrate can be achieved.

    Use of adaptive replacement maps in digital lithography for local cell replacement

    公开(公告)号:US12141517B2

    公开(公告)日:2024-11-12

    申请号:US18470717

    申请日:2023-09-20

    Abstract: Embodiments described herein relate to a system, software, and a method of using the system to edit a design to be printed by a lithography system. The system and methods utilize a server of a maskless lithography device. The server includes a memory. The memory includes a virtual mask file. The virtual mask file includes cells and the cells include sub-cells that form one or more polygons. The server further includes a controller coupled to the memory. The controller is configured to receive a replacement table. The replacement table includes instructions to replace the cells of the virtual mask file. The controller is further configured to replace the cells with replacement cells according to the replacement table to create an edited virtual mask file.

    Half tone scheme for maskless lithography

    公开(公告)号:US10571809B1

    公开(公告)日:2020-02-25

    申请号:US16279875

    申请日:2019-02-19

    Abstract: Embodiments described herein provide a system, a software application, and a method of a lithography process, to write full tone portions and grey tone portions in a single pass. One embodiment of the system includes a controller configured to provide mask pattern data to a lithography system. The controller is configured to divide a plurality of spatial light modulator pixels temporally by grey tone shots and full tone shots of a multiplicity of shots, and the controller is configured to vary a second intensity of a light beam generated by a light source and vary a first intensity of the light beam generated by the light source of each image projection system at the full tone shots.

    Line edge roughness reduction via step size alteration

    公开(公告)号:US10289003B2

    公开(公告)日:2019-05-14

    申请号:US15253379

    申请日:2016-08-31

    Abstract: An image correction application relating to the ability to apply maskless lithography patterns to a substrate in a manufacturing process is disclosed. The embodiments described herein relate to a software application platform, which corrects non-uniform image patterns on a substrate. The application platform method includes in a digital micromirror device (DMD) installed in an image projection system, the DMD having a plurality of columns, each column having a plurality of mirrors, disabling at least one entire column of the plurality of columns, exposing a first portion of the substrate to a first shot of electromagnetic radiation, exposing a second portion of the substrate to a second shot of electromagnetic radiation, and iteratively translating the substrate a step size and exposing another portion of the substrate to another shot of electromagnetic radiation until the substrate has been completely exposed to shots of electromagnetic radiation.

    Active eye-to-eye with alignment by X-Y capacitance measurement

    公开(公告)号:US10114297B2

    公开(公告)日:2018-10-30

    申请号:US15629183

    申请日:2017-06-21

    Abstract: Embodiments of the present disclosure generally relate to systems and methods for performing photolithography processes. In one embodiment, a photolithography system includes a plurality of image projection systems each having an extendable lens, and a plate having a plurality of openings. Each extendable lens is configured to be extended through a corresponding opening of the plurality of openings during operation. The plate includes one or more elements disposed adjacent each opening and each lens includes one or more elements formed thereon. The one or more elements formed on the plate and the one or more elements formed on the lens are utilized to measure one or more distances between the lens and the plate. Any deviation of the measured distance from a reference distance indicates that the lens has been shifted. Measures to compensate for the shifting of the lens will be performed.

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