公开(公告)号：US08799779B2

公开(公告)日：2014-08-05

申请号：US13042696

申请日：2011-03-08

申请人： Se Hwan Park ,  Sung Wook Park ,  Hyung Jun Kim ,  Ji Hoon Lee

发明人： Se Hwan Park ,  Sung Wook Park ,  Hyung Jun Kim ,  Ji Hoon Lee

IPC分类号： G06F3/00 ,  G06F3/048 ,  G06F9/44 ,  G06F3/0481

CPC分类号： G06F9/454 ,  G06F3/018 ,  G06F3/0235 ,  G06F3/0237 ,  G06F3/0481

摘要： A text input method in a portable device and a portable device supporting the same are provided. The portable device includes, a touch screen including a display unit for displaying a text input area and a text display area including at least one consonant and vowel, and a touch panel provided at an upper side of the display unit for generating a touch event, and a control unit for controlling text displayed according to a touch event generated from the touch screen, in which the control unit detects multi-touch events for at least two key icons output on the text input area, and controls the display of a specific text composed of a combination of the multi-touched key icons based on the detected multi-touch events.

摘要翻译： 提供了便携式设备中的文本输入方法和支持它的便携式设备。 便携式设备包括：触摸屏，其包括用于显示文本输入区域的显示单元和包括至少一个辅音和元音的文本显示区域;以及设置在所述显示单元的上侧以产生触摸事件的触摸面板， 以及控制单元，用于控制根据从触摸屏产生的触摸事件显示的文本，其中控制单元检测在文本输入区域上输出的至少两个键图标的多点触摸事件，并且控制特定文本的显示 由基于检测到的多点触摸事件的多点触摸的键图标的组合构成。

公开(公告)号：US20130165609A1

公开(公告)日：2013-06-27

申请号：US13545608

申请日：2012-07-10

申请人： Hyung Jun KIM ,  Myung-Sup JUNG ,  Won Cheol JUNG ,  Jong-Hoon WON ,  Kyu Yeol IN

发明人： Hyung Jun KIM ,  Myung-Sup JUNG ,  Won Cheol JUNG ,  Jong-Hoon WON ,  Kyu Yeol IN

IPC分类号： C08F26/06

CPC分类号： C08F26/06

摘要： A polymer for an optical film including: a repeating unit A including a repeating unit represented by the following Chemical Formula 1; and a repeating unit B derived from a monomer including an unsaturated bond copolymerizable with the repeating unit A: wherein, in Chemical Formula 1, the variables R1 to R9 are defined herein.

摘要翻译： 一种用于光学膜的聚合物，包括：包含由以下化学式1表示的重复单元的重复单元A; 和衍生自包含可与重复单元A共聚的不饱和键的单体的重复单元B.其中，在化学式1中，本文定义了变量R1至R9。

公开(公告)号：US20130133278A1

公开(公告)日：2013-05-30

申请号：US13615633

申请日：2012-09-14

申请人： HYUNG-JUN KIM ,  HEUNG-YOUL KIM ,  IN-HWAN YEO ,  CHAN-SOL AHN

发明人： HYUNG-JUN KIM ,  HEUNG-YOUL KIM ,  IN-HWAN YEO ,  CHAN-SOL AHN

IPC分类号： E04C3/34 ,  E04G21/00

CPC分类号： E04C3/34 ,  Y10T29/49631

摘要： A non-welding type concrete-filled steel tube column utilizing a slot, in which an external steel tube is bended and retracted to allow a jointing portion thereof to be formed as a T-shaped bending part is provided. A slot is inserted into the T-shaped bending part in a sliding manner to construct in a non-welding manner, and a multi-perforated penetrating part can be formed on the external steel tube to secure fire resistance capacity thereof. A method of fabricating the same is also provided.

摘要翻译： 提供一种利用槽的非焊接型混凝土填充钢管柱，其中外部钢管弯曲并缩回以允许其接合部分形成为T形弯曲部分。 以滑动方式将滑槽插入到T形弯曲部分中，以非焊接方式构造，并且可以在外部钢管上形成多孔穿透部分以确保其耐火能力。 还提供了一种制造该方法的方法。

公开(公告)号：US08450742B2

公开(公告)日：2013-05-28

申请号：US13026403

申请日：2011-02-14

申请人： Sung-Haeng Cho ,  Ki-Hun Jeong ,  Jun-Ho Song ,  Joo-Han Kim ,  Hyung-Jun Kim ,  Seung-Hwan Shim

发明人： Sung-Haeng Cho ,  Ki-Hun Jeong ,  Jun-Ho Song ,  Joo-Han Kim ,  Hyung-Jun Kim ,  Seung-Hwan Shim

IPC分类号： H01L29/786

CPC分类号： H01L29/66765 ,  G02F1/13454 ,  H01L27/1229 ,  H01L27/1288 ,  H01L29/04 ,  H01L29/78696

摘要： A thin film transistor, a display device, and a manufacturing method thereof. The thin film transistor includes a control electrode, a semiconductor overlapping the control electrode, and an input electrode and an output electrode disposed on or under the semiconductor and opposite to each other. The semiconductor includes a first portion disposed between the input electrode and the output electrode and having a first crystallinity, and a second portion connected with the first portion, which overlaps the input electrode or the output electrode, and having a second crystallinity. The first crystallinity is higher than the second crystallinity.

公开(公告)号：US08434935B2

公开(公告)日：2013-05-07

申请号：US12941255

申请日：2010-11-08

申请人： Heung Youl Kim ,  Bong Jae Lee ,  Hyung Jun Kim

发明人： Heung Youl Kim ,  Bong Jae Lee ,  Hyung Jun Kim

IPC分类号： G01N25/00 ,  G01K17/00 ,  G01K3/00

CPC分类号： G01N3/60 ,  G01M99/002 ,  G01N3/08 ,  G01N2203/0226 ,  G01N2203/0264 ,  G01N2203/0282 ,  G01N2203/0694

摘要： A heating furnace for testing middle and long span structures including a modular partition structure to adjust an inner volume of the heating furnace, effectively performing a load-coupled heating test of full scale members such as a beam, a short column, a slab, a conjunction frame, and a deck plate. The heating furnace for testing middle and long span structures includes a partition unit formed of a refractory material and partitioning a heating space in a main body to block transfer of heat generated from one space to the other space. A test sample is installed in the heating space of the main body partitioned by the partition unit according to a size of the test sample, and then, heat and a compression force are applied to the test sample to perform a fireproof performance test. The fireproof performance test of structure members having various lengths of 4 m, 6 m and 10 m can be performed, and consumption of various utilities consumed during the test can be optimized. In addition, since the heating furnace can perform an actual material test of full scale structures such as continuous span beams and long span beams, deck plates, or bridge trusses of civil structures, deck plates for ships, and so on, target fireproof performance estimation of various shape conditions can be performed to increase applicability of the test.

摘要翻译： 一种用于测试中长跨距结构的加热炉，包括用于调节加热炉的内部容积的模块化分隔结构，有效地执行诸如梁，短塔，板坯，等等的全尺寸构件的负载耦合加热试验 连接框架和甲板。 用于测试中间和长跨度结构的加热炉包括由耐火材料形成并且分隔主体中的加热空间的分隔单元，以阻挡从一个空间产生的热量传递到另一个空间。 将测试样品安装在根据测试样本的尺寸由分隔单元分隔的主体的加热空间中，然后对测试样品施加热和压缩力以进行耐火性能测试。 可以进行各种长度为4m，6m和10μm的结构件的耐火性能测试，并且可以优化在测试期间消耗的各种实用程序的消耗。 另外，由于加热炉可以进行全尺寸结构的实际材料试验，例如连续跨梁和长跨梁，甲板或者民用结构的桥梁桁架，船舶甲板等，目标防火性能估计 可以执行各种形状条件以增加测试的适用性。

公开(公告)号：US08278661B2

公开(公告)日：2012-10-02

申请号：US12206327

申请日：2008-09-08

申请人： Jun-Ho Song ,  Joo-Han Kim ,  Hyung-Jun Kim ,  Sung-Haeng Cho ,  Ki-Hun Jeong ,  Seung-Hwan Shim

发明人： Jun-Ho Song ,  Joo-Han Kim ,  Hyung-Jun Kim ,  Sung-Haeng Cho ,  Ki-Hun Jeong ,  Seung-Hwan Shim

IPC分类号： G06F3/038

CPC分类号： H01L29/78669 ,  G09G3/3233 ,  G09G2300/0439 ,  G09G2300/0842 ,  H01L27/1229 ,  H01L27/1251 ,  H01L27/1288 ,  H01L27/3262 ,  H01L29/66765 ,  H01L29/78678 ,  H01L29/78696

摘要： A display device and a manufacturing method thereof, include a first thin film transistor including a first control electrode, a first semiconductor disposed on the first control electrode, and a first input electrode and a first output electrode opposite to each other on the first semiconductor; and a second thin film transistor including a second control electrode, a second semiconductor disposed on the second control electrode, and a second input electrode and a second output electrode opposite to each other on the second semiconductor, wherein the first semiconductor includes a first lower semiconductor including polysilicon, and a first upper semiconductor disposed on the first lower semiconductor, the first upper semiconductor including amorphous silicon.

摘要翻译： 显示装置及其制造方法包括第一薄膜晶体管，其包括第一控制电极，设置在第一控制电极上的第一半导体，以及在第一半导体上彼此相对的第一输入电极和第一输出电极; 以及第二薄膜晶体管，其包括第二控制电极，设置在第二控制电极上的第二半导体，以及在第二半导体上彼此相对的第二输入电极和第二输出电极，其中第一半导体包括第一下半导体 包括多晶硅，以及设置在所述第一下半导体上的第一上半导体，所述第一上半导体包括非晶硅。

公开(公告)号：US20120052638A1

公开(公告)日：2012-03-01

申请号：US13191833

申请日：2011-07-27

申请人： Hyung-Jun KIM ,  Chang-Oh JEONG ,  Il-Yong YOON

发明人： Hyung-Jun KIM ,  Chang-Oh JEONG ,  Il-Yong YOON

IPC分类号： H01L21/336

CPC分类号： H01L21/268 ,  H01L21/02675 ,  H01L21/02678 ,  H01L27/1229 ,  H01L27/1274 ,  H01L29/66765 ,  H01L29/78696

摘要： A method of fabricating a thin-film transistor (TFT) substrate includes forming a gate electrode on a substrate; forming an insulating film on the gate electrode; forming an amorphous semiconductor pattern on the insulating film; and forming a source electrode separated from a drain electrode on the amorphous semiconductor pattern; forming a light-concentrating layer, which includes a protrusion, on the amorphous semiconductor pattern, the source electrode, and the drain electrode; and crystallizing at least part of the amorphous semiconductor pattern by irradiating light to the protrusion of the light-concentrating layer.

摘要翻译： 制造薄膜晶体管（TFT）基板的方法包括在基板上形成栅电极; 在栅电极上形成绝缘膜; 在所述绝缘膜上形成非晶半导体图案; 以及形成与所述非晶半导体图案上的漏电极分离的源电极; 在所述非晶半导体图案，所述源电极和所述漏电极上形成包括突起的聚光层; 以及通过向所述聚光层的所述突起照射光而使所述非晶半导体图案的至少一部分结晶。

公开(公告)号：US08053851B2

公开(公告)日：2011-11-08

申请号：US12233488

申请日：2008-09-18

申请人： Hyun Cheol Koo ,  Suk Hee Han ,  Joon Yeon Chang ,  Hyung Jun Kim ,  Kyung Ho Kim

发明人： Hyun Cheol Koo ,  Suk Hee Han ,  Joon Yeon Chang ,  Hyung Jun Kim ,  Kyung Ho Kim

IPC分类号： H01L29/82 ,  H01L21/00

CPC分类号： H01L29/205 ,  B82Y10/00 ,  H01L29/122 ,  H01L29/66984 ,  Y10S977/933

摘要： A spin transistor conducive to the miniaturization and large scale integration of devices, because a magnetization direction of a source and a drain is determined by a direction of the epitaxial growth of a ferromagnet. The spin transistor includes a semiconductor substrate having a channel layer formed thereinside; ferromagnetic source and drain epitaxially grown on the semiconductor substrate and magnetized in a longitudinal direction of the channel layer due to magnetocrystalline anisotropy—the source and drain being disposed spaced apart from each other in a channel direction and magnetized in the same direction—; and a gate disposed between the source and the drain to be insulated with the semiconductor substrate and formed on the semiconductor substrate to control the spin of electrons that are passed through the channel layer.

摘要翻译： 有助于器件的小型化和大规模集成的自旋晶体管，因为源极和漏极的磁化方向由铁磁体的外延生长的方向决定。 自旋晶体管包括其内部形成有沟道层的半导体衬底; 外延生长在半导体衬底上的铁磁源极和漏极，并且由于磁晶各向异性而在沟道层的纵向上被磁化 - 源极和漏极沿沟道方向彼此间隔开并沿相同方向被磁化; 以及设置在源极和漏极之间的栅极，与半导体衬底绝缘并形成在半导体衬底上，以控制通过沟道层的电子的自旋。

公开(公告)号：US08003450B2

公开(公告)日：2011-08-23

申请号：US12318244

申请日：2008-12-23

申请人： Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo ,  Hyung-Jun Kim ,  Seong-Joon Lim

发明人： Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo ,  Hyung-Jun Kim ,  Seong-Joon Lim

IPC分类号： H01L21/00

CPC分类号： H01L29/7869 ,  H01L27/1225

摘要： A thin film transistor (TFT) includes a substrate, a transparent semiconductor layer on the substrate, the transparent semiconductor layer including zinc oxide and exhibiting a charge concentration of about 1×1014 atom/cm3 to about 1×1017 atom/cm3, a gate electrode on the substrate, a gate insulating layer between the gate electrode and the transparent semiconductor layer, the gate insulting layer insulating the gate electrode from the transparent semiconductor layer, and source and drain electrodes on the substrate, the source and drain electrodes being in contact with the transparent semiconductor layer.

摘要翻译： 薄膜晶体管（TFT）包括基板，在基板上的透明半导体层，包含氧化锌的透明半导体层，其电荷浓度为约1×1014原子/ cm3至约1×1017原子/ cm3，栅极 电极，栅电极和透明半导体层之间的栅极绝缘层，栅极绝缘层与透明半导体层绝缘，源极和漏极在基板上，源电极和漏电极接触 与透明半导体层。

公开(公告)号：US20110181557A1

公开(公告)日：2011-07-28

申请号：US12900846

申请日：2010-10-08

申请人： HYUNG-JUN KIM ,  Sung-Haeng Cho ,  Yong-Mo Choi

发明人： HYUNG-JUN KIM ,  Sung-Haeng Cho ,  Yong-Mo Choi

IPC分类号： G06F3/038 ,  H01L33/16 ,  H01L33/60

CPC分类号： G11C19/28 ,  G02F1/1362 ,  G02F2202/104 ,  G11C19/184

摘要： A display substrate includes a base substrate, a first insulating layer formed on a base substrate, a pixel including a pixel electrode having the first insulating layer, and a circuit including a circuit transistor disposed on a peripheral area to drive the pixel. The pixel includes a first channel formed on the base substrate having the first insulating layer formed thereon. The first channel includes a poly-silicon layer, a first source electrode and a first drain electrode formed on the first channel that are spaced apart from each other, and a first gate electrode formed on the first source electrode and the first drain electrode corresponding to the first channel which is formed of the transparent conductive material. The poly-silicon layer is formed at a front channel portion of the first channel proximal to the first gate electrode through the first gate electrode.

摘要翻译： 显示基板包括基底基板，形成在基底基板上的第一绝缘层，包括具有第一绝缘层的像素电极的像素，以及包括设置在外围区域上以驱动像素的电路晶体管的电路。 像素包括形成在其上形成有第一绝缘层的基底基板上的第一通道。 第一通道包括形成在第一通道上彼此间隔开的多晶硅层，第一源电极和第一漏极，以及形成在第一源电极和第一漏电极上的第一栅电极， 由透明导电材料形成的第一通道。 多晶硅层通过第一栅电极形成在靠近第一栅电极的第一通道的前通道部分处。