公开(公告)号：US20080229773A1

公开(公告)日：2008-09-25

申请号：US11902645

申请日：2007-09-24

Applicant: Jeong-Wook Lee ,  Sang-Chul Ryu

Inventor： Jeong-Wook Lee ,  Sang-Chul Ryu

IPC: F25D23/02

CPC classification number: F25D23/026 ,  E05Y2900/31 ,  F25D17/04 ,  F25D29/00 ,  F25D2323/024 ,  F25D2400/06 ,  F25D2700/02

Abstract: A refrigerator includes: a cabinet which comprises at least one storage compartment formed with an opening at one side thereof; and a door unit which opens and closes the opening, the door unit comprising: a first door which is rotatably attached to the cabinet and opens and closes a partial area of the opening, a second door which is rotatably attached to the first door and opens and closes the remaining area of the opening, and a cool air blocking member which is disposed across a planar surface of one of the first door and the second door and a planar surface of the other of the first door and the second door and prevents cool air from leaking from a gap between the first door and the second door while the door unit is closed.

Abstract translation: 一种冰箱，包括：柜体，其包括在其一侧形成有开口的至少一个储藏室; 以及门单元，其打开和关闭所述开口，所述门单元包括：第一门，其可旋转地附接到所述柜并打开和关闭所述开口的部分区域;第二门，其可旋转地附接到所述第一门并打开 并且封闭开口的剩余区域，以及设置在第一门和第二门之一的平坦表面上的冷空气阻挡构件和第一门和第二门中的另一个的平坦表面，并防止冷却 当门单元关闭时，空气从第一门和第二门之间的间隙泄漏。

公开(公告)号：US20070187698A1

公开(公告)日：2007-08-16

申请号：US11525096

申请日：2006-09-22

Applicant: Jeong-wook Lee ,  Heon-su Jeon ,  Suk-ho Yoon ,  Joo-sung Kim

Inventor： Jeong-wook Lee ,  Heon-su Jeon ,  Suk-ho Yoon ,  Joo-sung Kim

IPC: H01L33/00

CPC classification number: H01L33/22 ,  H01L33/10 ,  H01L33/32 ,  H01L2933/0083

Abstract: A nitride-based semiconductor light emitting device having an improved structure in which light extraction efficiency is improved and a method of manufacturing the same are provided. The nitride-based semiconductor light emitting device comprises an n-clad layer, an active layer, and a p-clad layer, which are sequentially stacked on a substrate, wherein the n-clad layer comprises a first clad layer, a second clad layer, and a light extraction layer interposed between the first clad layer and the second clad layer and composed of an array of a plurality of nano-posts, the light extraction layer diffracting or/and scattering light generated in the active layer.

Abstract translation: 具有提高光提取效率的改进结构的氮化物系半导体发光器件及其制造方法。 氮化物系半导体发光元件包括依次层叠在基板上的n包覆层，有源层和p覆盖层，其中n包覆层包括第一覆盖层，第二覆盖层 以及插入在第一覆盖层和第二覆盖层之间并由多个纳米柱的阵列构成的光提取层，在有源层中产生的光提取层衍射或/和散射光。

公开(公告)号：US20050199892A1

公开(公告)日：2005-09-15

申请号：US11071223

申请日：2005-03-04

Applicant: Jae-hee Cho ,  Suk-ho Yoon ,  Jeong-wook Lee

Inventor： Jae-hee Cho ,  Suk-ho Yoon ,  Jeong-wook Lee

IPC: H01L27/15 ,  H01L29/18 ,  H01L29/22 ,  H01L29/26 ,  H01L31/12 ,  H01L33/06 ,  H01L33/32 ,  H01L33/50 ,  H01L33/00

CPC classification number: H01L33/08 ,  H01L33/06 ,  H01L33/325

Abstract: A monolithic white light emitting device is provided. An active layer in the monolithic white light emitting device is doped with silicon or rare earth metal that forms a sub-band. The number of active layers included in the monolithic white light emitting device is one or two. When two active layers are included in the monolithic white light emitting device, a cladding layer is interposed between the two active layers. According to this light emission structure, white light can be emitted by a semiconductor, so a phosphor is not necessary. The monolithic white light emitting device is easily manufactured at a low cost and applied to a wide range of fields compared with a conventional white light emitting device that needs a help of a phosphor.

Abstract translation: 提供了一种单片白光发光装置。 在单片白色发光器件中的有源层掺杂有形成子带的硅或稀土金属。 包含在单片白色发光器件中的有源层的数量是一个或两个。 当双层白色发光器件中包含两个有源层时，在两个有源层之间插入包层。 根据该发光结构，可以通过半导体发出白色的光，因此不需要荧光体。 与需要荧光体的帮助的传统的白色发光器件相比，单片白色发光器件以低成本容易地制造并应用于广泛的领域。

公开(公告)号：US20050133798A1

公开(公告)日：2005-06-23

申请号：US11017516

申请日：2004-12-20

Applicant: Hyun-Min Jung ,  Hae-Yong Lee ,  Hyun-Min Shin ,  Choon-Kon Kim ,  Chang-Ho Lee ,  Jeong-Wook Lee ,  Cheol-Soo Sone ,  Jae-Hee Cho

Inventor： Hyun-Min Jung ,  Hae-Yong Lee ,  Hyun-Min Shin ,  Choon-Kon Kim ,  Chang-Ho Lee ,  Jeong-Wook Lee ,  Cheol-Soo Sone ,  Jae-Hee Cho

IPC: C30B25/02 ,  C30B29/40 ,  H01L21/00 ,  H01L21/20 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/22 ,  H01L33/32 ,  H01L33/44 ,  H01L33/00

CPC classification number: H01L33/007 ,  C30B25/02 ,  C30B29/40 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658

Abstract: A nitride semiconductor template having nano-voids at an interface between a substrate having one embossed surface and a nitride semiconductor layer can be rapidly prepared by hydride vapor phase epitaxy (HVPE) growth of the nitride semiconductor layer on the embossed surface of the substrate.

Abstract translation: 可以通过在衬底的压花表面上的氮化物半导体层的氢化物气相外延（HVPE）生长来快速制备具有在具有一个压花表面的衬底与氮化物半导体层之间的界面处的纳米空隙的氮化物半导体模板。