公开(公告)号：US07723093B2

公开(公告)日：2010-05-25

申请号：US11823123

申请日：2007-06-26

Applicant: Suk-Tae Kwon ,  Mi-Sun Lee ,  Gun-A Kim ,  Jung-Hyun Lee

Inventor： Suk-Tae Kwon ,  Mi-Sun Lee ,  Gun-A Kim ,  Jung-Hyun Lee

IPC: C12N9/24 ,  C12N9/00 ,  C12N1/21 ,  C12Q1/68 ,  C12P21/06 ,  C12N15/70 ,  C12P19/34 ,  C07H21/04

CPC classification number: C12Y302/02027 ,  C12N9/2497 ,  C12Q1/6844 ,  C12Q2521/531

Abstract: The present invention provides uracil-DNA glycosylase (UDG) gene originating from Psychrobacter sp. HJ147, and amino acid sequences deduced from the gene; expression and purification of Psp HJ147 UDG gene in Escherichia coli; and characterization of UDG obtained therefrom, and the use thereof in a polymerase chain reaction (PCR). The UDG according to the present invention has a specific activity of excising uracil bases in a uracil-containing DNA substrates at a low temperature, and is easily heat-inactivated. It thus can effectively eliminate cross contamination and carry-over contamination of PCR templates often occurring after a PCR process using dUTP. Therefore, it is useful for increasing preciseness (elimination of false positives), purity and amplification efficiency of PCR.

Abstract translation: 本发明提供源自Psychrobacter sp。的尿嘧啶-DNA糖基化酶（UDG）基因。 HJ147和从该基因推导出的氨基酸序列; 在大肠杆菌中表达和纯化Psp HJ147 UDG基因; 和由其获得的UDG的表征，以及其在聚合酶链式反应（PCR）中的用途。 根据本发明的UDG在低温下具有在含尿嘧啶DNA基质中的尿嘧啶碱基的比活性，并且容易热灭活。 因此，可以有效地消除在使用dUTP的PCR过程之后经常发生的PCR模板的交叉污染和携带污染。 因此，提高PCR的精确度（消除假阳性），纯度和扩增效率是有用的。

公开(公告)号：US20100123710A1

公开(公告)日：2010-05-20

申请号：US12612259

申请日：2009-11-04

Applicant: Jung Hyun LEE

Inventor： Jung Hyun LEE

IPC: G09G5/00 ,  G09G3/36

CPC classification number: G09G3/2092 ,  G09G3/3611 ,  G09G2300/0426

Abstract: An LCD device having improved reliability is disclosed.The LCD device includes an LCD panel comprising a plurality of gate lines and a plurality of data lines crossing the plurality of gate lines, a bottom cover disposed under the LCD panel, a top case encompassing an edge portion of an upper surface of the LCD panel and coupled to the bottom cover, a control PCB disposed on a lower surface of the bottom cover, a data driving PCB disposed at a side of the LCD panel and supplying a data signal to the plurality of data lines, a plurality of chip-on-films (COFs) connected the data driving PCB and the LCD panel, a plurality of flexible flat cables (FFCs) connected the data driving PCB and the control PCB, and a protection tape in which an adhesive material is coated on a surface other than areas corresponding to the FFCs and a plurality of grooves corresponding to the FFCs are formed at a side of the protection tape.

Abstract translation: 公开了一种具有改善的可靠性的LCD装置。 LCD装置包括一个LCD面板，包括多条栅极线和与多条栅极线交叉的多条数据线，一个位于LCD面板下方的底盖，一个包围LCD面板上表面边缘部分的顶盖 并且耦合到所述底盖，设置在所述底盖的下表面上的控制PCB，设置在所述LCD面侧的数据驱动PCB，并将数据信号提供给所述多条数据线，多个芯片接通 连接数据驱动PCB和LCD面板的多个柔性扁平电缆（FFC）和连接数据驱动PCB和控制PCB的柔性扁平电缆（FFC），以及保护带，其中粘合剂材料涂覆在除了 对应于FFC的区域和与FFC相对应的多个凹槽形成在保护带的一侧。

公开(公告)号：US20100112413A1

公开(公告)日：2010-05-06

申请号：US12341703

申请日：2008-12-22

Applicant: Do Hyung KIM ,  Beom Joo KIM ,  Jung Hyun LEE ,  Seung Won KANG ,  Hee Chun LIM ,  Byung Soo JUNG

Inventor： Do Hyung KIM ,  Beom Joo KIM ,  Jung Hyun LEE ,  Seung Won KANG ,  Hee Chun LIM ,  Byung Soo JUNG

IPC: H01M2/14

CPC classification number: H01M8/0247 ,  H01M8/0254 ,  H01M8/2425 ,  H01M8/244 ,  H01M8/2483

Abstract: Provided is a high-temperature fuel cell separator. The fuel cell separator includes a fuel gas flow path containing hydrogen, an oxidant gas flow path containing mainly an oxygen component being supplied from an oxygen/nitrogen separator of a system and participating in electrochemical reactions, and a cooling gas flow path containing a nitrogen component to remove heat produced upon power generation of a fuel cell. Such a configuration provides a high-temperature fuel cell separator which is capable of improving efficiency of an overall fuel cell system through improved performance of a fuel cell stack due to increased oxygen partial pressure and which is also capable of improving reliability of the fuel cell stack through inhibition of the occurrence of a high-temperature region resulting from heat produced upon power generation of a fuel cell, by means of a flow of cooling gas containing a nitrogen component.

Abstract translation: 提供了一种高温燃料电池隔板。 燃料电池分离器包括含有氢的燃料气体流路，主要由系统的氧/氮分离器供给的氧成分的氧化剂气体流路，并参与电化学反应，以及含有氮成分的冷却气体流路 以消除燃料电池发电时产生的热量。 这种构造提供了一种高温燃料电池隔板，其能够通过由于氧分压增加而改善燃料电池堆的性能来提高总体燃料电池系统的效率，并且还能够提高燃料电池堆的可靠性 通过抑制由燃料电池发电产生的热量，通过含有氮成分的冷却气体的流动而发生高温区域。

公开(公告)号：US07709377B2

公开(公告)日：2010-05-04

申请号：US11176657

申请日：2005-07-08

Applicant: Jung-hyun Lee ,  Dae-sig Kim ,  Yo-sep Min ,  Young-jin Cho

Inventor： Jung-hyun Lee ,  Dae-sig Kim ,  Yo-sep Min ,  Young-jin Cho

IPC: H01L21/469 ,  H01L21/4763

CPC classification number: C23C16/409 ,  C23C16/308 ,  C23C16/34 ,  C23C16/40 ,  C23C16/45531 ,  C23C16/45542

Abstract: A thin film including multi components and a method of forming the thin film are provided, wherein a method according to an embodiment of the present invention, a substrate is loaded into a reaction chamber. A unit material layer is formed on the substrate. The unit material layer may be formed of a mosaic atomic layer composed of two kinds of precursors containing components constituting the thin film. The inside of the reaction chamber is purged, and the MAL is chemically changed. The method of forming the thin film of the present invention requires fewer steps than a conventional method while retaining the advantages of the conventional method, thereby allowing a superior thin film yield in the present invention than previously obtainable.

Abstract translation: 提供了包括多组分的薄膜和形成薄膜的方法，其中根据本发明的实施方案的方法将基底装载到反应室中。 在基板上形成单位材料层。 单元材料层可以由包含构成薄膜的成分的两种前体构成的马赛克原子层形成。 反应室的内部被清除，并且MAL被化学地改变。 与传统方法相比，形成本发明的薄膜的方法需要更少的步骤，同时保持了常规方法的优点，从而使本发明的薄膜产率优于先前可获得的。

公开(公告)号：US20090148896A1

公开(公告)日：2009-06-11

申请号：US12089587

申请日：2006-10-02

Applicant: Jung Hyun Lee ,  Suk Tae Kwon ,  Sung Gyun Kang ,  Sang Jin Kim ,  Jung Ho Hyun ,  Kae Kyoung Kwon ,  Yun Jae Kim ,  Hyun Sook Lee ,  Seung Seob Bae ,  Ki Hoon Nam ,  Jae Kyu Lim ,  Jung Ho Jeon ,  Sung Hyun Yang

Inventor： Jung Hyun Lee ,  Suk Tae Kwon ,  Sung Gyun Kang ,  Sang Jin Kim ,  Jung Ho Hyun ,  Kae Kyoung Kwon ,  Yun Jae Kim ,  Hyun Sook Lee ,  Seung Seob Bae ,  Ki Hoon Nam ,  Jae Kyu Lim ,  Jung Ho Jeon ,  Sung Hyun Yang

IPC: C12P21/02 ,  C12N9/00 ,  C12N15/11 ,  C12N1/21 ,  C12N15/00

CPC classification number: C12N9/1252

Abstract: The present invention relates to a hyperthermophilic DNA polymerase and a preparation method thereof. The invention provides a novel hyperthermophilic DNA polymerase isolated from a Thermococcus sp. strain, a functional equivalent thereof, a protein having the amino acid sequence thereof, and a preparation method thereof. The DNA polymerase according to the invention is a DNA polymerase, which is hyperthermophilic and has an elongation ability and fidelity higher than those of prior commercial DNA polymerases. Thus, the DNA polymerase according to the invention will be useful in precision analysis, precision diagnosis, identification and the like, which require accurate PCR.

Abstract translation: 本发明涉及一种超嗜热DNA聚合酶及其制备方法。 本发明提供了从Thermococcus sp。分离的新型超嗜热DNA聚合酶。 菌株，其功能等同物，具有其氨基酸序列的蛋白质及其制备方法。 根据本发明的DNA聚合酶是DNA聚合酶，其是超嗜热的，并且具有比以前的商业DNA聚合酶更高的伸长能力和保真度。 因此，根据本发明的DNA聚合酶可用于需要精确PCR的精密分析，精确诊断，鉴定等中。

公开(公告)号：US07518007B2

公开(公告)日：2009-04-14

申请号：US11253693

申请日：2005-10-20

Applicant: Bum-seok Seo ,  Jung-hyun Lee

Inventor： Bum-seok Seo ,  Jung-hyun Lee

IPC: C07F7/08 ,  C07F7/00 ,  C23C16/00

CPC classification number: H01L27/2436 ,  C07F7/10 ,  C07F7/30 ,  C23C16/305 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1616

Abstract: Provided are a Ge precursor for low temperature deposition containing Ge, N, and Si, a GST thin layer doped with N and Si formed using the same, a memory device including the GST thin layer doped with N and Si, and a method of manufacturing the GST thin layer. The Ge precursor for low temperature deposition contains N and Si such that the temperature at which the Ge precursor is deposited to form a thin layer, particularly, the GST thin layer doped with N and Si, can be low. In addition, during the low temperature deposition, H2 plasma can be used. The GST phase-change layer doped with N and Si formed from the Ge precursor for low temperature deposition has a low reset current. Therefore, a memory device including the GST phase-change layer doped with N and Si can be highly integrated, have a high capacity, and can be operated at a high speed.

Abstract translation: 提供了包含Ge，N和Si的低温沉积的Ge前体，掺杂有使用其形成的N和Si的GST薄层，包括掺杂有N和Si的GST薄层的存储器件，以及制造方法 GST薄层。 用于低温沉积的Ge前体包含N和Si，使得Ge前体沉积形成薄层的温度，特别是掺杂有N和Si的GST薄层的温度可以低。 此外，在低温沉积期间，可以使用H 2等离子体。 掺杂有由Ge前体形成的用于低温沉积的N和Si的GST相变层具有低复位电流。 因此，包含掺杂有N和Si的GST相变层的存储器件可以高度集成，具有高容量，并且可以高速运行。

公开(公告)号：US07491347B2

公开(公告)日：2009-02-17

申请号：US11282486

申请日：2005-11-21

Applicant: Sung-ho Park ,  Jung-hyun Lee

Inventor： Sung-ho Park ,  Jung-hyun Lee

IPC: H01B1/06 ,  H01B1/02 ,  C22C14/00

CPC classification number: C07F17/00 ,  C23C16/18 ,  C23C16/405

Abstract: A Ti-precursor for forming a Ti-containing thin layer represented by the formula I below, a method of preparing the same, a method of preparing a Ti-containing thin layer by employing the Ti-precursor and the Ti-containing thin layer are provided: wherein X1 and X2 are independently F, Cl, Br or I; n is 0, 1, 2, 3, 4 or 5; m is 0, 1, 2, 3, 4, 5, 6 or 7; and R1 and R2 are independently a linear or branched C1-10 alkyl group. The Ti precursor for forming the Ti-containing thin layer can be deposited at a deposition temperature of approximately 150° C.˜200° C., and a Ti-containing thin layer with a high performance character can be prepared.

Abstract translation: 用于形成由下式I表示的含Ti薄层的Ti前体，其制备方法，通过使用Ti前体和含Ti薄层制备含Ti薄层的方法是 其中X1和X2独立地为F，Cl，Br或I; n为0，1，2，3，4或5; m为0,1,2,3,4,5,6或7; 并且R 1和R 2独立地为直链或支链C 1-10烷基。 用于形成含Ti薄层的Ti前体可以在约150℃〜200℃的沉积温度下沉积，并且可以制备具有高性能特征的含钛薄层。

公开(公告)号：US20080258127A1

公开(公告)日：2008-10-23

申请号：US12078751

申请日：2008-04-04

Applicant: Jung-Hyun Lee ,  Yoon-Ho Khang

Inventor： Jung-Hyun Lee ,  Yoon-Ho Khang

IPC: H01L47/00 ,  C01B25/14 ,  H01L29/18

CPC classification number: C23C16/305 ,  C07F7/10 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1616

Abstract: A Te precursor containing Te, a 15-group compound (for example, N) and/or a 14-group compound (for example, Si), a method of preparing the Te precursor, a Te-containing chalcogenide thin layer including the Te precursor, a method of preparing the thin layer; and a phase-change memory device. The Te precursor may be deposited at lower temperatures for forming a Te-containing chalcogenide thin layer doped with a 15-group compound (for example, N) and/or a 14-group compound (for example, Si). For example, the Te precursor may employ plasma enhanced chemical vapor deposition (PECVD) or plasma enhanced atomic layer deposition (PEALD) at lower deposition temperatures. The GST phase-change layer doped with a 15-group compound (for example, N) and/or a 14-group compound (for example, Si) formed by employing the Te precursor may have a decreased reset current, and thus when a memory device including the same is employed, its integration may be possible, and operation with higher capacity and/or higher speed may be possible.

公开(公告)号：US20080164479A1

公开(公告)日：2008-07-10

申请号：US12000242

申请日：2007-12-11

Applicant: Wenxu Xianyu ,  Jung-hyun Lee ,  Hyung-Jin Bae ,  Young-soo Park

Inventor： Wenxu Xianyu ,  Jung-hyun Lee ,  Hyung-Jin Bae ,  Young-soo Park

IPC: H01L29/04 ,  H01L21/20

CPC classification number: H01L21/28537 ,  H01L27/1021 ,  H01L29/861

Abstract: A semiconductor device including polysilicon (poly-Si) and method of manufacturing the same are provided. The semiconductor device includes a TaNx material layer and a poly-Si layer formed on the TaNx material layer. The semiconductor device including poly-Si may be manufactured by forming a TaNx material layer and forming a poly-Si layer by depositing silicon formed on the TaNx material layer and annealing silicon.

Abstract translation: 提供了包括多晶硅（poly-Si）的半导体器件及其制造方法。 该半导体器件包括形成在TaN xS材料层上的TaN 材料层和多晶硅层。 包括多晶硅的半导体器件可以通过形成TaN xS材料层并通过沉积形成在TaN材料层上的硅和退火形成多晶硅层来制造 硅。

公开(公告)号：US07396719B2

公开(公告)日：2008-07-08

申请号：US10873256

申请日：2004-06-23

Applicant: Kyoung-seok Kim ,  Hong-bae Park ,  Bong-hyun Kim ,  Sung-tae Kim ,  Jong-wan Kwon ,  Jung-hyun Lee ,  Ki-chul Kim ,  Jae-soon Lim ,  Gab-jin Nam ,  Young-sun Kim

Inventor： Kyoung-seok Kim ,  Hong-bae Park ,  Bong-hyun Kim ,  Sung-tae Kim ,  Jong-wan Kwon ,  Jung-hyun Lee ,  Ki-chul Kim ,  Jae-soon Lim ,  Gab-jin Nam ,  Young-sun Kim

IPC: H01L21/471

CPC classification number: H01L21/0228 ,  C23C16/308 ,  C23C16/45531 ,  C23C16/56 ,  H01L21/02175 ,  H01L21/02181 ,  H01L21/02205 ,  H01L21/3141 ,  H01L21/3142 ,  H01L21/3143 ,  H01L21/31645

Abstract: A method of forming a high dielectric film using atomic layer deposition (ALD), and a method of manufacturing a capacitor having the high dielectric film, include supplying a precursor containing a metal element to a semiconductor substrate and purging a reactor; supplying an oxidizer and purging the reactor; and supplying a reaction source containing nitrogen and purging the reactor.

Abstract translation: 使用原子层沉积（ALD）形成高电介质膜的方法以及制造具有高电介质膜的电容器的方法包括将含有金属元素的前体供应到半导体衬底并清洗反应器; 供应氧化剂并清洗反应器; 并供应含氮的反应源并清洗反应器。