公开(公告)号：US20050016465A1

公开(公告)日：2005-01-27

申请号：US10626156

申请日：2003-07-23

Applicant: Kartik Ramaswamy ,  Jon McChesney ,  Ananda Kumar ,  Hamid Noorbakhsh

Inventor： Kartik Ramaswamy ,  Jon McChesney ,  Ananda Kumar ,  Hamid Noorbakhsh

IPC: H01L21/68 ,  H01L21/683 ,  H02N13/00 ,  C23C16/00

CPC classification number: H01L21/6833 ,  H02N13/00

Abstract: An electrostatic chuck provides reduced electric field effects about its peripheral edge. In one version, the chuck comprises a dielectric covering an electrode having a perimeter and a wire loop extending about the perimeter, the wire loop having a radially outwardly facing surface that is substantially rounded. Alternatively, the electrode may have a central planar portion comprising a top surface and a bottom surface, and a peripheral arcuate portion having a tip with a curvature length of at least about π/8 radians between a normal to the top surface of the central planar portion and a normal to the upper surface of the tip. The electrostatic chuck is used to hold a substrate in a process chamber of a substrate processing apparatus.

Abstract translation: 静电吸盘可以减少围绕其外围边缘的电场效应。 在一个版本中，卡盘包括覆盖具有周边的电极的电介质和围绕周边延伸的导线环，所述导线环具有基本上圆形的径向向外的表面。 或者，电极可以具有包括顶表面和底表面的中心平面部分，以及周边弓形部分，其具有尖端，该尖端具有在中心平面的顶表面之间的法线之间的至少约π/ 8弧度的曲率长度 并且与尖端的上表面垂直。 静电卡盘用于将基板保持在基板处理装置的处理室中。

公开(公告)号：US06726804B2

公开(公告)日：2004-04-27

申请号：US09767282

申请日：2001-01-22

Applicant: Liang-Guo Wang ,  Kwok M. Wong ,  Shamouil Shamouilian ,  Kartik Ramaswamy

Inventor： Liang-Guo Wang ,  Kwok M. Wong ,  Shamouil Shamouilian ,  Kartik Ramaswamy

IPC: H05H100

CPC classification number: H01J37/32137 ,  C23C16/507 ,  H01J37/321

Abstract: A plasma processing apparatus and a method of operating a plasma processing apparatus are disclosed. In one embodiment, a first RF signal at a carrier frequency and a second RF signal at a second frequency are generated. An amplitude modulated signal is formed by modulating the first RF signal with the second RF signal. A plasma is generated within the plasma processing chamber using the amplitude modulated signal. Generating plasma using a frequency modulated signal is also disclosed.

Abstract translation: 公开了等离子体处理装置和操作等离子体处理装置的方法。 在一个实施例中，产生载波频率的第一RF信号和第二频率的第二RF信号。 通过用第二RF信号调制第一RF信号来形成幅度调制信号。 使用幅度调制信号在等离子体处理室内产生等离子体。 还公开了使用调频信号产生等离子体。

公开(公告)号：US06348126B1

公开(公告)日：2002-02-19

申请号：US09636699

申请日：2000-08-11

Applicant: Hiroji Hanawa ,  Yan Ye ,  Kenneth S Collins ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Tsutomu Tanaka

Inventor： Hiroji Hanawa ,  Yan Ye ,  Kenneth S Collins ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Tsutomu Tanaka

IPC: H01L2100

CPC classification number: H01J37/321 ,  H01J37/32082

Abstract: A plasma reactor for processing a workpiece includes a chamber adapted to accept processing gases in an evacuated environment including a workpiece support, a hollow conduit defining a wall of the chamber, and having respective ends opening adjacent opposite sides of the workpiece support, and a chamber wall portion in facing relationship to the workpiece support and defining a workpiece processing zone therebetween, the processing zone and the interior of the conduit forming a torroidal interior path, and an RF energy applicator irradiating gas within the chamber to maintain a plasma within the torroidal interior path.

Abstract translation: 一种用于加工工件的等离子体反应器包括适于在真空环境中接受处理气体的室，包括工件支撑件，限定室壁的中空导管，并且具有邻近工件支撑件的相对侧面打开的相应端部，以及室 壁部分与工件支撑件形成面对关系并且在它们之间限定工件加工区域，处理区域和管道内部形成环形内部路径，以及RF能量施加器照射室内的气体以将等离子体维持在环形内部 路径。

公开(公告)号：US20170352568A1

公开(公告)日：2017-12-07

申请号：US15383124

申请日：2016-12-19

Applicant: Jaeyong Cho ,  Haitao Wang ,  Vijay D. Parkhe ,  Kartik Ramaswamy ,  Chunlei Zhang

Inventor： Jaeyong Cho ,  Haitao Wang ,  Vijay D. Parkhe ,  Kartik Ramaswamy ,  Chunlei Zhang

IPC: H01L21/683 ,  H01J37/32

Abstract: An electrostatic chuck is described to carry a workpiece for processing such as high power plasma processing. In embodiments, the chuck includes a top plate to carry the workpiece, the top plate having an electrode to grip the workpiece, a cooling plate under the top plate to cool the top plate, a gas hole through the cooling plate and the top plate to feed a gas to the workpiece through the top plate, and an aperture-reducing plug in the cooling plate gas hole to conduct gas flow through the hole.

公开(公告)号：US08920597B2

公开(公告)日：2014-12-30

申请号：US13047052

申请日：2011-03-14

Applicant: Kartik Ramaswamy ,  Igor Markovsky ,  Zhigang Chen ,  James D. Carducci ,  Kenneth S. Collins ,  Shahid Rauf ,  Nipun Misra ,  Leonid Dorf ,  Zheng John Ye

Inventor： Kartik Ramaswamy ,  Igor Markovsky ,  Zhigang Chen ,  James D. Carducci ,  Kenneth S. Collins ,  Shahid Rauf ,  Nipun Misra ,  Leonid Dorf ,  Zheng John Ye

IPC: H01L21/00 ,  C23C16/00 ,  H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/32018 ,  H01J37/32082 ,  H01J37/32183 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32587 ,  H01J37/32596 ,  H01J37/3266 ,  H01J37/32715 ,  H01J37/32834

Abstract: The disclosure pertains to a capactively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a folded structure and symmetrical power distribution.

Abstract translation: 本公开涉及一种通过具有折叠结构和对称功率分布的阻抗匹配同轴谐振器施加VHF功率的Capactively coupled等离子体源。

公开(公告)号：US08878926B2

公开(公告)日：2014-11-04

申请号：US13236039

申请日：2011-09-19

Applicant: Zheng John Ye ,  Kartik Ramaswamy ,  Troy S. Detrick ,  Kenneth S. Collins

Inventor： Zheng John Ye ,  Kartik Ramaswamy ,  Troy S. Detrick ,  Kenneth S. Collins

IPC: G01N25/72

CPC classification number: G01N25/72

Abstract: Embodiments of the present invention provide methods and apparatus for analyzing thermal properties of bonding materials within a composite structure. One embodiment of the present invention provides an apparatus for analyzing thermal property of a bonding material within a structure. The apparatus comprises a structure support having a supporting surface configured to support the structure, a heat source configured to direct a heat flux to the structure supported by the supporting surface of the structure support, and a camera facing the structure supported on the structure support and configured to capture thermal images of the structure supported on the structure support.

Abstract translation: 本发明的实施例提供了用于分析复合结构内的接合材料的热性能的方法和装置。 本发明的一个实施例提供一种用于分析结构内的接合材料的热性能的装置。 该装置包括：结构支撑件，其具有构造成支撑该结构的支撑表面;热源，其构造成将热通量引导到由结构支撑件的支撑表面支撑的结构;以及面向支撑在结构支撑上的结构的照相机， 被配置为捕获支持在结构支撑上的结构的热图像。

公开(公告)号：US20140262031A1

公开(公告)日：2014-09-18

申请号：US13893199

申请日：2013-05-13

Applicant: Sergey G. BELOSTOTSKIY ,  Alexander MARCACCI ,  Kartik RAMASWAMY ,  Srinivas D. NEMANI ,  Andrew NGUYEN ,  Yogananda SARODE

Inventor： Sergey G. BELOSTOTSKIY ,  Alexander MARCACCI ,  Kartik RAMASWAMY ,  Srinivas D. NEMANI ,  Andrew NGUYEN ,  Yogananda SARODE

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32091

Abstract: A multi-chambered processing platform includes one or more multi-mode plasma processing systems. In embodiments, a multi-mode plasma processing system includes a multi-mode source assembly having a primary source to drive an RF signal on a showerhead electrode within the process chamber and a secondary source to generate a plasma with by driving an RF signal on an electrode downstream of the process chamber. In embodiments, the primary 7 source utilizes RF energy of a first frequency, while the secondary source utilizes RF energy of second, different frequency. The showerhead electrode is coupled to ground through a frequency dependent filter that adequately discriminates between the first and second frequencies for the showerhead electrode to be RF powered during operation of the primary source, yet adequately grounded during operation of the secondary plasma source without electrical contact switching or reliance on physically moving parts.

Abstract translation: 多室处理平台包括一个或多个多模式等离子体处理系统。 在实施例中，多模式等离子体处理系统包括多模式源组件，该多模式源组件具有用于驱动处理室内的喷头电极上的RF信号的主要源，以及辅助源以通过在其上驱动RF信号来产生等离子体 电极在处理室的下游。 在实施例中，主7源使用第一频率的RF能量，而次级源利用第二频率的RF能量。 淋浴头电极通过频率相关的滤波器耦合到地面，该滤波器在初级源的操作期间充分地辨别喷头电极的第一和第二频率以进行RF供电，而在没有电接触切换的二级等离子体源的操作期间充分地接地 或依赖物理移动部件。

公开(公告)号：US08709706B2

公开(公告)日：2014-04-29

申请号：US13455784

申请日：2012-04-25

Applicant: Banqiu Wu ,  Ajay Kumar ,  Kartik Ramaswamy ,  Omkaram Nalamasu

Inventor： Banqiu Wu ,  Ajay Kumar ,  Kartik Ramaswamy ,  Omkaram Nalamasu

IPC: G03F7/26

CPC classification number: G03F7/36 ,  G03F7/40

Abstract: The present invention provides methods and an apparatus controlling and minimizing process defects in a development process, and modifying line width roughness (LWR) of a photoresist layer after the development process, and maintaining good profile control during subsequent etching processes. In one embodiment, a method for forming features on a substrate includes developing and removing exposed areas in the photosensitive layer disposed on the substrate in the electron processing chamber by predominantly using electrons, removing contaminants from the substrate by predominantly using electrons, and etching the non-photosensitive polymer layer exposed by the developed photosensitive layer in the electron processing chamber by predominantly using electrons.

Abstract translation: 本发明提供了控制和最小化显影过程中的工艺缺陷的方法和装置，并且在显影过程之后修改光致抗蚀剂层的线宽粗糙度（LWR），并且在随后的蚀刻工艺期间保持良好的轮廓控制。 在一个实施例中，用于在衬底上形成特征的方法包括通过主要使用电子来显影和去除设置在电子处理室中的衬底上的感光层中的暴露区域，通过主要使用电子从衬底去除污染物， 通过主要使用电子在电子处理室中由显影的感光层曝光的光敏聚合物层。

公开(公告)号：US08513939B2

公开(公告)日：2013-08-20

申请号：US13052280

申请日：2011-03-21

Applicant: Hiroji Hanawa ,  Satoru Kobayashi ,  Kartik Ramaswamy ,  Shahid Rauf

Inventor： Hiroji Hanawa ,  Satoru Kobayashi ,  Kartik Ramaswamy ,  Shahid Rauf

IPC: G01R31/02 ,  G01R27/08

CPC classification number: G01R27/32 ,  G01R19/0061 ,  H05H1/0081

Abstract: An RF voltage probe is adapted to have a long coaxial cable to permit a measuring device to be connected remotely from the probe without distorting the voltage measurement.

Abstract translation: RF电压探头适于具有长同轴电缆，以允许测量设备远离探头连接，而不会使电压测量失真。

公开(公告)号：US08513889B2

公开(公告)日：2013-08-20

申请号：US12899048

申请日：2010-10-06

Applicant: Chunlei Zhang ,  Sergio F. Shoji ,  Andrey Semenin ,  Kartik Ramaswamy ,  James P. Cruse ,  Bryan Liao

Inventor： Chunlei Zhang ,  Sergio F. Shoji ,  Andrey Semenin ,  Kartik Ramaswamy ,  James P. Cruse ,  Bryan Liao

IPC: H03H7/38

CPC classification number: H03H7/40 ,  H01J37/32183 ,  H01J37/32935 ,  H05H1/46

Abstract: Methods and apparatus for tuning matching networks are provided herein. A method of tuning a matching network includes providing a matching network coupling an RF source to a load, the matching network having a tunable element disposed at a first set point; increasing a value of the tunable element by a first step above the first set point; sensing a first adjusted value of a reflected RF power; decreasing the value of the tunable element by the first step below the first set point; sensing a second adjusted value of the reflected RF power; comparing the first and the second adjusted values of the reflected RF power; and moving the tunable element to a second set point that corresponds to a position having a lowest adjusted value of the reflected RF power. The method may be repeated until the reflected RF power falls within an acceptable reflected RF power range.

Abstract translation: 本文提供了用于调整匹配网络的方法和装置。 调整匹配网络的方法包括提供将RF源耦合到负载的匹配网络，所述匹配网络具有设置在第一设定点处的可调谐元件; 通过在第一设定点之上的第一步增加可调元件的值; 感测反射RF功率的第一调整值; 将可调谐元件的值降低到低于第一设定点的第一步; 感测反射RF功率的第二调整值; 比较反射RF功率的第一和第二调整值; 以及将所述可调元件移动到对应于具有所述反射RF功率的最低调整值的位置的第二设定点。 可以重复该方法，直到反射的RF功率落在可接受的反射RF功率范围内。