公开(公告)号：US20110233539A1

公开(公告)日：2011-09-29

申请号：US13064466

申请日：2011-03-28

申请人： Jong-Baek Seon ,  Myung-Kwan Ryu ,  Kyung-Bae Park ,  Sang-Yoon Lee ,  Bon-Won Koo

发明人： Jong-Baek Seon ,  Myung-Kwan Ryu ,  Kyung-Bae Park ,  Sang-Yoon Lee ,  Bon-Won Koo

IPC分类号： H01L29/02 ,  H01L21/20 ,  B32B9/00 ,  B32B7/02

CPC分类号： H01L29/12 ,  H01L31/1884 ,  Y02E10/50 ,  Y10T428/24975

摘要： Oxide thin film, electronic devices including the oxide thin film and methods of manufacturing the oxide thin film, the methods including (A) applying an oxide precursor solution comprising at least one of zinc (Zn), indium (In) and tin (Sn) on a substrate, (B) heat-treating the oxide precursor solution to form an oxide layer, and (C) repeating the steps (A) and (B) to form a plurality of the oxide layers.

摘要翻译： 氧化物薄膜，包括氧化物薄膜的电子器件和制造氧化物薄膜的方法，包括（A）应用包含锌（Zn），铟（In）和锡（Sn）中的至少一种的氧化物前体溶液的方法， （B）对氧化物前体溶液进行热处理以形成氧化物层，（C）重复步骤（A）和（B）以形成多个氧化物层。

公开(公告)号：US07923722B2

公开(公告)日：2011-04-12

申请号：US11987610

申请日：2007-12-03

申请人： Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

发明人： Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

IPC分类号： H01L29/12

CPC分类号： H01L29/78696 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/7869

摘要： A TFT includes a zinc oxide (ZnO)-based channel layer having a plurality of semiconductor layers. An uppermost of the plurality of semiconductor layers has a Zn concentration less than that of a lower semiconductor layer to suppress an oxygen vacancy due to plasma. The uppermost semiconductor layer of the channel layer also has a tin (Sn) oxide, a chloride, a fluoride, or the like, which has a relatively stable bonding energy against plasma. The uppermost semiconductor layer is relatively strong against plasma shock and less decomposed when being exposed to plasma, thereby suppressing an increase in carrier concentration.

公开(公告)号：US07915610B2

公开(公告)日：2011-03-29

申请号：US12615315

申请日：2009-11-10

申请人： Myung-kwan Ryu ,  Jun-seong Kim ,  Sang-yoon Lee ,  Euk-che Hwang ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

发明人： Myung-kwan Ryu ,  Jun-seong Kim ,  Sang-yoon Lee ,  Euk-che Hwang ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

IPC分类号： H01L29/10

CPC分类号： H01L29/7869

摘要： A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near the surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.

摘要翻译： 这里提供了一种ZnO基薄膜晶体管（TFT），以及TFT的制造方法。 ZnO基TFT具有包含ZnO和ZnCl的沟道层，其中ZnCl相对于等离子体具有比ZnO高的结合能。 ZnCl是通过整个沟道层形成的，具体地形成在沟道层表面附近的区域。 由于ZnCl强度足够暴露于等离子体蚀刻气体时不会分解，因此可以防止载流子浓度的增加。 ZnCl在沟道层中的分布可能是由于在沟道层图案化期间在等离子体气体中包含氯（Cl）。

公开(公告)号：US07760885B2

公开(公告)日：2010-07-20

申请号：US10845195

申请日：2004-05-14

申请人： Kyung-bae Park

发明人： Kyung-bae Park

IPC分类号： H04L9/08

CPC分类号： H04L9/0825 ,  H04L9/083 ,  H04L9/3013 ,  H04L63/0442 ,  H04L63/061 ,  H04L63/0869 ,  H04L2209/80

摘要： A method of distributing encryption keys among nodes in a mobile ad hoc network, and a network device using the same. In particular, a method of distributing encryption keys, which guarantees the security of a ciphertext in the mobile ad hoc network. The method of distributing the encryption keys among nodes including a first node and a second node in the mobile ad hoc network include creating a private key and a public key based on a first encryption method by the first node; if the first node transmits the created public key to Node B, creating predetermined parameters operable to create a common key according to a second encryption method by the second node.

摘要翻译： 一种在移动自组织网络中的节点之间分配加密密钥的方法，以及使用该密钥的网络设备。 特别地，一种分发加密密钥的方法，其保证移动自组织网络中密文的安全性。 在移动自组织网络中包括第一节点和第二节点的节点之间分配加密密钥的方法包括基于第一节点的第一加密方法来创建私钥和公钥; 如果第一节点将创建的公钥发送到节点B，则根据第二节点的第二加密方法创建可操作以创建公共密钥的预定参数。

公开(公告)号：US20100178738A1

公开(公告)日：2010-07-15

申请号：US12707115

申请日：2010-02-17

申请人： Takashi NOGUCHI ,  Jong-man KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Ji-sim JUNG ,  Hyuck LIM

发明人： Takashi NOGUCHI ,  Jong-man KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Ji-sim JUNG ,  Hyuck LIM

IPC分类号： H01L21/84

CPC分类号： H01L29/78645 ,  H01L27/1288 ,  H01L27/3244 ,  H01L29/78624 ,  H01L29/78696

摘要： A transistor includes; at least two polycrystalline silicon layers disposed substantially parallel to each other, each polycrystalline silicon layer including a channel region and at least two high conductivity regions disposed at opposing sides of the channel region; a gate which corresponds to the channel region of the two polycrystalline silicon layers and which crosses the two polycrystalline silicon layers, and a gate insulating layer interposed between the gate and the two polycrystalline silicon layers, wherein low conductivity regions are disposed adjacent to one edge of the gate and are formed between the channel region and one high conductivity region of each polycrystalline silicon layer.

摘要翻译： 晶体管包括： 至少两个多晶硅层基本上彼此平行地布置，每个多晶硅层包括沟道区和至少两个设置在沟道区相对侧的高导电性区; 对应于两个多晶硅层的沟道区并与两个多晶硅层交叉的栅极和介于栅极和两个多晶硅层之间的栅极绝缘层，其中低导电性区域邻近 并且形成在每个多晶硅层的沟道区域和一个高导电率区域之间。

公开(公告)号：US20100072480A1

公开(公告)日：2010-03-25

申请号：US12453295

申请日：2009-05-06

申请人： Byung-wook Yoo ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

发明人： Byung-wook Yoo ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/78696 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66765

摘要： A thin film transistor (TFT) and a method of manufacturing the same are provided, the TFT including a gate insulating layer on a gate. A channel may be formed on a portion of the gate insulating layer corresponding to the gate. A metal material may be formed on a surface of the channel. The metal material crystallizes the channel. A source and a drain may contact side surfaces of the channel.

摘要翻译： 提供薄膜晶体管（TFT）及其制造方法，TFT在栅极上包括栅极绝缘层。 可以在对应于栅极的栅极绝缘层的一部分上形成沟道。 可以在通道的表面上形成金属材料。 金属材料使通道结晶。 源极和漏极可以接触通道的侧表面。

公开(公告)号：US20100059756A1

公开(公告)日：2010-03-11

申请号：US12453293

申请日：2009-05-06

申请人： Kyung-bae Park ,  Myung-kwan Ryu ,  Byung-wook Yoo ,  Sang-yoon Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-seok Son ,  Ji-sim Jung

发明人： Kyung-bae Park ,  Myung-kwan Ryu ,  Byung-wook Yoo ,  Sang-yoon Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-seok Son ,  Ji-sim Jung

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/78609 ,  H01L29/78618

摘要： Disclosed is a thin film transistor (TFT). The TFT may include an intermediate layer between a channel and a source and drain. An increased off current, which may occur to a drain area of the TFT, is reduced due to the intermediate layer. Accordingly, the TFT may be stably driven.

摘要翻译： 公开了一种薄膜晶体管（TFT）。 TFT可以包括通道与源极和漏极之间的中间层。 由于中间层，由于TFT的漏极区域可能发生的增加的截止电流减小。 因此，可以稳定地驱动TFT。

公开(公告)号：US07662678B2

公开(公告)日：2010-02-16

申请号：US11473067

申请日：2006-06-23

申请人： Wenxu Xianyu ,  Hans S. Cho ,  Takashi Noguchi ,  Young-Soo Park ,  Xiaoxin Zhang ,  Huaxiang Yin ,  Hyuck Lim ,  Kyung-Bae Park ,  Suk-Pil Kim

发明人： Wenxu Xianyu ,  Hans S. Cho ,  Takashi Noguchi ,  Young-Soo Park ,  Xiaoxin Zhang ,  Huaxiang Yin ,  Hyuck Lim ,  Kyung-Bae Park ,  Suk-Pil Kim

IPC分类号： H01L21/00 ,  H01L29/76

CPC分类号： C30B29/06 ,  Y10T428/10

摘要： Provided are methods of forming a more highly-oriented silicon thin layer having a larger grain size, and a substrate having the same. The methods may include forming an aluminum (Al) layer on a base substrate, forming a more highly-oriented Al layer by recrystallizing the Al layer under vacuum, forming a more highly-oriented γ-Al2O3 layer on the more highly-oriented Al layer and/or epitaxially growing a silicon layer on the more highly-oriented γ-Al2O3 layer. The method may be used to manufacture a semiconductor device having higher carrier mobility.

摘要翻译： 提供了形成具有较大晶粒尺寸的更高取向硅薄层的方法以及具有其的基板。 所述方法可以包括在基底上形成铝（Al）层，通过在真空下重结晶Al层形成更高取向的Al层，在更高取向的Al层上形成更高取向的γ-Al 2 O 3层 和/或在更高取向的γ-Al 2 O 3层上外延生长硅层。 该方法可用于制造具有较高载流子迁移率的半导体器件。

公开(公告)号：US20090149007A1

公开(公告)日：2009-06-11

申请号：US12370642

申请日：2009-02-13

申请人： Ji-sim JUNG ,  Takashi Noguchi ,  Hans S. Cho ,  Do-young Kim ,  Kyung-bae Park

发明人： Ji-sim JUNG ,  Takashi Noguchi ,  Hans S. Cho ,  Do-young Kim ,  Kyung-bae Park

IPC分类号： H01L21/36

CPC分类号： H01L29/66757 ,  H01L29/66765 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78678

摘要： Provided are an electronic device and a method of manufacturing the same. The device includes a plastic substrate, a transparent thermal conductive layer stacked on the plastic substrate, a polysilicon layer stacked on the thermal conductive layer; and a functional device disposed on the polysilicon layer. The functional device is any one of a transistor, a light emitting device, and a memory device. The functional device may be a thin film transistor including a gate stack stacked on the polysilicon layer.

摘要翻译： 提供一种电子设备及其制造方法。 该装置包括塑料基板，层叠在塑料基板上的透明导热层，堆叠在导热层上的多晶硅层; 以及设置在所述多晶硅层上的功能元件。 功能器件是晶体管，发光器件和存储器件中的任何一个。 功能器件可以是包括堆叠在多晶硅层上的栅极堆叠的薄膜晶体管。

公开(公告)号：US20080299702A1

公开(公告)日：2008-12-04

申请号：US12110744

申请日：2008-04-28

申请人： Kyoung-seok SON ,  Sang-yoon LEE ,  Myung-kwan RYU ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Ji-sim JUNG

发明人： Kyoung-seok SON ,  Sang-yoon LEE ,  Myung-kwan RYU ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Ji-sim JUNG

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L29/7869

摘要： A ZnO-based thin film transistor (TFT) is provided herein. Also provided is a method for manufacturing the TFT. The ZnO-based TFT is very sensitive to the oxygen concentration present in a channel layer. In order to prevent damage to a channel layer of a bottom gate TFT, and to avoid a deep negative threshold voltage resulting from damage to the channel layer, the method for manufacturing the ZnO-based TFT comprises formation of an etch stop layer or a passivation layer comprising unstable or incompletely bonded oxygen, and annealing the layers to induce an interfacial reaction between the oxide layer and the channel layer and to reduce the carrier concentration.

摘要翻译： 本文提供了一种ZnO基薄膜晶体管（TFT）。 还提供了一种用于制造TFT的方法。 ZnO基TFT对通道层中存在的氧浓度非常敏感。 为了防止对底栅TFT的沟道层的损坏，并且为了避免由于对沟道层的损坏而产生的深负阈值电压，制造ZnO基TFT的方法包括形成蚀刻停止层或钝化层 层，其包含不稳定或不完全结合的氧，并且退火层以在氧化物层和沟道层之间引起界面反应并降低载流子浓度。