DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
    81.
    发明申请
    DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
    显示基板及其制造方法

    公开(公告)号:US20110169000A1

    公开(公告)日:2011-07-14

    申请号:US12904507

    申请日:2010-10-14

    CPC classification number: G02F1/136209 G02F2001/13312 G02F2203/11

    Abstract: A display substrate includes a first light blocking pattern formed on a base substrate, a first switching element, a second light blocking pattern formed on the base substrate, and a first sensing element. The first light blocking pattern is configured to block visible light and transmit infrared light. The first switching element includes a first semiconductor pattern, a first source electrode, a first drain electrode, and a first gate electrode. The second light blocking pattern is configured to block the visible light and transmit the infrared light. The first sensing element is configured to detect the infrared light, and includes a second semiconductor pattern, a second source electrode, a second drain electrode, and a second gate electrode.

    Abstract translation: 显示基板包括形成在基底基板上的第一遮光图案,第一开关元件,形成在基底基板上的第二遮光图案和第一感测元件。 第一遮光图案被配置为阻挡可见光并透射红外光。 第一开关元件包括第一半导体图案,第一源极电极,第一漏极电极和第一栅极电极。 第二遮光图案被配置为阻挡可见光并透射红外光。 第一感测元件被配置为检测红外光,并且包括第二半导体图案,第二源电极,第二漏电极和第二栅电极。

    PHOTOMASK AND THIN-FILM TRANSISTOR FABRICATED USING THE PHOTOMASK
    82.
    发明申请
    PHOTOMASK AND THIN-FILM TRANSISTOR FABRICATED USING THE PHOTOMASK 有权
    光电子和薄膜晶体管使用光电制造

    公开(公告)号:US20110156046A1

    公开(公告)日:2011-06-30

    申请号:US12978446

    申请日:2010-12-24

    CPC classification number: G03F1/38 G03F1/00 G03F1/14 G03F1/36 H01L29/41733

    Abstract: A photomask includes; a source electrode pattern including; a first electrode portion which extends in a first direction, a second electrode portion which extends in the first direction and is substantially parallel to the first electrode portion, and a third electrode portion which extends from a first end of the first electrode portion to a first end of the second electrode portion and is rounded with a first curvature, a drain electrode pattern which extends in the first direction and is disposed between the first electrode portion and the second electrode portion, wherein an end of the drain electrode pattern is rounded to correspond to the third electrode portion; and a channel region pattern which is disposed between the source electrode pattern and the drain electrode pattern, wherein a center location of the first curvature and a center location of the rounded portion of the end of the drain electrode pattern are the same.

    Abstract translation: 光掩模包括 源电极图案,包括: 沿第一方向延伸的第一电极部分,沿第一方向延伸并基本上平行于第一电极部分的第二电极部分,以及从第一电极部分的第一端延伸到第一电极部分的第三电极部分, 并且以第一曲率圆形化,漏电极图案,其沿第一方向延伸并且设置在第一电极部分和第二电极部分之间,其中漏极电极图案的端部被圆化以对应 到所述第三电极部分; 以及设置在源极电极图案和漏极电极图案之间的沟道区域图案,其中第一曲率的中心位置和漏极电极图案的端部的圆形部分的中心位置相同。

    DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
    86.
    发明申请
    DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
    显示装置及其制造方法

    公开(公告)号:US20110057189A1

    公开(公告)日:2011-03-10

    申请号:US12761958

    申请日:2010-04-16

    CPC classification number: G06F3/0421 G06F3/0412 H01L27/1251 H01L27/323

    Abstract: A display device includes a lower panel including a lower substrate and a pixel transistor formed on the lower substrate; and an upper panel facing the lower panel, and including an upper substrate, a sensing transistor formed on the upper substrate, and a readout transistor connected to the sensing transistor and transmitting a signal. The readout transistor includes a first lower gate electrode formed on the upper substrate, a first semiconductor layer formed on the first lower gate electrode and overlaps the first gate electrode, and a first source electrode and a first drain electrode disposed on the first semiconductor layer. The sensing transistor includes a light blocking film disposed on the upper substrate, a second lower gate electrode contacting the light blocking film on the light blocking film, a second semiconductor layer overlapping the light blocking film on the second lower gate electrode, a second source electrode and a second drain electrode formed on the second semiconductor layer, and a second upper gate electrode overlapping the second semiconductor layer on the second source electrode and the second drain electrode.

    Abstract translation: 显示装置包括:下面板,包括下基板和形成在下基板上的像素晶体管; 以及面向下面板的上面板,并且包括上基板,形成在上基板上的检测晶体管,以及连接到感测晶体管并传输信号的读出晶体管。 读出晶体管包括形成在上基板上的第一下栅极电极,形成在第一下栅电极上并与第一栅电极重叠的第一半导体层,以及设置在第一半导体层上的第一源电极和第一漏电极。 感测晶体管包括设置在上基板上的遮光膜,与遮光膜接触的第二下栅电极,与第二下栅电极上的遮光膜重叠的第二半导体层,第二源电极 以及形成在第二半导体层上的第二漏电极和与第二源电极和第二漏电极上的第二半导体层重叠的第二上栅电极。

    FAN-OUT UNIT AND THIN-FILM TRANSISTOR ARRAY SUBSTRATE HAVING THE SAME
    89.
    发明申请
    FAN-OUT UNIT AND THIN-FILM TRANSISTOR ARRAY SUBSTRATE HAVING THE SAME 有权
    扇出单元和薄膜晶体管阵列基板

    公开(公告)号:US20100155729A1

    公开(公告)日:2010-06-24

    申请号:US12637658

    申请日:2009-12-14

    Abstract: A fan-out unit which can control a resistance difference among channels with efficient space utilization and a thin-film transistor (TFT) array substrate having the fan-out unit are presented. The fan-out unit includes: an insulating substrate; a first wiring layer which is formed on the insulating substrate and connected to a pad; a second wiring layer which is formed on the insulating substrate and connected to a TFT; and a resistance controller which is connected between the first wiring layer and the second wiring layer and includes a plurality of first resistors extending parallel to the first wiring layer and a plurality of second resistors extending perpendicular to the first resistors and alternately connecting to the first resistors, wherein the first resistors are longer than the second resistors.

    Abstract translation: 提出了一种能够控制具有高效空间利用的通道之间的电阻差的扇出单元和具有扇出单元的薄膜晶体管(TFT)阵列基板。 扇出单元包括:绝缘基板; 第一布线层,其形成在所述绝缘基板上并连接到焊盘; 第二布线层,其形成在绝缘基板上并连接到TFT; 以及电阻控制器,其连接在第一布线层和第二布线层之间,并且包括平行于第一布线层延伸的多个第一电阻器和垂直于第一电阻器延伸的多个第二电阻器,并交替地连接到第一电阻器 ,其中所述第一电阻器比所述第二电阻器长。

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