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    Dual XY Variable Aperture In An Ion Implantation System
    81.
    发明申请
    Dual XY Variable Aperture In An Ion Implantation System 有权

    公开(公告)号：US20230021619A1

    公开(公告)日：2023-01-26

    申请号：US17382041

    申请日：2021-07-21

    Applicant: Applied Materials, Inc.

    Inventor： Jun Lu ,  Frank Sinclair ,  Shane W. Conley ,  Michael Honan

    IPC: H01J37/30 ,  H01J37/317 ,  H01J37/02

    Abstract: An aperture diaphragm capable of varying the size of an aperture in two dimensions is disclosed. The aperture diaphragm may be utilized in an ion implantation system, such as between the mass analyzer and the acceleration column. In this way, the aperture diaphragm may be used to control at least one parameter of the ion beam. These parameters may include angular spread in the height direction, angular spread in the width direction, beam current or cross-sectional area. Various embodiments of the aperture diaphragm are shown. In certain embodiments, the size of the aperture in the height and width directions may be independently controlled, while in other embodiments, the ratio between height and width is constant.

    ELECTRODYNAMIC MASS ANALYSIS WITH RF BIASED ION SOURCE
    83.
    发明申请
    ELECTRODYNAMIC MASS ANALYSIS WITH RF BIASED ION SOURCE 有权

    公开(公告)号：US20220139691A1

    公开(公告)日：2022-05-05

    申请号：US17088443

    申请日：2020-11-03

    Applicant: Applied Materials, Inc.

    Inventor： Alexandre Likhanskii ,  Joseph C. Olson ,  Frank Sinclair ,  Peter F. Kurunczi

    IPC: H01J49/36 ,  H01J49/10 ,  H01J49/06

    Abstract: Provided herein are approaches for performing electrodynamic mass analysis with a radio frequency (RF) biased ion source to reduce ion beam energy spread. In some embodiments, a system may include an ion source including a power supply, the ion source operable to generate a plasma within a chamber housing, and an extraction power assembly including a first power supply and a second power supply electrically coupled with the chamber housing of the ion source, wherein the first power supply and the second power supply are operable to bias the chamber housing of the ion source with a time modulated voltage to extract an ion beam from the ion source. The system may further include an electrodynamic mass analysis (EDMA) assembly operable to receive the ion beam and perform mass analysis on the ion beam.

    In Situ Angle Measurement Using Channeling
    84.
    发明申请
    In Situ Angle Measurement Using Channeling 有权

    公开(公告)号：US20210305011A1

    公开(公告)日：2021-09-30

    申请号：US16828218

    申请日：2020-03-24

    Applicant: Applied Materials, Inc.

    Inventor： Frank Sinclair ,  Jonathan Gerald England ,  Joseph C. Olson

    IPC: H01J37/244 ,  H01J37/20 ,  H01J37/317 ,  H01J37/141

    Abstract: A system and method that is capable of measuring the incident angle of an ion beam, especially an ion beam comprising heavier ions, is disclosed. In one embodiment, X-rays, rather than ions, are used to determine the channeling direction. In another embodiment, the workpiece is constructed, at least in part, of a material having a high molecular weight such that heaver ion beams can be measured. Further, in another embodiment, the parameters of the ion beam are measured across an entirety of the beam, allowing components of the ion implantation system to be further tuned to create a more uniform beam.

    ELECTROSTATIC FILTER PROVIDING REDUCED PARTICLE GENERATION
    85.
    发明申请
    ELECTROSTATIC FILTER PROVIDING REDUCED PARTICLE GENERATION 有权

    公开(公告)号：US20210183609A1

    公开(公告)日：2021-06-17

    申请号：US16714097

    申请日：2019-12-13

    Applicant: APPLIED Materials, Inc.

    Inventor： Alexandre Likhanskii ,  Antonella Cucchetti ,  Eric D. Hermanson ,  Frank Sinclair ,  Jay T. Scheuer ,  Robert C. Lindberg

    IPC: H01J37/12 ,  H01J37/24 ,  H01J37/32 ,  H01J37/30 ,  H01L21/425

    Abstract: Provided herein are approaches for decreasing particle generation in an electrostatic lens. In some embodiments, an ion implantation system may include an electrostatic lens including an entrance for receiving an ion beam and an exit for delivering the ion beam towards a target, the electrostatic lens including a first terminal electrode, a first suppression electrode, and a first ground electrode disposed along a first side of an ion beamline, wherein the first ground electrode is grounded and positioned adjacent the exit. The electrostatic lens may further include a second terminal electrode, a second suppression electrode, and a second ground electrode disposed along a second side of the ion beamline, wherein the second ground electrode is grounded and positioned adjacent the exit. The implantation system may further include a power supply operable to supply a voltage and a current to the electrostatic lens for controlling the ion beam.

    APPARATUS AND METHOD FOR CONTROLLING ION BEAM USING ELECTOSTATIC FILTER
    86.
    发明申请
    APPARATUS AND METHOD FOR CONTROLLING ION BEAM USING ELECTOSTATIC FILTER 有权

    公开(公告)号：US20210159043A1

    公开(公告)日：2021-05-27

    申请号：US17167791

    申请日：2021-02-04

    Applicant: Applied Materials, Inc.

    Inventor： Alexandre Likhanskii ,  Frank Sinclair ,  Shengwu Chang

    IPC: H01J37/08 ,  H01J37/12 ,  H01J37/147 ,  H01J37/317

    Abstract: An apparatus is provided. The apparatus may include a main chamber, an entrance tunnel, the entrance tunnel having an entrance axis extending into the main chamber; an exit tunnel, connected to the main chamber and defining an exit axis, wherein the entrance tunnel and the exit tunnel define a beam bend of less than 25 degrees therebetween, and an electrode assembly, disposed in the main chamber, and defining a beam path between the entrance tunnel and the exit tunnel. The electrode assembly may include an upper electrode, disposed on a first side of the beam path, and a plurality of lower electrodes, disposed on a second side of the beam path, the plurality of lower electrodes comprising at least three electrodes.

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