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98 条记录 (耗时 0.044 秒)

    Multi-step release method for electrochemically fabricated structures
    81.
    发明授权
    Multi-step release method for electrochemically fabricated structures 有权
    电化学制造结构的多步释放方法

    公开(公告)号：US08512578B2

    公开(公告)日：2013-08-20

    申请号：US12892734

    申请日：2010-09-28

    申请人： Adam L. Cohen ,  Michael S. Lockard ,  Dale S. McPherson

    发明人： Adam L. Cohen ,  Michael S. Lockard ,  Dale S. McPherson

    IPC分类号： C25D5/02 ,  B81C1/00

    CPC分类号： C23C18/1689 ,  B33Y10/00 ,  B81C1/0019 ,  C23C18/1605 ,  C23C18/1651 ,  C25D1/003 ,  G03F7/00

    摘要： Multi-layer structures are electrochemically fabricated from at least one structural material (e.g. nickel), that is configured to define a desired structure and which may be attached to a substrate, and from at least one sacrificial material (e.g. copper) that surrounds the desired structure. After structure formation, the sacrificial material is removed by a multi-stage etching operation. In some embodiments sacrificial material to be removed may be located within passages or the like on a substrate or within an add-on component. The multi-stage etching operations may be separated by intermediate post processing activities, they may be separated by cleaning operations, or barrier material removal operations, or the like. Barriers may be fixed in position by contact with structural material or with a substrate or they may be solely fixed in position by sacrificial material and are thus free to be removed after all retaining sacrificial material is etched.

    摘要翻译： 多层结构由至少一种结构材料（例如镍）进行电化学制造，其被构造成限定期望的结构并且可以附着到基底上，并且由至少一种围绕期望的材料的牺牲材料（例如铜） 结构体。 在结构形成之后，通过多级蚀刻操作去除牺牲材料。 在一些实施例中，待移除的牺牲材料可以位于基底上或附加部件内的通道等内。 多级蚀刻操作可以通过中间后处理活动来分离，它们可以通过清洁操作或阻隔材料去除操作等分开。 障碍物可以通过与结构材料或基底接触而固定就位，或者它们可以通过牺牲材料单独固定在适当位置，并且因此在所有保留牺牲材料被蚀刻之后可以被自由地去除。

    Method and Apparatus for Maintaining Parallelism of Layers and/or Achieving Desired Thicknesses of Layers During the Electrochemical Fabrication of Structures
    83.
    发明申请
    Method and Apparatus for Maintaining Parallelism of Layers and/or Achieving Desired Thicknesses of Layers During the Electrochemical Fabrication of Structures 有权
    在电化学制造结构期间维持层的平行化和/或实现层的期望厚度的方法和装置

    公开(公告)号：US20120181180A1

    公开(公告)日：2012-07-19

    申请号：US13356398

    申请日：2012-01-23

    申请人： Uri Frodis ,  Adam L. Cohen ,  Michael S. Lockard

    发明人： Uri Frodis ,  Adam L. Cohen ,  Michael S. Lockard

    IPC分类号： C25D5/48 ,  C25D21/12 ,  C25D5/02

    CPC分类号： C25D5/48 ,  B33Y10/00 ,  B81C1/00492 ,  B81C99/0065 ,  B81C2201/0104 ,  B81C2201/0197 ,  C25D1/00 ,  C25D1/003 ,  C25D5/022 ,  C25D5/10 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76885 ,  Y10T156/1052

    摘要： Some embodiments of the present invention provide processes and apparatus for electrochemically fabricating multilayer structures (e.g. mesoscale or microscale structures) with improved endpoint detection and parallelism maintenance for materials (e.g. layers) that are planarized during the electrochemical fabrication process. Some methods involve the use of a fixture during planarization that ensures that planarized planes of material are parallel to other deposited planes within a given tolerance. Some methods involve the use of an endpoint detection fixture that ensures precise heights of deposited materials relative to an initial surface of a substrate, relative to a first deposited layer, or relative to some other layer formed during the fabrication process. In some embodiments planarization may occur via lapping while other embodiments may use a diamond fly cutting machine.

    摘要翻译： 本发明的一些实施例提供了用于电化学制造多层结构（例如中尺度或微结构）的方法和装置，其具有改进的端点检测和用于在电化学制造过程中被平坦化的材料（例如层）的并行维护。 一些方法涉及在平坦化期间使用夹具，其确保材料的平面化平面平行于给定公差内的其它沉积平面。 一些方法涉及使用端点检测夹具，其相对于第一沉积层或相对于在制造过程期间形成的一些其它层，相对于衬底的初始表面确保沉积材料的精确高度。 在一些实施例中，平面化可以通过研磨发生，而其他实施例可以使用金刚石切片机。

    Method and Apparatus for Maintaining Parallelism of Layers and/or Achieving Desired Thicknesses of Layers During the Electrochemical Fabrication of Structures
    84.
    发明申请
    Method and Apparatus for Maintaining Parallelism of Layers and/or Achieving Desired Thicknesses of Layers During the Electrochemical Fabrication of Structures 审中-公开
    在电化学制造结构期间维持层的平行化和/或实现层的期望厚度的方法和装置

    公开(公告)号：US20100038253A1

    公开(公告)日：2010-02-18

    申请号：US12560276

    申请日：2009-09-15

    申请人： Uri Frodis ,  Adam L. Cohen ,  Michael S. Lockard

    发明人： Uri Frodis ,  Adam L. Cohen ,  Michael S. Lockard

    IPC分类号： C25D5/02 ,  B32B38/04 ,  C25D5/48 ,  B32B37/00

    CPC分类号： C25D5/48 ,  B33Y10/00 ,  B81C1/00492 ,  B81C99/0065 ,  B81C2201/0104 ,  B81C2201/0197 ,  C25D1/00 ,  C25D1/003 ,  C25D5/022 ,  C25D5/10 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76885 ,  Y10T156/1052

    摘要： Some embodiments of the present invention provide processes and apparatus for electrochemically fabricating multilayer structures (e.g. mesoscale or microscale structures) with improved endpoint detection and parallelism maintenance for materials (e.g. layers) that are planarized during the electrochemical fabrication process. Some methods involve the use of a fixture during planarization that ensures that planarized planes of material are parallel to other deposited planes within a given tolerance. Some methods involve the use of an endpoint detection fixture that ensures precise heights of deposited materials relative to an initial surface of a substrate, relative to a first deposited layer, or relative to some other layer formed during the fabrication process. In some embodiments planarization may occur via lapping while other embodiments may use a diamond fly cutting machine.

    摘要翻译： 本发明的一些实施例提供了用于电化学制造多层结构（例如中尺度或微结构）的方法和装置，其具有改进的端点检测和用于在电化学制造过程中被平坦化的材料（例如层）的并行维护。 一些方法涉及在平坦化期间使用夹具，其确保材料的平面化平面平行于给定公差内的其它沉积平面。 一些方法涉及使用端点检测夹具，其相对于第一沉积层或相对于在制造过程期间形成的一些其它层，相对于衬底的初始表面确保沉积材料的精确高度。 在一些实施例中，平面化可以通过研磨发生，而其他实施例可以使用金刚石切片机。

    Method and apparatus for maintaining parallelism of layers and/or achieving desired thicknesses of layers during the electrochemical fabrication of structures
    87.
    发明授权
    Method and apparatus for maintaining parallelism of layers and/or achieving desired thicknesses of layers during the electrochemical fabrication of structures 有权
    在结构的电化学制造期间保持层的平行度和/或实现所需厚度的层的方法和装置

    公开(公告)号：US07271888B2

    公开(公告)日：2007-09-18

    申请号：US11029220

    申请日：2005-01-03

    申请人： Uri Frodis ,  Adam L. Cohen ,  Michael S. Lockard

    发明人： Uri Frodis ,  Adam L. Cohen ,  Michael S. Lockard

    IPC分类号： G01N21/88

    CPC分类号： C25D5/48 ,  B33Y10/00 ,  B81C1/00492 ,  B81C99/0065 ,  B81C2201/0104 ,  B81C2201/0197 ,  C25D1/00 ,  C25D1/003 ,  C25D5/022 ,  C25D5/10 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76885 ,  Y10T156/1052

    摘要： Some embodiments of the present invention provide processes and apparatus for electrochemically fabricating multilayer structures (e.g. mesoscale or microscale structures) with improved endpoint detection and parallelism maintenance for materials (e.g. layers) that are planarized during the electrochemical fabrication process. Some methods involve the use of a fixture during planarization that ensures that planarized planes of material are parallel to other deposited planes within a given tolerance. Some methods involve the use of an endpoint detection fixture that ensures precise heights of deposited materials relative to an initial surface of a substrate, relative to a first deposited layer, or relative to some other layer formed during the fabrication process. In some embodiments planarization may occur via lapping while other embodiments may use a diamond fly cutting machine.

    摘要翻译： 本发明的一些实施例提供了用于电化学制造多层结构（例如中尺度或微结构）的方法和装置，其具有改进的端点检测和用于在电化学制造过程中被平坦化的材料（例如层）的并行维护。 一些方法涉及在平坦化期间使用夹具，其确保材料的平面化平面平行于给定公差内的其它沉积平面。 一些方法涉及使用端点检测夹具，其相对于第一沉积层或相对于在制造过程期间形成的一些其它层，相对于衬底的初始表面确保沉积材料的精确高度。 在一些实施例中，平面化可以通过研磨发生，而其他实施例可以使用金刚石切片机。

    EFAB Methods and Apparatus Including Spray Metal or Powder Coating Processes
    89.
    发明申请
    EFAB Methods and Apparatus Including Spray Metal or Powder Coating Processes 审中-公开
    包括喷涂金属或粉末涂层工艺的EFAB方法和设备

    公开(公告)号：US20090139869A1

    公开(公告)日：2009-06-04

    申请号：US12324135

    申请日：2008-11-26

    申请人： Michael S. Lockard ,  Adam L. Cohen ,  Roger W. Barton

    发明人： Michael S. Lockard ,  Adam L. Cohen ,  Roger W. Barton

    IPC分类号： C25D5/02 ,  C25D5/10 ,  C25D5/48

    CPC分类号： C23C4/02 ,  C25D1/00 ,  C25D1/003

    摘要： Various embodiments of the invention present techniques for forming structures via a combined electrochemical fabrication process and a thermal spraying process or powder deposition processes. In a first set of embodiments, selective deposition occurs via masking processes (e.g. a contact masking process or adhered mask process) and thermal spraying or powder deposition is used in blanket deposition processes to fill in voids left by selective deposition processes. In a second set of embodiments, after selective deposition of a first material, a second material is blanket deposited to fill in the voids, the two depositions are planarized to a common level and then a portion of the first or second materials is removed (e.g. by etching) and a third material is sprayed into the voids left by the etching operation. In both embodiments the resulting depositions are planarized to a desired layer thickness in preparation for adding additional layers.

    摘要翻译： 本发明的各种实施例提出了通过组合的电化学制造工艺和热喷涂工艺或粉末沉积工艺形成结构的技术。 在第一组实施例中，通过掩模工艺（例如接触掩模工艺或粘附的掩模工艺）进行选择性沉积，并且在覆盖沉积工艺中使用热喷涂或粉末沉积来填充通过选择性沉积工艺留下的空隙。 在第二组实施例中，在选择性沉积第一材料之后，第二材料被覆盖沉积以填充空隙，将两个沉积物平坦化到共同的水平，然后去除第一或第二材料的一部分（例如 通过蚀刻），并且通过蚀刻操作将第三材料喷射到留下的空隙中。 在两个实施方案中，将所得沉积物平坦化至所需的层厚度，以准备添加另外的层。