公开(公告)号：US20110262871A1

公开(公告)日：2011-10-27

申请号：US13177741

申请日：2011-07-07

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F7/20

CPC classification number: G02B1/111 ,  G03F7/091 ,  G03F7/11 ,  G03F7/2041 ,  Y10S430/111

Abstract: Various lithography methods are disclosed herein. In an example, a method includes forming a resist layer over a substrate; forming a coating material layer that includes one of an acid and a chelate compound over the resist layer; and exposing the resist layer and the coating material layer to radiation, wherein during the exposing, the one of the acid and the chelate compound in the coating material layer substantially neutralizes any quencher that diffuses into the coating material layer from the resist layer.

Abstract translation: 本文公开了各种光刻方法。 在一个实例中，一种方法包括在衬底上形成抗蚀剂层; 在抗蚀剂层上形成包含酸和螯合物中的一种的涂料层; 以及将抗蚀剂层和涂层材料层暴露于辐射，其中在曝光期间，涂层材料层中的酸和螯合物之一基本上中和从抗蚀剂层扩散到涂层材料层中的任何猝灭剂。

公开(公告)号：US20110159670A1

公开(公告)日：2011-06-30

申请号：US12649462

申请日：2009-12-30

Applicant: Chien-Wei Wang ,  Ming-Feng Shieh ,  Ching-Yu Chang

Inventor： Chien-Wei Wang ,  Ming-Feng Shieh ,  Ching-Yu Chang

IPC: H01L21/265 ,  G03F7/004 ,  G03F7/027 ,  H01L21/302

CPC classification number: G03F7/42 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/40 ,  G03F7/422 ,  G03F7/423 ,  H01L21/30604 ,  H01L21/31133

Abstract: Provided is a photoresist that includes a polymer having a backbone that is breakable and a photo acid generator that is free of bonding from the polymer. Further, provided is a method of fabricating a semiconductor device. The method includes providing a device substrate. A material layer is formed over the substrate. A photoresist material is formed over the material layer. The photoresist material has a polymer that includes a backbone. The photoresist material is patterned to form a patterned photoresist layer. A fabrication process is then performed to the material layer, wherein the patterned photoresist layer serves as a mask in the fabrication process. Thereafter, the patterned photoresist layer is treated in a manner that breaks the backbone of the polymer. The patterned photoresist layer is then removed.

Abstract translation: 提供一种光致抗蚀剂，其包括具有可破坏的主链的聚合物和不与聚合物结合的光酸产生剂。 此外，提供了制造半导体器件的方法。 该方法包括提供器件衬底。 材料层形成在衬底上。 在材料层上形成光致抗蚀剂材料。 光致抗蚀剂材料具有包括骨架的聚合物。 图案化光致抗蚀剂材料以形成图案化的光致抗蚀剂层。 然后对材料层进行制造工艺，其中图案化的光致抗蚀剂层在制造过程中用作掩模。 此后，以破坏聚合物主链的方式处理图案化的光刻胶层。 然后去除图案化的光致抗蚀剂层。

公开(公告)号：US07718348B2

公开(公告)日：2010-05-18

申请号：US12244857

申请日：2008-10-03

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03C5/00

CPC classification number: G03F7/70441 ,  G03F1/36

Abstract: In a photolithography process, a photoresist layer is formed on a substrate. A photomask is aligned over the substrate to transfer pattern images defined in the photomask on the substrate. The photomask includes first and second patterns of different light transmission rates, and a dummy pattern surrounding the second pattern having a light transmission rate lower than that of the first pattern. The substrate is exposed to a light radiation through the photomask. The photoresist layer then is developed to form the pattern images. The dummy pattern is dimensionally configured to allow light transmission, but in a substantially amount so that the dummy pattern is not imaged during exposure.

Abstract translation: 在光刻工艺中，在基板上形成光致抗蚀剂层。 光掩模在衬底上对准以传输在衬底上的光掩模中限定的图案图像。 光掩模包括不同透光率的第一和第二图案，以及围绕第二图案的虚拟图案，其透光率低于第一图案的透光率。 将基板暴露于通过光掩模的光辐射。 然后将光致抗蚀剂层显影以形成图案图像。 虚拟图案被尺寸地构造成允许光透射，但是基本上是这样的，使得在曝光期间伪图案不被成像。

公开(公告)号：US20100093176A1

公开(公告)日：2010-04-15

申请号：US12536805

申请日：2009-08-06

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L21/306

CPC classification number: H01L21/32139 ,  H01L21/31111 ,  H01L21/31133

Abstract: The present disclosure provides a method for making a semiconductor device. The method includes forming a material layer on a substrate; forming a sacrificial layer on the material layer, where the material layer and sacrificial layer each as a thickness less than 100 angstrom; forming a patterned photoresist layer on the sacrificial layer; applying a first wet etching process to etch the sacrificial layer to form a patterned sacrificial layer using the patterned photoresist layer as a mask; applying a second wet etching process to etch the first material layer; and applying a third wet etching process to remove the patterned sacrificial layer.

Abstract translation: 本公开提供了制造半导体器件的方法。 该方法包括在基板上形成材料层; 在材料层上形成牺牲层，其中材料层和牺牲层各自的厚度小于100埃; 在所述牺牲层上形成图案化的光致抗蚀剂层; 施加第一湿蚀刻工艺以蚀刻牺牲层以使用图案化的光致抗蚀剂层作为掩模形成图案化的牺牲层; 施加第二湿蚀刻工艺以蚀刻第一材料层; 以及施加第三湿蚀刻工艺以去除图案化的牺牲层。

公开(公告)号：US07531296B2

公开(公告)日：2009-05-12

申请号：US11209684

申请日：2005-08-24

Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin

Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/26

CPC classification number: G03F7/40 ,  G03F7/405

Abstract: A method for forming an etch-resistant photoresist pattern on a semiconductor substrate is provided. In one embodiment, a photoresist layer is formed on the substrate. The photoresist layer is exposed and developed to form a photoresist pattern. A polymer-containing layer is formed over the photoresist pattern. The photoresist pattern and the polymer-containing layer are thermally treated so that polymer is substantially diffused into the photoresist pattern thereby enhancing the etch resistance of the photoresist pattern. The polymer-containing layer is thereafter removed.

Abstract translation: 提供了一种在半导体衬底上形成耐蚀刻光刻胶图案的方法。 在一个实施例中，在基板上形成光致抗蚀剂层。 光致抗蚀剂层被曝光和显影以形成光致抗蚀剂图案。 在光致抗蚀剂图案上形成含聚合物的层。 光致抗蚀剂图案和含聚合物的层被热处理，使得聚合物基本上扩散到光致抗蚀剂图案中，从而增强光致抗蚀剂图案的耐蚀刻性。 然后除去含聚合物的层。

公开(公告)号：US20080299487A1

公开(公告)日：2008-12-04

申请号：US11828809

申请日：2007-07-26

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03C1/04 ,  G03F5/00

CPC classification number: G03F7/2041 ,  G03F7/0046

Abstract: An immersion lithography resist material comprising a matrix polymer having a first polarity and an additive having a second polarity that is substantially greater than the first polarity. The additive may have a molecular weight that is less than about 1000 Dalton. The immersion lithography resist material may have a contact angle that is substantially greater than the contact angle of the matrix polymer.

Abstract translation: 一种浸没式光刻抗蚀剂材料，包括具有第一极性的基质聚合物和具有基本上大于第一极性的第二极性的添加剂。 添加剂可以具有小于约1000道尔顿的分子量。 浸没式光刻抗蚀剂材料可具有基本上大于基质聚合物的接触角的接触角。

公开(公告)号：US20080185021A1

公开(公告)日：2008-08-07

申请号：US11671570

申请日：2007-02-06

Applicant: Chih-Cheng Chiu ,  Ching-Yu Chang

Inventor： Chih-Cheng Chiu ,  Ching-Yu Chang

IPC: B08B3/04

CPC classification number: G03F1/82 ,  Y10S134/902

Abstract: A method for cleaning a photomask includes cleaning the photomask with a chemical cleaner, introducing a solution to the photomask, the solution is configured to react with residuals generated from the chemical cleaner to form insoluble precipitates, and rinsing the photomask with a fluid to remove the insoluble precipitates from the photomask.

Abstract translation: 用于清洁光掩模的方法包括用化学清洁剂清洁光掩模，将溶液引入到光掩模中，溶液被配置为与由化学清洁剂产生的残余物反应以形成不溶性沉淀物，并用流体冲洗光掩模以除去 来自光掩模的不溶性沉淀物。

公开(公告)号：US20080102648A1

公开(公告)日：2008-05-01

申请号：US11555558

申请日：2006-11-01

Applicant: Chin-Hsiang Lin ,  Hsiao-Tzu Lu ,  Kuei Shun Chen ,  Ching-Yu Chang ,  Vencent Chang

Inventor： Chin-Hsiang Lin ,  Hsiao-Tzu Lu ,  Kuei Shun Chen ,  Ching-Yu Chang ,  Vencent Chang

IPC: H01L21/302 ,  G03G13/10

CPC classification number: H01L21/0271 ,  G03F7/095

Abstract: A method of forming a resist pattern in a semiconductor device layer includes forming a buffer layer on a semiconductor device layer and forming a resist layer on the buffer layer. A decomposing agent is released into a portion of the buffer layer by a portion of the resist layer whereupon the portion of the buffer layer and the portion of the resist layer are removed to form a process window substantially free of resist residue that can be subsequently exploited for etching of the semiconductor device layer.

Abstract translation: 在半导体器件层中形成抗蚀剂图案的方法包括在半导体器件层上形成缓冲层，并在缓冲层上形成抗蚀剂层。 分解剂通过抗蚀剂层的一部分释放到缓冲层的一部分中，随后缓冲层的部分和抗蚀剂层的一部分被去除以形成基本上不含抗蚀剂残留物的工艺窗口，其可以被随后利用 用于蚀刻半导体器件层。

公开(公告)号：US07323393B2

公开(公告)日：2008-01-29

申请号：US11715527

申请日：2007-03-07

Applicant: Yu-Lin Yen ,  Ching-Yu Chang

Inventor： Yu-Lin Yen ,  Ching-Yu Chang

IPC: H01L21/76

CPC classification number: G03F9/7003 ,  G03F7/70633 ,  G03F9/7076 ,  G03F9/708 ,  G03F9/7084 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

Abstract: An integrated circuit capable of operating despite a profile shift is disclosed. Overlay marks on the integrated circuit are surrounded by a trench that tends to relieve the effect of a profile shift caused by stress applied to the integrated circuit. The position of the overlay marks tends, therefore, not to be affected by the stress.

Abstract translation: 公开了尽管轮廓偏移的能够运行的集成电路。 集成电路上的覆盖标记被沟槽包围，该沟槽倾向于减轻由施加到集成电路的应力引起的轮廓移位的影响。 因此，覆盖标记的位置倾向于不受应力的影响。

公开(公告)号：US07252911B2

公开(公告)日：2007-08-07

申请号：US10810920

申请日：2004-03-26

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F1/00

CPC classification number: G03F1/60 ,  G03F1/40 ,  H01J2237/31794

Abstract: An ESD-resistant photomask and method of preventing mask ESD damage is disclosed. The ESD-resistant photomask includes a mask substrate, a pattern-forming material provided on the substrate, a circuit pattern defined by exposure regions etched in the pattern-forming material, and positive or negative ions implanted into the mask substrate throughout ion implantation regions. The ions in the ion implantation regions dissipate electrostatic charges on the mask, thus preventing the buildup of electrostatic charges which could otherwise attract image-distorting particles to the mask or damage the mask.

Abstract translation: 公开了一种防静电防护光掩模和防止掩膜ESD损伤的方法。 防静电光掩模包括掩模基板，设置在基板上的图案形成材料，由在图案形成材料中蚀刻的曝光区域限定的电路图案，以及在离子注入区域中注入到掩模基板中的正或负离子。 离子注入区域中的离子消耗掩模上的静电电荷，从而防止静电电荷的积累，否则可能会吸引图像变形颗粒到掩模或损坏掩模。