公开(公告)号：US06589839B1

公开(公告)日：2003-07-08

申请号：US09522627

申请日：2000-03-10

申请人： Cem Basceri ,  Gurtej S. Sandhu

发明人： Cem Basceri ,  Gurtej S. Sandhu

IPC分类号： H01L218242

CPC分类号： H01L28/55 ,  H01L21/3105 ,  H01L28/84

摘要： A unique electrochemical process fills oxygen vacancies in dielectrics while reducing oxidation of nearby electrodes and conductors. Preferably, an electromagnetic field or bias is applied to a dielectric. The bias causes oxygen vacancies in the dielectric to migrate to the surface of the dielectric. As the oxygen vacancies migrate toward the surface, oxygen ions fill the oxygen vacancies. In one embodiment, a unique plasma treatment provides the oxygen ions that react with the oxygen vacancies. In another embodiment, a unique electrolysis treatment provides the oxygen ions that react with the oxygen vacancies.

摘要翻译： 独特的电化学过程填充电介质中的氧空位，同时减少附近电极和导体的氧化。 优选地，将电磁场或偏压施加到电介质。 偏压导致电介质中的氧空位迁移到电介质的表面。 当氧空位向表面迁移时，氧离子填充氧空位。 在一个实施例中，独特的等离子体处理提供与氧空位反应的氧离子。 在另一个实施方案中，独特的电解处理提供与氧空位反应的氧离子。

公开(公告)号：US07393741B2

公开(公告)日：2008-07-01

申请号：US11704512

申请日：2007-02-09

申请人： Gurtej S. Sandhu ,  H. Montgomery Manning ,  Stephen J. Kramer

发明人： Gurtej S. Sandhu ,  H. Montgomery Manning ,  Stephen J. Kramer

IPC分类号： H01L21/8242

CPC分类号： H01L28/91 ,  H01L27/10817 ,  H01L27/10852

摘要： The invention comprises methods of forming pluralities of capacitors. In one implementation, metal is formed over individual capacitor storage node locations on a substrate. A patterned masking layer is formed over the metal. The patterned masking layer comprises openings therethrough to an outer surface of the metal. Individual of the openings are received over individual of the capacitor storage node locations. A pit is formed in the metal outer surface within individual of the openings. After forming the pits, the metal is anodically oxidized through the openings effective to form a single metal oxide-lined channel in individual of the openings over the individual capacitor storage nodes. Individual capacitor electrodes are formed within the channels in electrical connection with the individual capacitor storage node locations. At least some of the metal oxide is removed from the substrate, and the individual capacitor electrodes are incorporated into a plurality of capacitors. Other aspects and implementations are contemplated.

摘要翻译： 本发明包括形成多个电容器的方法。 在一个实施方案中，在衬底上的各个电容器存储节点上形成金属。 在金属上形成图案化掩模层。 图案化掩模层包括通过其穿过金属外表面的开口。 各个开口的单独的电容器存储节点位置被接收。 在各开口内的金属外表面上形成凹坑。 在形成凹坑之后，金属通过开口阳极氧化，有效地在各个电容器存储节点上的开口中形成单个金属氧化物衬里的通道。 单独的电容器电极形成在与各个电容器存储节点位置电连接的通道内。 从衬底去除至少一些金属氧化物，并且将各个电容器电极结合到多个电容器中。 考虑了其他方面和实现。

公开(公告)号：US07199005B2

公开(公告)日：2007-04-03

申请号：US11196593

申请日：2005-08-02

申请人： Gurtej S. Sandhu ,  H. Montgomery Manning ,  Stephen J. Kramer

发明人： Gurtej S. Sandhu ,  H. Montgomery Manning ,  Stephen J. Kramer

IPC分类号： H01L21/8242 ,  H01L21/20

CPC分类号： H01L28/91 ,  H01L27/10817 ,  H01L27/10852

摘要： The invention comprises methods of forming pluralities of capacitors. In one implementation, metal is formed over individual capacitor storage node locations on a substrate. A patterned masking layer is formed over the metal. The patterned masking layer comprises openings therethrough to an outer surface of the metal. Individual of the openings are received over individual of the capacitor storage node locations. A pit is formed in the metal outer surface within individual of the openings. After forming the pits, the metal is anodically oxidized through the openings effective to form a single metal oxide-lined channel in individual of the openings over the individual capacitor storage nodes. Individual capacitor electrodes are formed within the channels in electrical connection with the individual capacitor storage node locations. At least some of the metal oxide is removed from the substrate, and the individual capacitor electrodes are incorporated into a plurality of capacitors. Other aspects and implementations are contemplated.

公开(公告)号：US08227313B2

公开(公告)日：2012-07-24

申请号：US12637989

申请日：2009-12-15

申请人： Cem Basceri ,  Gurtej S. Sandhu

发明人： Cem Basceri ,  Gurtej S. Sandhu

IPC分类号： H01L21/8236

CPC分类号： G11C11/5671 ,  G11C8/12 ,  G11C16/0416 ,  G11C16/0466 ,  H01L29/513 ,  H01L29/792

摘要： One-transistor memory devices facilitate nonvolatile data storage through the manipulation of oxygen vacancies within a trapping layer of a field-effect transistor (FET), thereby providing control and variation of threshold voltages of the transistor. Various threshold voltages may be assigned a data value, providing the ability to store one or more bits of data in a single memory cell. To control the threshold voltage, the oxygen vacancies may be manipulated by trapping electrons within the vacancies, freeing trapped electrons from the vacancies, moving the vacancies within the trapping layer and annihilating the vacancies.

摘要翻译： 单晶体管存储器件通过操纵场效应晶体管（FET）的俘获层内的氧空位来促进非易失性数据存储，从而提供晶体管的阈值电压的控制和变化。 可以为各种阈值电压分配数据值，提供将一个或多个位数据存储在单个存储器单元中的能力。 为了控制阈值电压，可以通过在空位内捕获电子来操纵氧空位，从空位释放被俘获的电子，移动捕获层内的空位并湮灭空位。

公开(公告)号：US20090179231A1

公开(公告)日：2009-07-16

申请号：US12410179

申请日：2009-03-24

申请人： Nirmal Ramaswamy ,  Gurtej S. Sandhu ,  Cem Basceri ,  Eric R. Blomiley

发明人： Nirmal Ramaswamy ,  Gurtej S. Sandhu ,  Cem Basceri ,  Eric R. Blomiley

IPC分类号： H01L29/772

CPC分类号： H01L29/66787 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/66742 ,  H01L29/78642

摘要： This invention includes methods of forming layers comprising epitaxial silicon, and field effect transistors. In one implementation, a method of forming a layer comprising epitaxial silicon comprises epitaxially growing a silicon-comprising layer from an exposed monocrystalline material. The epitaxially grown silicon comprises at least one of carbon, germanium, and oxygen present at a total concentration of no greater than 1 atomic percent. In one implementation, the layer comprises a silicon germanium alloy comprising at least 1 atomic percent germanium, and further comprises at least one of carbon and oxygen at a total concentration of no greater than 1 atomic percent. Other aspects and implementations are contemplated.

摘要翻译： 本发明包括形成包括外延硅和场效应晶体管的层的方法。 在一个实施方案中，形成包含外延硅的层的方法包括从暴露的单晶材料外延生长含硅层。 外延生长的硅包括以不超过1原子％的总浓度存在的碳，锗和氧中的至少一种。 在一个实施方案中，该层包括含有至少1原子％锗的硅锗合金，并且还包含总浓度不大于1原子％的碳和氧中的至少一种。 考虑了其他方面和实现。

公开(公告)号：US07393563B2

公开(公告)日：2008-07-01

申请号：US11394989

申请日：2006-03-30

申请人： Cem Basceri ,  Irina Vasilyeva ,  Ammar Derraa ,  Philip H. Campbell ,  Gurtej S. Sandhu

发明人： Cem Basceri ,  Irina Vasilyeva ,  Ammar Derraa ,  Philip H. Campbell ,  Gurtej S. Sandhu

IPC分类号： C23C16/14 ,  C23C16/24

CPC分类号： H01L21/28518 ,  C23C16/42 ,  H01L21/28556

摘要： Chemical vapor deposition methods of forming titanium suicide including layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4 and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4 to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide including layer on the substrate.

摘要翻译： 公开了在衬底上形成包括层的硅化钛的化学气相沉积方法。 TiCl 4 S和至少一种硅烷首先以等于或高于TiCl 4的第一体积比与硅烷一起进料到室中，持续第一段时间。 该比例足够高以避免钛硅化物在衬底上的可测量沉积。 或者，在第一时间段内没有可测量的硅烷进料到室中。 无论如何，在第一阶段之后，将TiCl 4 S和至少一种硅烷以等于或低于TiCl 4的第二体积比与硅烷一起进料到室中，持续第二阶段 时间。 如果在第一时间段内进料至少一种硅烷，则第二体积比率低于第一体积比。 无论如何，第二次进料对于等离子体有效地提高了化学气相沉积在基底上的包含硅的硅化钛。

公开(公告)号：US07323064B2

公开(公告)日：2008-01-29

申请号：US10636028

申请日：2003-08-06

申请人： Cem Basceri ,  Gurtej S. Sandhu

发明人： Cem Basceri ,  Gurtej S. Sandhu

IPC分类号： B08B7/00

CPC分类号： C23C16/4407 ,  B08B7/0021

摘要： The invention includes a method of cleaning a processing chamber by introducing supercritical fluid into the processing chamber. A residue over an internal chamber surface is contacted with the supercritical fluid to remove the residue from the surface. The invention also includes a method of removing deposited material from internal surfaces of a processing system. A cleaning agent comprising at least one of C3H8, C2H6 and CH4 is provided in supercritical phase into at least a portion of the processing system. A material deposited on an internal surface of the processing system is contacted with the cleaning agent to remove at least a portion of the deposited material.

摘要翻译： 本发明包括通过将超临界流体引入处理室来清洁处理室的方法。 内部室表面上的残余物与超临界流体接触以从表面除去残余物。 本发明还包括从处理系统的内表面去除沉积材料的方法。 一种清洁剂，其包含C 3 H 8，C 2 H 6和CH 3以及C 3 H 6， 4超临界相位被提供到处理系统的至少一部分。 沉积在处理系统的内表面上的材料与清洁剂接触以去除沉积材料的至少一部分。

公开(公告)号：US07276416B2

公开(公告)日：2007-10-02

申请号：US11256424

申请日：2005-10-20

申请人： Nirmal Ramaswamy ,  Gurtej S. Sandhu ,  Cem Basceri ,  Eric R. Blomiley

发明人： Nirmal Ramaswamy ,  Gurtej S. Sandhu ,  Cem Basceri ,  Eric R. Blomiley

IPC分类号： H01L21/336

CPC分类号： H01L29/66787 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/66553 ,  H01L29/66666 ,  H01L29/7827 ,  H01L29/78642

摘要： The invention includes methods of forming epitaxial silicon-comprising material and methods of forming vertical transistors. In one implementation, a method of forming epitaxial silicon-comprising material includes providing a substrate comprising monocrystalline material. A first portion of the monocrystalline material is outwardly exposed while a second portion of the monocrystalline material is masked. A first silicon-comprising layer is epitaxially grown from the exposed monocrystalline material of the first portion and not from the monocrystalline material of the masked second portion. After growing the first silicon-comprising layer, the second portion of the monocrystalline material is unmasked. A second silicon-comprising layer is then epitaxially grown from the first silicon-comprising layer and from the unmasked monocrystalline material of the second portion. Other aspects and implementations are contemplated.

摘要翻译： 本发明包括形成外延含硅材料的方法和形成垂直晶体管的方法。 在一个实施方案中，形成外延含硅材料的方法包括提供包括单晶材料的衬底。 单晶材料的第一部分向外暴露，而单晶材料的第二部分被掩蔽。 第一含硅层从第一部分的暴露的单晶材料而不是被掩蔽的第二部分的单晶材料外延生长。 在生长第一含硅层之后，单晶材料的第二部分被未掩蔽。 然后从第一含硅层和第二部分的未掩模的单晶材料外延生长第二含硅层。 考虑了其他方面和实现。

公开(公告)号：US07268034B2

公开(公告)日：2007-09-11

申请号：US11480089

申请日：2006-06-30

申请人： Cem Basceri ,  Gurtej S. Sandhu

发明人： Cem Basceri ,  Gurtej S. Sandhu

IPC分类号： H01L21/70 ,  H01L21/8242

CPC分类号： H01L28/91 ,  H01L27/10817 ,  H01L27/10852

摘要： A method of forming a plurality of capacitors includes providing a plurality of capacitor electrodes comprising sidewalls. The plurality of capacitor electrodes are supported at least in part with a retaining structure which engages the sidewalls, with the retaining structure comprising a fluid pervious material. A capacitor dielectric material is deposited over the capacitor electrodes through the fluid pervious material of the retaining structure effective to deposit capacitor dielectric material over portions of the sidewalls received below the retaining structure. Capacitor electrode material is deposited over the capacitor dielectric material through the fluid pervious material of the retaining structure effective to deposit capacitor electrode material over at least some of the capacitor dielectric material received below the retaining structure. Integrated circuitry independent of method of fabrication is also contemplated.

摘要翻译： 形成多个电容器的方法包括提供包括侧壁的多个电容器电极。 多个电容器电极至少部分地由与侧壁接合的保持结构支撑，保持结构包括透液材料。 电容器电介质材料沉积在电容器电极上，通过保持结构的流体可渗透材料，其有效地将电容器电介质材料沉积在容纳在保持结构下方的侧壁的部分上。 电容器电极材料通过保持结构的流体可透过材料沉积在电容器介电材料上，有效地将电容器电极材料沉积在容纳在保持结构下方的电容器电介质材料的至少一些之上。 还考虑了与制造方法无关的集成电路。

公开(公告)号：US07129535B2

公开(公告)日：2006-10-31

申请号：US10704284

申请日：2003-11-06

申请人： Cem Basceri ,  F. Daniel Gealy ,  Gurtej S. Sandhu

发明人： Cem Basceri ,  F. Daniel Gealy ,  Gurtej S. Sandhu

IPC分类号： H01L27/108 ,  H01L21/8242

CPC分类号： H01L27/10855 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/57

摘要： The invention includes methods in which metal oxide dielectric materials are deposited over barrier layers. The barrier layers can comprise compositions of metal and one or more of carbon, boron and nitrogen, and the metal oxide of the dielectric material can comprise the same metal as the barrier layer. The dielectric material/barrier layer constructions can be incorporated into capacitors. The capacitors can be used in, for example, DRAM cells, which in turn can be used in electronic systems.

摘要翻译： 本发明包括其中金属氧化物电介质材料沉积在阻挡层上的方法。 阻挡层可以包括金属和碳，硼和氮中的一种或多种的组合物，并且介电材料的金属氧化物可以包含与阻挡层相同的金属。 电介质材料/阻挡层结构可以结合到电容器中。 电容器可以用在例如DRAM单元中，DRAM单元又可以用在电子系统中。