System and method for creating a focus-exposure model of a lithography process
    81.
    发明授权
    System and method for creating a focus-exposure model of a lithography process 有权
    用于创建光刻工艺的焦点曝光模型的系统和方法

    公开(公告)号:US08065636B2

    公开(公告)日:2011-11-22

    申请号:US12782666

    申请日:2010-05-18

    IPC分类号: G06F17/50

    摘要: A system and a method for creating a focus-exposure model of a lithography process are disclosed. The system and the method utilize calibration data along multiple dimensions of parameter variations, in particular within an exposure-defocus process window space. The system and the method provide a unified set of model parameter values that result in better accuracy and robustness of simulations at nominal process conditions, as well as the ability to predict lithographic performance at any point continuously throughout a complete process window area without a need for recalibration at different settings. With a smaller number of measurements required than the prior-art multiple-model calibration, the focus-exposure model provides more predictive and more robust model parameter values that can be used at any location in the process window.

    摘要翻译: 公开了一种用于创建光刻工艺的聚焦曝光模型的系统和方法。 系统和方法利用参数变化的多个维度的校准数据,特别是在曝光 - 散焦过程窗口空间内。 该系统和方法提供了一套统一的模型参数值,可在标称工艺条件下提供更好的模拟精度和鲁棒性,以及能够在整个过程窗口区域内连续预测任何点的光刻性能,而无需 重新校准在不同的设置。 与现有技术的多模型校准相比,要进行的测量数量要少一些,聚焦曝光模型提供了更多的预测性和更健壮的模型参数值,可以在过程窗口中的任何位置使用。

    Fast Freeform Source and Mask Co-Optimization Method
    82.
    发明申请
    Fast Freeform Source and Mask Co-Optimization Method 有权
    快速自由源和掩模协同优化方法

    公开(公告)号:US20110230999A1

    公开(公告)日:2011-09-22

    申请号:US13130548

    申请日:2009-11-20

    申请人: Luoqi Chen Jun Ye Yu Cao

    发明人: Luoqi Chen Jun Ye Yu Cao

    IPC分类号: G06F19/00

    摘要: The present invention relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present invention significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present invention allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present invention allows for free-form optimization, without the constraints required by conventional optimization techniques.

    摘要翻译: 本发明涉及光刻设备和工艺,更具体地涉及用于优化用于光刻设备和工艺的照明源和掩模的工具。 根据某些方面,本发明通过允许直接计算成本函数的梯度来显着加快优化的收敛。 根据其他方面,本发明允许同时优化源和掩模,从而显着加速整体收敛。 根据另外的方面,本发明允许自由形式优化,而不需要常规优化技术所要求的限制。

    System and method for lithography simulation
    83.
    发明授权
    System and method for lithography simulation 有权
    光刻模拟系统和方法

    公开(公告)号:US07873937B2

    公开(公告)日:2011-01-18

    申请号:US11527010

    申请日:2006-09-26

    摘要: A system has been developed for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the system accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques. In this regard, in one embodiment, the system employs a lithography simulation system architecture, including application-specific hardware accelerators, and a processing technique to accelerate and facilitate verification, characterization and/or inspection of a mask design, for example, RET design, including detailed simulation and characterization of the entire lithography process to verify that the design achieves and/or provides the desired results on final wafer pattern. The system includes: (1) general purpose-type computing device(s) to perform the case-based logic having branches and inter-dependency in the data handling and (2) accelerator subsystems to perform a majority of the computation intensive tasks.

    摘要翻译: 已经开发了用于模拟,验证,检查,表征,确定和/或评估光刻设计,技术和/或系统和/或由其执行的单独功能或其中使用的组件的系统。 在一个实施例中,该系统加速了光刻特性和/或性质的光刻模拟,检查,表征和/或评估,以及光刻系统和处理技术的影响和/或相互作用。 在这方面,在一个实施例中,该系统采用光刻仿真系统架构,包括应用专用硬件加速器,以及用于加速和促进掩模设计的验证,表征和/或检验的处理技术,例如RET设计, 包括对整个光刻工艺的详细的仿真和表征,以验证设计在最终的晶片图案上实现和/或提供期望的结果。 该系统包括:(1)通用目的型计算设备,用于执行在数据处理中具有分支和相互依赖性的基于案例的逻辑,以及(2)加速器子系统执行大部分计算密集型任务。

    DELTA TCC FOR FAST SENSITIVITY MODEL COMPUTATION
    84.
    发明申请
    DELTA TCC FOR FAST SENSITIVITY MODEL COMPUTATION 有权
    DELTA TCC快速灵敏度模型计算

    公开(公告)号:US20100260427A1

    公开(公告)日:2010-10-14

    申请号:US12614180

    申请日:2009-11-06

    IPC分类号: G06K9/68

    摘要: A method for determining a difference between a reference image and a further image of a pattern, the method including determining a reference imaging function; determining parameters of a difference function representative of a difference between the reference imaging function and a further imaging function; calculating a difference between the reference image and the further image of the pattern based on the difference function and the determined parameters.

    摘要翻译: 一种用于确定参考图像与图案的另一图像之间的差异的方法,所述方法包括确定参考成像功能; 确定代表参考成像功能和另外的成像功能之间的差异的差分函数的参数; 基于差分函数和确定的参数来计算参考图像和图像的另外图像之间的差。

    SCANNER MODEL REPRESENTATION WITH TRANSMISSION CROSS COEFFICIENTS
    85.
    发明申请
    SCANNER MODEL REPRESENTATION WITH TRANSMISSION CROSS COEFFICIENTS 有权
    具有传输交叉系数的扫描仪模型表示

    公开(公告)号:US20100141925A1

    公开(公告)日:2010-06-10

    申请号:US12608460

    申请日:2009-10-29

    IPC分类号: G03B27/32

    摘要: The present invention relates to a method for simulating aspects of a lithographic process. According to certain aspects, the present invention uses transmission cross coefficients to represent the scanner data and models. According to other aspects, the present invention enables sensitive data regarding various scanner subsystems to be hidden from third party view, while providing data and models useful for accurate lithographic simulation.

    摘要翻译: 本发明涉及一种用于模拟光刻工艺的方面的方法。 根据某些方面,本发明使用传输交叉系数来表示扫描仪数据和模型。 根据其他方面,本发明使得关于各种扫描器子系统的敏感数据能够从第三方视图中隐藏起来,同时提供用于精确光刻模拟的数据和模型。

    Three-dimensional mask model for photolithography simulation
    86.
    发明授权
    Three-dimensional mask model for photolithography simulation 有权
    用于光刻模拟的三维掩模模型

    公开(公告)号:US07703069B1

    公开(公告)日:2010-04-20

    申请号:US11838582

    申请日:2007-08-14

    IPC分类号: G06F17/50

    摘要: A three-dimensional mask model of the invention provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.

    摘要翻译: 本发明的三维掩模模型提供了比薄膜模型具有亚波长特征的光刻掩模的三维效果更逼真的近似。 在一个实施例中,三维掩模模型包括空间域中的一组过滤内核,其被配置为与薄膜传输函数进行卷积以产生近场图像。 在另一个实施例中,三维掩模模型包括频域中的一组校正因子,其被配置为乘以薄膜传输函数的傅立叶变换以产生近场图像。

    LENS HEATING COMPENSATION SYSTEMS AND METHODS
    87.
    发明申请
    LENS HEATING COMPENSATION SYSTEMS AND METHODS 有权
    透镜加热补偿系统及方法

    公开(公告)号:US20090296055A1

    公开(公告)日:2009-12-03

    申请号:US12475071

    申请日:2009-05-29

    申请人: Jun Ye Peng Liu Yu Cao

    发明人: Jun Ye Peng Liu Yu Cao

    IPC分类号: G03B27/52

    摘要: Methods for calibrating a photolithographic system are disclosed. A cold lens contour for a reticle design and at least one hot lens contour for the reticle design are generated from which a process window is defined. Aberrations induced by a lens manipulator are characterized in a manipulator model and the process window is optimized using the manipulator model. Aberrations are characterized by identifying variations in critical dimensions caused by lens manipulation for a plurality of manipulator settings and by modeling behavior of the manipulator as a relationship between manipulator settings and aberrations. The process window may be optimized by minimizing a cost function for a set of critical locations.

    摘要翻译: 公开了用于校准光刻系统的方法。 生成用于掩模版设计的冷透镜轮廓和用于掩模版设计的至少一个热透镜轮廓,由此定义处理窗口。 由透镜操纵器诱导的畸变在机械手模型中表征,并且使用机械手模型优化过程窗口。 像差的特征在于识别由多个操纵器设置的透镜操纵引起的关键尺寸的变化,以及通过将操纵器的行为建模为机械手设置和像差之间的关系。 可以通过最小化一组关键位置的成本函数来优化过程窗口。

    System and method for lithography simulation
    88.
    发明授权
    System and method for lithography simulation 有权
    光刻模拟系统和方法

    公开(公告)号:US07003758B2

    公开(公告)日:2006-02-21

    申请号:US10815573

    申请日:2004-04-01

    摘要: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques. In this regard, in one embodiment, the present invention employs a lithography simulation system architecture, including application-specific hardware accelerators, and a processing technique to accelerate and facilitate verification, characterization and/or inspection of a mask design, for example, RET design, including detailed simulation and characterization of the entire lithography process to verify that the design achieves and/or provides the desired results on final wafer pattern. The system includes: (1) general purpose-type computing device(s) to perform the case-based logic having branches and inter-dependency in the data handling and (2) accelerator subsystems to perform a majority of the computation intensive tasks.

    摘要翻译: 这里描述和说明了许多发明。 在一个方面,本发明涉及用于模拟,验证,检查,表征,确定和/或评估光刻设计,技术和/或系统的技术和系统,和/或由其执行的各个功能或使用的组件 其中。 在一个实施例中,本发明是加速光刻特性和/或性质的光刻模拟,检查,表征和/或评估以及光刻系统和处理技术的效果和/或相互作用的系统和方法。 在这方面,在一个实施例中,本发明采用光刻仿真系统架构,包括特定于应用的硬件加速器,以及用于加速和促进掩模设计的验证,表征和/或检验的处理技术,例如RET设计 ,包括对整个光刻工艺进行详细的仿真和表征,以验证设计在最终的晶片图案上实现和/或提供期望的结果。 该系统包括:(1)通用目的型计算设备,用于执行在数据处理中具有分支和相互依赖性的基于案例的逻辑,以及(2)加速器子系统执行大部分计算密集型任务。

    Optical amplifier systems with transient control
    90.
    发明授权
    Optical amplifier systems with transient control 有权
    具有瞬态控制的光放大器系统

    公开(公告)号:US06476961B1

    公开(公告)日:2002-11-05

    申请号:US09878224

    申请日:2001-06-12

    申请人: Jun Ye Yen-Wen Lu Yu Cao

    发明人: Jun Ye Yen-Wen Lu Yu Cao

    IPC分类号: H01S300

    摘要: Optical amplifier equipment for operation in fiber-optic communications networks is provided. The optical amplifier equipment may include one or more gain, stages based on rare-earth-doped fiber or Raman-pumped fiber. The gain stages may be optically pumped using diode lasers. Optical monitors may be used to measure optical signals in the optical amplifier equipment. Input signals and output signals may be measured. A control unit may adjust the pump powers in the gain stages based on the measured optical signals to suppress gain transients. An optical delay line may be used to provide additional time for the control unit to process the optical signals before adjusting the pump powers. A midstage module including dispersion-compensating fiber may be installed in the optical amplifier equipment. The control unit may automatically detect the amount of optical delay associated with the installed module and may control the pump powers accordingly during transient control operations.

    摘要翻译: 提供光纤通信网络中的光放大器设备。 光放大器设备可以包括基于稀土掺杂光纤或拉曼泵浦光纤的一个或多个增益级。 增益级可以使用二极管激光器进行光泵浦。 光学监视器可用于测量光放大器设备中的光信号。 可以测量输入信号和输出信号。 控制单元可以基于所测量的光信号来调节增益级中的泵浦功率,以抑制增益瞬变。 可以使用光学延迟线来在调节泵功率之前为控制单元提供额外的时间来处理光信号。 包括色散补偿光纤的中级模块可以安装在光放大器设备中。 控制单元可以自动检测与安装的模块相关联的光学延迟量,并且可以在瞬态控制操作期间相应地控制泵浦功率。