公开(公告)号：US20050078953A1

公开(公告)日：2005-04-14

申请号：US10684054

申请日：2003-10-10

申请人： Mark Fodor ,  Sophia Velastegui ,  Soovo Sen ,  Visweswaren Sivaramakrishnan ,  Peter Lee ,  Mario Silvetti

发明人： Mark Fodor ,  Sophia Velastegui ,  Soovo Sen ,  Visweswaren Sivaramakrishnan ,  Peter Lee ,  Mario Silvetti

IPC分类号： C23C16/458 ,  C23C16/46 ,  H01L21/687 ,  F26B3/30 ,  F26B19/00 ,  H01L21/20

CPC分类号： C23C16/4585 ,  C23C16/46 ,  H01L21/68735

摘要： A substrate heater assembly for supporting a substrate of a predetermined standardized diameter during processing is provided. In one embodiment, the substrate heater assembly includes a body having an upper surface, a lower surface and an embedded heating element. A substrate support surface is formed in the upper surface of the body and defines a portion of a substrate receiving pocket. An annular wall is oriented perpendicular to the upper surface and has a length of at least one half a thickness of the substrate. The wall bounds an outer perimeter of the substrate receiving pocket and has a diameter less than about 0.5 mm greater than the predetermined substrate diameter.

摘要翻译： 提供了一种用于在处理期间支撑预定标准直径的基板的基板加热器组件。 在一个实施例中，基板加热器组件包括具有上表面，下表面和嵌入式加热元件的主体。 衬底支撑表面形成在主体的上表面中并且限定衬底接收袋的一部分。 环形壁垂直于上表面定向并且具有衬底的至少一半厚度的长度。 该壁限定了基板接收槽的外周边，并具有小于预定基板直径的直径小于约0.5mm的直径。

公开(公告)号：US6009827A

公开(公告)日：2000-01-04

申请号：US740969

申请日：1996-11-05

申请人： Stuardo Robles ,  Visweswaren Sivaramakrishnan ,  Maria Galiano ,  Victoria Kithcart

发明人： Stuardo Robles ,  Visweswaren Sivaramakrishnan ,  Maria Galiano ,  Victoria Kithcart

IPC分类号： H01L21/31 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  H01L21/316 ,  H05H1/00 ,  C23C16/00

CPC分类号： C23C16/45561 ,  C23C16/402 ,  C23C16/45557 ,  C23C16/52 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612

摘要： A method and apparatus for ramping down the deposition pressure in a SACVD process. The present invention also provides a method and apparatus for subsequently ramping up the pressure for a PECVD process in such a manner as to prevent unwanted reactions which could form a weak interlayer interface. In particular, the deposition pressure in the SACVD process is ramped down by stopping the flow of the silicon containing gas (preferably TEOS) and/or the carrier gas (preferably helium), while diluting the flow of ozone with oxygen. A ramp down of the pressure starts at the same time. The diluting of the ozone with oxygen limits reactions with undesired reactants at the end of a process.

摘要翻译： 一种用于在SACVD工艺中降低沉积压力的方法和装置。 本发明还提供一种随后使PECVD工艺的压力升高的方法和装置，以防止可能形成弱层间界面的不希望的反应。 特别地，SACVD工艺中的沉积压力通过停止含硅气体（优选TEOS）和/或载气（优选氦气）的流动，同时用氧气稀释臭氧流而降低。 压力的下降开始于同一时间。 用氧气稀释臭氧会在过程结束时限制与不需要的反应物的反应。

公开(公告)号：US5725675A

公开(公告)日：1998-03-10

申请号：US632877

申请日：1996-04-16

申请人： Gary L. Fong ,  Vincente Lim ,  Visweswaren Sivaramakrishnan

发明人： Gary L. Fong ,  Vincente Lim ,  Visweswaren Sivaramakrishnan

IPC分类号： C23C16/455 ,  H01J37/32 ,  C23C16/00

CPC分类号： H01J37/321 ,  C23C16/455 ,  H01J37/3244

摘要： A method and apparatus is provided to prevent energy transfer to a gas which is flown through a gas line disposed between a biased member and grounded member. In one aspect of the invention, a semi-conductive sleeve, such as a silicon carbide sleeve, is provided which is disposed about a gas line and is in contact with the gas inlet manifold and the gas outlet manifold and has a resistance less than that of the gas which is flown through the gas line.

摘要翻译： 提供了一种方法和装置，以防止能量传递到流过设置在偏置构件和接地构件之间的气体管线的气体。 在本发明的一个方面中，提供半导电套筒，例如碳化硅套筒，其设置在气体管线周围并且与气体入口歧管和气体出口歧管接触并且具有小于该阻力的电阻 的气体流过气体管线。

公开(公告)号：US5648175A

公开(公告)日：1997-07-15

申请号：US601558

申请日：1996-02-14

申请人： Kathleen Russell ,  Stuardo Robles ,  Bang C. Nguyen ,  Visweswaren Sivaramakrishnan

发明人： Kathleen Russell ,  Stuardo Robles ,  Bang C. Nguyen ,  Visweswaren Sivaramakrishnan

IPC分类号： H01L21/31 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  C23C16/54 ,  H01L21/316 ,  B32B9/00 ,  B05C11/00

CPC分类号： C23C16/45512 ,  C23C16/401 ,  C23C16/509 ,  C23C16/54 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31604 ,  H01L21/31625

摘要： A method of and apparatus for depositing a silicon oxide layer onto a wafer or substrate is provided. The present method includes introducing into a processing chamber a process gas including silicon, oxygen, boron, phosphorus and germanium to form a germanium doped BPSG oxide layer having a reflow temperature of less than 800.degree. C. Preferred embodiments of the present method are performed in either a subatmospheric CVD or a plasma enhanced CVD processing apparatus.

摘要翻译： 提供了一种将氧化硅层沉积到晶片或衬底上的方法和装置。 本方法包括向处理室中引入包括硅，氧，硼，磷和锗的工艺气体，以形成具有小于800℃的回流温度的锗掺杂的BPSG氧化物层。本方法的优选实施方案在 低压CVD或等离子体增强CVD处理装置。