公开(公告)号：US20070249150A1

公开(公告)日：2007-10-25

申请号：US11669639

申请日：2007-01-31

申请人： Jang-Soo Kim ,  Sang-Gab Kim

发明人： Jang-Soo Kim ,  Sang-Gab Kim

IPC分类号： H01L21/44

CPC分类号： H01L27/1288 ,  H01L27/1214

摘要： In a method of forming a metal line and a method of manufacturing a display substrate, a channel layer and a metal layer are successively formed on a base substrate. A photoresist pattern is formed in a wiring area. The metal layer is etched by using the photoresist pattern to form a metal line. The photoresist pattern is removed by a predetermined thickness to form a residual photoresist pattern on the metal line. The channel layer is etched by using the metal line to form an undercut under the metal line. The protruding portion of the metal line is removed by using the residual photoresist pattern. The protruding portion relatively protrudes by formation of the undercut. Thus, an aperture ratio is increased, an afterimage is prevented, and the display quality is improved.

公开(公告)号：US20070249096A1

公开(公告)日：2007-10-25

申请号：US11669551

申请日：2007-01-31

申请人： Jang-Soo Kim ,  Sang-Gab Kim

发明人： Jang-Soo Kim ,  Sang-Gab Kim

IPC分类号： H01L21/00

CPC分类号： H01L27/1288 ,  H01L27/1214

摘要： In a method of forming a metal line and a method of manufacturing a display substrate, a channel layer and a metal layer are successively formed on a base substrate. A photoresist pattern is formed in a wiring area. The metal layer is etched by using the photoresist pattern to form a metal line. The photoresist pattern is removed by a predetermined thickness to form a residual photoresist pattern on the metal line. The channel layer is etched by using the metal line to form an undercut under the metal line. The protruding portion of the metal line is removed by using the residual photoresist pattern. The protruding portion relatively protrudes by formation of the undercut. Thus, an aperture ratio is increased, an afterimage is prevented, and the display quality is improved.

公开(公告)号：US07061015B2

公开(公告)日：2006-06-13

申请号：US10466299

申请日：2002-10-08

申请人： Bo Sung Kim ,  Kwan-Wook Jung ,  Wan-Shick Hong ,  Sang-Gab Kim ,  Mun-Pyo Hong

发明人： Bo Sung Kim ,  Kwan-Wook Jung ,  Wan-Shick Hong ,  Sang-Gab Kim ,  Mun-Pyo Hong

IPC分类号： H01L29/04

CPC分类号： G02F1/13458 ,  G02F1/136227 ,  G02F1/136286 ,  H01L21/76802 ,  H01L21/76804 ,  H01L23/53295 ,  H01L27/12 ,  H01L27/1244 ,  H01L27/1248 ,  H01L2924/0002 ,  H01L2924/00

摘要： A gate wire is formed on a substrate. Next, after forming a gate insulating film, a semiconductor layer and an ohmic contact layer subsequently are formed thereon. Next, a data wire is formed. Next, a passivation layer and an organic insulating film are deposited, and patterned to form contact holes for exposing the drain electrode, the gate pad and the data pad, respectively. Here, the organic insulating film around the contact holes is formed thinner than that in the other portions. Next, the organic insulating film around the contact holes is removed by an ashing process to expose the borderline of the passivation layer in the contact holes, thereby removing an under-cut. Then, a pixel electrode, an assistant gate pad and an assistant data pad respectively connected to the drain electrode, the gate pad and the data pad are formed.

摘要翻译： 在基板上形成栅极线。 接下来，在形成栅极绝缘膜之后，随后形成半导体层和欧姆接触层。 接下来，形成数据线。 接下来，沉积钝化层和有机绝缘膜，并图案化以形成用于分别暴露漏电极，栅极焊盘和数据焊盘的接触孔。 这里，接触孔周围的有机绝缘膜的厚度比其他部分薄。 接下来，通过灰化处理去除接触孔周围的有机绝缘膜，以暴露接触孔中的钝化层的边界线，从而去除下切。 然后，形成分别连接到漏电极，栅极焊盘和数据焊盘的像素电极，辅助栅极焊盘和辅助数据焊盘。

公开(公告)号：US20050242714A1

公开(公告)日：2005-11-03

申请号：US10517936

申请日：2002-12-24

申请人： Jin-Koo Chung ,  Beom-Rak Choi ,  Joon-Hoo Choi ,  Sang-Gab Kim ,  Hee-Hwan Choe

发明人： Jin-Koo Chung ,  Beom-Rak Choi ,  Joon-Hoo Choi ,  Sang-Gab Kim ,  Hee-Hwan Choe

IPC分类号： H05B33/22 ,  H01L21/316 ,  H01L27/32 ,  H01L51/50 ,  H05B33/00 ,  H05B33/10 ,  H05B33/12 ,  H01J1/62 ,  H01J63/04

CPC分类号： H01L27/3246 ,  H01L21/31633 ,  H01L27/3283 ,  H01L51/5206

摘要： Disclosed is an organic electroluminescent (EL) device for enhancing the luminous efficiency. A first electrode is formed on a substrate. A CVD insulating film of low dielectric constant having an opening exposing the first electrode is formed on the first electrode and the substrate. An organic EL layer and a second electrode are sequentially stacked on the opening. A wall surrounding a region of the organic EL layer is formed of the CVD insulating film of low dielectric constant, the surface treatment of the pixel electrode can be performed using O2 plasma to thereby enhance luminance properties.

摘要翻译： 公开了一种用于提高发光效率的有机电致发光（EL）装置。 在基板上形成第一电极。 在第一电极和基板上形成具有露出第一电极的开口的低介电常数的CVD绝缘膜。 有机EL层和第二电极依次堆叠在开口上。 围绕有机EL层的区域的壁由低介电常数的CVD绝缘膜形成，可以使用O 2等离子体进行像素电极的表面处理，从而提高亮度特性。

公开(公告)号：US20050173732A1

公开(公告)日：2005-08-11

申请号：US10501597

申请日：2002-07-29

申请人： Seung-Hee Yu ,  Mun-Pyo Hong ,  Soo-Guy Rho ,  Nam-Seok Rho ,  Keun-Kyu Song ,  Hee-Hwan Choe ,  Bo-Sung Kim ,  Sang-Gab Kim ,  Sung-Chul Kang ,  Hong-Sick Park

发明人： Seung-Hee Yu ,  Mun-Pyo Hong ,  Soo-Guy Rho ,  Nam-Seok Rho ,  Keun-Kyu Song ,  Hee-Hwan Choe ,  Bo-Sung Kim ,  Sang-Gab Kim ,  Sung-Chul Kang ,  Hong-Sick Park

IPC分类号： G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  H01L21/28 ,  H01L21/3205 ,  H01L23/52 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786 ,  H01L27/10

CPC分类号： G02F1/136286 ,  G02F2001/136295

摘要： First, a Cr film and a CrOx film are deposited and patterned using an etchant including 8-12% Ce(NH4)2(NO3)6, 10-20% NH3 and remaining ultra pure water to form a gate wire including a plurality of gate lines, a plurality of gate electrodes and a plurality of gate pads. Next, a gate insulating film, a semiconductor layer and an ohmic contact layer are formed in sequence. A Cr film and CrOx film are deposited in sequence and patterned using an etchant including 8-12% Ce(N114)2(NO3)6, 10-20% NH3 and remaining ultra pure water to form a data wire including a plurality of data lines, a plurality of source electrodes, a plurality of drain electrodes and a plurality of data pads. A passivation layer is deposited and pattered to form a plurality of contact holes respectively exposing the drain electrodes, the gate pads and the data pads. A transparent conductive material or a reflective conductive material is deposited and patterned to form a plurality of pixel electrodes, a plurality of subsidiary gate pads and a plurality of subsidiary data pads electrically connected to the drain electrodes, the gate pads and the data pads, respectively. The gate lines and the data lines with low reflectance are used as a light-blocking film for blocking the light leakage between the pixel areas, and do not increase the black brightness. Accordingly, a separate black matrix need not be provided on the color filter panel, thereby securing both aperture ration of the pixel and high contrast ratio.

摘要翻译： 首先，使用包括8-12％Ce（NH 4）2（NO 3）6的蚀刻剂沉积和图案化Cr膜和CrOx膜， SUB，10-20％NH 3和剩余的超纯水，以形成包括多个栅极线，多个栅电极和多个栅极焊盘的栅极线。 接下来，依次形成栅极绝缘膜，半导体层和欧姆接触层。 依次沉积Cr膜和CrOx膜，并使用包括8-12％Ce（N11 4）2（NO 3）3的蚀刻剂进行图案化， ）6N，10-20％NH 3和剩余的超纯水，以形成数据线，其包括多条数据线，多个源电极，多个漏极 电极和多个数据焊盘。 钝化层被沉积并图案化以形成分别暴露漏电极，栅极焊盘和数据焊盘的多个接触孔。 沉积透明导电材料或反射导电材料以形成多个像素电极，分别与漏电极，栅极焊盘和数据焊盘电连接的多个辅助栅极焊盘和多个辅助数据焊盘 。 栅极线和低反射率的数据线被用作阻挡像素区域之间的漏光的遮光膜，并且不增加黑色亮度。 因此，不需要在滤色器面板上设置单独的黑矩阵，从而确保像素的孔径比和高对比度。

公开(公告)号：US20050062431A1

公开(公告)日：2005-03-24

申请号：US10931974

申请日：2004-09-02

申请人： Hee-Hwan Choe ,  Sung-Chul Kang ,  Sang-Gab Kim

发明人： Hee-Hwan Choe ,  Sung-Chul Kang ,  Sang-Gab Kim

IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/3065 ,  H01J7/24

CPC分类号： H01J37/3244

摘要： A plasma etcher is provided, which includes: a chamber; top and bottom plasma electrodes provided top and bottom positions of the chamber; a gas injection pipe connected to the chamber; a plurality of diffusion plates provided between the top plasma electrode and the gate injection pipe; and a power generator supplying a plasma voltage to the top and bottom electrodes, wherein the top plasma electrode has a plurality of primary injection holes and the diffusion plates have a plurality of secondary injection holes.

摘要翻译： 提供等离子体蚀刻机，其包括：室; 顶部和底部等离子体电极提供腔室的顶部和底部位置; 连接到所述室的气体注入管; 设置在顶部等离子体电极和栅极注入管之间的多个扩散板; 以及向顶部和底部电极提供等离子体电压的发电机，其中顶部等离子体电极具有多个初级注入孔，扩散板具有多个二次注入孔。

公开(公告)号：US08284338B2

公开(公告)日：2012-10-09

申请号：US13239759

申请日：2011-09-22

申请人： Chong-Chul Chai ,  Shi-Yul Kim ,  Sang-Gab Kim ,  Jun-Hyung Souk ,  Sang-Woo Whangbo ,  Won-Kie Chang ,  Hi-Kuk Lee ,  Soo-Wan Yoon ,  Soo-Jin Kim

发明人： Chong-Chul Chai ,  Shi-Yul Kim ,  Sang-Gab Kim ,  Jun-Hyung Souk ,  Sang-Woo Whangbo ,  Won-Kie Chang ,  Hi-Kuk Lee ,  Soo-Wan Yoon ,  Soo-Jin Kim

IPC分类号： G02F1/1343 ,  G02F1/13

CPC分类号： G02F1/136213 ,  G02F1/13458 ,  G02F2001/136236 ,  H01L2924/0002 ,  H01L2924/00

摘要： A mask is provided. The mask includes a mask body, a first exposing part and a second exposing part. The first exposing part is on the mask body. The first exposing part includes a first light transmitting portion and second light transmitting portions. The first light transmitting portion exposes a portion of the photoresist film corresponding to the output terminal to a light of a first light amount. The second light transmitting portions exposes an adjacent portion of the photoresist film adjacent to the output terminal to a light of a second light amount smaller than the first light amount. The second exposing part is on the mask body. The second exposing part includes third light transmitting portions for partially exposing the photoresist film corresponding to the storage electrode to a light of a third light amount that is between the first and second light amounts.

摘要翻译： 提供面罩。 面罩包括面罩主体，第一曝光部和第二曝光部。 第一曝光部分在面罩主体上。 第一曝光部分包括第一透光部分和第二透光部分。 第一光透射部分将与输出端子相对应的光致抗蚀剂膜的一部分暴露于第一光量的光。 第二透光部分使邻近输出端子的光致抗蚀剂膜的相邻部分暴露于小于第一光量的第二光量的光。 第二曝光部位在面罩主体上。 第二曝光部分包括用于将对应于存储电极的光致抗蚀剂膜部分地曝光到处于第一和第二光量之间的第三光量的光的第三透光部分。

公开(公告)号：US08040444B2

公开(公告)日：2011-10-18

申请号：US11434487

申请日：2006-05-15

申请人： Chong-Chul Chai ,  Shi-Yul Kim ,  Sang-Gab Kim ,  Jun-Hyung Souk ,  Sang-Woo Whangbo ,  Won-Kie Chang ,  Hi-Kuk Lee ,  Soo-Wan Yoon ,  Soo-Jin Kim

发明人： Chong-Chul Chai ,  Shi-Yul Kim ,  Sang-Gab Kim ,  Jun-Hyung Souk ,  Sang-Woo Whangbo ,  Won-Kie Chang ,  Hi-Kuk Lee ,  Soo-Wan Yoon ,  Soo-Jin Kim

IPC分类号： G02F1/1343 ,  G02F1/136

CPC分类号： G02F1/136213 ,  G02F1/13458 ,  G02F2001/136236 ,  H01L2924/0002 ,  H01L2924/00

摘要： A mask is provided. The mask includes a mask body, a first exposing part and a second exposing part. The first exposing part is on the mask body. The first exposing part includes a first light transmitting portion and second light transmitting portions. The first light transmitting portion exposes a portion of the photoresist film corresponding to the output terminal to a light of a first light amount. The second light transmitting portions exposes an adjacent portion of the photoresist film adjacent to the output terminal to a light of a second light amount smaller than the first light amount. The second exposing part is on the mask body. The second exposing part includes third light transmitting portions for partially exposing the photoresist film corresponding to the storage electrode to a light of a third light amount that is between the first and second light amounts.

摘要翻译： 提供面罩。 面罩包括面罩主体，第一曝光部和第二曝光部。 第一曝光部分在面罩主体上。 第一曝光部分包括第一透光部分和第二透光部分。 第一光透射部分将与输出端子相对应的光致抗蚀剂膜的一部分暴露于第一光量的光。 第二透光部分使邻近输出端子的光致抗蚀剂膜的相邻部分暴露于小于第一光量的第二光量的光。 第二曝光部位在面罩主体上。 第二曝光部分包括用于将对应于存储电极的光致抗蚀剂膜部分地曝光到处于第一和第二光量之间的第三光量的光的第三透光部分。

公开(公告)号：US20100047946A1

公开(公告)日：2010-02-25

申请号：US12609568

申请日：2009-10-30

申请人： Sang-Gab Kim ,  Sung-Chul Kang ,  Ho-Min Kang ,  In-Ho Song ,  Hee-Hwan Choe

发明人： Sang-Gab Kim ,  Sung-Chul Kang ,  Ho-Min Kang ,  In-Ho Song ,  Hee-Hwan Choe

IPC分类号： H01L21/28

CPC分类号： H01L27/1259 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/13629 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1288 ,  H01L27/3262

摘要： A method of manufacturing a thin film array panel is provided, which includes: forming a gate line formed on a substrate; forming a gate insulating layer on the gate line; forming a semiconductor layer on the gate insulating layer; forming an ohmic contact layer on the semiconductor layer; forming a data line and a drain electrode disposed at least on the ohmic contact layer, forming an oxide on the data line; etching the ohmic contact layer using the data line and the drain electrode as an etch mask; and forming a pixel electrode connected to the drain electrode.

摘要翻译： 提供一种制造薄膜阵列面板的方法，其包括：形成在基底上的栅极线; 在栅极线上形成栅极绝缘层; 在所述栅极绝缘层上形成半导体层; 在所述半导体层上形成欧姆接触层; 形成至少设置在所述欧姆接触层上的数据线和漏电极，在所述数据线上形成氧化物; 使用数据线和漏电极作为蚀刻掩模蚀刻欧姆接触层; 以及形成连接到所述漏电极的像素电极。

公开(公告)号：US20080090343A1

公开(公告)日：2008-04-17

申请号：US11752948

申请日：2007-05-24

申请人： In-Ho Song ,  Won Song ,  Sang-Gab Kim

发明人： In-Ho Song ,  Won Song ,  Sang-Gab Kim

IPC分类号： H01L21/336

CPC分类号： H01L27/1288 ,  H01L27/124 ,  H01L29/458

摘要： A method of manufacturing a thin film transistor array panel includes forming a gate line on a substrate; sequentially forming a gate insulating layer, a semiconductor layer, and a conductive layer on the gate line; forming a photosensitive film on the conductive layer; forming a first photosensitive film pattern including a first region and a second region having a lesser thickness than the first region by patterning the photosensitive film; forming a data pattern by etching the conductive layer using the first photosensitive film pattern as a mask; forming a second photosensitive film pattern by ashing the first photosensitive film pattern to partially remove the first photosensitive film; forming a semiconductor pattern by etching the semiconductor layer using the second photosensitive film pattern as a mask; and forming a source and drain electrode by etching the data pattern exposed in the second region of the second photosensitive film pattern.

摘要翻译： 制造薄膜晶体管阵列面板的方法包括在基板上形成栅极线; 在栅极线上依次形成栅绝缘层，半导体层和导电层; 在导电层上形成感光膜; 通过图案化所述感光膜，形成包括具有比所述第一区域更薄的厚度的第一区域和第二区域的第一感光膜图案; 通过使用第一感光膜图案作为掩模蚀刻导电层来形成数据图案; 通过灰化所述第一感光膜图案以部分地除去所述第一感光膜来形成第二感光膜图案; 通过使用第二感光膜图案作为掩模蚀刻半导体层来形成半导体图案; 以及通过蚀刻在第二感光膜图案的第二区域中暴露的数据图案来形成源电极和漏电极。