公开(公告)号：US08853788B2

公开(公告)日：2014-10-07

申请号：US14058774

申请日：2013-10-21

Applicant: International Business Machines Corporation

Inventor： Dechao Guo ,  Shu-Jen Han ,  Keith Kwong Hon Wong ,  Jun Yuan

IPC: H01L21/70 ,  H01L29/66 ,  H01L29/78 ,  H01L29/49 ,  H01L29/423 ,  H01L21/8238 ,  H01L29/165 ,  H01L29/417 ,  H01L29/51

CPC classification number: H01L29/42364 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/165 ,  H01L29/41775 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7843 ,  H01L29/7848

Abstract: In a replacement gate scheme, a continuous material layer is deposited on a bottom surface and a sidewall surface in a gate cavity. A vertical portion of the continuous material layer is removed to form a gate component of which a vertical portion does not extend to a top of the gate cavity. The gate component can be employed as a gate dielectric or a work function material portion to form a gate structure that enhances performance of a replacement gate field effect transistor.

Abstract translation: 在替代栅极方案中，连续材料层沉积在栅极腔中的底表面和侧壁表面上。 去除连续材料层的垂直部分以形成垂直部分不延伸到栅极腔的顶部的栅极部件。 栅极元件可以用作栅极电介质或功函数材料部分，以形成增强替代栅极场效应晶体管性能的栅极结构。

公开(公告)号：US20140162375A1

公开(公告)日：2014-06-12

申请号：US13970637

申请日：2013-08-20

Applicant: International Business Machines Corporation

Inventor： Ali Afzali-Ardakani ,  Shu-Jen Han

IPC: G01N33/543

CPC classification number: G01N27/4146 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y40/00 ,  G01N33/5438 ,  G01N33/551 ,  H01L51/0045 ,  H01L51/0048 ,  H01L51/0067 ,  H01L51/0072 ,  H01L51/0558

Abstract: Sensors, processes for manufacturing the sensors, and processes of detecting a target molecule with the sensor generally includes a substrate including a channel and first and second electrodes electrically connected to the channel, wherein the channel includes a monolayer of surface functionalized graphene or surface functionalized carbon nanotubes, wherein the surface functionalized graphene or surface functionalized carbon nanotubes include an imidazolidone compound.

公开(公告)号：US20140154851A1

公开(公告)日：2014-06-05

申请号：US13971165

申请日：2013-08-20

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Dechao Guo ,  Shu-Jen Han ,  Fei Liu ,  Keith Kwong Hon Wong ,  Jun Yuan

IPC: H01L29/66

CPC classification number: H01L29/66666 ,  B82Y10/00 ,  B82Y40/00 ,  H01H1/0094 ,  Y10S977/742 ,  Y10S977/842 ,  Y10S977/938

Abstract: Methods for making non-volatile switches include depositing gate material in a recess of a substrate; depositing drain metal in a recess of the gate material; planarizing the gate material, drain metal, and substrate; forming sidewalls by depositing material on the substrate around the gate material; forming a flexible conductive element between the sidewalls to establish a gap between the flexible conductive element and the gate material, such that the gap separating the flexible conductive element and the gate material is sized to create a negative threshold voltage at the gate material for opening a circuit; and forming a source terminal in electrical contact with the flexible conductive element.

Abstract translation: 制造非易失性开关的方法包括将栅极材料沉积在衬底的凹槽中; 将漏极金属沉积在栅极材料的凹槽中; 平面化栅极材料，漏极金属和衬底; 通过在所述栅极材料周围的衬底上沉积材料来形成侧壁; 在所述侧壁之间形成柔性导电元件以在所述柔性导电元件和所述栅极材料之间建立间隙，使得将所述柔性导电元件和所述栅极材料分开的所述间隙的尺寸设计成在所述栅极材料处产生负阈值电压以打开 电路 以及形成与所述柔性导电元件电接触的源极端子。

公开(公告)号：US08741700B1

公开(公告)日：2014-06-03

申请号：US13971165

申请日：2013-08-20

Applicant: International Business Machines Corporation

Inventor： Dechao Guo ,  Shu-Jen Han ,  Fei Liu ,  Keith Kwong Hon Wong ,  Jun Yuan

IPC: H01L21/20

CPC classification number: H01L29/66666 ,  B82Y10/00 ,  B82Y40/00 ,  H01H1/0094 ,  Y10S977/742 ,  Y10S977/842 ,  Y10S977/938

Abstract: Methods for making non-volatile switches include depositing gate material in a recess of a substrate; depositing drain metal in a recess of the gate material; planarizing the gate material, drain metal, and substrate; forming sidewalls by depositing material on the substrate around the gate material; forming a flexible conductive element between the sidewalls to establish a gap between the flexible conductive element and the gate material, such that the gap separating the flexible conductive element and the gate material is sized to create a negative threshold voltage at the gate material for opening a circuit; and forming a source terminal in electrical contact with the flexible conductive element.

Abstract translation: 制造非易失性开关的方法包括将栅极材料沉积在衬底的凹槽中; 将漏极金属沉积在栅极材料的凹槽中; 平面化栅极材料，漏极金属和衬底; 通过在所述栅极材料周围的衬底上沉积材料来形成侧壁; 在所述侧壁之间形成柔性导电元件以在所述柔性导电元件和所述栅极材料之间建立间隙，使得将所述柔性导电元件和所述栅极材料分隔开的所述间隙的尺寸设定成在所述栅极材料处产生负阈值电压以打开 电路 以及形成与所述柔性导电元件电接触的源极端子。

公开(公告)号：US20140042561A1

公开(公告)日：2014-02-13

申请号：US14058774

申请日：2013-10-21

Applicant: International Business Machines Corporation

Inventor： Dechao Guo ,  Shu-Jen Han ,  Keith Kwong Hon Wong ,  Jun Yuan

IPC: H01L29/423 ,  H01L29/417

CPC classification number: H01L29/42364 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/165 ,  H01L29/41775 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7843 ,  H01L29/7848

Abstract: In a replacement gate scheme, a continuous material layer is deposited on a bottom surface and a sidewall surface in a gate cavity. A vertical portion of the continuous material layer is removed to form a gate component of which a vertical portion does not extend to a top of the gate cavity. The gate component can be employed as a gate dielectric or a work function material portion to form a gate structure that enhances performance of a replacement gate field effect transistor.

Abstract translation: 在替代栅极方案中，连续材料层沉积在栅极腔中的底表面和侧壁表面上。 去除连续材料层的垂直部分以形成垂直部分不延伸到栅极腔的顶部的栅极部件。 栅极元件可以用作栅极电介质或功函数材料部分，以形成增强替代栅极场效应晶体管性能的栅极结构。

公开(公告)号：US08624223B2

公开(公告)日：2014-01-07

申请号：US13668401

申请日：2012-11-05

Applicant: International Business Machines Corporation

Inventor： Ching-tzu Chen ,  Shu-Jen Han

IPC: H01L29/06 ,  H01L31/00

CPC classification number: H01L29/78 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/0673 ,  H01L29/1033 ,  H01L29/1606 ,  H01L29/42384 ,  H01L29/66431 ,  H01L29/66439 ,  H01L29/66477 ,  H01L29/775 ,  H01L29/7781 ,  H01L29/785 ,  H01L29/7855 ,  H01L29/78645 ,  H01L29/78648

Abstract: A graphene-based electrically tunable nanoconstriction device and a non-transitory tangible computer readable medium encoded with a program for fabricating the device that includes a back-gate dielectric layer over a conductive substrate are described. The back-gate dielectric layer may be hexagonal boron nitride, mica, SiOx, SiNx, BNx, HfOx or AlOx. A graphene layer is an AB-stacked bi-layer graphene layer, an ABC-stacked tri-layer graphene layer or a stacked few-layer graphene layer. Contacts formed over a portion of the graphene layer include at least one source contact, at least one drain contact and at least one set of side-gate contacts. A graphene channel with graphene side gates is formed in the graphene layer between at least one source contact, at least one the drain contact and at least one set of side-gate contacts. A top-gate dielectric layer is formed over the graphene layer. A top-gate electrode is formed on the top-gate dielectric layer.

Abstract translation: 描述了基于石墨烯的电可调谐纳射收收装置和编码有用于制造该装置的程序的非暂时有形计算机可读介质，该装置包括导电基板上的背栅介质层。 背栅电介质层可以是六方氮化硼，云母，SiOx，SiNx，BNx，HfOx或AlOx。 石墨烯层是AB层叠的双层石墨烯层，ABC层叠的三层石墨烯层或层叠的几层石墨烯层。 形成在石墨烯层的一部分上的接触层包括至少一个源极接触，至少一个漏极接触和至少一组侧栅接触。 具有石墨烯侧栅极的石墨烯通道在至少一个源极接触件，至少一个漏极接触件和至少一个侧面接触件组之间的石墨烯层中形成。 在石墨烯层上形成顶栅电介质层。 顶栅电极形成在顶栅电介质层上。

公开(公告)号：US11024750B2

公开(公告)日：2021-06-01

申请号：US16571940

申请日：2019-09-16

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Zhihong Chen ,  Shu-Jen Han ,  Siyuranga O. Koswatta ,  Alberto Valdes Garcia

IPC: H01L29/93 ,  B82Y10/00 ,  H01L49/02 ,  H01L29/66 ,  H01L29/16 ,  B82Y40/00

Abstract: A plate varactor includes a dielectric substrate and a first electrode embedded in a surface of the substrate. A capacitor dielectric layer is disposed over the first electrode, and a layer of graphene is formed over the dielectric layer to contribute a quantum capacitance component to the dielectric layer. An upper electrode is formed on the layer of graphene. Other embodiments and methods for fabrication are also included.

公开(公告)号：US10966621B2

公开(公告)日：2021-04-06

申请号：US15616985

申请日：2017-06-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Shu-Jen Han

IPC: A61B5/04 ,  A61B5/0478 ,  A61B5/00 ,  A61B5/145

Abstract: Embodiments include microelectrodes including a flexible shank and a bioabsorbable material surrounding the flexible shank. The flexible shank can include a flexible substrate, a circuit, and a plurality of sensors. Embodiments also include a methods of forming flexible active electrode arrays including depositing a flexible polymer on a substrate. The methods also include forming a plurality of sensors on the flexible polymer and attaching a silicon-based chip to the flexible shank. The methods also include coating the flexible shank in a bioabsorbable material and cutting the shank and a portion of the bioabsorbable material from the substrate.

公开(公告)号：US10830647B2

公开(公告)日：2020-11-10

申请号：US16380046

申请日：2019-04-10

Applicant: International Business Machines Corporation

Inventor： Ali Afzali-Ardakani ,  Abram L. Falk ,  Damon B. Farmer ,  Shu-Jen Han ,  George S. Tulevski

IPC: G01J5/00 ,  G01J5/04 ,  G01J5/60 ,  G01J5/08 ,  G01J5/02 ,  G01J5/20

Abstract: A computer-eimplemented thermal imaging device having an optically-sensitive layer that includes a superpixel having at least one pixel. The at least one pixel includes a plasmonic absorber configured to obtain radiance measurements of electromagnetic radiation emitted from an object at a plurality of wavelengths. The device further includes a processor configured to determine an emissivity and temperature for the electromagnetic radiation received at the plasmonic material from the object using the radiance measurements and to form an image of the object from the determined emissivity and temperature.

公开(公告)号：US10768502B2

公开(公告)日：2020-09-08

申请号：US16126213

申请日：2018-09-10

Applicant: International Business Machines Corporation

Inventor： Shu-Jen Han

IPC: G02F1/157 ,  G02F1/1523 ,  G02F1/155 ,  G02F1/163 ,  H01L31/18 ,  H01L31/09 ,  H01L31/102 ,  H01L31/0232 ,  G06N3/067 ,  H01L31/0216 ,  H01L27/142 ,  G02F1/15 ,  G02F1/153

Abstract: A synaptic electronic device includes a substrate including a one or more of a semiconductor and an insulator; a photosensitive layer disposed on a surface of the substrate; an electrochromic stack disposed on the photosensitive layer, the electrochromic stack including a first transparent electrode layer, a cathodic electrochromic layer, a solid electrolyte layer, an anodic electrochromic layer, and a second transparent electrode layer; and a pair of electrodes disposed on the photosensitive layer and on opposing sides of the electrochromic stack.