公开(公告)号：US20050135018A1

公开(公告)日：2005-06-23

申请号：US11061513

申请日：2005-02-22

申请人： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

发明人： Katsuhiko Koui ,  Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Masashi Sahashi ,  Takeo Sakakubo ,  Hitoshi Iwasaki

IPC分类号： G11B5/39 ,  H01F10/32 ,  H01L43/08 ,  G11B5/33 ,  G11B5/127

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3268 ,  H01L27/224 ,  H01L27/228

摘要： A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a magnetically free layer whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic intermediate layer located between the pinned layer and the free layer; and a pair of electrodes electrically connected to said magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film. The intermediate layer has a first layer including a first region whose resistance is relatively high and second regions whose resistance is relatively low. The sense current preferentially flows through the second regions when the current passes the first layer. Alternatively, the concentration of oxygen in the first layer may have a two-dimensional fluctuation, and a first region where the concentration of oxygen is equal to or higher than 40 atomic % and a second region where the concentration of oxygen is equal to or lower than 35 atomic % may be provided in the first layer.

公开(公告)号：US06905780B2

公开(公告)日：2005-06-14

申请号：US10060247

申请日：2002-02-01

申请人： Hiromi Yuasa ,  Masatoshi Yoshikawa ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Masashi Sahashi

发明人： Hiromi Yuasa ,  Masatoshi Yoshikawa ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Masashi Sahashi

IPC分类号： G11B5/012 ,  G11B5/39 ,  H01F10/32 ,  H01L43/10 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/012 ,  G11B5/3903 ,  G11B5/3906 ,  G11C11/16 ,  H01F10/324 ,  H01F10/3268 ,  H01L43/10 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/1143 ,  Y10T428/115 ,  Y10T428/1171 ,  Y10T428/1193 ,  Y10T428/12465 ,  Y10T428/12868 ,  Y10T428/12917 ,  Y10T428/12951 ,  Y10T428/265 ,  Y10T428/32

摘要： A magnetoresistive device includes a magnetization pinned layer, a magnetization free layer, a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer, and electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer. At least one of the magnetization pinned layer and the magnetization free layer is substantially formed of a binary or ternary alloy represented by the formula FeaCobNic (where a+b+c=100 at %, and a≦75 at %, b≦75 at %, and c≦63 at %), or formed of an alloy having a body-centered cubic crystal structure.

摘要翻译： 磁阻装置包括磁化固定层，磁化自由层，形成在磁化固定层和磁化自由层之间的非磁性中间层，以及允许感测电流在基本垂直于堆叠平面的方向上流动的电极，包括 磁化钉扎层，非磁性中间层和无磁化层。 磁化固定层和无磁化层中的至少一个基本上由二元或三元合金形成，由二元或三元合金表示，其由式Fe / SUB>（其中a + b + c = 100at％，a≤75at％，b <= 75at％，c <= 63at％），或者由具有体心立方 晶体结构。

公开(公告)号：US06784509B2

公开(公告)日：2004-08-31

申请号：US10217410

申请日：2002-08-14

申请人： Hiromi Yuasa ,  Yuzo Kamiguchi ,  Masatoshi Yoshikawa ,  Katsuhiko Koui ,  Hitoshi Iwasaki ,  Tomohiko Nagata ,  Takeo Sakakubo ,  Masashi Sahashi

发明人： Hiromi Yuasa ,  Yuzo Kamiguchi ,  Masatoshi Yoshikawa ,  Katsuhiko Koui ,  Hitoshi Iwasaki ,  Tomohiko Nagata ,  Takeo Sakakubo ,  Masashi Sahashi

IPC分类号： H01L2982

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/3227 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10

摘要： In a spin valve type element, an interface insertion layer (32, 34) of a material exhibiting large spin-dependent interface scattering is inserted in a location of a magnetically pinned layer (16) or a magnetically free layer (20) closer to a nonmagnetic intermediate layer (18). A nonmagnetic back layer (36) may be additionally inserted as an interface not in contact with the nonmagnetic intermediate layer to increase the output by making use of spin-dependent interface scattering along the interface between the pinned layer and the nonmagnetic back layer or between the free layer and the nonmagnetic back layer.

摘要翻译： 在自旋阀型元件中，将表现出大的自旋相关界面散射的材料的界面插入层（32,34）插入到更靠近磁性固定层（16）或磁性层（20）的位置 非磁性中间层（18）。 可以另外插入非磁性背层（36）作为不与非磁性中间层接触的界面，以通过利用沿被钉扎层和非磁性背层之间的界面处的自旋相关界面散射来增加输出， 自由层和非磁背层。

公开(公告)号：US06676772B2

公开(公告)日：2004-01-13

申请号：US10098568

申请日：2002-03-18

申请人： Akiko Saito ,  Tadahiko Kobayashi ,  Takao Sawa ,  Masashi Sahashi

发明人： Akiko Saito ,  Tadahiko Kobayashi ,  Takao Sawa ,  Masashi Sahashi

IPC分类号： H01F1055

CPC分类号： H01F1/015 ,  F25B21/00 ,  Y02B30/66

摘要： The magnetic material for magnetic refrigeration of the present invention is characterized by exhibiting, in a certain temperature region, preferably, only in part of a temperature region from 200 K to 350 K, an inflection point at which a second order differential coefficient of a magnetization curve changes from positive to negative with respect to a magnetic field, within the range of this magnetic field formed using a permanent magnet unit. This magnetic material of the present invention can generate a low temperature by using a relatively low magnetic field, by transferring the entropy between the electron spin system and the lattice system near the temperature at which an inflection point appears on the magnetization curve. Examples of the magnetic material meeting this condition are La(Fe,Si)13, (Hf,Ta)Fe2, (Ti,Sc)Fe2, and (Nb,Mo)Fe2, each containing 50 to 60 atomic % of transition metals such as Fe.

摘要翻译： 本发明的磁性制冷用磁性材料的特征在于，在一定的温度范围内优选仅显示200K〜350K的温度区域的一部分，其中磁化强度的二阶微分系数 在使用永久磁铁单元形成的该磁场的范围内，曲线相对于磁场从正向变化为负。 本发明的这种磁性材料可以通过在电磁自旋系统和晶格系统之间传递熵在靠近磁化曲线上出现拐点的温度下，通过使用较低的磁场而产生低温。 满足该条件的磁性材料的实例是La（Fe，Si）13，（Hf，Ta）Fe 2，（Ti，Sc）Fe 2和（Nb，Mo）Fe 2，每个含有50至60原子％的过渡金属 如Fe。

公开(公告)号：US06636399B2

公开(公告)日：2003-10-21

申请号：US09927364

申请日：2001-08-13

申请人： Hitoshi Iwasaki ,  Yuzo Kamiguchi ,  Hiromi Fuke ,  Kazuhiro Saito ,  Masashi Sahashi

发明人： Hitoshi Iwasaki ,  Yuzo Kamiguchi ,  Hiromi Fuke ,  Kazuhiro Saito ,  Masashi Sahashi

IPC分类号： G11B5139

CPC分类号： H01F10/3268 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/09 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996 ,  H01L27/222 ,  H01L43/08

摘要： A magnetoresistance effect device comprises a magnetic multi-layer film having at least an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film, and a second ferromagnetic film formed in the order on the front surface portion of the substrate, the magnetic multi-layer film having giant magnetoresistance effect, at least the second ferromagnetic film having a shape corresponding to a magnetic field detecting portion. The bias magnetic field applying films are disposed on a conductive film of the magnetic multi-layer film at outer portions of both edge portions of the magnetic field detecting portion of the magnetoresistance effective film. Alternatively, the second ferromagnetic film has a first portion corresponding to the magnetic field detecting portion and a second portion corresponding to the outer portions of both the edge portions of the magnetic field detecting portion, the film thickness-of the second portion being smaller than the film thickness of the first portion. The bias magnetic field applying films are formed at the outer portions of both the edge portions of the magnetic field detecting portion of the second ferromagnetic film. With the reversely structured magnetoresistance effect film and the laminate positions of the bias magnetic field applying films, in addition to suppressing the reproduction fringe and Barkhausen noise, the decrease of contact resistance, the suppression of insulation detect, and good linear response characteristic can be accomplished.

公开(公告)号：US06466122B1

公开(公告)日：2002-10-15

申请号：US09716403

申请日：2000-11-21

申请人： Michio Hasegawa ,  Masashi Sahashi

发明人： Michio Hasegawa ,  Masashi Sahashi

IPC分类号： H01F500

CPC分类号： H01F1/15308 ,  H01F17/0013 ,  H01F41/046

摘要： A planar inductor has a spiral coil, insulating layers stacked on both surfaces of the spiral coil, and ferromagnetic layers stacked on the insulating layers, wherein each ferromagnetic layer has a saturation magnetization 4&pgr;Ms of 10 kG or more, and a thickness of 100 &mgr;m or less.

摘要翻译： 平面电感器具有螺旋线圈，堆叠在螺旋线圈的两个表面上的绝缘层和堆叠在绝缘层上的铁磁层，其中每个铁磁层的饱和磁化强度为4piMs为10kG以上，厚度为100μm， 减。

公开(公告)号：US06455178B1

公开(公告)日：2002-09-24

申请号：US09471498

申请日：1999-12-23

申请人： Hiromi Fuke ,  Yuuzo Kamiguchi ,  Susumu Hashimoto ,  Tomomi Funayama ,  Kazuhiro Saito ,  Hitoshi Iwasaki ,  Masashi Sahashi

发明人： Hiromi Fuke ,  Yuuzo Kamiguchi ,  Susumu Hashimoto ,  Tomomi Funayama ,  Kazuhiro Saito ,  Hitoshi Iwasaki ,  Masashi Sahashi

IPC分类号： B32B1504

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/399 ,  H01F10/3218 ,  H01F10/3268 ,  H01L43/10 ,  Y10T428/1121 ,  Y10T428/12861 ,  Y10T428/263

摘要： An exchange coupling film comprises a ferromagnetic film and an antiferromagnetic film laminated on the ferromagnetic film, wherein at least a portion of the antiferromagnetic film has a face-centered cubic crystal structure and the antiferromagnetic film comprises an IrMn alloy represented by the general formula of IrxMn100−x, wherein x stands for a value by atomic % satisfying the expression, 2≦x≦80.

摘要翻译： 交换耦合膜包括层叠在铁磁膜上的铁磁膜和反铁磁膜，其中至少一部分反铁磁膜具有面心立方晶体结构，反铁磁膜包括由通式IrxMn100表示​​的IrMn合金 -x，其中x代表满足表达式2 <= x <= 80的原子％的值。

公开(公告)号：US6038101A

公开(公告)日：2000-03-14

申请号：US041624

申请日：1998-03-13

申请人： Hiroaki Yoda ,  Yuichi Ohsawa ,  Takeo Sakakubo ,  Masashi Sahashi ,  Jun Ito ,  Kazushi Tanimoto

发明人： Hiroaki Yoda ,  Yuichi Ohsawa ,  Takeo Sakakubo ,  Masashi Sahashi ,  Jun Ito ,  Kazushi Tanimoto

IPC分类号： G11B5/60 ,  G11B5/255 ,  G11B5/31 ,  G11B5/39 ,  G11B5/40 ,  G11B21/21

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3106 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996 ,  G11B5/255 ,  G11B5/3133 ,  G11B5/40

摘要： A magnetic head has a recording/reproducing element which is embedded in an insulation layer made of an AlO.sub.x thin film and a leading end of which is positioned at a medium opposed face. A high-hardness coating layer or a high-thermal conductivity coating layer made of diamond-like carbon or the like is disposed on a peripheral region of the medium opposed face, excluding the leading end of the recording/reproducing element and a region in the neighborhood thereof. Even in the case where the magnetic head is applied to a magnetic disk apparatus of contact recording/reproducing system, it is possible to greatly restrain wear of the leading end of the recording/reproducing element and the region in the neighborhood thereof. Further, the heat dissipation characteristic of the leading end of the recording/reproducing element can be improved greatly. The dishing of the leading end of the recording/reproducing element can be reduced to a great extent by so etching the peripheral region of the medium opposed face that the leading end of the recording/reproducing element is projected; forming the high-hardness coating layer on an etched region; and processing the projected region by wear in a final process.

摘要翻译： 磁头具有嵌入在由AlOx薄膜制成的绝缘层中并且其前端位于介质相对面的记录/再现元件。 除了记录/再现元件的前端之外，在介质相对面的外围区域上还设置有由类金刚石碳等制成的高硬度涂层或高导热性涂层， 邻里。 即使在将磁头施加到接触记录/再现系统的磁盘装置的情况下，也可以大大地抑制记录/再现元件的前端和其附近的区域的磨损。 此外，可以大大提高记录/再现元件的前端的散热特性。 通过蚀刻记录/再现元件的前端的介质相对面的周边区域可以很大程度地减小记录/再现元件的前端的凹陷; 在蚀刻区域上形成高硬度涂层; 并在最终过程中通过磨损来处理投影区域。

公开(公告)号：US5999378A

公开(公告)日：1999-12-07

申请号：US980871

申请日：1997-12-01

申请人： Kazuhiro Saito ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Yuzo Kamiguchi ,  Masashi Sahashi ,  Hiroaki Kawashima ,  Taro Oike ,  Koichi Terunuma ,  Haruyuki Morita

发明人： Kazuhiro Saito ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Yuzo Kamiguchi ,  Masashi Sahashi ,  Hiroaki Kawashima ,  Taro Oike ,  Koichi Terunuma ,  Haruyuki Morita

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B2005/3996

摘要： A magnetoresistance effect head comprises a giant magnetoresistance effect film, a pair of leads to supply an electric current to the giant magnetoresistance effect head, and upper and lower magnetic shielding layers made of a crystalline soft magnetic film and disposed to hold the giant magnetoresistance effect film therebetween with a magnetic gap film intervened, wherein the surface roughness of an under layer of the giant magnetoresistance effect film is determined so that a center period L of the surface roughness satisfies L>70 nm.

摘要翻译： 磁阻效应头包括巨磁阻效应膜，一对向巨磁电阻效应头供电的引线，以及由结晶软磁膜制成的上下磁屏蔽层，并设置成保持巨磁阻效应膜 其间插入有磁隙膜，其中确定巨磁阻效应膜的下层的表面粗糙度，使得表面粗糙度的中心周期L满足L> 70nm。

公开(公告)号：US5565830A

公开(公告)日：1996-10-15

申请号：US158813

申请日：1993-11-29

申请人： Masashi Sahashi ,  Tadahiko Kobayashi

发明人： Masashi Sahashi ,  Tadahiko Kobayashi

IPC分类号： C22C19/07 ,  H01F1/00 ,  H01F1/22 ,  H01L41/20 ,  H01F7/00

CPC分类号： C22C19/07 ,  H01F1/22 ,  H01L41/20

摘要： A rare earth-cobalt supermagnetostrictive alloy having a composition represented by the general formula, in atomic fraction: R (Co.sub.1-x Fe.sub.x).sub.x, wherein 0.001.ltoreq.x.ltoreq.0.8, 0.2.ltoreq.z.ltoreq.15, and R is at least one element selected from the group consisting of Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu and is consisting essentially of a cubic system whose easy axis of magnetization is generally or oriented; or R (Co.sub.1-x Fe.sub.x).sub.x, wherein 0.001.ltoreq.x.ltoreq.0.8, 0.2.ltoreq.z.ltoreq.15, and R is at least one element selected from the group consisting of Sc, Y, La, Ce, Pr, Nd, Sm, Gd, Dy, Er, Yb, and Lu. Such an alloy exhibits satisfactory magnetostriction in a wide range of temperatures from room temperature to liquid nitrogen temperature.

摘要翻译： 具有由通式表示的组成的稀土钴超磁致伸缩合金，原子分数为R（Co1-xFex）x，其中0.001≤x≤0.8,0.2≤z= 15，和 R是选自Sc，Y，La，Ce，Pr，Nd，Pm，Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb和Lu中的至少一种元素， 的易磁化轴通常<100>或<110>取向的立方体系; 或R（Co1-xFex）x，其中0.001≤x≤0.8,0.2≤Z≤15，并且R是选自Sc，Y，La，Ce中的至少一种元素 ，Pr，Nd，Sm，Gd，Dy，Er，Yb和Lu。 这种合金在从室温到液氮温度的宽范围的温度范围内表现出令人满意的磁致伸缩。