公开(公告)号：US08420441B2

公开(公告)日：2013-04-16

申请号：US12846585

申请日：2010-07-29

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Hideaki Kuwabara

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Hideaki Kuwabara

IPC分类号： H01L21/00

CPC分类号： H01L27/3262 ,  G06F1/163 ,  H01L21/02614 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869 ,  H01L29/78696 ,  H04B1/16

摘要： One object is to provide a semiconductor device with a structure which enables reduction in parasitic capacitance sufficiently between wirings. In a bottom-gate type thin film transistor including a stacked layer of a first layer which is a metal thin film oxidized partly or entirely and an oxide semiconductor layer, the following oxide insulating layers are formed together: an oxide insulating layer serving as a channel protective layer which is over and in contact with a part of the oxide semiconductor layer overlapping with a gate electrode layer; and an oxide insulating layer which covers a peripheral portion and a side surface of the stacked oxide semiconductor layer.

摘要翻译： 一个目的是提供具有能够在布线之间充分降低寄生电容的结构的半导体器件。 在包括作为部分或全部氧化的金属薄膜的第一层的堆叠层和氧化物半导体层的底栅型薄膜晶体管中，形成以下氧化物绝缘层：作为沟道的氧化物绝缘层 与氧化物半导体层的与栅电极层重叠的部分结合并接触的保护层; 以及覆盖层叠的氧化物半导体层的周边部分和侧面的氧化物绝缘层。

公开(公告)号：US08350261B2

公开(公告)日：2013-01-08

申请号：US12699976

申请日：2010-02-04

申请人： Junichiro Sakata ,  Hiromichi Godo ,  Takashi Shimazu

发明人： Junichiro Sakata ,  Hiromichi Godo ,  Takashi Shimazu

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225

摘要： The object is to suppress deterioration in electrical characteristics in a semiconductor device comprising a transistor including an oxide semiconductor layer. In a transistor in which a channel layer is formed using an oxide semiconductor, a p-type silicon layer is provided in contact with a surface of the oxide semiconductor layer. Further, the p-type silicon layer is provided in contact with at least a region of the oxide semiconductor layer, in which a channel is formed, and a source electrode layer and a drain electrode layer are provided in contact with regions of the oxide semiconductor layer, over which the p-type silicon layer is not provided.

摘要翻译： 本发明的目的是为了抑制含有氧化物半导体层的晶体管的半导体装置的电气特性的劣化。 在其中使用氧化物半导体形成沟道层的晶体管中，提供与氧化物半导体层的表面接触的p型硅层。 此外，p型硅层设置成与至少形成有沟道的氧化物半导体层的区域接触，并且提供与氧化物半导体的区域接触的源电极层和漏电极层 层，不设置p型硅层。

公开(公告)号：US08330156B2

公开(公告)日：2012-12-11

申请号：US12644286

申请日：2009-12-22

申请人： Shunpei Yamazaki ,  Junichiro Sakata

发明人： Shunpei Yamazaki ,  Junichiro Sakata

IPC分类号： H01L29/10

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78696

摘要： In a thin film transistor including an oxide semiconductor, an oxide cluster having higher electrical conductance than the oxide semiconductor layer is formed between the oxide semiconductor layer and a gate insulating layer, whereby field effect mobility of the thin film transistor can be increased and increase of off current can be suppressed.

摘要翻译： 在包括氧化物半导体的薄膜晶体管中，在氧化物半导体层和栅极绝缘层之间形成具有比氧化物半导体层更高导电性的氧化物簇，由此可以增加薄膜晶体管的场效应迁移率并增加 关闭电流可以抑制。

公开(公告)号：US08304300B2

公开(公告)日：2012-11-06

申请号：US12828464

申请日：2010-07-01

申请人： Junichiro Sakata ,  Toshinari Sasaki ,  Miyuki Hosoba

发明人： Junichiro Sakata ,  Toshinari Sasaki ,  Miyuki Hosoba

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L27/1225 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/127 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78654 ,  H01L29/7869 ,  H01L29/78696

摘要： An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.

摘要翻译： 目的在于提供一种利用具有稳定电特性的晶体管稳定工作的显示装置。 在使用其中使用氧化物半导体层作为沟道形成区域的晶体管的显示装置的制造中，栅电极进一步设置在至少施加到驱动电路的晶体管上。 在将氧化物半导体层用于沟道形成区域的晶体管的制造中，对氧化物半导体层进行热处理以脱水或脱氢; 因此，存在于氧化物半导体层和栅极绝缘层之间的界面处的杂质，其存在于氧化物半导体层下方并与氧化物半导体层接触，以及氧化物半导体层与设置在该氧化物半导体层上的与保护绝缘层接触的界面 可以减少氧化物半导体层。

公开(公告)号：US08294147B2

公开(公告)日：2012-10-23

申请号：US12832333

申请日：2010-07-08

申请人： Shunpei Yamazaki ,  Hiroki Ohara ,  Junichiro Sakata ,  Toshinari Sasaki ,  Miyuki Hosoba

发明人： Shunpei Yamazaki ,  Hiroki Ohara ,  Junichiro Sakata ,  Toshinari Sasaki ,  Miyuki Hosoba

IPC分类号： H01L29/786

CPC分类号： H01L27/127 ,  H01L21/477 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1274 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78693

摘要： An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.

摘要翻译： 目的是制造和提供包括具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。 在包括薄膜晶体管的半导体器件的制造方法中，其中包括沟道形成区域的半导体层用作氧化物半导体膜，用于减少诸如湿度的杂质（脱水或脱氢热处理）的热处理在 形成与氧化物半导体层接触的用作保护膜的氧化物绝缘膜。 然后，在漏极电极层，栅极绝缘层和氧化物半导体层中以及在氧化物半导体膜和上下膜之间的界面处不仅在源电极层中存在的诸如水分的杂质 它们与氧化物半导体层接触。

公开(公告)号：US20120261659A1

公开(公告)日：2012-10-18

申请号：US13458615

申请日：2012-04-27

申请人： Hisao Ikeda ,  Junichiro Sakata ,  Daisuke Kumaki ,  Satoshi Seo

发明人： Hisao Ikeda ,  Junichiro Sakata ,  Daisuke Kumaki ,  Satoshi Seo

IPC分类号： H01L33/26

CPC分类号： H01L51/5092 ,  H01L27/3244 ,  H01L51/007 ,  H01L51/0081 ,  H01L51/5052 ,  H01L51/5088 ,  H01L2251/5323

摘要： A light emitting element according to the invention comprises a plurality of layers which is interposed between a pair of electrodes, in which at least one of the plurality of layers is formed of a layer containing a light emitting material, and the layer containing a light emitting material is interposed between a layer containing an oxide semiconductor and/or metal oxide and a material having a higher hole transporting property than an electron transporting property, and a layer containing an oxide semiconductor and/or metal oxide, a material having a higher electron transporting property than a hole transporting property and a material which can donate electrons to the material having a higher electron transporting property than a hole transporting property.

摘要翻译： 根据本发明的发光元件包括介于一对电极之间的多个层，其中多个层中的至少一个由包含发光材料的层形成，并且该层包含发光 材料插入在包含氧化物半导体和/或金属氧化物的层和具有比电子传输性能更高的空穴传输性质的材料之间，以及含有氧化物半导体和/或金属氧化物的层，具有较高电子传输的材料 特性以及可以向具有比空穴传输性更高的电子传输性能的材料提供电子的材料。

公开(公告)号：US08288180B2

公开(公告)日：2012-10-16

申请号：US11455254

申请日：2006-06-16

申请人： Junichiro Sakata

发明人： Junichiro Sakata

IPC分类号： H01L21/00

CPC分类号： H01L51/5088 ,  H01L51/5092 ,  H01L51/56

摘要： An object of the present invention to improve reliability of a light emitting device having a mixed layer including an organic compound and metal oxide without reducing productivity. The above object is solved in such a way that after forming the mixed layer including the organic compound and metal oxide, the mixed layer is exposed to a nitrogen gas atmosphere without being exposed to a gas atmosphere including oxygen, and then a stacked film is formed over the mixed layer without exposing the mixed layer to a gas atmosphere including oxygen.

摘要翻译： 本发明的目的是提高具有包含有机化合物和金属氧化物的混合层的发光装置的可靠性，而不降低生产率。 上述目的被解决为在形成包含有机化合物和金属氧化物的混合层之后，将混合层暴露于氮气气氛中而不暴露于包括氧的气体气氛，然后形成层叠膜 在混合层之上，而不将混合层暴露于包括氧的气体气氛中。

公开(公告)号：US08283862B2

公开(公告)日：2012-10-09

申请号：US12905568

申请日：2010-10-15

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Takashi Hamada ,  Masaharu Nagai ,  Yutaka Matsuda

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Takashi Hamada ,  Masaharu Nagai ,  Yutaka Matsuda

IPC分类号： H05B33/22

CPC分类号： H01L27/3258 ,  H01L21/31608 ,  H01L27/3246 ,  H01L27/3276 ,  H01L51/5206 ,  H01L51/5218 ,  H01L51/5246 ,  H01L51/5281 ,  H01L51/529 ,  H01L2251/5315 ,  H01L2251/5323

摘要： An object of the present invention is to realize a light emitting device having low power consumption and high stability, in addition to improve extraction efficiency of light generated in a light emitting element. At least an interlayer insulating film (including a planarizing film), an anode, and a bank covering an edge portion of the anode contain chemically and physically stable silicon oxide, or are made of a material containing silicon oxide as its main component in order to accomplish a light emitting device having high stability. Generation of heat in a light emitting panel can be suppressed in addition to increase in efficiency (luminance/current) of a light emitting panel according to the structure of the present invention. Consequently, synergistic effect on reliability of a light emitting device is obtained.

摘要翻译： 本发明的目的是提供一种具有低功耗和高稳定性的发光器件，同时提高了在发光元件中产生的光的提取效率。 至少层间绝缘膜（包括平坦化膜），阳极和覆盖阳极的边缘部分的堤包含化学和物理稳定的氧化硅，或由含有氧化硅作为其主要成分的材料制成，以便 实现了具有高稳定性的发光器件。 除了根据本发明的结构提高发光面板的效率（亮度/电流）之外，还可以抑制发光面板中的发热。 因此，获得了对发光器件的可靠性的协同效应。

公开(公告)号：US08218099B2

公开(公告)日：2012-07-10

申请号：US12871162

申请日：2010-08-30

申请人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Yoshiaki Oikawa

发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Yoshiaki Oikawa

IPC分类号： G02F1/136

CPC分类号： H01L27/1225

摘要： An object is to provide an active matrix liquid crystal display device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors are provided corresponding to characteristics of the plural kinds of circuits. An inverted-coplanar thin film transistor including an oxide semiconductor layer which is over and overlaps with a source electrode layer and a drain electrode layer is used for a pixel thin film transistor. A channel-protective thin film transistor is used for a driver-circuit thin film transistor is used. In addition, main parts of the pixel thin film transistor are formed using a light-transmitting material, so that the aperture ratio is increased.

摘要翻译： 本发明提供一种有源矩阵液晶显示装置，其中在一个基板上形成多种电路，并且根据多种电路的特性设置多种薄膜晶体管。 包括与源电极层和漏电极层重叠的氧化物半导体层的倒共面薄膜晶体管用于像素薄膜晶体管。 使用通道保护薄膜晶体管用于驱动电路薄膜晶体管。 此外，使用透光材料形成像素薄膜晶体管的主要部分，使得开口率增加。

公开(公告)号：US08193031B2

公开(公告)日：2012-06-05

申请号：US12948222

申请日：2010-11-17

申请人： Miyuki Hosoba ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

发明人： Miyuki Hosoba ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

IPC分类号： H01L21/00

CPC分类号： H01L29/78696 ,  G02F1/133528 ,  G02F1/1339 ,  G02F1/134336 ,  G02F1/136286 ,  G02F1/1368 ,  G02F1/167 ,  G02F2001/133302 ,  G02F2001/133531 ,  G02F2201/121 ,  G02F2201/123 ,  G09G3/3677 ,  G09G2310/0286 ,  G09G2310/08 ,  H01L21/02107 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02672 ,  H01L21/324 ,  H01L21/477 ,  H01L21/67115 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/7869

摘要： An object is to provide a semiconductor device having stable electric characteristics in which an oxide semiconductor is used. An oxide semiconductor layer is subjected to heat treatment for dehydration or dehydrogenation treatment in a nitrogen gas or an inert gas atmosphere such as a rare gas (e.g., argon or helium) or under reduced pressure and to a cooling step for treatment for supplying oxygen in an atmosphere of oxygen, an atmosphere of oxygen and nitrogen, or the air (having a dew point of preferably lower than or equal to −40° C., still preferably lower than or equal to −50° C.) atmosphere. The oxide semiconductor layer is thus highly purified, whereby an i-type oxide semiconductor layer is formed. A semiconductor device including a thin film transistor having the oxide semiconductor layer is manufactured.

摘要翻译： 目的在于提供一种使用氧化物半导体的具有稳定电特性的半导体器件。 在氮气或惰性气体气氛（例如氩气或氦气）或减压下对氧化物半导体层进行脱水或脱氢处理的热处理，并进行用于在 氧气和氮气气氛或空气（露点优选低于或等于-40℃，更优选低于或等于-50℃）气氛。 因此，氧化物半导体层被高度纯化，从而形成i型氧化物半导体层。 制造包括具有氧化物半导体层的薄膜晶体管的半导体器件。