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    Novel hard bias design for sensor applications
    81.
    发明申请
    Novel hard bias design for sensor applications 有权
    传感器应用的新型硬偏置设计

    公开(公告)号：US20060132988A1

    公开(公告)日：2006-06-22

    申请号：US11016506

    申请日：2004-12-17

    申请人： Kunliang Zhang ,  Mao-Min Chen ,  Chyu-Jiuh Torng ,  Min Li ,  Chen-Jung Chien

    发明人： Kunliang Zhang ,  Mao-Min Chen ,  Chyu-Jiuh Torng ,  Min Li ,  Chen-Jung Chien

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49032

    摘要： A hard bias structure for biasing a free layer in a MR element within a magnetic read head is comprised of a soft magnetic underlayer such as NiFe and a hard bias layer comprised of Co78.6Cr5.2Pt16.2 or Co65Cr15Pt20 that are rigidly exchange coupled to ensure a well aligned longitudinal biasing direction with minimal dispersions. The hard bias structure is formed on a BCC seed layer such as CrTi to improve lattice matching. The hard bias structure may be laminated in which each of the underlayers and hard bias layers has a thickness that is adjusted to optimize the total HC, Mrt, and S values. The present invention encompasses CIP and CPP spin values, MTJ devices, and multi-layer sensors. A larger process window for fabricating the hard bias structure is realized and lower asymmetry output and NBLW reject rates during a read operation are achieved.

    摘要翻译： 用于偏置磁读头内的MR元件中的自由层的硬偏压结构由诸如NiFe的软磁性底层和由Co ++ 78.6Cr 5.2构成的硬偏置层组成， 或刚性交换耦合以确保良好对准的/SUB>Pt16.2 或Co 15 Cr 15 纵向偏置方向最小分散。 在诸如CrTi的BCC种子层上形成硬偏压结构以改善晶格匹配。 可以层压硬偏压结构，其中每个底层和硬偏压层具有被调节以使总H C，M L t和S的最大化的厚度 价值观。 本发明包括CIP和CPP旋转值，MTJ装置和多层传感器。 实现了用于制造硬偏置结构的更大的工艺窗口，并且实现了读操作期间较低的不对称输出和NBLW废弃率。

    Water-soluble derivatives of lipophilic drugs
    82.
    发明授权
    Water-soluble derivatives of lipophilic drugs 失效
    亲脂性药物的水溶性衍生物

    公开(公告)号：US07029918B2

    公开(公告)日：2006-04-18

    申请号：US10057762

    申请日：2002-01-25

    申请人： Min Li ,  Robert S. Wu ,  Jane S. C. Tsai

    发明人： Min Li ,  Robert S. Wu ,  Jane S. C. Tsai

    IPC分类号： G01N33/548 ,  G01N30/90 ,  C07D243/24

    CPC分类号： G01N33/9473 ,  A61K47/643 ,  A61K47/646 ,  C07D243/24 ,  G01N33/5306 ,  G01N33/948 ,  Y10S436/815 ,  Y10T436/10

    摘要： A water-soluble reference standard is useful for immunoassays of a lipophilic drugs. The reference standard is a compound of formula (I): G-(L)n—Y;  (I) where G is a lipophilic drug; L is a linker which is an alkyl group or heteroalkyl group containing from 1 to 20 carbon atoms; n is 0 or 1; and Y is a water-solubilizing group such as —SO3−, —NR—SO3−, —P(═O)(OH)(O−), or —O—P(═O)(OH)(O−); where R is H or an alkyl group of 1 to 10 carbon atoms.

    摘要翻译： 水溶性参考标准对亲脂性药物的免疫测定是有用的。 参考标准是式（I）的化合物：<？in-line-formula description =“In-line Formulas”end =“lead”？> G-（L） （I）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中G是亲脂性药物; L是含有1至20个碳原子的烷基或杂烷基的连接体; n为0或1; Y是水溶性基团，例如-SO 3 - ， - SO 2 SO 3 - ， - SO 2 - -P（-O）（OH）（O-O）或-OP（-O）（OH）（O-O） 其中R是H或1-10个碳原子的烷基。

    Synthetic free layer for CPP GMR
    85.
    发明授权
    Synthetic free layer for CPP GMR 失效
    CPP GMR的合成自由层

    公开(公告)号：US06953601B2

    公开(公告)日：2005-10-11

    申请号：US10167859

    申请日：2002-06-11

    申请人： Min Li ,  Simon Liao ,  Kochan Ju

    发明人： Min Li ,  Simon Liao ,  Kochan Ju

    IPC分类号： G11B5/39 ,  H01F10/32 ,  H01F41/30 ,  H01L43/10 ,  B05D5/00 ,  G11B5/127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3272 ,  H01F41/302 ,  H01L43/10

    摘要： Reduction of the free layer thickness in GMR devices is desirable in order to meet higher signal requirements, besides improving the GMR ratio itself. However, thinning of the free layer reduces the GMR ratio and leads to poor thermal stability. This problem has been overcome by making AP2 from an inverse GMR material and by changing the free layer from a single uniform layer to a ferromagnetic layer AFM (antiferromagnetically) coupled to a layer of inverse GMR material. Examples of alloys that may be used for the inverse GMR materials include FeCr, NiFeCr, NiCr, CoCr, CoFeCr, and CoFeV. Additionally, the ruthenium layer normally used to effect antiferromagnetic coupling can be replaced by a layer of chromium. A process to manufacture the structure is also described.

    摘要翻译： 为了满足更高的信号要求，除了改善GMR比率本身外，希望降低GMR器件中的自由层厚度。 然而，自由层的减薄降低了GMR比并导致差的热稳定性。 通过从反GMR材料制备AP 2并通过将自由层从单个均匀层改变为耦合到反向GMR材料层的铁磁层AFM（反铁磁性）而已经克服了该问题。 可用于逆GMR材料的合金的实例包括FeCr，NiFeCr，NiCr，CoCr，CoFeCr和CoFeV。 此外，通常用于实现反铁磁耦合的钌层可以被铬层代替。 还描述了制造该结构的方法。

    CPP GMR synthetic spin valve enhancement
    87.
    发明授权
    CPP GMR synthetic spin valve enhancement 有权
    CPP GMR合成自旋阀增强

    公开(公告)号：US06903904B2

    公开(公告)日：2005-06-07

    申请号：US10277453

    申请日：2002-10-22

    申请人： Min Li ,  Kochan Ju ,  Simon Liao

    发明人： Min Li ,  Kochan Ju ,  Simon Liao

    IPC分类号： G11B5/39 ,  H01F10/32 ,  H01F41/30

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/302 ,  Y10T29/49032 ,  Y10T29/49044

    摘要： In current synthetically pinned CPP SV designs, AP2 always makes a negative contribution to the device's GMR since its magnetization direction must be anti-parallel to the pinned layer (AP1). This effect has been reduced by replacing the conventional single layer AP2, that forms part of the synthetic pinned layer, with a multilayer structure into which has been inserted at least one layer of a material such as tantalum that serves to depolarize the spin of electrons that traverse its interfaces. The result is a reduction of said negative contribution by AP2, leading to a significant increase in the GMR ratio.

    摘要翻译： 在目前的合成固定CPP SV设计中，AP2总是对器件的GMR做出负面的贡献，因为它的磁化方向必须反平行于固定层（AP1）。 通过用形成多层结构的多层结构替代形成合成钉扎层的一部分的常规单层AP2，已经减少了这种效果，其中已经插入至少一层诸如钽的材料，其用于使电子的自旋去极化 遍历其界面。 结果是减少AP2的负面贡献，导致GMR比例的显着增加。

    Self-alignment scheme for enhancement of CPP-GMR
    88.
    发明申请
    Self-alignment scheme for enhancement of CPP-GMR 失效
    用于增强CPP-GMR的自对准方案

    公开(公告)号：US20050111143A1

    公开(公告)日：2005-05-26

    申请号：US10718372

    申请日：2003-11-20

    申请人： Jei-Wei Chang ,  Chao-Peng Chen ,  Min Li ,  Kochan Ju

    发明人： Jei-Wei Chang ,  Chao-Peng Chen ,  Min Li ,  Kochan Ju

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： G11B5/1278 ,  Y10T29/49052

    摘要： A method for fabricating a current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the method including an electron-beam lithographic process employing both primary and secondary electron absorption and first and second self-aligned lift-off processes for patterning the capped ferromagnetic free layer and the conducting, non-magnetic spacer layer. The sensor so fabricated has reduced resistance and increased sensitivity.

    摘要翻译： 提供了一种用于制造合成自旋阀类型的电流垂直平面（CPP）巨磁阻（GMR）传感器的方法，该方法包括采用初级和次级电子吸收的电子束光刻工艺，第一和第二 用于对封装的铁磁自由层和导电的非磁性间隔层进行图案化的自对准剥离工艺。 所制造的传感器具有降低的电阻和增加的灵敏度。

    CPP read head for high density and shield noise suppression
    89.
    发明申请
    CPP read head for high density and shield noise suppression 失效
    CPP读头用于高密度和屏蔽噪声抑制

    公开(公告)号：US20050047025A1

    公开(公告)日：2005-03-03

    申请号：US10650602

    申请日：2003-08-28

    申请人： Charles Lin ,  Min Li ,  Simon Liao

    发明人： Charles Lin ,  Min Li ,  Simon Liao

    IPC分类号： G11B5/127 ,  G11B5/33 ,  G11B5/39

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3912 ,  G11B2005/3996

    摘要： It is known that the magnetic shields, between which CPP GMR stacks are sandwiched, can be a source of AMR (anisotropic magneto-resistance) noise. This has been significantly reduced by coating both the magnetic shields with highly conductive layers. If the guidelines disclosed in the invention are followed, the read head can exhibit AMR noise reduced by about 14 to 20. Additionally, the total thickness of the read gap can be maintained to be as low as 300 to 400 Angstroms.

    摘要翻译： 众所周知，其间夹有CPP GMR堆叠的磁屏蔽可以是AMR（各向异性磁阻）噪声的源。 通过用高导电层涂覆两个磁屏蔽，这已经大大降低了。 如果按照本发明公开的指导原则，读头可以显示降低约14至20的AMR噪声。此外，读取间隙的总厚度可以保持在低至300至400埃。