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383 条记录 (耗时 0.052 秒)

    Thermoelectric element
    82.
    发明授权
    Thermoelectric element 失效
    热电元件

    公开(公告)号：US4477686A

    公开(公告)日：1984-10-16

    申请号：US427669

    申请日：1982-09-29

    申请人： Takashi Nakajima ,  Makoto Suzuki

    发明人： Takashi Nakajima ,  Makoto Suzuki

    IPC分类号： H01L35/08 ,  H01L35/10 ,  H01L35/22 ,  H01L35/32 ,  H01L35/28

    CPC分类号： H01L35/10 ,  H01L35/08 ,  H01L35/22 ,  H01L35/32

    摘要： A thermoelectric element wherein connecting members for effecting electrical connection and mechanical engagement are attached securely to the cold-end portion of a thermoelectric elemental body consisting of a p-type semiconductor and an n-type semiconductor joined with each other to form a pn junction therebetween. A support member surrounds the end portion.

    摘要翻译： 一种热电元件，其中用于实现电连接和机械接合的连接构件牢固地附接到由彼此连接的p型半导体和n型半导体组成的热电元件的冷端部分，以在它们之间形成pn结 。 支撑构件围绕端部。

    Switching system
    86.
    发明授权
    Switching system 有权
    开关系统

    公开(公告)号：US08565078B2

    公开(公告)日：2013-10-22

    申请号：US11674872

    申请日：2007-02-14

    申请人： Makoto Suzuki

    发明人： Makoto Suzuki

    IPC分类号： H04L47/10 ,  G01R31/08

    CPC分类号： H04L47/10 ,  H04L12/5601 ,  H04L49/253 ,  H04L2012/563 ,  H04L2012/564

    摘要： An ATM switching system 1 is provided with an ATM switch 11, a reserved connection memory 12 for storing reserved connection information, a call history memory 13 for maintaining call histories of requests for connection from subscriber's terminal units 2−1 to 2−n, and a call-signal processing section 15. The call-signal processing section 15 generates a request for connection with respect to a trunk ATM switching network 3 by the use of the call histories in the call history memory 13 in the case where no call was issued from the subscriber's terminal units, and stores response results thereof in the reserved connection memory 16. Thereafter, when there was a call from the subscriber's terminal units 2−1 to 2−n and contents of the request for connection thereof are the same as the reserved connection information, which has been stored in the reserved connection memory 16, processing for connection is executed by the use of the reserved connection information. As a result, an ATM switching system by which response becomes possible in even the case where a large amount of calls are issued at the same time, besides reduction in cost can also be attained is provided.

    摘要翻译： ATM交换系统1具有ATM交换机11，用于存储预留连接信息的保留连接存储器12，用于维护来自用户终端单元2-1至2-n的连接请求的呼叫历史的呼叫历史存储器13，以及 呼叫信号处理部分15.呼叫信号处理部分15在没有发出呼叫的情况下通过使用呼叫历史存储器13中的呼叫历史来产生关于中继ATM交换网络3的连接请求 并将其响应结果存储在保留连接存储器16中。此后，当存在来自用户终端单元2-1至2-n的呼叫，并且其连接请求的内容与 已经存储在保留连接存储器16中的保留连接信息，通过使用保留的连接信息来执行连接处理。 结果，即使在同时发出大量呼叫的情况下也可以实现响应成为可能的ATM交换系统，而且还可以获得成本降低。

    Pattern check device and pattern check method
    87.
    发明授权
    Pattern check device and pattern check method 有权
    图案检查装置和图案检查方法

    公开(公告)号：US08421008B2

    公开(公告)日：2013-04-16

    申请号：US13129201

    申请日：2009-10-15

    申请人： Mari Nozoe ,  Hiroshi Miyai ,  Mitsuru Okamura ,  Makoto Suzuki ,  Yusuke Ominami

    发明人： Mari Nozoe ,  Hiroshi Miyai ,  Mitsuru Okamura ,  Makoto Suzuki ,  Yusuke Ominami

    IPC分类号： H01J37/26 ,  H01J37/304 ,  G01N23/00

    CPC分类号： H01J37/28 ,  H01J37/244 ,  H01J2237/0048 ,  H01J2237/2008 ,  H01J2237/24564 ,  H01J2237/2817 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Provided is a pattern inspection apparatus including: a charge formation means which forms charge on a surface of a substrate (7) by generating an electron beam from a second electron source (20) which is different from an electron source (1) which generates an electron beam before irradiating an electron beam (3), a current measuring means (34) which measures a value of current flowing in the substrate while the charge is formed on the surface of the substrate by the charge formation means; and an adjustment means (37) which adjusts the charge formed by the charge formation means so that the value of the current measured by the current measuring means is a predetermined target value. Provided is also a pattern inspection method which uses the pattern inspection apparatus. Thus, it is possible to easily set an optimal condition of precharge executed before inspection of a pattern formed by a semiconductor apparatus manufacturing process and automatically inspection whether the precharge is good. Then, the inspection result is fed back to the operation afterward. This prevents lowering of the reliability of the inspection result and always enables a stable inspection.

    摘要翻译： 提供了一种图案检查装置，其包括：电荷形成装置，其通过从不同于电子源的电子源（1）产生来自第二电子源（20）的电子束，从而在基板（7）的表面上形成电荷， 电子束（3）之前的电子束;电流测量装置（34），其通过电荷形成装置测量在基板的表面上形成电荷时在基板中流动的电流值; 以及调整装置，其调整由电荷形成装置形成的电荷，使得由电流测量装置测量的电流的值是预定的目标值。 还提供了使用图案检查装置的图案检查方法。 因此，可以容易地设定在由半导体装置制造工艺形成的图案的检查之前执行的预充电的最佳状态，并且自动检查预充电是否良好。 然后，检查结果反馈给操作。 这防止了检查结果的可靠性降低，并且始终能够进行稳定的检查。

    VIDEO GAME APPARATUS, VIDEO GAME CONTROLLING PROGRAM, AND VIDEO GAME CONTROLLING METHOD
    88.
    发明申请
    VIDEO GAME APPARATUS, VIDEO GAME CONTROLLING PROGRAM, AND VIDEO GAME CONTROLLING METHOD 有权
    视频游戏设备，视频游戏控制程序和视频游戏控制方法

    公开(公告)号：US20130084982A1

    公开(公告)日：2013-04-04

    申请号：US13700786

    申请日：2011-05-19

    申请人： Makoto Suzuki

    发明人： Makoto Suzuki

    IPC分类号： G06F3/01

    CPC分类号： A63F13/428 ,  A63F13/213 ,  A63F2300/1093 ,  A63F2300/6045 ,  G06F3/011 ,  G06F3/017 ,  G06K9/00369 ,  G06K9/4642 ,  G06K9/4647

    摘要： A video game apparatus includes a depth sensor configured to capture an area where a player exists and acquire depth information for each pixel of the image; and a gesture recognition unit configured to divide the image into a plurality of sections, to calculate statistics information of the depth information for each of the plurality of sections, and to recognize a gesture of the player based on the statistics information.

    摘要翻译： 视频游戏装置包括：深度传感器，被配置为捕获玩家存在的区域，并获取图像的每个像素的深度信息; 以及手势识别单元，被配置为将所述图像划分为多个部分，以计算所述多个部分中的每一个的深度信息的统计信息，并且基于所述统计信息识别所述玩家的手势。

    Polishing composition for hard disk substrate
    89.
    发明授权
    Polishing composition for hard disk substrate 有权
    硬盘基材抛光组合物

    公开(公告)号：US08404009B2

    公开(公告)日：2013-03-26

    申请号：US12259904

    申请日：2008-10-28

    申请人： Masahiko Suzuki ,  Kenichi Suenaga ,  Makoto Suzuki

    发明人： Masahiko Suzuki ,  Kenichi Suenaga ,  Makoto Suzuki

    IPC分类号： B24D3/02 ,  C09C1/68 ,  C09K3/14

    CPC分类号： C09K3/1463 ,  C09G1/02 ,  C09K3/1409

    摘要： A polishing composition for a hard disk substrate includes alumina particles, silica particles, and water. The volume median diameter of secondary particles of the alumina particles measured by a laser beam diffraction method is 0.1 to 0.8 μm. The volume median diameter of primary particles of the silica particles measured by transmission electron microscope observation is 40 to 150 nm. The standard deviation in number-basis particle size of the primary particles of the silica particles measured by the transmission electron microscope observation is 11 to 35 nm. The polishing composition for a hard disk substrate can preferably reduce the embedding of alumina abrasive grains into the substrate without impairing the productivity.

    摘要翻译： 用于硬盘基材的抛光组合物包括氧化铝颗粒，二氧化硅颗粒和水。 通过激光束衍射法测定的氧化铝粒子的二次粒子的体积中值粒径为0.1〜0.8μm。 通过透射电子显微镜观察测定的二氧化硅粒子的一次粒子的体积中值粒径为40〜150nm。 通过透射电子显微镜观察测定的二氧化硅粒子的一次粒子的基数粒径的标准偏差为11〜35nm。 用于硬盘基材的抛光组合物可以优选地减少氧化铝磨粒在基材中的嵌入，而不损害生产率。

    VOLTAGE CHARACTERISTIC REGULATING METHOD OF LATCH CIRCUIT, VOLTAGE CHARACTERISTIC REGULATING METHOD OF SEMICONDUCTOR DEVICE, AND VOLTAGE CHARACTERISTIC REGULATOR OF LATCH CIRCUIT
    90.
    发明申请
    VOLTAGE CHARACTERISTIC REGULATING METHOD OF LATCH CIRCUIT, VOLTAGE CHARACTERISTIC REGULATING METHOD OF SEMICONDUCTOR DEVICE, AND VOLTAGE CHARACTERISTIC REGULATOR OF LATCH CIRCUIT 失效
    电压电路的特性调节方法，半导体器件的电压特性调节方法和电压电路特性调节器

    公开(公告)号：US20120182064A1

    公开(公告)日：2012-07-19

    申请号：US13377009

    申请日：2010-06-11

    申请人： Toshiro Hiramoto ,  Takayasu Sakurai ,  Makoto Suzuki

    发明人： Toshiro Hiramoto ,  Takayasu Sakurai ,  Makoto Suzuki

    IPC分类号： G05F1/10

    CPC分类号： G11C11/413

    摘要： The voltage Vdd is set to be lower than in the normal operation (step S100), then voltage is applied to each of the power-supply voltage applied node Vdd, the ground voltage applied node Vss, the semiconductor substrate and the well so that relative high voltage between the gate of turn-on transistor and the semiconductor substrate or the gate of turn-on transistor and well (steps S110 and S120). This process accomplishes rising of the threshold voltage of the transistor that is turned on, the reduction of the variation in the threshold voltage between a plurality of the transistors of the memory cell including latch circuit, and the improvement of the voltage characteristic of the memory cell.

    摘要翻译： 电压Vdd被设定为低于正常工作（步骤S100），然后对电源电压施加节点Vdd，接地电压施加节点Vss，半导体衬底和阱施加电压，使得相对 导通晶体管的栅极和半导体衬底或导通晶体管的栅极之间的高电压（步骤S110和S120）。 该处理完成导通的晶体管的阈值电压的上升，包括锁存电路的存储单元的多个晶体管之间的阈值电压的变化的减小以及存储单元的电压特性的改善 。