公开(公告)号：US20100311221A1

公开(公告)日：2010-12-09

申请号：US12805582

申请日：2010-08-06

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L27/1266 ,  H01L29/78603

摘要： Hydrogen ions are implanted to a surface (main surface) of the single crystal Si substrate 10 at a dosage of 1.5×1017 atoms/cm2 or higher to form the hydrogen ion implanted layer (ion-implanted damage layer) 11. As a result of the hydrogen ion implantation, the hydrogen ion implanted boundary 12 is formed. The single crystal Si substrate 10 and the low melting glass substrate 20 are bonded together. The bonded substrate is heated at relatively low temperature, 120° C. or higher and 250° C. or lower (below a melting point of the support substrate). Further, an external shock is applied to delaminate the Si crystal film along the hydrogen ion implanted boundary 12 of the single crystal Si substrate 10 out of the heat-treated bonded substrate. Then, the surface of the resultant silicon thin film 13 is polished to remove a damaged portion, so that a semiconductor substrate can be fabricated. There can be provided a semiconductor substrate in which a high-quality silicon thin film is transferred onto a substrate made of a low melting point material.

摘要翻译： 将氢离子以1.5×10 17原子/ cm 2或更高的剂量注入单晶Si衬底10的表面（主表面），以形成氢离子注入层（离子注入损伤层）11。 氢离子注入，形成氢离子注入边界12。 单晶Si衬底10和低熔点玻璃衬底20结合在一起。 键合衬底在相对较低的温度，120℃或更高和250℃或更低（低于支撑衬底的熔点）下加热。 此外，施加外部冲击以沿着经热处理的键合衬底的单晶Si衬底10的氢离子注入边界12将Si晶体膜分层。 然后，对所得的硅薄膜13的表面进行抛光以去除损坏部分，从而可以制造半导体衬底。 可以提供一种半导体衬底，其中将高质量的硅薄膜转移到由低熔点材料制成的衬底上。

公开(公告)号：US07826562B2

公开(公告)日：2010-11-02

申请号：US10548065

申请日：2004-05-27

申请人： Yutaka Nio ,  Kouichiro Nagata ,  Koichi Tanaka

发明人： Yutaka Nio ,  Kouichiro Nagata ,  Koichi Tanaka

IPC分类号： H04L27/00

CPC分类号： H04N17/004 ,  G09G5/006 ,  G09G2370/045 ,  G09G2370/12 ,  H04N5/445 ,  H04N5/60 ,  H04N11/042 ,  H04N21/43635 ,  H04N21/4396 ,  H04N21/44231 ,  H04N21/4882

摘要： An audio controlling device generates an audio mute signal based on the level of a power-supply voltage supplied from the source equipment, whether a clock signal has been input or not, whether a digital signal has been input or not, whether a multiplier circuit is being locked or not, an error rate, whether an audio clock detection circuit is being locked or not, the presence or absence of a change in a control signal, and whether a synchronization detection circuit is stable or not. The audio controlling device applies the audio mute signal to an audio mute circuit, while applying an OSD control signal to an OSD processing circuit. The audio mute circuit is placed in a mute state or unmute state based on the audio mute signal. The OSD processing circuit provides the on-screen display of a message based on the OSD control signal.

摘要翻译： 音频控制装置基于从源设备提供的电源电压的电平，是否输入了时钟信号，是否输入了数字信号，生成音频静音信号，乘法电路是否为 是否被锁定，音频时钟检测电路是否被锁定的错误率，控制信号中是否存在变化，以及同步检测电路是否稳定。 音频控制装置将音频静音信号施加到音频静音电路，同时将OSD控制信号应用于OSD处理电路。 音频静音电路基于音频静音信号置于静音状态或取消静音状态。 OSD处理电路基于OSD控制信号提供消息的屏幕显示。

公开(公告)号：US20100227721A1

公开(公告)日：2010-09-09

申请号：US12677980

申请日：2008-09-30

申请人： Koji Kato ,  Masashi Hattori ,  Yasuhiro Takeuchi ,  Hideharu Ushida ,  Masaki Saito ,  Katsumori Fujii ,  Shinichiro Yajima ,  Koichi Tanaka ,  Hirofumi Nozawa ,  Keisuke Ninomiya ,  Satoru Ando ,  Yuji Hattori ,  Tomohito Suzuki ,  Miyoshi Kakiuchi ,  Toshiaki Oomori ,  Kazuhiro Hanaki ,  Keiichiro Irie

发明人： Koji Kato ,  Masashi Hattori ,  Yasuhiro Takeuchi ,  Hideharu Ushida ,  Masaki Saito ,  Katsumori Fujii ,  Shinichiro Yajima ,  Koichi Tanaka ,  Hirofumi Nozawa ,  Keisuke Ninomiya ,  Satoru Ando ,  Yuji Hattori ,  Tomohito Suzuki ,  Miyoshi Kakiuchi ,  Toshiaki Oomori ,  Kazuhiro Hanaki ,  Keiichiro Irie

IPC分类号： F16G5/16

CPC分类号： F16G5/16

摘要： An endless metal belt including a ring formed by laminating endless metal plates; and multiple elements continuously attached to the ring. Each of the elements has a body, a head connected to the body by a pillar, and slots formed between the body and the head on left and right sides of the pillar, respectively, for receiving the ring. The elements satisfy the equations (h/t) 40, where h is a width of the slots, t is a plate thickness of the elements, and S is an area of the head.

摘要翻译： 一种环形金属带，包括通过层压无端金属板形成的环; 并且多个元件连续地连接到环上。 每个元件具有主体，通过柱连接到主体的头部，以及分别形成在柱体的左侧和右侧的主体和头部之间的槽，用于接收环。 这些元素满足等式（h / t）<1和（S / h）> 40，其中h是槽的宽度，t是元件的板厚度，S是头部的面积。

公开(公告)号：US20100227452A1

公开(公告)日：2010-09-09

申请号：US12161819

申请日：2007-02-08

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/2007 ,  H01L27/1203 ,  H01L27/1214 ,  H01L29/78603

摘要： A heating plate having a smooth surface is placed on a hot plate which constitutes a heating section, and the smooth surface of the heating plate is closely adhered on the rear surface of a single-crystal Si substrate bonded to a transparent insulating substrate. The temperature of the heating plate is kept at 200° C. or higher but not higher than 350° C. When the rear surface of the single-crystal Si substrate bonded to the insulating substrate is closely adhered on the heating plate, the single-crystal Si substrate is heated by thermal conduction, and a temperature difference is generated between the single-crystal Si substrate and the transparent insulating substrate. A large stress is generated between the both substrates due to rapid expansion of the single-crystal Si substrate, thus separation takes place at a hydrogen ion-implanted interface.

摘要翻译： 将具有光滑表面的加热板放置在构成加热部分的加热板上，并且加热板的光滑表面紧密地粘附在粘结到透明绝缘基板的单晶Si基板的背面上。 加热板的温度保持在200℃以上但不高于350℃。当结合到绝缘基板的单晶Si衬底的后表面紧密地粘附在加热板上时， 晶体硅衬底通过热传导加热，并且在单晶硅衬底和透明绝缘衬底之间产生温度差。 由于单晶Si衬底的快速膨胀，在两个衬底之间产生大的应力，因此在氢离子注入界面处发生分离。

公开(公告)号：US20100177208A1

公开(公告)日：2010-07-15

申请号：US12687709

申请日：2010-01-14

申请人： Masaya Tamaru ,  Makoto Oishi ,  Koichi Tanaka

发明人： Masaya Tamaru ,  Makoto Oishi ,  Koichi Tanaka

IPC分类号： H04N5/228

CPC分类号： H04N5/23212 ,  G06T7/33 ,  G06T2207/10016 ,  G06T2207/20216 ,  H04N5/145 ,  H04N5/23232 ,  H04N5/2353 ,  H04N5/2354 ,  H04N5/2621

摘要： An imaging apparatus is equipped with: imaging means, for obtaining images of a subject; imaging control means, for controlling the imaging means to sequentially obtain a plurality of images; reference image selecting means, for selecting a single reference image from among the plurality of images; moving object region specifying means, for specifying moving object regions within corresponding images, which are the plurality of images other than the selected reference image; positioning means, for positioning the plurality of corresponding images with respect to the reference image in the case that the plurality of images have been imaged by flow shooting, the positioning being performed such that the amount of positioning is greater at the specified moving object regions than at non moving object regions; and combining means, for combining the plurality of corresponding images, which have been positioned by the positioning means, with the reference image.

摘要翻译： 成像装置配备有：用于获得被摄体的图像的成像装置; 成像控制装置，用于控制成像装置顺序地获得多个图像; 参考图像选择装置，用于从所述多个图像中选择单个参考图像; 移动对象区域指定装置，用于指定作为选择的参考图像以外的多个图像的对应图像内的移动对象区域; 定位装置，用于在通过流动拍摄成像多个图像的情况下，相对于参考图像定位多个对应图像，定位被执行为使得在指定的移动物体区域的定位量大于 在非移动物体区域; 以及用于将由定位装置定位的多个对应图像与参考图像组合的组合装置。

公开(公告)号：US07735602B2

公开(公告)日：2010-06-15

申请号：US11802868

申请日：2007-05-25

申请人： Kazuhiro Yasuda ,  Tadashi Oshima ,  Koichi Tanaka ,  Kazuo Yamamoto

发明人： Kazuhiro Yasuda ,  Tadashi Oshima ,  Koichi Tanaka ,  Kazuo Yamamoto

IPC分类号： F01N13/08

CPC分类号： F01N13/185 ,  F01N1/00 ,  F01N13/1805 ,  F01N2450/20 ,  F01N2470/10 ,  F01N2470/24

摘要： A muffler structure capable of suppressing generation of abnormal noise in the muffler even when the outer and the inner tubes expand thermally. Provided is a double-pipe muffler structure including an inner tube and an outer tube. In the muffler structure, an annular front step portion and an annular rear step portion are formed in the inner tube, while the step portions is brought into contact, from inside, with the outer tube and thus are supported by the outer tube. The outer tube supports the front and the rear step portions by being brought into close contact with the step portions partially and elastically.

摘要翻译： 即使外管和内管热膨胀，也能够抑制消音器产生异常噪音的消音器结构。 提供一种包括内管和外管的双管消声器结构。 在消声器结构中，在内管中形成环状的前台阶部和环状的后台阶部，同时台阶部从内侧与外管接触，由外管支承。 外管通过部分地弹性地与台阶部紧密接触来支撑前台阶部和后台阶部。

公开(公告)号：US07708660B2

公开(公告)日：2010-05-04

申请号：US11131257

申请日：2005-05-18

申请人： Shinya Kuwabara ,  Koichi Tanaka

发明人： Shinya Kuwabara ,  Koichi Tanaka

IPC分类号： F16H59/00 ,  F16H61/00

CPC分类号： F16H55/56

摘要： A belt type continuously variable transmission includes an adjustable sheave which is provided with a fixed rotor fixed to a revolving shaft and with a movable rotor attached to the revolving shaft by spline fit in a manner inhibiting their relative rotation and allowing axial displacement so that a groove width is adjustable between the movable rotor and the fixed rotor, wherein the revolving shaft is provided with a load supporting portion on which tip surfaces of spline teeth of the movable rotor are in slide contact, whereby a radial load from the movable rotor is supported by the load supporting portion.

摘要翻译： 带式无级变速器包括可调节滑轮，其具有固定在旋转轴上的固定转子，并且具有通过花键配合而附接到旋转轴的可动转子，该方式抑制其相对旋转并允许轴向位移，使得槽 所述可动转子与所述固定转子之间的宽度是可调节的，其中，所述回转轴设置有负载支承部，所述可动转子的花键齿的顶端表面滑动接触，由此来自所述可动转子的径向载荷由 负载支承部。

公开(公告)号：US07696771B2

公开(公告)日：2010-04-13

申请号：US12042343

申请日：2008-03-05

申请人： Koichi Tanaka ,  Masakatsu Suda

发明人： Koichi Tanaka ,  Masakatsu Suda

IPC分类号： G01R31/26

CPC分类号： G01R31/31901 ,  G01R31/31721

摘要： Provided is a test apparatus that tests fluctuation of a power supply voltage supplied to a device under test, including an oscillator that outputs a clock signal having a frequency that corresponds to the power supply voltage supplied to the power supply input terminal of the device under test, and a measuring section that measures the frequency of the clock signal. For example, the oscillator outputs as the clock signal an output signal of any one negative logic element from among an odd number of negative logic elements connected in a loop, and at least one of the negative logic elements operates using, as a voltage source, a voltage corresponding to the power supply voltage supplied to the power supply input terminal of the device under test.

摘要翻译： 提供一种测试装置，其测试提供给被测设备的电源电压的波动，该测试装置包括输出具有与提供给被测设备的电源输入端的电源电压相对应的频率的时钟信号的振荡器 以及测量时钟信号频率的测量部分。 例如，振荡器作为时钟信号输出来自连接在一个回路中的奇数个负逻辑单元中的任何一个负逻辑单元的输出信号，并且至少一个负逻辑单元使用作为电压源的操作， 对应于提供给被测设备的电源输入端的电源电压的电压。

公开(公告)号：US07678660B2

公开(公告)日：2010-03-16

申请号：US11252597

申请日：2005-10-19

申请人： Koichi Tanaka

发明人： Koichi Tanaka

IPC分类号： H01L21/20

CPC分类号： H05K1/162 ,  H01L21/76807 ,  H01L21/76838 ,  H01L23/50 ,  H01L23/5223 ,  H01L23/642 ,  H01L28/40 ,  H01L2924/0002 ,  H05K3/0023 ,  H05K3/005 ,  H05K3/107 ,  H05K3/4602 ,  H05K3/465 ,  H05K3/4652 ,  H05K2201/0187 ,  H05K2201/09509 ,  H05K2203/0108 ,  H05K2203/0551 ,  H05K2203/1189 ,  H01L2924/00

摘要： A method of manufacturing a capacitor device of the present invention, includes the steps of, forming an insulating layer on a substrate, forming a recess portion in the insulating layer by an imprinting process, forming a lower electrode by filling a metal layer in the recess portion in the insulating layer, forming a photosensitive dielectric layer on the lower electrode, forming an upper electrode on the dielectric layer, and forming a dielectric layer pattern under the upper electrode by exposing/developing the dielectric layer while using the upper electrode as a mask.

公开(公告)号：US20090246212A1

公开(公告)日：2009-10-01

申请号：US12088812

申请日：2006-09-29

申请人： Takaaki Koshiba ,  Atsushi Ito ,  Shimon Sakaguchi ,  Koichi Tanaka ,  Yanling Wu ,  Mayuko Narumoto

发明人： Takaaki Koshiba ,  Atsushi Ito ,  Shimon Sakaguchi ,  Koichi Tanaka ,  Yanling Wu ,  Mayuko Narumoto

IPC分类号： A61K39/00 ,  C12Q1/02 ,  C12N5/00 ,  C12N5/06 ,  C12Q1/68

CPC分类号： G01N33/505 ,  C12N5/0636

摘要： The present invention provides a screening method for a compound capable of inducing regulatory T cells, comprising the following steps:(1) a step for culturing CD4+ T cells having a naïve phenotype in the presence of a test compound, and isolating T cells from the culture product; (2) a step for evaluating the immunosuppressive function of the T cells isolated in the step (1); (3) a step for obtaining the foregoing test compound as a compound capable of inducing regulatory T cells if the results of the evaluation in the step (2) show that the T cells isolated in the step (1) have immunosuppressive function. The present invention also provides a method of producing regulatory T cells, comprising culturing CD4+ T cells having a naïve phenotype in the presence of a rapamycin compound to obtain regulatory T cells. The regulatory T cell produced by the method can be used as an immunomodulator for the prophylaxis or treatment of the rejection in organ transplantation, an allergic disease, an autoimmune disease, a graft-versus-host disease (GVHD), infertility and the like.

摘要翻译： 本发明提供了能够诱导调节性T细胞的化合物的筛选方法，包括以下步骤：（1）在试验化合物存在下培养具有初始表型的CD4 + T细胞的步骤， 文化产品; （2）评价步骤（1）中分离的T细胞的免疫抑制功能的步骤。 （3）如果步骤（2）中的评价结果​​表明在步骤（1）中分离的T细胞具有免疫抑制功能，则获得作为能诱导调节性T细胞的化合物的上述试验化合物的步骤。 本发明还提供了一种产生调节性T细胞的方法，包括在雷帕霉素化合物存在下培养具有初始表型的CD4 + T细胞以获得调节性T细胞。 通过该方法产生的调节性T细胞可用作免疫调节剂，用于预防或治疗器官移植排斥反应，过敏性疾病，自身免疫性疾病，移植物抗宿主病（GVHD），不育症等。